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IXGX40N120BD1

IXYS IXGX40N120BD1

Part Number:
IXGX40N120BD1
Manufacturer:
IXYS
Ventron No:
3072240-IXGX40N120BD1
Description:
IGBT 1200V PLUS247
ECAD Model:
Datasheet:
IXGX40N120BD1

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Specifications
IXYS IXGX40N120BD1 technical specifications, attributes, parameters and parts with similar specifications to IXYS IXGX40N120BD1.
  • Factory Lead Time
    8 Weeks
  • Mount
    Through Hole
  • Mounting Type
    Through Hole
  • Package / Case
    ISOPLUS247™
  • Transistor Element Material
    SILICON
  • Packaging
    Tube
  • JESD-609 Code
    e1
  • Pbfree Code
    yes
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    3
  • Terminal Finish
    TIN SILVER COPPER
  • Terminal Position
    SINGLE
  • Peak Reflow Temperature (Cel)
    NOT SPECIFIED
  • Time@Peak Reflow Temperature-Max (s)
    NOT SPECIFIED
  • Base Part Number
    IXG*40N120
  • Pin Count
    3
  • JESD-30 Code
    R-PSIP-T3
  • Qualification Status
    Not Qualified
  • Operating Temperature (Max)
    150°C
  • Number of Elements
    1
  • Configuration
    SINGLE WITH BUILT-IN DIODE
  • Case Connection
    COLLECTOR
  • Input Type
    Standard
  • Transistor Application
    POWER CONTROL
  • Polarity/Channel Type
    N-CHANNEL
  • Collector Emitter Breakdown Voltage
    1.2kV
  • Voltage - Collector Emitter Breakdown (Max)
    1200V
  • Turn On Time
    105 ns
  • Collector Current-Max (IC)
    75A
  • Turn Off Time-Nom (toff)
    1030 ns
  • RoHS Status
    ROHS3 Compliant
Description
IXGX40N120BD1 Overview
This product is manufactured by IXYS and belongs to the category of Transistors - IGBTs - Single. The images we provide are for reference only, for detailed product information please see specification sheet IXGX40N120BD1 or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of IXGX40N120BD1. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
IXGX40N120BD1 More Descriptions
IGBT 1200V FRD PLUS247
Product Comparison
The three parts on the right have similar specifications to IXGX40N120BD1.
  • Image
    Part Number
    Manufacturer
    Factory Lead Time
    Mount
    Mounting Type
    Package / Case
    Transistor Element Material
    Packaging
    JESD-609 Code
    Pbfree Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    Terminal Finish
    Terminal Position
    Peak Reflow Temperature (Cel)
    Time@Peak Reflow Temperature-Max (s)
    Base Part Number
    Pin Count
    JESD-30 Code
    Qualification Status
    Operating Temperature (Max)
    Number of Elements
    Configuration
    Case Connection
    Input Type
    Transistor Application
    Polarity/Channel Type
    Collector Emitter Breakdown Voltage
    Voltage - Collector Emitter Breakdown (Max)
    Turn On Time
    Collector Current-Max (IC)
    Turn Off Time-Nom (toff)
    RoHS Status
    Number of Pins
    Operating Temperature
    Series
    Published
    Subcategory
    Max Power Dissipation
    Reach Compliance Code
    Element Configuration
    Power Dissipation
    Collector Emitter Voltage (VCEO)
    Max Collector Current
    Collector Emitter Saturation Voltage
    Test Condition
    Vce(on) (Max) @ Vge, Ic
    IGBT Type
    Gate Charge
    Current - Collector Pulsed (Icm)
    Td (on/off) @ 25°C
    Switching Energy
    Gate-Emitter Voltage-Max
    Gate-Emitter Thr Voltage-Max
    Lead Free
    ECCN Code
    Additional Feature
    Reverse Recovery Time
    Fall Time-Max (tf)
    Input Capacitance
    View Compare
  • IXGX40N120BD1
    IXGX40N120BD1
    IXYS
    8 Weeks
    Through Hole
    Through Hole
    ISOPLUS247™
    SILICON
    Tube
    e1
    yes
    Active
    1 (Unlimited)
    3
    TIN SILVER COPPER
    SINGLE
    NOT SPECIFIED
    NOT SPECIFIED
    IXG*40N120
    3
    R-PSIP-T3
    Not Qualified
    150°C
    1
    SINGLE WITH BUILT-IN DIODE
    COLLECTOR
    Standard
    POWER CONTROL
    N-CHANNEL
    1.2kV
    1200V
    105 ns
    75A
    1030 ns
    ROHS3 Compliant
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • IXGX120N60B3
    IXGX120N60B3
    IXYS
    30 Weeks
    Through Hole
    Through Hole
    TO-247-3
    SILICON
    Tube
    e1
    yes
    Active
    1 (Unlimited)
    3
    TIN SILVER COPPER
    -
    NOT SPECIFIED
    NOT SPECIFIED
    IXG*120N60
    3
    -
    Not Qualified
    -
    1
    -
    COLLECTOR
    Standard
    POWER CONTROL
    N-CHANNEL
    600V
    -
    123 ns
    -
    520 ns
    ROHS3 Compliant
    3
    -55°C~150°C TJ
    GenX3™
    2009
    Insulated Gate BIP Transistors
    780W
    unknown
    Single
    780W
    1.8V
    280A
    1.5V
    480V, 100A, 2 Ω, 15V
    1.8V @ 15V, 100A
    PT
    465nC
    600A
    40ns/227ns
    2.9mJ (on), 3.5mJ (off)
    20V
    5V
    Lead Free
    -
    -
    -
    -
    -
    IXGX40N120BD1 vs IXGX120N60B3
  • IXGX72N60B3H1
    IXGX72N60B3H1
    IXYS
    8 Weeks
    Through Hole
    Through Hole
    TO-247-3
    SILICON
    Tube
    e1
    yes
    Active
    1 (Unlimited)
    3
    TIN SILVER COPPER
    SINGLE
    NOT SPECIFIED
    NOT SPECIFIED
    IXG*72N60
    3
    R-PSIP-T3
    Not Qualified
    -
    1
    SINGLE WITH BUILT-IN DIODE
    COLLECTOR
    Standard
    POWER CONTROL
    N-CHANNEL
    600V
    -
    63 ns
    -
    370 ns
    ROHS3 Compliant
    -
    -55°C~150°C TJ
    GenX3™
    2009
    Insulated Gate BIP Transistors
    540W
    unknown
    -
    540W
    1.8V
    75A
    1.5V
    480V, 50A, 3 Ω, 15V
    1.8V @ 15V, 60A
    PT
    225nC
    450A
    31ns/152ns
    1.4mJ (on), 1mJ (off)
    20V
    5V
    Lead Free
    EAR99
    LOW CONDUCTION LOSS
    140 ns
    150ns
    -
    IXGX40N120BD1 vs IXGX72N60B3H1
  • IXGX72N60A3H1
    IXGX72N60A3H1
    IXYS
    8 Weeks
    Through Hole
    Through Hole
    TO-247-3
    SILICON
    Tube
    e1
    yes
    Active
    1 (Unlimited)
    3
    TIN SILVER COPPER
    SINGLE
    NOT SPECIFIED
    NOT SPECIFIED
    IXG*72N60
    3
    -
    Not Qualified
    -
    1
    SINGLE WITH BUILT-IN DIODE
    COLLECTOR
    Standard
    POWER CONTROL
    N-CHANNEL
    600V
    -
    63 ns
    -
    885 ns
    ROHS3 Compliant
    3
    -55°C~150°C TJ
    GenX3™
    2012
    Insulated Gate BIP Transistors
    540W
    unknown
    -
    540W
    600V
    75A
    1.35V
    480V, 50A, 3 Ω, 15V
    1.35V @ 15V, 60A
    PT
    230nC
    400A
    31ns/320ns
    1.4mJ (on), 3.5mJ (off)
    20V
    5V
    -
    -
    LOW CONDUCTION LOSS
    140 ns
    -
    6.6nF
    IXGX40N120BD1 vs IXGX72N60A3H1
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS
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