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IXGX35N120B

IXYS IXGX35N120B

Part Number:
IXGX35N120B
Manufacturer:
IXYS
Ventron No:
2854991-IXGX35N120B
Description:
IGBT 1200V 70A 350W PLUS247
ECAD Model:
Datasheet:
IXGX35N120B

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Specifications
IXYS IXGX35N120B technical specifications, attributes, parameters and parts with similar specifications to IXYS IXGX35N120B.
  • Factory Lead Time
    25 Weeks
  • Mount
    Through Hole
  • Mounting Type
    Through Hole
  • Package / Case
    TO-247-3
  • Number of Pins
    3
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Tube
  • Series
    HiPerFAST™
  • Published
    2002
  • JESD-609 Code
    e1
  • Pbfree Code
    yes
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    3
  • Terminal Finish
    TIN SILVER COPPER
  • Subcategory
    Insulated Gate BIP Transistors
  • Max Power Dissipation
    350W
  • Peak Reflow Temperature (Cel)
    NOT SPECIFIED
  • Reach Compliance Code
    unknown
  • Time@Peak Reflow Temperature-Max (s)
    NOT SPECIFIED
  • Base Part Number
    IXG*35N120
  • Pin Count
    3
  • Qualification Status
    Not Qualified
  • Number of Elements
    1
  • Element Configuration
    Single
  • Case Connection
    COLLECTOR
  • Input Type
    Standard
  • Power - Max
    350W
  • Transistor Application
    MOTOR CONTROL
  • Polarity/Channel Type
    N-CHANNEL
  • Collector Emitter Voltage (VCEO)
    1.2kV
  • Max Collector Current
    70A
  • Collector Emitter Breakdown Voltage
    1.2kV
  • Voltage - Collector Emitter Breakdown (Max)
    1200V
  • Collector Emitter Saturation Voltage
    3.3V
  • Turn On Time
    86 ns
  • Test Condition
    960V, 35A, 5 Ω, 15V
  • Vce(on) (Max) @ Vge, Ic
    3.3V @ 15V, 35A
  • Turn Off Time-Nom (toff)
    660 ns
  • IGBT Type
    PT
  • Gate Charge
    170nC
  • Current - Collector Pulsed (Icm)
    140A
  • Td (on/off) @ 25°C
    50ns/180ns
  • Switching Energy
    3.8mJ (off)
  • Gate-Emitter Voltage-Max
    20V
  • Gate-Emitter Thr Voltage-Max
    5V
  • RoHS Status
    ROHS3 Compliant
Description
IXGX35N120B Overview
This product is manufactured by IXYS and belongs to the category of Transistors - IGBTs - Single. The images we provide are for reference only, for detailed product information please see specification sheet IXGX35N120B or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of IXGX35N120B. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
IXGX35N120B More Descriptions
IGBT 1200V 70A 350W PLUS247
Contact for details
Product Comparison
The three parts on the right have similar specifications to IXGX35N120B.
  • Image
    Part Number
    Manufacturer
    Factory Lead Time
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Transistor Element Material
    Operating Temperature
    Packaging
    Series
    Published
    JESD-609 Code
    Pbfree Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    Terminal Finish
    Subcategory
    Max Power Dissipation
    Peak Reflow Temperature (Cel)
    Reach Compliance Code
    Time@Peak Reflow Temperature-Max (s)
    Base Part Number
    Pin Count
    Qualification Status
    Number of Elements
    Element Configuration
    Case Connection
    Input Type
    Power - Max
    Transistor Application
    Polarity/Channel Type
    Collector Emitter Voltage (VCEO)
    Max Collector Current
    Collector Emitter Breakdown Voltage
    Voltage - Collector Emitter Breakdown (Max)
    Collector Emitter Saturation Voltage
    Turn On Time
    Test Condition
    Vce(on) (Max) @ Vge, Ic
    Turn Off Time-Nom (toff)
    IGBT Type
    Gate Charge
    Current - Collector Pulsed (Icm)
    Td (on/off) @ 25°C
    Switching Energy
    Gate-Emitter Voltage-Max
    Gate-Emitter Thr Voltage-Max
    RoHS Status
    Additional Feature
    Terminal Position
    JESD-30 Code
    Operating Temperature (Max)
    Configuration
    Reverse Recovery Time
    Power Dissipation
    Lead Free
    ECCN Code
    Fall Time-Max (tf)
    View Compare
  • IXGX35N120B
    IXGX35N120B
    IXYS
    25 Weeks
    Through Hole
    Through Hole
    TO-247-3
    3
    SILICON
    -55°C~150°C TJ
    Tube
    HiPerFAST™
    2002
    e1
    yes
    Active
    1 (Unlimited)
    3
    TIN SILVER COPPER
    Insulated Gate BIP Transistors
    350W
    NOT SPECIFIED
    unknown
    NOT SPECIFIED
    IXG*35N120
    3
    Not Qualified
    1
    Single
    COLLECTOR
    Standard
    350W
    MOTOR CONTROL
    N-CHANNEL
    1.2kV
    70A
    1.2kV
    1200V
    3.3V
    86 ns
    960V, 35A, 5 Ω, 15V
    3.3V @ 15V, 35A
    660 ns
    PT
    170nC
    140A
    50ns/180ns
    3.8mJ (off)
    20V
    5V
    ROHS3 Compliant
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • IXGX64N60B3D1
    IXGX64N60B3D1
    IXYS
    30 Weeks
    Through Hole
    Through Hole
    TO-247-3
    -
    SILICON
    -
    Tube
    GenX3™
    2012
    e1
    yes
    Active
    1 (Unlimited)
    3
    Tin/Silver/Copper (Sn/Ag/Cu)
    Insulated Gate BIP Transistors
    460W
    NOT SPECIFIED
    -
    NOT SPECIFIED
    -
    3
    Not Qualified
    1
    -
    COLLECTOR
    Standard
    -
    POWER CONTROL
    N-CHANNEL
    1.8V
    64A
    600V
    -
    -
    64 ns
    480V, 50A, 3 Ω, 15V
    1.8V @ 15V, 50A
    326 ns
    PT
    168nC
    400A
    25ns/138ns
    1.5mJ (on), 1mJ (off)
    20V
    5V
    ROHS3 Compliant
    LOW CONDUCTION LOSS
    SINGLE
    R-PSIP-T3
    150°C
    SINGLE WITH BUILT-IN DIODE
    35ns
    -
    -
    -
    -
    IXGX35N120B vs IXGX64N60B3D1
  • IXGX120N60A3
    IXGX120N60A3
    IXYS
    30 Weeks
    Through Hole
    Through Hole
    TO-247-3
    3
    SILICON
    -55°C~150°C TJ
    Tube
    GenX3™
    2009
    e1
    yes
    Active
    1 (Unlimited)
    3
    TIN SILVER COPPER
    Insulated Gate BIP Transistors
    780W
    NOT SPECIFIED
    unknown
    NOT SPECIFIED
    IXG*120N60
    3
    Not Qualified
    1
    Single
    COLLECTOR
    Standard
    -
    POWER CONTROL
    N-CHANNEL
    600V
    200A
    600V
    -
    1.2V
    123 ns
    480V, 100A, 1.5 Ω, 15V
    1.35V @ 15V, 100A
    830 ns
    PT
    450nC
    600A
    39ns/295ns
    2.7mJ (on), 6.6mJ (off)
    20V
    5V
    ROHS3 Compliant
    LOW CONDUCTION LOSS
    -
    -
    -
    -
    -
    780W
    Lead Free
    -
    -
    IXGX35N120B vs IXGX120N60A3
  • IXGX72N60B3H1
    IXGX72N60B3H1
    IXYS
    8 Weeks
    Through Hole
    Through Hole
    TO-247-3
    -
    SILICON
    -55°C~150°C TJ
    Tube
    GenX3™
    2009
    e1
    yes
    Active
    1 (Unlimited)
    3
    TIN SILVER COPPER
    Insulated Gate BIP Transistors
    540W
    NOT SPECIFIED
    unknown
    NOT SPECIFIED
    IXG*72N60
    3
    Not Qualified
    1
    -
    COLLECTOR
    Standard
    -
    POWER CONTROL
    N-CHANNEL
    1.8V
    75A
    600V
    -
    1.5V
    63 ns
    480V, 50A, 3 Ω, 15V
    1.8V @ 15V, 60A
    370 ns
    PT
    225nC
    450A
    31ns/152ns
    1.4mJ (on), 1mJ (off)
    20V
    5V
    ROHS3 Compliant
    LOW CONDUCTION LOSS
    SINGLE
    R-PSIP-T3
    -
    SINGLE WITH BUILT-IN DIODE
    140 ns
    540W
    Lead Free
    EAR99
    150ns
    IXGX35N120B vs IXGX72N60B3H1
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS
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