IXGX50N120C3H1

IXYS IXGX50N120C3H1

Part Number:
IXGX50N120C3H1
Manufacturer:
IXYS
Ventron No:
3587277-IXGX50N120C3H1
Description:
IGBT 1200V 95A 460W PLUS247
ECAD Model:
Datasheet:
IXGX50N120C3H1

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Specifications
IXYS IXGX50N120C3H1 technical specifications, attributes, parameters and parts with similar specifications to IXYS IXGX50N120C3H1.
  • Factory Lead Time
    8 Weeks
  • Mount
    Through Hole
  • Mounting Type
    Through Hole
  • Package / Case
    TO-247-3
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Tube
  • Series
    GenX3™
  • Published
    2012
  • JESD-609 Code
    e1
  • Pbfree Code
    yes
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    3
  • Terminal Finish
    Tin/Silver/Copper (Sn/Ag/Cu)
  • Additional Feature
    LOW CONDUCTION LOSS
  • Subcategory
    Insulated Gate BIP Transistors
  • Max Power Dissipation
    460W
  • Terminal Position
    SINGLE
  • Peak Reflow Temperature (Cel)
    NOT SPECIFIED
  • Time@Peak Reflow Temperature-Max (s)
    NOT SPECIFIED
  • Pin Count
    3
  • JESD-30 Code
    R-PSIP-T3
  • Qualification Status
    Not Qualified
  • Number of Elements
    1
  • Configuration
    SINGLE WITH BUILT-IN DIODE
  • Case Connection
    COLLECTOR
  • Input Type
    Standard
  • Power - Max
    460W
  • Transistor Application
    POWER CONTROL
  • Polarity/Channel Type
    N-CHANNEL
  • Collector Emitter Voltage (VCEO)
    4.2V
  • Max Collector Current
    95A
  • Reverse Recovery Time
    75 ns
  • Collector Emitter Breakdown Voltage
    1.2kV
  • Voltage - Collector Emitter Breakdown (Max)
    1200V
  • Turn On Time
    60 ns
  • Test Condition
    600V, 40A, 2 Ω, 15V
  • Vce(on) (Max) @ Vge, Ic
    4.2V @ 15V, 40A
  • Turn Off Time-Nom (toff)
    485 ns
  • IGBT Type
    PT
  • Gate Charge
    196nC
  • Current - Collector Pulsed (Icm)
    240A
  • Td (on/off) @ 25°C
    31ns/123ns
  • Switching Energy
    2mJ (on), 630μJ (off)
  • Gate-Emitter Voltage-Max
    20V
  • Gate-Emitter Thr Voltage-Max
    5V
  • RoHS Status
    ROHS3 Compliant
Description
IXGX50N120C3H1 Overview
This product is manufactured by IXYS and belongs to the category of Transistors - IGBTs - Single. The images we provide are for reference only, for detailed product information please see specification sheet IXGX50N120C3H1 or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of IXGX50N120C3H1. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
IXGX50N120C3H1 More Descriptions
Trans IGBT Chip N-CH 1200V 95A 460000mW 3-Pin(3 Tab) PLUS 247
Insulated Gate Bipolar Transistor, 95A I(C), 1200V V(BR)CES, N-Channel
IGBT 1200V 95A 460W PLUS247
Product Comparison
The three parts on the right have similar specifications to IXGX50N120C3H1.
  • Image
    Part Number
    Manufacturer
    Factory Lead Time
    Mount
    Mounting Type
    Package / Case
    Transistor Element Material
    Operating Temperature
    Packaging
    Series
    Published
    JESD-609 Code
    Pbfree Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    Terminal Finish
    Additional Feature
    Subcategory
    Max Power Dissipation
    Terminal Position
    Peak Reflow Temperature (Cel)
    Time@Peak Reflow Temperature-Max (s)
    Pin Count
    JESD-30 Code
    Qualification Status
    Number of Elements
    Configuration
    Case Connection
    Input Type
    Power - Max
    Transistor Application
    Polarity/Channel Type
    Collector Emitter Voltage (VCEO)
    Max Collector Current
    Reverse Recovery Time
    Collector Emitter Breakdown Voltage
    Voltage - Collector Emitter Breakdown (Max)
    Turn On Time
    Test Condition
    Vce(on) (Max) @ Vge, Ic
    Turn Off Time-Nom (toff)
    IGBT Type
    Gate Charge
    Current - Collector Pulsed (Icm)
    Td (on/off) @ 25°C
    Switching Energy
    Gate-Emitter Voltage-Max
    Gate-Emitter Thr Voltage-Max
    RoHS Status
    Base Part Number
    Operating Temperature (Max)
    Collector Current-Max (IC)
    Number of Pins
    Reach Compliance Code
    Element Configuration
    Power Dissipation
    Collector Emitter Saturation Voltage
    Lead Free
    View Compare
  • IXGX50N120C3H1
    IXGX50N120C3H1
    8 Weeks
    Through Hole
    Through Hole
    TO-247-3
    SILICON
    -55°C~150°C TJ
    Tube
    GenX3™
    2012
    e1
    yes
    Active
    1 (Unlimited)
    3
    Tin/Silver/Copper (Sn/Ag/Cu)
    LOW CONDUCTION LOSS
    Insulated Gate BIP Transistors
    460W
    SINGLE
    NOT SPECIFIED
    NOT SPECIFIED
    3
    R-PSIP-T3
    Not Qualified
    1
    SINGLE WITH BUILT-IN DIODE
    COLLECTOR
    Standard
    460W
    POWER CONTROL
    N-CHANNEL
    4.2V
    95A
    75 ns
    1.2kV
    1200V
    60 ns
    600V, 40A, 2 Ω, 15V
    4.2V @ 15V, 40A
    485 ns
    PT
    196nC
    240A
    31ns/123ns
    2mJ (on), 630μJ (off)
    20V
    5V
    ROHS3 Compliant
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • IXGX40N120BD1
    8 Weeks
    Through Hole
    Through Hole
    ISOPLUS247™
    SILICON
    -
    Tube
    -
    -
    e1
    yes
    Active
    1 (Unlimited)
    3
    TIN SILVER COPPER
    -
    -
    -
    SINGLE
    NOT SPECIFIED
    NOT SPECIFIED
    3
    R-PSIP-T3
    Not Qualified
    1
    SINGLE WITH BUILT-IN DIODE
    COLLECTOR
    Standard
    -
    POWER CONTROL
    N-CHANNEL
    -
    -
    -
    1.2kV
    1200V
    105 ns
    -
    -
    1030 ns
    -
    -
    -
    -
    -
    -
    -
    ROHS3 Compliant
    IXG*40N120
    150°C
    75A
    -
    -
    -
    -
    -
    -
  • IXGX120N60B3
    30 Weeks
    Through Hole
    Through Hole
    TO-247-3
    SILICON
    -55°C~150°C TJ
    Tube
    GenX3™
    2009
    e1
    yes
    Active
    1 (Unlimited)
    3
    TIN SILVER COPPER
    -
    Insulated Gate BIP Transistors
    780W
    -
    NOT SPECIFIED
    NOT SPECIFIED
    3
    -
    Not Qualified
    1
    -
    COLLECTOR
    Standard
    -
    POWER CONTROL
    N-CHANNEL
    1.8V
    280A
    -
    600V
    -
    123 ns
    480V, 100A, 2 Ω, 15V
    1.8V @ 15V, 100A
    520 ns
    PT
    465nC
    600A
    40ns/227ns
    2.9mJ (on), 3.5mJ (off)
    20V
    5V
    ROHS3 Compliant
    IXG*120N60
    -
    -
    3
    unknown
    Single
    780W
    1.5V
    Lead Free
  • IXGX35N120B
    25 Weeks
    Through Hole
    Through Hole
    TO-247-3
    SILICON
    -55°C~150°C TJ
    Tube
    HiPerFAST™
    2002
    e1
    yes
    Active
    1 (Unlimited)
    3
    TIN SILVER COPPER
    -
    Insulated Gate BIP Transistors
    350W
    -
    NOT SPECIFIED
    NOT SPECIFIED
    3
    -
    Not Qualified
    1
    -
    COLLECTOR
    Standard
    350W
    MOTOR CONTROL
    N-CHANNEL
    1.2kV
    70A
    -
    1.2kV
    1200V
    86 ns
    960V, 35A, 5 Ω, 15V
    3.3V @ 15V, 35A
    660 ns
    PT
    170nC
    140A
    50ns/180ns
    3.8mJ (off)
    20V
    5V
    ROHS3 Compliant
    IXG*35N120
    -
    -
    3
    unknown
    Single
    -
    3.3V
    -
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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