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IXGX72N60B3H1

IXYS IXGX72N60B3H1

Part Number:
IXGX72N60B3H1
Manufacturer:
IXYS
Ventron No:
2855091-IXGX72N60B3H1
Description:
IGBT 600V 75A 540W PLUS247
ECAD Model:
Datasheet:
IXGX72N60B3H1

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Specifications
IXYS IXGX72N60B3H1 technical specifications, attributes, parameters and parts with similar specifications to IXYS IXGX72N60B3H1.
  • Factory Lead Time
    8 Weeks
  • Mount
    Through Hole
  • Mounting Type
    Through Hole
  • Package / Case
    TO-247-3
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Tube
  • Series
    GenX3™
  • Published
    2009
  • JESD-609 Code
    e1
  • Pbfree Code
    yes
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    3
  • ECCN Code
    EAR99
  • Terminal Finish
    TIN SILVER COPPER
  • Additional Feature
    LOW CONDUCTION LOSS
  • Subcategory
    Insulated Gate BIP Transistors
  • Max Power Dissipation
    540W
  • Terminal Position
    SINGLE
  • Peak Reflow Temperature (Cel)
    NOT SPECIFIED
  • Reach Compliance Code
    unknown
  • Time@Peak Reflow Temperature-Max (s)
    NOT SPECIFIED
  • Base Part Number
    IXG*72N60
  • Pin Count
    3
  • JESD-30 Code
    R-PSIP-T3
  • Qualification Status
    Not Qualified
  • Number of Elements
    1
  • Configuration
    SINGLE WITH BUILT-IN DIODE
  • Power Dissipation
    540W
  • Case Connection
    COLLECTOR
  • Input Type
    Standard
  • Transistor Application
    POWER CONTROL
  • Polarity/Channel Type
    N-CHANNEL
  • Collector Emitter Voltage (VCEO)
    1.8V
  • Max Collector Current
    75A
  • Reverse Recovery Time
    140 ns
  • Collector Emitter Breakdown Voltage
    600V
  • Collector Emitter Saturation Voltage
    1.5V
  • Turn On Time
    63 ns
  • Test Condition
    480V, 50A, 3 Ω, 15V
  • Vce(on) (Max) @ Vge, Ic
    1.8V @ 15V, 60A
  • Turn Off Time-Nom (toff)
    370 ns
  • IGBT Type
    PT
  • Gate Charge
    225nC
  • Current - Collector Pulsed (Icm)
    450A
  • Td (on/off) @ 25°C
    31ns/152ns
  • Switching Energy
    1.4mJ (on), 1mJ (off)
  • Gate-Emitter Voltage-Max
    20V
  • Gate-Emitter Thr Voltage-Max
    5V
  • Fall Time-Max (tf)
    150ns
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Lead Free
Description
IXGX72N60B3H1 Overview
This product is manufactured by IXYS and belongs to the category of Transistors - IGBTs - Single. The images we provide are for reference only, for detailed product information please see specification sheet IXGX72N60B3H1 or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of IXGX72N60B3H1. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
IXGX72N60B3H1 More Descriptions
Trans IGBT Chip N-CH 600V 178A 540000mW 3-Pin(3 Tab) PLUS 247
IC QUAD DIFF COMPARATOR 14-TSSOP
Insulated Gate Bipolar Transistors
Product Comparison
The three parts on the right have similar specifications to IXGX72N60B3H1.
  • Image
    Part Number
    Manufacturer
    Factory Lead Time
    Mount
    Mounting Type
    Package / Case
    Transistor Element Material
    Operating Temperature
    Packaging
    Series
    Published
    JESD-609 Code
    Pbfree Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    ECCN Code
    Terminal Finish
    Additional Feature
    Subcategory
    Max Power Dissipation
    Terminal Position
    Peak Reflow Temperature (Cel)
    Reach Compliance Code
    Time@Peak Reflow Temperature-Max (s)
    Base Part Number
    Pin Count
    JESD-30 Code
    Qualification Status
    Number of Elements
    Configuration
    Power Dissipation
    Case Connection
    Input Type
    Transistor Application
    Polarity/Channel Type
    Collector Emitter Voltage (VCEO)
    Max Collector Current
    Reverse Recovery Time
    Collector Emitter Breakdown Voltage
    Collector Emitter Saturation Voltage
    Turn On Time
    Test Condition
    Vce(on) (Max) @ Vge, Ic
    Turn Off Time-Nom (toff)
    IGBT Type
    Gate Charge
    Current - Collector Pulsed (Icm)
    Td (on/off) @ 25°C
    Switching Energy
    Gate-Emitter Voltage-Max
    Gate-Emitter Thr Voltage-Max
    Fall Time-Max (tf)
    RoHS Status
    Lead Free
    Operating Temperature (Max)
    Power - Max
    Voltage - Collector Emitter Breakdown (Max)
    Number of Pins
    Element Configuration
    View Compare
  • IXGX72N60B3H1
    IXGX72N60B3H1
    IXYS
    8 Weeks
    Through Hole
    Through Hole
    TO-247-3
    SILICON
    -55°C~150°C TJ
    Tube
    GenX3™
    2009
    e1
    yes
    Active
    1 (Unlimited)
    3
    EAR99
    TIN SILVER COPPER
    LOW CONDUCTION LOSS
    Insulated Gate BIP Transistors
    540W
    SINGLE
    NOT SPECIFIED
    unknown
    NOT SPECIFIED
    IXG*72N60
    3
    R-PSIP-T3
    Not Qualified
    1
    SINGLE WITH BUILT-IN DIODE
    540W
    COLLECTOR
    Standard
    POWER CONTROL
    N-CHANNEL
    1.8V
    75A
    140 ns
    600V
    1.5V
    63 ns
    480V, 50A, 3 Ω, 15V
    1.8V @ 15V, 60A
    370 ns
    PT
    225nC
    450A
    31ns/152ns
    1.4mJ (on), 1mJ (off)
    20V
    5V
    150ns
    ROHS3 Compliant
    Lead Free
    -
    -
    -
    -
    -
    -
  • IXGX64N60B3D1
    IXGX64N60B3D1
    IXYS
    30 Weeks
    Through Hole
    Through Hole
    TO-247-3
    SILICON
    -
    Tube
    GenX3™
    2012
    e1
    yes
    Active
    1 (Unlimited)
    3
    -
    Tin/Silver/Copper (Sn/Ag/Cu)
    LOW CONDUCTION LOSS
    Insulated Gate BIP Transistors
    460W
    SINGLE
    NOT SPECIFIED
    -
    NOT SPECIFIED
    -
    3
    R-PSIP-T3
    Not Qualified
    1
    SINGLE WITH BUILT-IN DIODE
    -
    COLLECTOR
    Standard
    POWER CONTROL
    N-CHANNEL
    1.8V
    64A
    35ns
    600V
    -
    64 ns
    480V, 50A, 3 Ω, 15V
    1.8V @ 15V, 50A
    326 ns
    PT
    168nC
    400A
    25ns/138ns
    1.5mJ (on), 1mJ (off)
    20V
    5V
    -
    ROHS3 Compliant
    -
    150°C
    -
    -
    -
    -
    IXGX72N60B3H1 vs IXGX64N60B3D1
  • IXGX50N120C3H1
    IXGX50N120C3H1
    IXYS
    8 Weeks
    Through Hole
    Through Hole
    TO-247-3
    SILICON
    -55°C~150°C TJ
    Tube
    GenX3™
    2012
    e1
    yes
    Active
    1 (Unlimited)
    3
    -
    Tin/Silver/Copper (Sn/Ag/Cu)
    LOW CONDUCTION LOSS
    Insulated Gate BIP Transistors
    460W
    SINGLE
    NOT SPECIFIED
    -
    NOT SPECIFIED
    -
    3
    R-PSIP-T3
    Not Qualified
    1
    SINGLE WITH BUILT-IN DIODE
    -
    COLLECTOR
    Standard
    POWER CONTROL
    N-CHANNEL
    4.2V
    95A
    75 ns
    1.2kV
    -
    60 ns
    600V, 40A, 2 Ω, 15V
    4.2V @ 15V, 40A
    485 ns
    PT
    196nC
    240A
    31ns/123ns
    2mJ (on), 630μJ (off)
    20V
    5V
    -
    ROHS3 Compliant
    -
    -
    460W
    1200V
    -
    -
    IXGX72N60B3H1 vs IXGX50N120C3H1
  • IXGX120N60A3
    IXGX120N60A3
    IXYS
    30 Weeks
    Through Hole
    Through Hole
    TO-247-3
    SILICON
    -55°C~150°C TJ
    Tube
    GenX3™
    2009
    e1
    yes
    Active
    1 (Unlimited)
    3
    -
    TIN SILVER COPPER
    LOW CONDUCTION LOSS
    Insulated Gate BIP Transistors
    780W
    -
    NOT SPECIFIED
    unknown
    NOT SPECIFIED
    IXG*120N60
    3
    -
    Not Qualified
    1
    -
    780W
    COLLECTOR
    Standard
    POWER CONTROL
    N-CHANNEL
    600V
    200A
    -
    600V
    1.2V
    123 ns
    480V, 100A, 1.5 Ω, 15V
    1.35V @ 15V, 100A
    830 ns
    PT
    450nC
    600A
    39ns/295ns
    2.7mJ (on), 6.6mJ (off)
    20V
    5V
    -
    ROHS3 Compliant
    Lead Free
    -
    -
    -
    3
    Single
    IXGX72N60B3H1 vs IXGX120N60A3
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS
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