IXYS IXGX72N60C3H1
- Part Number:
- IXGX72N60C3H1
- Manufacturer:
- IXYS
- Ventron No:
- 3587357-IXGX72N60C3H1
- Description:
- IGBT 600V 75A 540W PLUS247
- Datasheet:
- IXGX72N60C3H1
IXYS IXGX72N60C3H1 technical specifications, attributes, parameters and parts with similar specifications to IXYS IXGX72N60C3H1.
- Factory Lead Time8 Weeks
- MountThrough Hole
- Mounting TypeThrough Hole
- Package / CaseTO-247-3
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTube
- SeriesGenX3™
- Published2009
- JESD-609 Codee1
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- Terminal FinishTIN SILVER COPPER
- Additional FeatureLOW CONDUCTION LOSS
- SubcategoryInsulated Gate BIP Transistors
- Max Power Dissipation540W
- Terminal PositionSINGLE
- Peak Reflow Temperature (Cel)NOT SPECIFIED
- Reach Compliance Codeunknown
- Time@Peak Reflow Temperature-Max (s)NOT SPECIFIED
- Base Part NumberIXG*72N60
- Pin Count3
- JESD-30 CodeR-PSFM-T3
- Qualification StatusNot Qualified
- Number of Elements1
- ConfigurationSINGLE WITH BUILT-IN DIODE
- Case ConnectionCOLLECTOR
- Input TypeStandard
- Turn On Delay Time27 ns
- Power - Max540W
- Transistor ApplicationPOWER CONTROL
- Polarity/Channel TypeN-CHANNEL
- Turn-Off Delay Time77 ns
- Collector Emitter Voltage (VCEO)2.5V
- Max Collector Current75A
- Reverse Recovery Time140 ns
- Collector Emitter Breakdown Voltage600V
- Turn On Time62 ns
- Test Condition480V, 50A, 2 Ω, 15V
- Vce(on) (Max) @ Vge, Ic2.5V @ 15V, 50A
- Turn Off Time-Nom (toff)244 ns
- IGBT TypePT
- Gate Charge174nC
- Current - Collector Pulsed (Icm)360A
- Td (on/off) @ 25°C27ns/77ns
- Switching Energy1.03mJ (on), 480μJ (off)
- Gate-Emitter Voltage-Max20V
- Gate-Emitter Thr Voltage-Max5.5V
- Fall Time-Max (tf)110ns
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
IXGX72N60C3H1 Overview
This product is manufactured by IXYS and belongs to the category of Transistors - IGBTs - Single. The images we provide are for reference only, for detailed product information please see specification sheet IXGX72N60C3H1 or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of IXGX72N60C3H1. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
This product is manufactured by IXYS and belongs to the category of Transistors - IGBTs - Single. The images we provide are for reference only, for detailed product information please see specification sheet IXGX72N60C3H1 or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of IXGX72N60C3H1. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
IXGX72N60C3H1 More Descriptions
IXGX72N60C3H1 Series 600 V 75 A Through Hole High-Speed PT IGBT - PLUS247
IGBT 600V 75A 540W PLUS247
OEMs, CMs ONLY (NO BROKERS)
IGBT 600V 75A 540W PLUS247
OEMs, CMs ONLY (NO BROKERS)
The three parts on the right have similar specifications to IXGX72N60C3H1.
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ImagePart NumberManufacturerFactory Lead TimeMountMounting TypePackage / CaseTransistor Element MaterialOperating TemperaturePackagingSeriesPublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsTerminal FinishAdditional FeatureSubcategoryMax Power DissipationTerminal PositionPeak Reflow Temperature (Cel)Reach Compliance CodeTime@Peak Reflow Temperature-Max (s)Base Part NumberPin CountJESD-30 CodeQualification StatusNumber of ElementsConfigurationCase ConnectionInput TypeTurn On Delay TimePower - MaxTransistor ApplicationPolarity/Channel TypeTurn-Off Delay TimeCollector Emitter Voltage (VCEO)Max Collector CurrentReverse Recovery TimeCollector Emitter Breakdown VoltageTurn On TimeTest ConditionVce(on) (Max) @ Vge, IcTurn Off Time-Nom (toff)IGBT TypeGate ChargeCurrent - Collector Pulsed (Icm)Td (on/off) @ 25°CSwitching EnergyGate-Emitter Voltage-MaxGate-Emitter Thr Voltage-MaxFall Time-Max (tf)RoHS StatusLead FreeVoltage - Collector Emitter Breakdown (Max)Operating Temperature (Max)Collector Current-Max (IC)Number of PinsElement ConfigurationPower DissipationCollector Emitter Saturation VoltageView Compare
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IXGX72N60C3H18 WeeksThrough HoleThrough HoleTO-247-3SILICON-55°C~150°C TJTubeGenX3™2009e1yesActive1 (Unlimited)3TIN SILVER COPPERLOW CONDUCTION LOSSInsulated Gate BIP Transistors540WSINGLENOT SPECIFIEDunknownNOT SPECIFIEDIXG*72N603R-PSFM-T3Not Qualified1SINGLE WITH BUILT-IN DIODECOLLECTORStandard27 ns540WPOWER CONTROLN-CHANNEL77 ns2.5V75A140 ns600V62 ns480V, 50A, 2 Ω, 15V2.5V @ 15V, 50A244 nsPT174nC360A27ns/77ns1.03mJ (on), 480μJ (off)20V5.5V110nsROHS3 CompliantLead Free--------
-
8 WeeksThrough HoleThrough HoleTO-247-3SILICON-55°C~150°C TJTubeGenX3™2012e1yesActive1 (Unlimited)3Tin/Silver/Copper (Sn/Ag/Cu)LOW CONDUCTION LOSSInsulated Gate BIP Transistors460WSINGLENOT SPECIFIED-NOT SPECIFIED-3R-PSIP-T3Not Qualified1SINGLE WITH BUILT-IN DIODECOLLECTORStandard-460WPOWER CONTROLN-CHANNEL-4.2V95A75 ns1.2kV60 ns600V, 40A, 2 Ω, 15V4.2V @ 15V, 40A485 nsPT196nC240A31ns/123ns2mJ (on), 630μJ (off)20V5V-ROHS3 Compliant-1200V------
-
8 WeeksThrough HoleThrough HoleISOPLUS247™SILICON-Tube--e1yesActive1 (Unlimited)3TIN SILVER COPPER---SINGLENOT SPECIFIED-NOT SPECIFIEDIXG*40N1203R-PSIP-T3Not Qualified1SINGLE WITH BUILT-IN DIODECOLLECTORStandard--POWER CONTROLN-CHANNEL----1.2kV105 ns--1030 ns--------ROHS3 Compliant-1200V150°C75A----
-
30 WeeksThrough HoleThrough HoleTO-247-3SILICON-55°C~150°C TJTubeGenX3™2009e1yesActive1 (Unlimited)3TIN SILVER COPPER-Insulated Gate BIP Transistors780W-NOT SPECIFIEDunknownNOT SPECIFIEDIXG*120N603-Not Qualified1-COLLECTORStandard--POWER CONTROLN-CHANNEL-1.8V280A-600V123 ns480V, 100A, 2 Ω, 15V1.8V @ 15V, 100A520 nsPT465nC600A40ns/227ns2.9mJ (on), 3.5mJ (off)20V5V-ROHS3 CompliantLead Free---3Single780W1.5V
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