IXGX72N60C3H1

IXYS IXGX72N60C3H1

Part Number:
IXGX72N60C3H1
Manufacturer:
IXYS
Ventron No:
3587357-IXGX72N60C3H1
Description:
IGBT 600V 75A 540W PLUS247
ECAD Model:
Datasheet:
IXGX72N60C3H1

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Specifications
IXYS IXGX72N60C3H1 technical specifications, attributes, parameters and parts with similar specifications to IXYS IXGX72N60C3H1.
  • Factory Lead Time
    8 Weeks
  • Mount
    Through Hole
  • Mounting Type
    Through Hole
  • Package / Case
    TO-247-3
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Tube
  • Series
    GenX3™
  • Published
    2009
  • JESD-609 Code
    e1
  • Pbfree Code
    yes
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    3
  • Terminal Finish
    TIN SILVER COPPER
  • Additional Feature
    LOW CONDUCTION LOSS
  • Subcategory
    Insulated Gate BIP Transistors
  • Max Power Dissipation
    540W
  • Terminal Position
    SINGLE
  • Peak Reflow Temperature (Cel)
    NOT SPECIFIED
  • Reach Compliance Code
    unknown
  • Time@Peak Reflow Temperature-Max (s)
    NOT SPECIFIED
  • Base Part Number
    IXG*72N60
  • Pin Count
    3
  • JESD-30 Code
    R-PSFM-T3
  • Qualification Status
    Not Qualified
  • Number of Elements
    1
  • Configuration
    SINGLE WITH BUILT-IN DIODE
  • Case Connection
    COLLECTOR
  • Input Type
    Standard
  • Turn On Delay Time
    27 ns
  • Power - Max
    540W
  • Transistor Application
    POWER CONTROL
  • Polarity/Channel Type
    N-CHANNEL
  • Turn-Off Delay Time
    77 ns
  • Collector Emitter Voltage (VCEO)
    2.5V
  • Max Collector Current
    75A
  • Reverse Recovery Time
    140 ns
  • Collector Emitter Breakdown Voltage
    600V
  • Turn On Time
    62 ns
  • Test Condition
    480V, 50A, 2 Ω, 15V
  • Vce(on) (Max) @ Vge, Ic
    2.5V @ 15V, 50A
  • Turn Off Time-Nom (toff)
    244 ns
  • IGBT Type
    PT
  • Gate Charge
    174nC
  • Current - Collector Pulsed (Icm)
    360A
  • Td (on/off) @ 25°C
    27ns/77ns
  • Switching Energy
    1.03mJ (on), 480μJ (off)
  • Gate-Emitter Voltage-Max
    20V
  • Gate-Emitter Thr Voltage-Max
    5.5V
  • Fall Time-Max (tf)
    110ns
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Lead Free
Description
IXGX72N60C3H1 Overview
This product is manufactured by IXYS and belongs to the category of Transistors - IGBTs - Single. The images we provide are for reference only, for detailed product information please see specification sheet IXGX72N60C3H1 or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of IXGX72N60C3H1. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
IXGX72N60C3H1 More Descriptions
IXGX72N60C3H1 Series 600 V 75 A Through Hole High-Speed PT IGBT - PLUS247
IGBT 600V 75A 540W PLUS247
OEMs, CMs ONLY (NO BROKERS)
Product Comparison
The three parts on the right have similar specifications to IXGX72N60C3H1.
  • Image
    Part Number
    Manufacturer
    Factory Lead Time
    Mount
    Mounting Type
    Package / Case
    Transistor Element Material
    Operating Temperature
    Packaging
    Series
    Published
    JESD-609 Code
    Pbfree Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    Terminal Finish
    Additional Feature
    Subcategory
    Max Power Dissipation
    Terminal Position
    Peak Reflow Temperature (Cel)
    Reach Compliance Code
    Time@Peak Reflow Temperature-Max (s)
    Base Part Number
    Pin Count
    JESD-30 Code
    Qualification Status
    Number of Elements
    Configuration
    Case Connection
    Input Type
    Turn On Delay Time
    Power - Max
    Transistor Application
    Polarity/Channel Type
    Turn-Off Delay Time
    Collector Emitter Voltage (VCEO)
    Max Collector Current
    Reverse Recovery Time
    Collector Emitter Breakdown Voltage
    Turn On Time
    Test Condition
    Vce(on) (Max) @ Vge, Ic
    Turn Off Time-Nom (toff)
    IGBT Type
    Gate Charge
    Current - Collector Pulsed (Icm)
    Td (on/off) @ 25°C
    Switching Energy
    Gate-Emitter Voltage-Max
    Gate-Emitter Thr Voltage-Max
    Fall Time-Max (tf)
    RoHS Status
    Lead Free
    Voltage - Collector Emitter Breakdown (Max)
    Operating Temperature (Max)
    Collector Current-Max (IC)
    Number of Pins
    Element Configuration
    Power Dissipation
    Collector Emitter Saturation Voltage
    View Compare
  • IXGX72N60C3H1
    IXGX72N60C3H1
    8 Weeks
    Through Hole
    Through Hole
    TO-247-3
    SILICON
    -55°C~150°C TJ
    Tube
    GenX3™
    2009
    e1
    yes
    Active
    1 (Unlimited)
    3
    TIN SILVER COPPER
    LOW CONDUCTION LOSS
    Insulated Gate BIP Transistors
    540W
    SINGLE
    NOT SPECIFIED
    unknown
    NOT SPECIFIED
    IXG*72N60
    3
    R-PSFM-T3
    Not Qualified
    1
    SINGLE WITH BUILT-IN DIODE
    COLLECTOR
    Standard
    27 ns
    540W
    POWER CONTROL
    N-CHANNEL
    77 ns
    2.5V
    75A
    140 ns
    600V
    62 ns
    480V, 50A, 2 Ω, 15V
    2.5V @ 15V, 50A
    244 ns
    PT
    174nC
    360A
    27ns/77ns
    1.03mJ (on), 480μJ (off)
    20V
    5.5V
    110ns
    ROHS3 Compliant
    Lead Free
    -
    -
    -
    -
    -
    -
    -
    -
  • IXGX50N120C3H1
    8 Weeks
    Through Hole
    Through Hole
    TO-247-3
    SILICON
    -55°C~150°C TJ
    Tube
    GenX3™
    2012
    e1
    yes
    Active
    1 (Unlimited)
    3
    Tin/Silver/Copper (Sn/Ag/Cu)
    LOW CONDUCTION LOSS
    Insulated Gate BIP Transistors
    460W
    SINGLE
    NOT SPECIFIED
    -
    NOT SPECIFIED
    -
    3
    R-PSIP-T3
    Not Qualified
    1
    SINGLE WITH BUILT-IN DIODE
    COLLECTOR
    Standard
    -
    460W
    POWER CONTROL
    N-CHANNEL
    -
    4.2V
    95A
    75 ns
    1.2kV
    60 ns
    600V, 40A, 2 Ω, 15V
    4.2V @ 15V, 40A
    485 ns
    PT
    196nC
    240A
    31ns/123ns
    2mJ (on), 630μJ (off)
    20V
    5V
    -
    ROHS3 Compliant
    -
    1200V
    -
    -
    -
    -
    -
    -
  • IXGX40N120BD1
    8 Weeks
    Through Hole
    Through Hole
    ISOPLUS247™
    SILICON
    -
    Tube
    -
    -
    e1
    yes
    Active
    1 (Unlimited)
    3
    TIN SILVER COPPER
    -
    -
    -
    SINGLE
    NOT SPECIFIED
    -
    NOT SPECIFIED
    IXG*40N120
    3
    R-PSIP-T3
    Not Qualified
    1
    SINGLE WITH BUILT-IN DIODE
    COLLECTOR
    Standard
    -
    -
    POWER CONTROL
    N-CHANNEL
    -
    -
    -
    -
    1.2kV
    105 ns
    -
    -
    1030 ns
    -
    -
    -
    -
    -
    -
    -
    -
    ROHS3 Compliant
    -
    1200V
    150°C
    75A
    -
    -
    -
    -
  • IXGX120N60B3
    30 Weeks
    Through Hole
    Through Hole
    TO-247-3
    SILICON
    -55°C~150°C TJ
    Tube
    GenX3™
    2009
    e1
    yes
    Active
    1 (Unlimited)
    3
    TIN SILVER COPPER
    -
    Insulated Gate BIP Transistors
    780W
    -
    NOT SPECIFIED
    unknown
    NOT SPECIFIED
    IXG*120N60
    3
    -
    Not Qualified
    1
    -
    COLLECTOR
    Standard
    -
    -
    POWER CONTROL
    N-CHANNEL
    -
    1.8V
    280A
    -
    600V
    123 ns
    480V, 100A, 2 Ω, 15V
    1.8V @ 15V, 100A
    520 ns
    PT
    465nC
    600A
    40ns/227ns
    2.9mJ (on), 3.5mJ (off)
    20V
    5V
    -
    ROHS3 Compliant
    Lead Free
    -
    -
    -
    3
    Single
    780W
    1.5V
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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