IXYS IXGR72N60C3D1

Name: IXGR72N60C3D1
Brand: IXYS
SKU: 3587427-IXGR72N60C3D1
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: IXGR72N60C3D1

Manufacturer:: IXYS

Ventron No:: 3587427-IXGR72N60C3D1

Description:: IGBT 600V 75A 200W ISOPLUS247

ECAD Model:

Datasheet:: IXGR72N60C3D1

Specifications

IXYS IXGR72N60C3D1 technical specifications, attributes, parameters and parts with similar specifications to IXYS IXGR72N60C3D1.

Factory Lead Time
30 Weeks
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
ISOPLUS247™
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tube
Series
GenX3™
Published
2009
JESD-609 Code
e1
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
Terminal Finish
TIN SILVER COPPER
Subcategory
Insulated Gate BIP Transistors
Max Power Dissipation
200W
Terminal Position
SINGLE
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Reach Compliance Code
unknown
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED
Base Part Number
IXG*72N60
Pin Count
3
JESD-30 Code
R-PSFM-T3
Qualification Status
Not Qualified
Number of Elements
1
Configuration
SINGLE WITH BUILT-IN DIODE
Power Dissipation
200W
Case Connection
ISOLATED
Input Type
Standard
Transistor Application
POWER CONTROL
Polarity/Channel Type
N-CHANNEL
Collector Emitter Voltage (VCEO)
2.7V
Max Collector Current
75A
Reverse Recovery Time
35ns
Collector Emitter Breakdown Voltage
600V
Collector Emitter Saturation Voltage
2.1V
Turn On Time
62 ns
Test Condition
480V, 50A, 2 Ω, 15V
Vce(on) (Max) @ Vge, Ic
2.7V @ 15V, 50A
Turn Off Time-Nom (toff)
244 ns
IGBT Type
PT
Gate Charge
175nC
Current - Collector Pulsed (Icm)
400A
Td (on/off) @ 25°C
27ns/77ns
Switching Energy
1.03mJ (on), 480μJ (off)
Gate-Emitter Voltage-Max
20V
Gate-Emitter Thr Voltage-Max
5.5V
Fall Time-Max (tf)
110ns
RoHS Status
ROHS3 Compliant

Description

IXGR72N60C3D1 Overview
This product is manufactured by IXYS and belongs to the category of Transistors - IGBTs - Single. The images we provide are for reference only, for detailed product information please see specification sheet IXGR72N60C3D1 or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of IXGR72N60C3D1. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.

IXGR72N60C3D1 More Descriptions

IGBT 600V 75A 200W ISOPLUS247
French Electronic Distributor since 1988

Product Comparison

The three parts on the right have similar specifications to IXGR72N60C3D1.

Image

Part Number

Manufacturer

Factory Lead Time

Mount

Mounting Type

Package / Case

Transistor Element Material

Operating Temperature

Packaging

Series

Published

JESD-609 Code

Pbfree Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

Terminal Finish

Subcategory

Max Power Dissipation

Terminal Position

Peak Reflow Temperature (Cel)

Reach Compliance Code

Time@Peak Reflow Temperature-Max (s)

Base Part Number

Pin Count

JESD-30 Code

Qualification Status

Number of Elements

Configuration

Power Dissipation

Case Connection

Input Type

Transistor Application

Polarity/Channel Type

Collector Emitter Voltage (VCEO)

Max Collector Current

Reverse Recovery Time

Collector Emitter Breakdown Voltage

Collector Emitter Saturation Voltage

Turn On Time

Test Condition

Vce(on) (Max) @ Vge, Ic

Turn Off Time-Nom (toff)

IGBT Type

Gate Charge

Current - Collector Pulsed (Icm)

Td (on/off) @ 25°C

Switching Energy

Gate-Emitter Voltage-Max

Gate-Emitter Thr Voltage-Max

Fall Time-Max (tf)

RoHS Status

Voltage - Collector Emitter Breakdown (Max)

Number of Pins

Element Configuration

Power - Max

Lead Free

View Compare
IXGR72N60C3D1

IXYS

30 Weeks

Through Hole

Through Hole

ISOPLUS247™

SILICON

-55°C~150°C TJ

Tube

GenX3™

2009

e1

yes

Active

1 (Unlimited)

3

TIN SILVER COPPER

Insulated Gate BIP Transistors

200W

SINGLE

NOT SPECIFIED

unknown

NOT SPECIFIED

IXG*72N60

3

R-PSFM-T3

Not Qualified

1

SINGLE WITH BUILT-IN DIODE

200W

ISOLATED

Standard

POWER CONTROL

N-CHANNEL

2.7V

75A

35ns

600V

2.1V

62 ns

480V, 50A, 2 Ω, 15V

2.7V @ 15V, 50A

244 ns

PT

175nC

400A

27ns/77ns

1.03mJ (on), 480μJ (off)

20V

5.5V

110ns

ROHS3 Compliant

-

-

-

-

-

-
IXGR40N120B2D1

IXYS

-

Through Hole

Through Hole

ISOPLUS247™

-

-

Tube

-

-

-

-

Active

1 (Unlimited)

-

-

-

-

-

-

-

-

IXG*40N120

-

-

-

-

-

-

-

Standard

-

-

-

-

-

1.2kV

-

-

-

-

-

-

-

-

-

-

-

-

-

ROHS3 Compliant

1200V

-

-

-

-

IXGR72N60C3D1 vs IXGR40N120B2D1
IXGR35N120BD1

IXYS

8 Weeks

Through Hole

Through Hole

ISOPLUS247™

SILICON

-55°C~150°C TJ

Tube

-

2004

e1

yes

Active

1 (Unlimited)

3

Tin/Silver/Copper (Sn/Ag/Cu)

-

250W

-

NOT SPECIFIED

unknown

NOT SPECIFIED

IXG*35N120

3

R-PSIP-T3

Not Qualified

1

-

-

ISOLATED

Standard

POWER CONTROL

N-CHANNEL

1.2kV

54A

40 ns

1.2kV

-

105 ns

960V, 35A, 3 Ω, 15V

3.5V @ 15V, 35A

780 ns

-

140nC

200A

40ns/270ns

900μJ (on), 3.8mJ (off)

-

-

-

ROHS3 Compliant

1200V

247

Single

250W

Lead Free

IXGR72N60C3D1 vs IXGR35N120BD1
IXGR32N90B2D1

IXYS

26 Weeks

Through Hole

Through Hole

ISOPLUS247™

SILICON

-55°C~150°C TJ

Tube

HiPerFAST™

2005

e1

yes

Active

1 (Unlimited)

3

TIN SILVER COPPER

-

160W

-

NOT SPECIFIED

unknown

NOT SPECIFIED

IXG*32N90

3

R-PSIP-T3

Not Qualified

1

-

-

ISOLATED

Standard

POWER CONTROL

N-CHANNEL

900V

47A

190 ns

900V

2.9V

42 ns

720V, 32A, 5 Ω, 15V

2.9V @ 15V, 32A

690 ns

PT

89nC

200A

20ns/260ns

2.2mJ (off)

-

-

-

ROHS3 Compliant

-

247

Single

160W

-

IXGR72N60C3D1 vs IXGR32N90B2D1