IXYS IXGR35N120BD1

Name: IXGR35N120BD1
Brand: IXYS
SKU: 3072464-IXGR35N120BD1
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: IXGR35N120BD1

Manufacturer:: IXYS

Ventron No:: 3072464-IXGR35N120BD1

Description:: IGBT 1200V 54A 250W ISOPLUS247

ECAD Model:

Datasheet:: IXGR35N120BD1

Specifications

IXYS IXGR35N120BD1 technical specifications, attributes, parameters and parts with similar specifications to IXYS IXGR35N120BD1.

Factory Lead Time
8 Weeks
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
ISOPLUS247™
Number of Pins
247
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tube
Published
2004
JESD-609 Code
e1
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
Terminal Finish
Tin/Silver/Copper (Sn/Ag/Cu)
Max Power Dissipation
250W
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Reach Compliance Code
unknown
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED
Base Part Number
IXG*35N120
Pin Count
3
JESD-30 Code
R-PSIP-T3
Qualification Status
Not Qualified
Number of Elements
1
Element Configuration
Single
Case Connection
ISOLATED
Input Type
Standard
Power - Max
250W
Transistor Application
POWER CONTROL
Polarity/Channel Type
N-CHANNEL
Collector Emitter Voltage (VCEO)
1.2kV
Max Collector Current
54A
Reverse Recovery Time
40 ns
Collector Emitter Breakdown Voltage
1.2kV
Voltage - Collector Emitter Breakdown (Max)
1200V
Turn On Time
105 ns
Test Condition
960V, 35A, 3 Ω, 15V
Vce(on) (Max) @ Vge, Ic
3.5V @ 15V, 35A
Turn Off Time-Nom (toff)
780 ns
Gate Charge
140nC
Current - Collector Pulsed (Icm)
200A
Td (on/off) @ 25°C
40ns/270ns
Switching Energy
900μJ (on), 3.8mJ (off)
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free

Description

IXGR35N120BD1 Overview
This product is manufactured by IXYS and belongs to the category of Transistors - IGBTs - Single. The images we provide are for reference only, for detailed product information please see specification sheet IXGR35N120BD1 or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of IXGR35N120BD1. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.

IXGR35N120BD1 More Descriptions

IGBT 1200V 54A 250W ISOPLUS247
French Electronic Distributor since 1988

Product Comparison

The three parts on the right have similar specifications to IXGR35N120BD1.

Image

Part Number

Manufacturer

Factory Lead Time

Mount

Mounting Type

Package / Case

Number of Pins

Transistor Element Material

Operating Temperature

Packaging

Published

JESD-609 Code

Pbfree Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

Terminal Finish

Max Power Dissipation

Peak Reflow Temperature (Cel)

Reach Compliance Code

Time@Peak Reflow Temperature-Max (s)

Base Part Number

Pin Count

JESD-30 Code

Qualification Status

Number of Elements

Element Configuration

Case Connection

Input Type

Power - Max

Transistor Application

Polarity/Channel Type

Collector Emitter Voltage (VCEO)

Max Collector Current

Reverse Recovery Time

Collector Emitter Breakdown Voltage

Voltage - Collector Emitter Breakdown (Max)

Turn On Time

Test Condition

Vce(on) (Max) @ Vge, Ic

Turn Off Time-Nom (toff)

Gate Charge

Current - Collector Pulsed (Icm)

Td (on/off) @ 25°C

Switching Energy

RoHS Status

Lead Free

Subcategory

Gate-Emitter Voltage-Max

Gate-Emitter Thr Voltage-Max

Fall Time-Max (tf)

Radiation Hardening

Series

Additional Feature

Power Dissipation

Collector Emitter Saturation Voltage

IGBT Type

View Compare
IXGR35N120BD1

IXYS

8 Weeks

Through Hole

Through Hole

ISOPLUS247™

247

SILICON

-55°C~150°C TJ

Tube

2004

e1

yes

Active

1 (Unlimited)

3

Tin/Silver/Copper (Sn/Ag/Cu)

250W

NOT SPECIFIED

unknown

NOT SPECIFIED

IXG*35N120

3

R-PSIP-T3

Not Qualified

1

Single

ISOLATED

Standard

250W

POWER CONTROL

N-CHANNEL

1.2kV

54A

40 ns

1.2kV

1200V

105 ns

960V, 35A, 3 Ω, 15V

3.5V @ 15V, 35A

780 ns

140nC

200A

40ns/270ns

900μJ (on), 3.8mJ (off)

ROHS3 Compliant

Lead Free

-

-

-

-

-

-

-

-

-

-

-
IXGR6N170A

IXYS

30 Weeks

Through Hole

Through Hole

TO-247-3

247

SILICON

-55°C~150°C TJ

Tube

2010

-

-

Active

1 (Unlimited)

3

-

50W

-

-

-

-

3

R-PSFM-T3

-

1

Single

ISOLATED

Standard

50W

POWER CONTROL

N-CHANNEL

1.7kV

5.5A

-

1.7kV

1700V

91 ns

850V, 6A, 33 Ω, 15V

7V @ 15V, 3A

271 ns

18.5nC

18A

46ns/220ns

590μJ (on), 180μJ (off)

ROHS3 Compliant

-

Insulated Gate BIP Transistors

20V

5V

65ns

No

-

-

-

-

-

IXGR35N120BD1 vs IXGR6N170A
IXGR72N60A3H1

IXYS

8 Weeks

Through Hole

Through Hole

ISOPLUS247™

3

SILICON

-55°C~150°C TJ

Tube

2009

e1

yes

Active

1 (Unlimited)

3

TIN SILVER COPPER

200W

NOT SPECIFIED

unknown

NOT SPECIFIED

IXG*72N60

3

-

Not Qualified

1

Single

ISOLATED

Standard

-

POWER CONTROL

N-CHANNEL

600V

75A

140 ns

600V

-

63 ns

480V, 50A, 3 Ω, 15V

1.45V @ 15V, 60A

885 ns

230nC

400A

31ns/320ns

1.4mJ (on), 3.5mJ (off)

ROHS3 Compliant

-

Insulated Gate BIP Transistors

20V

5V

-

-

GenX3™

LOW CONDUCTION LOSS

200W

600V

PT

IXGR35N120BD1 vs IXGR72N60A3H1
IXGR24N120C3D1

IXYS

30 Weeks

Through Hole

Through Hole

ISOPLUS247™

3

SILICON

-55°C~150°C TJ

Tube

2008

e1

yes

Active

1 (Unlimited)

3

Tin/Silver/Copper (Sn/Ag/Cu)

200W

NOT SPECIFIED

-

NOT SPECIFIED

IXG*24N120

247

-

Not Qualified

1

Single

ISOLATED

Standard

-

POWER CONTROL

N-CHANNEL

4.2V

48A

220 ns

1.2kV

1200V

54 ns

600V, 20A, 5 Ω, 15V

4.2V @ 15V, 20A

430 ns

79nC

96A

16ns/93ns

1.37mJ (on), 470μJ (off)

ROHS3 Compliant

-

-

-

-

-

-

GenX3™

-

200W

3.6V

PT

IXGR35N120BD1 vs IXGR24N120C3D1