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IXGR32N90B2D1

IXYS IXGR32N90B2D1

Part Number:
IXGR32N90B2D1
Manufacturer:
IXYS
Ventron No:
3072268-IXGR32N90B2D1
Description:
IGBT 900V 47A 160W ISOPLUS247
ECAD Model:
Datasheet:
IXGR32N90B2D1

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Specifications
IXYS IXGR32N90B2D1 technical specifications, attributes, parameters and parts with similar specifications to IXYS IXGR32N90B2D1.
  • Factory Lead Time
    26 Weeks
  • Mount
    Through Hole
  • Mounting Type
    Through Hole
  • Package / Case
    ISOPLUS247™
  • Number of Pins
    247
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Tube
  • Series
    HiPerFAST™
  • Published
    2005
  • JESD-609 Code
    e1
  • Pbfree Code
    yes
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    3
  • Terminal Finish
    TIN SILVER COPPER
  • Max Power Dissipation
    160W
  • Peak Reflow Temperature (Cel)
    NOT SPECIFIED
  • Reach Compliance Code
    unknown
  • Time@Peak Reflow Temperature-Max (s)
    NOT SPECIFIED
  • Base Part Number
    IXG*32N90
  • Pin Count
    3
  • JESD-30 Code
    R-PSIP-T3
  • Qualification Status
    Not Qualified
  • Number of Elements
    1
  • Element Configuration
    Single
  • Case Connection
    ISOLATED
  • Input Type
    Standard
  • Power - Max
    160W
  • Transistor Application
    POWER CONTROL
  • Polarity/Channel Type
    N-CHANNEL
  • Collector Emitter Voltage (VCEO)
    900V
  • Max Collector Current
    47A
  • Reverse Recovery Time
    190 ns
  • Collector Emitter Breakdown Voltage
    900V
  • Collector Emitter Saturation Voltage
    2.9V
  • Turn On Time
    42 ns
  • Test Condition
    720V, 32A, 5 Ω, 15V
  • Vce(on) (Max) @ Vge, Ic
    2.9V @ 15V, 32A
  • Turn Off Time-Nom (toff)
    690 ns
  • IGBT Type
    PT
  • Gate Charge
    89nC
  • Current - Collector Pulsed (Icm)
    200A
  • Td (on/off) @ 25°C
    20ns/260ns
  • Switching Energy
    2.2mJ (off)
  • RoHS Status
    ROHS3 Compliant
Description
IXGR32N90B2D1 Overview
This product is manufactured by IXYS and belongs to the category of Transistors - IGBTs - Single. The images we provide are for reference only, for detailed product information please see specification sheet IXGR32N90B2D1 or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of IXGR32N90B2D1. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
IXGR32N90B2D1 More Descriptions
IGBT 900V 47A 160W ISOPLUS247
Contact for details
Product Comparison
The three parts on the right have similar specifications to IXGR32N90B2D1.
  • Image
    Part Number
    Manufacturer
    Factory Lead Time
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Transistor Element Material
    Operating Temperature
    Packaging
    Series
    Published
    JESD-609 Code
    Pbfree Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    Terminal Finish
    Max Power Dissipation
    Peak Reflow Temperature (Cel)
    Reach Compliance Code
    Time@Peak Reflow Temperature-Max (s)
    Base Part Number
    Pin Count
    JESD-30 Code
    Qualification Status
    Number of Elements
    Element Configuration
    Case Connection
    Input Type
    Power - Max
    Transistor Application
    Polarity/Channel Type
    Collector Emitter Voltage (VCEO)
    Max Collector Current
    Reverse Recovery Time
    Collector Emitter Breakdown Voltage
    Collector Emitter Saturation Voltage
    Turn On Time
    Test Condition
    Vce(on) (Max) @ Vge, Ic
    Turn Off Time-Nom (toff)
    IGBT Type
    Gate Charge
    Current - Collector Pulsed (Icm)
    Td (on/off) @ 25°C
    Switching Energy
    RoHS Status
    Voltage - Collector Emitter Breakdown (Max)
    Additional Feature
    Subcategory
    Power Dissipation
    Gate-Emitter Voltage-Max
    Gate-Emitter Thr Voltage-Max
    View Compare
  • IXGR32N90B2D1
    IXGR32N90B2D1
    IXYS
    26 Weeks
    Through Hole
    Through Hole
    ISOPLUS247™
    247
    SILICON
    -55°C~150°C TJ
    Tube
    HiPerFAST™
    2005
    e1
    yes
    Active
    1 (Unlimited)
    3
    TIN SILVER COPPER
    160W
    NOT SPECIFIED
    unknown
    NOT SPECIFIED
    IXG*32N90
    3
    R-PSIP-T3
    Not Qualified
    1
    Single
    ISOLATED
    Standard
    160W
    POWER CONTROL
    N-CHANNEL
    900V
    47A
    190 ns
    900V
    2.9V
    42 ns
    720V, 32A, 5 Ω, 15V
    2.9V @ 15V, 32A
    690 ns
    PT
    89nC
    200A
    20ns/260ns
    2.2mJ (off)
    ROHS3 Compliant
    -
    -
    -
    -
    -
    -
    -
  • IXGR40N120B2D1
    IXGR40N120B2D1
    IXYS
    -
    Through Hole
    Through Hole
    ISOPLUS247™
    -
    -
    -
    Tube
    -
    -
    -
    -
    Active
    1 (Unlimited)
    -
    -
    -
    -
    -
    -
    IXG*40N120
    -
    -
    -
    -
    -
    -
    Standard
    -
    -
    -
    -
    -
    -
    1.2kV
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    ROHS3 Compliant
    1200V
    -
    -
    -
    -
    -
    IXGR32N90B2D1 vs IXGR40N120B2D1
  • IXGR72N60A3H1
    IXGR72N60A3H1
    IXYS
    8 Weeks
    Through Hole
    Through Hole
    ISOPLUS247™
    3
    SILICON
    -55°C~150°C TJ
    Tube
    GenX3™
    2009
    e1
    yes
    Active
    1 (Unlimited)
    3
    TIN SILVER COPPER
    200W
    NOT SPECIFIED
    unknown
    NOT SPECIFIED
    IXG*72N60
    3
    -
    Not Qualified
    1
    Single
    ISOLATED
    Standard
    -
    POWER CONTROL
    N-CHANNEL
    600V
    75A
    140 ns
    600V
    600V
    63 ns
    480V, 50A, 3 Ω, 15V
    1.45V @ 15V, 60A
    885 ns
    PT
    230nC
    400A
    31ns/320ns
    1.4mJ (on), 3.5mJ (off)
    ROHS3 Compliant
    -
    LOW CONDUCTION LOSS
    Insulated Gate BIP Transistors
    200W
    20V
    5V
    IXGR32N90B2D1 vs IXGR72N60A3H1
  • IXGR24N120C3D1
    IXGR24N120C3D1
    IXYS
    30 Weeks
    Through Hole
    Through Hole
    ISOPLUS247™
    3
    SILICON
    -55°C~150°C TJ
    Tube
    GenX3™
    2008
    e1
    yes
    Active
    1 (Unlimited)
    3
    Tin/Silver/Copper (Sn/Ag/Cu)
    200W
    NOT SPECIFIED
    -
    NOT SPECIFIED
    IXG*24N120
    247
    -
    Not Qualified
    1
    Single
    ISOLATED
    Standard
    -
    POWER CONTROL
    N-CHANNEL
    4.2V
    48A
    220 ns
    1.2kV
    3.6V
    54 ns
    600V, 20A, 5 Ω, 15V
    4.2V @ 15V, 20A
    430 ns
    PT
    79nC
    96A
    16ns/93ns
    1.37mJ (on), 470μJ (off)
    ROHS3 Compliant
    1200V
    -
    -
    200W
    -
    -
    IXGR32N90B2D1 vs IXGR24N120C3D1
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS
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