IXYS IXGR40N120B2D1
- Part Number:
- IXGR40N120B2D1
- Manufacturer:
- IXYS
- Ventron No:
- 3554880-IXGR40N120B2D1
- Description:
- IGBT 1200V ISOPLUS247
- Datasheet:
- IXGR40N120B2D1
IXYS IXGR40N120B2D1 technical specifications, attributes, parameters and parts with similar specifications to IXYS IXGR40N120B2D1.
- MountThrough Hole
- Mounting TypeThrough Hole
- Package / CaseISOPLUS247™
- PackagingTube
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Base Part NumberIXG*40N120
- Input TypeStandard
- Collector Emitter Breakdown Voltage1.2kV
- Voltage - Collector Emitter Breakdown (Max)1200V
- RoHS StatusROHS3 Compliant
IXGR40N120B2D1 Overview
This product is manufactured by IXYS and belongs to the category of Transistors - IGBTs - Single. The images we provide are for reference only, for detailed product information please see specification sheet IXGR40N120B2D1 or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of IXGR40N120B2D1. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
This product is manufactured by IXYS and belongs to the category of Transistors - IGBTs - Single. The images we provide are for reference only, for detailed product information please see specification sheet IXGR40N120B2D1 or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of IXGR40N120B2D1. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
IXGR40N120B2D1 More Descriptions
IGBT 1200V ISOPLUS247
The three parts on the right have similar specifications to IXGR40N120B2D1.
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ImagePart NumberManufacturerMountMounting TypePackage / CasePackagingPart StatusMoisture Sensitivity Level (MSL)Base Part NumberInput TypeCollector Emitter Breakdown VoltageVoltage - Collector Emitter Breakdown (Max)RoHS StatusFactory Lead TimeNumber of PinsTransistor Element MaterialOperating TemperaturePublishedNumber of TerminationsSubcategoryMax Power DissipationPin CountJESD-30 CodeNumber of ElementsElement ConfigurationCase ConnectionPower - MaxTransistor ApplicationPolarity/Channel TypeCollector Emitter Voltage (VCEO)Max Collector CurrentTurn On TimeTest ConditionVce(on) (Max) @ Vge, IcTurn Off Time-Nom (toff)Gate ChargeCurrent - Collector Pulsed (Icm)Td (on/off) @ 25°CSwitching EnergyGate-Emitter Voltage-MaxGate-Emitter Thr Voltage-MaxFall Time-Max (tf)Radiation HardeningJESD-609 CodePbfree CodeTerminal FinishPeak Reflow Temperature (Cel)Reach Compliance CodeTime@Peak Reflow Temperature-Max (s)Qualification StatusReverse Recovery TimeLead FreeSeriesAdditional FeaturePower DissipationCollector Emitter Saturation VoltageIGBT TypeView Compare
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IXGR40N120B2D1Through HoleThrough HoleISOPLUS247™TubeActive1 (Unlimited)IXG*40N120Standard1.2kV1200VROHS3 Compliant---------------------------------------------
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Through HoleThrough HoleTO-247-3TubeActive1 (Unlimited)-Standard1.7kV1700VROHS3 Compliant30 Weeks247SILICON-55°C~150°C TJ20103Insulated Gate BIP Transistors50W3R-PSFM-T31SingleISOLATED50WPOWER CONTROLN-CHANNEL1.7kV5.5A91 ns850V, 6A, 33 Ω, 15V7V @ 15V, 3A271 ns18.5nC18A46ns/220ns590μJ (on), 180μJ (off)20V5V65nsNo--------------
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Through HoleThrough HoleISOPLUS247™TubeActive1 (Unlimited)IXG*35N120Standard1.2kV1200VROHS3 Compliant8 Weeks247SILICON-55°C~150°C TJ20043-250W3R-PSIP-T31SingleISOLATED250WPOWER CONTROLN-CHANNEL1.2kV54A105 ns960V, 35A, 3 Ω, 15V3.5V @ 15V, 35A780 ns140nC200A40ns/270ns900μJ (on), 3.8mJ (off)----e1yesTin/Silver/Copper (Sn/Ag/Cu)NOT SPECIFIEDunknownNOT SPECIFIEDNot Qualified40 nsLead Free-----
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Through HoleThrough HoleISOPLUS247™TubeActive1 (Unlimited)IXG*72N60Standard600V-ROHS3 Compliant8 Weeks3SILICON-55°C~150°C TJ20093Insulated Gate BIP Transistors200W3-1SingleISOLATED-POWER CONTROLN-CHANNEL600V75A63 ns480V, 50A, 3 Ω, 15V1.45V @ 15V, 60A885 ns230nC400A31ns/320ns1.4mJ (on), 3.5mJ (off)20V5V--e1yesTIN SILVER COPPERNOT SPECIFIEDunknownNOT SPECIFIEDNot Qualified140 ns-GenX3™LOW CONDUCTION LOSS200W600VPT
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