IXYS IXGR72N60A3H1

Name: IXGR72N60A3H1
Brand: IXYS
SKU: 3072323-IXGR72N60A3H1
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: IXGR72N60A3H1

Manufacturer:: IXYS

Ventron No:: 3072323-IXGR72N60A3H1

Description:: IGBT 600V 75A 200W ISOPLUS247

ECAD Model:

Datasheet:: IXGR72N60A3H1

Specifications

IXYS IXGR72N60A3H1 technical specifications, attributes, parameters and parts with similar specifications to IXYS IXGR72N60A3H1.

Factory Lead Time
8 Weeks
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
ISOPLUS247™
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tube
Series
GenX3™
Published
2009
JESD-609 Code
e1
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
Terminal Finish
TIN SILVER COPPER
Additional Feature
LOW CONDUCTION LOSS
Subcategory
Insulated Gate BIP Transistors
Max Power Dissipation
200W
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Reach Compliance Code
unknown
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED
Base Part Number
IXG*72N60
Pin Count
3
Qualification Status
Not Qualified
Number of Elements
1
Element Configuration
Single
Power Dissipation
200W
Case Connection
ISOLATED
Input Type
Standard
Transistor Application
POWER CONTROL
Polarity/Channel Type
N-CHANNEL
Collector Emitter Voltage (VCEO)
600V
Max Collector Current
75A
Reverse Recovery Time
140 ns
Collector Emitter Breakdown Voltage
600V
Collector Emitter Saturation Voltage
600V
Turn On Time
63 ns
Test Condition
480V, 50A, 3 Ω, 15V
Vce(on) (Max) @ Vge, Ic
1.45V @ 15V, 60A
Turn Off Time-Nom (toff)
885 ns
IGBT Type
PT
Gate Charge
230nC
Current - Collector Pulsed (Icm)
400A
Td (on/off) @ 25°C
31ns/320ns
Switching Energy
1.4mJ (on), 3.5mJ (off)
Gate-Emitter Voltage-Max
20V
Gate-Emitter Thr Voltage-Max
5V
RoHS Status
ROHS3 Compliant

Description

IXGR72N60A3H1 Overview
This product is manufactured by IXYS and belongs to the category of Transistors - IGBTs - Single. The images we provide are for reference only, for detailed product information please see specification sheet IXGR72N60A3H1 or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of IXGR72N60A3H1. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.

IXGR72N60A3H1 More Descriptions

IGBT Modules Low-Frequency Range Low Vcesat w/ Diode
IGBT 600V 75A 200W ISOPLUS247
OEMs, CMs ONLY (NO BROKERS)
Contact for details

Product Comparison

The three parts on the right have similar specifications to IXGR72N60A3H1.

Image

Part Number

Manufacturer

Factory Lead Time

Mount

Mounting Type

Package / Case

Number of Pins

Transistor Element Material

Operating Temperature

Packaging

Series

Published

JESD-609 Code

Pbfree Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

Terminal Finish

Additional Feature

Subcategory

Max Power Dissipation

Peak Reflow Temperature (Cel)

Reach Compliance Code

Time@Peak Reflow Temperature-Max (s)

Base Part Number

Pin Count

Qualification Status

Number of Elements

Element Configuration

Power Dissipation

Case Connection

Input Type

Transistor Application

Polarity/Channel Type

Collector Emitter Voltage (VCEO)

Max Collector Current

Reverse Recovery Time

Collector Emitter Breakdown Voltage

Collector Emitter Saturation Voltage

Turn On Time

Test Condition

Vce(on) (Max) @ Vge, Ic

Turn Off Time-Nom (toff)

IGBT Type

Gate Charge

Current - Collector Pulsed (Icm)

Td (on/off) @ 25°C

Switching Energy

Gate-Emitter Voltage-Max

Gate-Emitter Thr Voltage-Max

RoHS Status

JESD-30 Code

Power - Max

Voltage - Collector Emitter Breakdown (Max)

Fall Time-Max (tf)

Radiation Hardening

View Compare
IXGR72N60A3H1

IXYS

8 Weeks

Through Hole

Through Hole

ISOPLUS247™

3

SILICON

-55°C~150°C TJ

Tube

GenX3™

2009

e1

yes

Active

1 (Unlimited)

3

TIN SILVER COPPER

LOW CONDUCTION LOSS

Insulated Gate BIP Transistors

200W

NOT SPECIFIED

unknown

NOT SPECIFIED

IXG*72N60

3

Not Qualified

1

Single

200W

ISOLATED

Standard

POWER CONTROL

N-CHANNEL

600V

75A

140 ns

600V

600V

63 ns

480V, 50A, 3 Ω, 15V

1.45V @ 15V, 60A

885 ns

PT

230nC

400A

31ns/320ns

1.4mJ (on), 3.5mJ (off)

20V

5V

ROHS3 Compliant

-

-

-

-

-

-
IXGR6N170A

IXYS

30 Weeks

Through Hole

Through Hole

TO-247-3

247

SILICON

-55°C~150°C TJ

Tube

-

2010

-

-

Active

1 (Unlimited)

3

-

-

Insulated Gate BIP Transistors

50W

-

-

-

-

3

-

1

Single

-

ISOLATED

Standard

POWER CONTROL

N-CHANNEL

1.7kV

5.5A

-

1.7kV

-

91 ns

850V, 6A, 33 Ω, 15V

7V @ 15V, 3A

271 ns

-

18.5nC

18A

46ns/220ns

590μJ (on), 180μJ (off)

20V

5V

ROHS3 Compliant

R-PSFM-T3

50W

1700V

65ns

No

IXGR72N60A3H1 vs IXGR6N170A
IXGR40N120B2D1

IXYS

-

Through Hole

Through Hole

ISOPLUS247™

-

-

-

Tube

-

-

-

-

Active

1 (Unlimited)

-

-

-

-

-

-

-

-

IXG*40N120

-

-

-

-

-

-

Standard

-

-

-

-

-

1.2kV

-

-

-

-

-

-

-

-

-

-

-

-

ROHS3 Compliant

-

-

1200V

-

-

IXGR72N60A3H1 vs IXGR40N120B2D1
IXGR32N90B2D1

IXYS

26 Weeks

Through Hole

Through Hole

ISOPLUS247™

247

SILICON

-55°C~150°C TJ

Tube

HiPerFAST™

2005

e1

yes

Active

1 (Unlimited)

3

TIN SILVER COPPER

-

-

160W

NOT SPECIFIED

unknown

NOT SPECIFIED

IXG*32N90

3

Not Qualified

1

Single

-

ISOLATED

Standard

POWER CONTROL

N-CHANNEL

900V

47A

190 ns

900V

2.9V

42 ns

720V, 32A, 5 Ω, 15V

2.9V @ 15V, 32A

690 ns

PT

89nC

200A

20ns/260ns

2.2mJ (off)

-

-

ROHS3 Compliant

R-PSIP-T3

160W

-

-

-

IXGR72N60A3H1 vs IXGR32N90B2D1