IXYS IXGR24N120C3D1

Name: IXGR24N120C3D1
Brand: IXYS
SKU: 3072207-IXGR24N120C3D1
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: IXGR24N120C3D1

Manufacturer:: IXYS

Ventron No:: 3072207-IXGR24N120C3D1

Description:: IGBT 1200V 48A 200W ISOPLUS247

ECAD Model:

Datasheet:: IXGR24N120C3D1

Specifications

IXYS IXGR24N120C3D1 technical specifications, attributes, parameters and parts with similar specifications to IXYS IXGR24N120C3D1.

Factory Lead Time
30 Weeks
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
ISOPLUS247™
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tube
Series
GenX3™
Published
2008
JESD-609 Code
e1
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
Terminal Finish
Tin/Silver/Copper (Sn/Ag/Cu)
Max Power Dissipation
200W
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED
Base Part Number
IXG*24N120
Pin Count
247
Qualification Status
Not Qualified
Number of Elements
1
Element Configuration
Single
Power Dissipation
200W
Case Connection
ISOLATED
Input Type
Standard
Transistor Application
POWER CONTROL
Polarity/Channel Type
N-CHANNEL
Collector Emitter Voltage (VCEO)
4.2V
Max Collector Current
48A
Reverse Recovery Time
220 ns
Collector Emitter Breakdown Voltage
1.2kV
Voltage - Collector Emitter Breakdown (Max)
1200V
Collector Emitter Saturation Voltage
3.6V
Turn On Time
54 ns
Test Condition
600V, 20A, 5 Ω, 15V
Vce(on) (Max) @ Vge, Ic
4.2V @ 15V, 20A
Turn Off Time-Nom (toff)
430 ns
IGBT Type
PT
Gate Charge
79nC
Current - Collector Pulsed (Icm)
96A
Td (on/off) @ 25°C
16ns/93ns
Switching Energy
1.37mJ (on), 470μJ (off)
RoHS Status
ROHS3 Compliant

Description

IXGR24N120C3D1 Overview
This product is manufactured by IXYS and belongs to the category of Transistors - IGBTs - Single. The images we provide are for reference only, for detailed product information please see specification sheet IXGR24N120C3D1 or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of IXGR24N120C3D1. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.

IXGR24N120C3D1 More Descriptions

Disc Igbt Pt-Hifrequency Isoplus247/Tube |Littelfuse IXGR24N120C3D1
High-Frequency Series - 300V - 1400V [>40 kHz] PT (Punch Through) IGBTs, PLUS247™, RoHSLittelfuse SCT
DISC IGBT 1200V ISO247-3
1200V 48A 200W TO247-Isoplus
IGBT PT-HIFREQUENCY

Product Comparison

The three parts on the right have similar specifications to IXGR24N120C3D1.

Image

Part Number

Manufacturer

Factory Lead Time

Mount

Mounting Type

Package / Case

Number of Pins

Transistor Element Material

Operating Temperature

Packaging

Series

Published

JESD-609 Code

Pbfree Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

Terminal Finish

Max Power Dissipation

Peak Reflow Temperature (Cel)

Time@Peak Reflow Temperature-Max (s)

Base Part Number

Pin Count

Qualification Status

Number of Elements

Element Configuration

Power Dissipation

Case Connection

Input Type

Transistor Application

Polarity/Channel Type

Collector Emitter Voltage (VCEO)

Max Collector Current

Reverse Recovery Time

Collector Emitter Breakdown Voltage

Voltage - Collector Emitter Breakdown (Max)

Collector Emitter Saturation Voltage

Turn On Time

Test Condition

Vce(on) (Max) @ Vge, Ic

Turn Off Time-Nom (toff)

IGBT Type

Gate Charge

Current - Collector Pulsed (Icm)

Td (on/off) @ 25°C

Switching Energy

RoHS Status

Subcategory

JESD-30 Code

Power - Max

Gate-Emitter Voltage-Max

Gate-Emitter Thr Voltage-Max

Fall Time-Max (tf)

Radiation Hardening

Additional Feature

Reach Compliance Code

View Compare
IXGR24N120C3D1

IXYS

30 Weeks

Through Hole

Through Hole

ISOPLUS247™

3

SILICON

-55°C~150°C TJ

Tube

GenX3™

2008

e1

yes

Active

1 (Unlimited)

3

Tin/Silver/Copper (Sn/Ag/Cu)

200W

NOT SPECIFIED

NOT SPECIFIED

IXG*24N120

247

Not Qualified

1

Single

200W

ISOLATED

Standard

POWER CONTROL

N-CHANNEL

4.2V

48A

220 ns

1.2kV

1200V

3.6V

54 ns

600V, 20A, 5 Ω, 15V

4.2V @ 15V, 20A

430 ns

PT

79nC

96A

16ns/93ns

1.37mJ (on), 470μJ (off)

ROHS3 Compliant

-

-

-

-

-

-

-

-

-

-
IXGR6N170A

IXYS

30 Weeks

Through Hole

Through Hole

TO-247-3

247

SILICON

-55°C~150°C TJ

Tube

-

2010

-

-

Active

1 (Unlimited)

3

-

50W

-

-

-

3

-

1

Single

-

ISOLATED

Standard

POWER CONTROL

N-CHANNEL

1.7kV

5.5A

-

1.7kV

1700V

-

91 ns

850V, 6A, 33 Ω, 15V

7V @ 15V, 3A

271 ns

-

18.5nC

18A

46ns/220ns

590μJ (on), 180μJ (off)

ROHS3 Compliant

Insulated Gate BIP Transistors

R-PSFM-T3

50W

20V

5V

65ns

No

-

-

IXGR24N120C3D1 vs IXGR6N170A
IXGR40N120B2D1

IXYS

-

Through Hole

Through Hole

ISOPLUS247™

-

-

-

Tube

-

-

-

-

Active

1 (Unlimited)

-

-

-

-

-

IXG*40N120

-

-

-

-

-

-

Standard

-

-

-

-

-

1.2kV

1200V

-

-

-

-

-

-

-

-

-

-

ROHS3 Compliant

-

-

-

-

-

-

-

-

-

IXGR24N120C3D1 vs IXGR40N120B2D1
IXGR72N60A3H1

IXYS

8 Weeks

Through Hole

Through Hole

ISOPLUS247™

3

SILICON

-55°C~150°C TJ

Tube

GenX3™

2009

e1

yes

Active

1 (Unlimited)

3

TIN SILVER COPPER

200W

NOT SPECIFIED

NOT SPECIFIED

IXG*72N60

3

Not Qualified

1

Single

200W

ISOLATED

Standard

POWER CONTROL

N-CHANNEL

600V

75A

140 ns

600V

-

600V

63 ns

480V, 50A, 3 Ω, 15V

1.45V @ 15V, 60A

885 ns

PT

230nC

400A

31ns/320ns

1.4mJ (on), 3.5mJ (off)

ROHS3 Compliant

Insulated Gate BIP Transistors

-

-

20V

5V

-

-

LOW CONDUCTION LOSS

unknown

IXGR24N120C3D1 vs IXGR72N60A3H1