IXYS IXGR72N60B3H1

Name: IXGR72N60B3H1
Brand: IXYS
SKU: 3587347-IXGR72N60B3H1
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: IXGR72N60B3H1

Manufacturer:: IXYS

Ventron No:: 3587347-IXGR72N60B3H1

Description:: IGBT 600V 75A 200W ISOPLUS247

ECAD Model:

Datasheet:: IXGR72N60B3H1

Specifications

IXYS IXGR72N60B3H1 technical specifications, attributes, parameters and parts with similar specifications to IXYS IXGR72N60B3H1.

Factory Lead Time
8 Weeks
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
ISOPLUS247™
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tube
Series
GenX3™
Published
2016
JESD-609 Code
e1
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
Terminal Finish
Tin/Silver/Copper (Sn/Ag/Cu)
Additional Feature
LOW CONDUCTION LOSS
Subcategory
Insulated Gate BIP Transistors
Max Power Dissipation
200W
Terminal Position
SINGLE
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED
Base Part Number
IXG*72N60
Pin Count
3
JESD-30 Code
R-PSFM-T3
Qualification Status
Not Qualified
Number of Elements
1
Configuration
SINGLE WITH BUILT-IN DIODE
Case Connection
ISOLATED
Input Type
Standard
Turn On Delay Time
31 ns
Power - Max
200W
Transistor Application
POWER CONTROL
Polarity/Channel Type
N-CHANNEL
Turn-Off Delay Time
152 ns
Collector Emitter Voltage (VCEO)
1.8V
Max Collector Current
75A
Reverse Recovery Time
140 ns
Collector Emitter Breakdown Voltage
600V
Turn On Time
63 ns
Test Condition
480V, 50A, 3 Ω, 15V
Vce(on) (Max) @ Vge, Ic
1.8V @ 15V, 60A
Turn Off Time-Nom (toff)
370 ns
IGBT Type
PT
Gate Charge
225nC
Current - Collector Pulsed (Icm)
450A
Td (on/off) @ 25°C
31ns/152ns
Switching Energy
1.4mJ (on), 1mJ (off)
Gate-Emitter Voltage-Max
20V
Gate-Emitter Thr Voltage-Max
5V
Fall Time-Max (tf)
150ns
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free

Description

IXGR72N60B3H1 Overview
This product is manufactured by IXYS and belongs to the category of Transistors - IGBTs - Single. The images we provide are for reference only, for detailed product information please see specification sheet IXGR72N60B3H1 or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of IXGR72N60B3H1. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.

IXGR72N60B3H1 More Descriptions

Trans IGBT Chip N-CH 600V 80A 200000mW 3-Pin(3 Tab) ISOPLUS 247
IXGR Series 600 Vce 75 A 32 ns t(on) GenX3 IGBT w/Diode - ISOPLUS-247
IGBT 600V 75A 200W ISOPLUS247

Product Comparison

The three parts on the right have similar specifications to IXGR72N60B3H1.

Image

Part Number

Manufacturer

Factory Lead Time

Mount

Mounting Type

Package / Case

Transistor Element Material

Operating Temperature

Packaging

Series

Published

JESD-609 Code

Pbfree Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

Terminal Finish

Additional Feature

Subcategory

Max Power Dissipation

Terminal Position

Peak Reflow Temperature (Cel)

Time@Peak Reflow Temperature-Max (s)

Base Part Number

Pin Count

JESD-30 Code

Qualification Status

Number of Elements

Configuration

Case Connection

Input Type

Turn On Delay Time

Power - Max

Transistor Application

Polarity/Channel Type

Turn-Off Delay Time

Collector Emitter Voltage (VCEO)

Max Collector Current

Reverse Recovery Time

Collector Emitter Breakdown Voltage

Turn On Time

Test Condition

Vce(on) (Max) @ Vge, Ic

Turn Off Time-Nom (toff)

IGBT Type

Gate Charge

Current - Collector Pulsed (Icm)

Td (on/off) @ 25°C

Switching Energy

Gate-Emitter Voltage-Max

Gate-Emitter Thr Voltage-Max

Fall Time-Max (tf)

RoHS Status

Lead Free

Voltage - Collector Emitter Breakdown (Max)

Number of Pins

Reach Compliance Code

Element Configuration

View Compare
IXGR72N60B3H1

IXYS

8 Weeks

Through Hole

Through Hole

ISOPLUS247™

SILICON

-55°C~150°C TJ

Tube

GenX3™

2016

e1

yes

Active

1 (Unlimited)

3

Tin/Silver/Copper (Sn/Ag/Cu)

LOW CONDUCTION LOSS

Insulated Gate BIP Transistors

200W

SINGLE

NOT SPECIFIED

NOT SPECIFIED

IXG*72N60

3

R-PSFM-T3

Not Qualified

1

SINGLE WITH BUILT-IN DIODE

ISOLATED

Standard

31 ns

200W

POWER CONTROL

N-CHANNEL

152 ns

1.8V

75A

140 ns

600V

63 ns

480V, 50A, 3 Ω, 15V

1.8V @ 15V, 60A

370 ns

PT

225nC

450A

31ns/152ns

1.4mJ (on), 1mJ (off)

20V

5V

150ns

ROHS3 Compliant

Lead Free

-

-

-

-

-
IXGR40N120A2D1

IXYS

8 Weeks

Through Hole

Through Hole

ISOPLUS247™

-

-

Tube

-

-

-

-

Active

1 (Unlimited)

-

-

-

-

-

-

-

-

IXG*40N120

-

-

-

-

-

-

Standard

-

-

-

-

-

-

-

-

1.2kV

-

-

-

-

-

-

-

-

-

-

-

-

ROHS3 Compliant

-

1200V

-

-

-

IXGR72N60B3H1 vs IXGR40N120A2D1
IXGR40N120B2D1

IXYS

-

Through Hole

Through Hole

ISOPLUS247™

-

-

Tube

-

-

-

-

Active

1 (Unlimited)

-

-

-

-

-

-

-

-

IXG*40N120

-

-

-

-

-

-

Standard

-

-

-

-

-

-

-

-

1.2kV

-

-

-

-

-

-

-

-

-

-

-

-

ROHS3 Compliant

-

1200V

-

-

-

IXGR72N60B3H1 vs IXGR40N120B2D1
IXGR35N120BD1

IXYS

8 Weeks

Through Hole

Through Hole

ISOPLUS247™

SILICON

-55°C~150°C TJ

Tube

-

2004

e1

yes

Active

1 (Unlimited)

3

Tin/Silver/Copper (Sn/Ag/Cu)

-

-

250W

-

NOT SPECIFIED

NOT SPECIFIED

IXG*35N120

3

R-PSIP-T3

Not Qualified

1

-

ISOLATED

Standard

-

250W

POWER CONTROL

N-CHANNEL

-

1.2kV

54A

40 ns

1.2kV

105 ns

960V, 35A, 3 Ω, 15V

3.5V @ 15V, 35A

780 ns

-

140nC

200A

40ns/270ns

900μJ (on), 3.8mJ (off)

-

-

-

ROHS3 Compliant

Lead Free

1200V

247

unknown

Single

IXGR72N60B3H1 vs IXGR35N120BD1