Home > Products > Discrete Semiconductor Products > Transistors - IGBTs - Single > IXGR48N60C3D1
IXGR48N60C3D1

IXYS IXGR48N60C3D1

Part Number:
IXGR48N60C3D1
Manufacturer:
IXYS
Ventron No:
2494608-IXGR48N60C3D1
Description:
IGBT 600V 56A 125W ISOPLUS247
ECAD Model:
Datasheet:
IXGR48N60C3D1

Quick Request Quote

Please send RFQ , We will respond immediately.

Part Number
Quantity
Company
E-mail
Phone
Comments
Specifications
IXYS IXGR48N60C3D1 technical specifications, attributes, parameters and parts with similar specifications to IXYS IXGR48N60C3D1.
  • Factory Lead Time
    30 Weeks
  • Mount
    Through Hole
  • Mounting Type
    Through Hole
  • Package / Case
    ISOPLUS247™
  • Number of Pins
    3
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Tube
  • Series
    GenX3™
  • Published
    2009
  • JESD-609 Code
    e1
  • Pbfree Code
    yes
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    3
  • Terminal Finish
    TIN SILVER COPPER
  • Additional Feature
    UL RECOGNIZED
  • Subcategory
    Insulated Gate BIP Transistors
  • Max Power Dissipation
    125W
  • Peak Reflow Temperature (Cel)
    NOT SPECIFIED
  • Reach Compliance Code
    unknown
  • Time@Peak Reflow Temperature-Max (s)
    NOT SPECIFIED
  • Base Part Number
    IXG*48N60
  • Pin Count
    3
  • Qualification Status
    Not Qualified
  • Number of Elements
    1
  • Element Configuration
    Single
  • Case Connection
    ISOLATED
  • Input Type
    Standard
  • Power - Max
    125W
  • Transistor Application
    POWER CONTROL
  • Polarity/Channel Type
    N-CHANNEL
  • Collector Emitter Voltage (VCEO)
    2.7V
  • Max Collector Current
    56A
  • Reverse Recovery Time
    25 ns
  • Collector Emitter Breakdown Voltage
    600V
  • Turn On Time
    45 ns
  • Test Condition
    400V, 30A, 3 Ω, 15V
  • Vce(on) (Max) @ Vge, Ic
    2.7V @ 15V, 30A
  • Turn Off Time-Nom (toff)
    187 ns
  • IGBT Type
    PT
  • Gate Charge
    77nC
  • Current - Collector Pulsed (Icm)
    230A
  • Td (on/off) @ 25°C
    19ns/60ns
  • Switching Energy
    410μJ (on), 230μJ (off)
  • Gate-Emitter Voltage-Max
    20V
  • Gate-Emitter Thr Voltage-Max
    5.5V
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Lead Free
Description
IXGR48N60C3D1 Overview
This product is manufactured by IXYS and belongs to the category of Transistors - IGBTs - Single. The images we provide are for reference only, for detailed product information please see specification sheet IXGR48N60C3D1 or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of IXGR48N60C3D1. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
IXGR48N60C3D1 More Descriptions
Trans IGBT Chip N-CH 600V 56A 125000mW 3-Pin(3 Tab) ISOPLUS 247
Transistor, Igbt, 600V, 56A, Isoplus 247 Rohs Compliant: Yes |Ixys Semiconductor IXGR48N60C3D1
Transistor, IGBT, 600V, 56A, ISOPLUS 247;
600V, 56A, ISOPLUS 247 Package
Product Comparison
The three parts on the right have similar specifications to IXGR48N60C3D1.
  • Image
    Part Number
    Manufacturer
    Factory Lead Time
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Transistor Element Material
    Operating Temperature
    Packaging
    Series
    Published
    JESD-609 Code
    Pbfree Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    Terminal Finish
    Additional Feature
    Subcategory
    Max Power Dissipation
    Peak Reflow Temperature (Cel)
    Reach Compliance Code
    Time@Peak Reflow Temperature-Max (s)
    Base Part Number
    Pin Count
    Qualification Status
    Number of Elements
    Element Configuration
    Case Connection
    Input Type
    Power - Max
    Transistor Application
    Polarity/Channel Type
    Collector Emitter Voltage (VCEO)
    Max Collector Current
    Reverse Recovery Time
    Collector Emitter Breakdown Voltage
    Turn On Time
    Test Condition
    Vce(on) (Max) @ Vge, Ic
    Turn Off Time-Nom (toff)
    IGBT Type
    Gate Charge
    Current - Collector Pulsed (Icm)
    Td (on/off) @ 25°C
    Switching Energy
    Gate-Emitter Voltage-Max
    Gate-Emitter Thr Voltage-Max
    RoHS Status
    Lead Free
    Voltage - Collector Emitter Breakdown (Max)
    JESD-30 Code
    Power Dissipation
    Collector Emitter Saturation Voltage
    View Compare
  • IXGR48N60C3D1
    IXGR48N60C3D1
    IXYS
    30 Weeks
    Through Hole
    Through Hole
    ISOPLUS247™
    3
    SILICON
    -55°C~150°C TJ
    Tube
    GenX3™
    2009
    e1
    yes
    Active
    1 (Unlimited)
    3
    TIN SILVER COPPER
    UL RECOGNIZED
    Insulated Gate BIP Transistors
    125W
    NOT SPECIFIED
    unknown
    NOT SPECIFIED
    IXG*48N60
    3
    Not Qualified
    1
    Single
    ISOLATED
    Standard
    125W
    POWER CONTROL
    N-CHANNEL
    2.7V
    56A
    25 ns
    600V
    45 ns
    400V, 30A, 3 Ω, 15V
    2.7V @ 15V, 30A
    187 ns
    PT
    77nC
    230A
    19ns/60ns
    410μJ (on), 230μJ (off)
    20V
    5.5V
    ROHS3 Compliant
    Lead Free
    -
    -
    -
    -
    -
  • IXGR40N120A2D1
    IXGR40N120A2D1
    IXYS
    8 Weeks
    Through Hole
    Through Hole
    ISOPLUS247™
    -
    -
    -
    Tube
    -
    -
    -
    -
    Active
    1 (Unlimited)
    -
    -
    -
    -
    -
    -
    -
    -
    IXG*40N120
    -
    -
    -
    -
    -
    Standard
    -
    -
    -
    -
    -
    -
    1.2kV
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    ROHS3 Compliant
    -
    1200V
    -
    -
    -
    IXGR48N60C3D1 vs IXGR40N120A2D1
  • IXGR35N120BD1
    IXGR35N120BD1
    IXYS
    8 Weeks
    Through Hole
    Through Hole
    ISOPLUS247™
    247
    SILICON
    -55°C~150°C TJ
    Tube
    -
    2004
    e1
    yes
    Active
    1 (Unlimited)
    3
    Tin/Silver/Copper (Sn/Ag/Cu)
    -
    -
    250W
    NOT SPECIFIED
    unknown
    NOT SPECIFIED
    IXG*35N120
    3
    Not Qualified
    1
    Single
    ISOLATED
    Standard
    250W
    POWER CONTROL
    N-CHANNEL
    1.2kV
    54A
    40 ns
    1.2kV
    105 ns
    960V, 35A, 3 Ω, 15V
    3.5V @ 15V, 35A
    780 ns
    -
    140nC
    200A
    40ns/270ns
    900μJ (on), 3.8mJ (off)
    -
    -
    ROHS3 Compliant
    Lead Free
    1200V
    R-PSIP-T3
    -
    -
    IXGR48N60C3D1 vs IXGR35N120BD1
  • IXGR72N60A3H1
    IXGR72N60A3H1
    IXYS
    8 Weeks
    Through Hole
    Through Hole
    ISOPLUS247™
    3
    SILICON
    -55°C~150°C TJ
    Tube
    GenX3™
    2009
    e1
    yes
    Active
    1 (Unlimited)
    3
    TIN SILVER COPPER
    LOW CONDUCTION LOSS
    Insulated Gate BIP Transistors
    200W
    NOT SPECIFIED
    unknown
    NOT SPECIFIED
    IXG*72N60
    3
    Not Qualified
    1
    Single
    ISOLATED
    Standard
    -
    POWER CONTROL
    N-CHANNEL
    600V
    75A
    140 ns
    600V
    63 ns
    480V, 50A, 3 Ω, 15V
    1.45V @ 15V, 60A
    885 ns
    PT
    230nC
    400A
    31ns/320ns
    1.4mJ (on), 3.5mJ (off)
    20V
    5V
    ROHS3 Compliant
    -
    -
    -
    200W
    600V
    IXGR48N60C3D1 vs IXGR72N60A3H1
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS
Related parts for IXGR48N60C3D1
Popular Search Part Number Related Keywords Search Tags

Latest News

  • cost

    Help you to save your cost and time.

  • package

    Reliable package for your goods.

  • fast

    Fast Reliable Delivery to save time.

  • service

    Quality premium after-sale service.