IXYS IXGP30N60C3C1

Name: IXGP30N60C3C1
Brand: IXYS
SKU: 3554870-IXGP30N60C3C1
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: IXGP30N60C3C1

Manufacturer:: IXYS

Ventron No:: 3554870-IXGP30N60C3C1

Description:: IGBT 600V 60A 220W TO220

ECAD Model:

Datasheet:: IXGP30N60C3C1

Specifications

IXYS IXGP30N60C3C1 technical specifications, attributes, parameters and parts with similar specifications to IXYS IXGP30N60C3C1.

Factory Lead Time
26 Weeks
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-220-3
Number of Pins
3
Weight
2.299997g
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tube
Series
GenX3™
Published
2009
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
PURE TIN
Subcategory
Insulated Gate BIP Transistors
Max Power Dissipation
220W
Terminal Position
SINGLE
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Reach Compliance Code
unknown
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED
Base Part Number
IXG*30N60
Pin Count
3
Qualification Status
Not Qualified
Number of Elements
1
Configuration
SINGLE WITH BUILT-IN DIODE
Case Connection
COLLECTOR
Input Type
Standard
Power - Max
220W
Transistor Application
POWER CONTROL
Polarity/Channel Type
N-CHANNEL
Collector Emitter Voltage (VCEO)
3V
Max Collector Current
60A
JEDEC-95 Code
TO-220AB
Collector Emitter Breakdown Voltage
600V
Collector Emitter Saturation Voltage
3V
Turn On Time
37 ns
Test Condition
300V, 20A, 5 Ω, 15V
Vce(on) (Max) @ Vge, Ic
3V @ 15V, 20A
Turn Off Time-Nom (toff)
160 ns
IGBT Type
PT
Gate Charge
38nC
Current - Collector Pulsed (Icm)
150A
Td (on/off) @ 25°C
17ns/42ns
Switching Energy
120μJ (on), 90μJ (off)
Gate-Emitter Voltage-Max
20V
Gate-Emitter Thr Voltage-Max
5.5V
REACH SVHC
No SVHC
RoHS Status
ROHS3 Compliant

Description

IXGP30N60C3C1 Overview
This product is manufactured by IXYS and belongs to the category of Transistors - IGBTs - Single. The images we provide are for reference only, for detailed product information please see specification sheet IXGP30N60C3C1 or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of IXGP30N60C3C1. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.

IXGP30N60C3C1 More Descriptions

GENX3 SIC IGBT, 600V, 60A, TO-220AB
IXYS SEMICONDUCTOR IXGP30N60C3C1IGBT Single Transistor, SIC, 60 A, 3 V, 220 W, 600 V, TO-220AB, 3 Pins
IGBT,600V,30A,TO-220; DC Collector Current: 60A; Collector Emitter Saturation Voltage Vce(on): 3V; Power Dissipation Pd: 220W; Collector Emitter Voltage V(br)ceo: 600V; Transistor Case Style: TO-220AB; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: -; SVHC: No SVHC (12-Jan-2017); Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to 150°C; Power Dissipation Max: 220W; Transistor Type: IGBT

Product Comparison

The three parts on the right have similar specifications to IXGP30N60C3C1.

Image

Part Number

Manufacturer

Factory Lead Time

Mount

Mounting Type

Package / Case

Number of Pins

Weight

Transistor Element Material

Operating Temperature

Packaging

Series

Published

JESD-609 Code

Pbfree Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

ECCN Code

Terminal Finish

Subcategory

Max Power Dissipation

Terminal Position

Peak Reflow Temperature (Cel)

Reach Compliance Code

Time@Peak Reflow Temperature-Max (s)

Base Part Number

Pin Count

Qualification Status

Number of Elements

Configuration

Case Connection

Input Type

Power - Max

Transistor Application

Polarity/Channel Type

Collector Emitter Voltage (VCEO)

Max Collector Current

JEDEC-95 Code

Collector Emitter Breakdown Voltage

Collector Emitter Saturation Voltage

Turn On Time

Test Condition

Vce(on) (Max) @ Vge, Ic

Turn Off Time-Nom (toff)

IGBT Type

Gate Charge

Current - Collector Pulsed (Icm)

Td (on/off) @ 25°C

Switching Energy

Gate-Emitter Voltage-Max

Gate-Emitter Thr Voltage-Max

REACH SVHC

RoHS Status

Element Configuration

Voltage - Collector Emitter Breakdown (Max)

Additional Feature

JESD-30 Code

Power Dissipation

Turn On Delay Time

Turn-Off Delay Time

Lead Free

View Compare
IXGP30N60C3C1

IXYS

26 Weeks

Through Hole

Through Hole

TO-220-3

3

2.299997g

SILICON

-55°C~150°C TJ

Tube

GenX3™

2009

e3

yes

Active

1 (Unlimited)

3

EAR99

PURE TIN

Insulated Gate BIP Transistors

220W

SINGLE

NOT SPECIFIED

unknown

NOT SPECIFIED

IXG*30N60

3

Not Qualified

1

SINGLE WITH BUILT-IN DIODE

COLLECTOR

Standard

220W

POWER CONTROL

N-CHANNEL

3V

60A

TO-220AB

600V

3V

37 ns

300V, 20A, 5 Ω, 15V

3V @ 15V, 20A

160 ns

PT

38nC

150A

17ns/42ns

120μJ (on), 90μJ (off)

20V

5.5V

No SVHC

ROHS3 Compliant

-

-

-

-

-

-

-

-

-
IXGP12N120A2

IXYS

16 Weeks

Through Hole

Through Hole

TO-220-3

3

2.299997g

SILICON

-55°C~150°C TJ

Tube

-

2004

-

yes

Active

1 (Unlimited)

3

-

-

-

75W

-

NOT SPECIFIED

-

NOT SPECIFIED

IXG*12N120

3

Not Qualified

1

-

COLLECTOR

Standard

75W

POWER CONTROL

N-CHANNEL

1.2kV

24A

TO-220AB

1.2kV

-

45 ns

960V, 12A, 100 Ω, 15V

3V @ 15V, 12A

1750 ns

PT

24nC

48A

15ns/680ns

5.4mJ (off)

-

-

-

ROHS3 Compliant

Single

1200V

-

-

-

-

-

-

IXGP30N60C3C1 vs IXGP12N120A2
IXGP12N120A3

IXYS

30 Weeks

Through Hole

Through Hole

TO-220-3

-

-

SILICON

-55°C~150°C TJ

Tube

GenX3™

2010

-

-

Active

1 (Unlimited)

3

-

-

Insulated Gate BIP Transistors

100W

SINGLE

-

unknown

-

-

3

-

1

SINGLE

COLLECTOR

Standard

100W

POWER CONTROL

N-CHANNEL

3V

22A

TO-220AB

1.2kV

-

202 ns

-

3V @ 15V, 12A

1545 ns

PT

20.4nC

60A

-

-

20V

5V

-

ROHS3 Compliant

-

1200V

LOW CONDUCTION LOSS

R-PSFM-T3

-

-

-

-

IXGP30N60C3C1 vs IXGP12N120A3
IXGP20N120A3

IXYS

26 Weeks

Through Hole

Through Hole

TO-220-3

3

2.299997g

SILICON

-55°C~150°C TJ

Tube

GenX3™

2009

-

yes

Active

1 (Unlimited)

3

EAR99

-

Insulated Gate BIP Transistors

180W

-

NOT SPECIFIED

-

NOT SPECIFIED

IXG*20N120

3

Not Qualified

1

-

COLLECTOR

Standard

-

POWER CONTROL

N-CHANNEL

1.2kV

40A

TO-220AB

1.2kV

2.3V

66 ns

960V, 20A, 10 Ω, 15V

2.5V @ 15V, 20A

1530 ns

PT

50nC

120A

16ns/290ns

2.85mJ (on), 6.47mJ (off)

20V

5V

No SVHC

ROHS3 Compliant

Single

1200V

LOW CONDUCTION LOSS

-

180W

16 ns

290 ns

Lead Free

IXGP30N60C3C1 vs IXGP20N120A3