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IXGP12N100AU1

IXYS IXGP12N100AU1

Part Number:
IXGP12N100AU1
Manufacturer:
IXYS
Ventron No:
2497116-IXGP12N100AU1
Description:
IGBT 1000V 24A 100W TO220AB
ECAD Model:
Datasheet:
IXGP12N100AU1

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Specifications
IXYS IXGP12N100AU1 technical specifications, attributes, parameters and parts with similar specifications to IXYS IXGP12N100AU1.
  • Factory Lead Time
    8 Weeks
  • Mount
    Through Hole
  • Mounting Type
    Through Hole
  • Package / Case
    TO-220-3
  • Number of Pins
    3
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Tube
  • Published
    2000
  • Pbfree Code
    yes
  • Part Status
    Obsolete
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    3
  • Additional Feature
    HIGH SPEED, FAST
  • Subcategory
    Insulated Gate BIP Transistors
  • Max Power Dissipation
    100W
  • Base Part Number
    IXG*12N100
  • Pin Count
    3
  • Number of Elements
    1
  • Element Configuration
    Single
  • Case Connection
    COLLECTOR
  • Input Type
    Standard
  • Power - Max
    100W
  • Transistor Application
    POWER CONTROL
  • Polarity/Channel Type
    N-CHANNEL
  • Collector Emitter Voltage (VCEO)
    1kV
  • Max Collector Current
    24A
  • Reverse Recovery Time
    60ns
  • JEDEC-95 Code
    TO-220AB
  • Collector Emitter Breakdown Voltage
    1kV
  • Voltage - Collector Emitter Breakdown (Max)
    1000V
  • Turn On Time
    100 ns
  • Test Condition
    800V, 12A, 120 Ω, 15V
  • Vce(on) (Max) @ Vge, Ic
    4V @ 15V, 12A
  • Turn Off Time-Nom (toff)
    900 ns
  • Gate Charge
    65nC
  • Current - Collector Pulsed (Icm)
    48A
  • Td (on/off) @ 25°C
    100ns/850ns
  • Switching Energy
    4mJ (off)
  • Gate-Emitter Voltage-Max
    20V
  • Gate-Emitter Thr Voltage-Max
    5.5V
  • Fall Time-Max (tf)
    700ns
  • Radiation Hardening
    No
  • RoHS Status
    RoHS Compliant
Description
IXGP12N100AU1 Overview
This product is manufactured by IXYS and belongs to the category of Transistors - IGBTs - Single. The images we provide are for reference only, for detailed product information please see specification sheet IXGP12N100AU1 or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of IXGP12N100AU1. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
IXGP12N100AU1 More Descriptions
Trans IGBT Chip N-CH 1000V 24A 100000mW 3-Pin(3 Tab) TO-220AB
IGBT 1000V 24A 100W TO220AB
Contact for details
Product Comparison
The three parts on the right have similar specifications to IXGP12N100AU1.
  • Image
    Part Number
    Manufacturer
    Factory Lead Time
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Transistor Element Material
    Operating Temperature
    Packaging
    Published
    Pbfree Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    Additional Feature
    Subcategory
    Max Power Dissipation
    Base Part Number
    Pin Count
    Number of Elements
    Element Configuration
    Case Connection
    Input Type
    Power - Max
    Transistor Application
    Polarity/Channel Type
    Collector Emitter Voltage (VCEO)
    Max Collector Current
    Reverse Recovery Time
    JEDEC-95 Code
    Collector Emitter Breakdown Voltage
    Voltage - Collector Emitter Breakdown (Max)
    Turn On Time
    Test Condition
    Vce(on) (Max) @ Vge, Ic
    Turn Off Time-Nom (toff)
    Gate Charge
    Current - Collector Pulsed (Icm)
    Td (on/off) @ 25°C
    Switching Energy
    Gate-Emitter Voltage-Max
    Gate-Emitter Thr Voltage-Max
    Fall Time-Max (tf)
    Radiation Hardening
    RoHS Status
    Weight
    Peak Reflow Temperature (Cel)
    Reach Compliance Code
    Time@Peak Reflow Temperature-Max (s)
    Qualification Status
    Turn On Delay Time
    Turn-Off Delay Time
    Collector Emitter Saturation Voltage
    IGBT Type
    Lead Free
    Series
    Terminal Position
    JESD-30 Code
    Configuration
    View Compare
  • IXGP12N100AU1
    IXGP12N100AU1
    IXYS
    8 Weeks
    Through Hole
    Through Hole
    TO-220-3
    3
    SILICON
    -55°C~150°C TJ
    Tube
    2000
    yes
    Obsolete
    1 (Unlimited)
    3
    HIGH SPEED, FAST
    Insulated Gate BIP Transistors
    100W
    IXG*12N100
    3
    1
    Single
    COLLECTOR
    Standard
    100W
    POWER CONTROL
    N-CHANNEL
    1kV
    24A
    60ns
    TO-220AB
    1kV
    1000V
    100 ns
    800V, 12A, 120 Ω, 15V
    4V @ 15V, 12A
    900 ns
    65nC
    48A
    100ns/850ns
    4mJ (off)
    20V
    5.5V
    700ns
    No
    RoHS Compliant
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • IXGP8N100
    IXGP8N100
    IXYS
    -
    Through Hole
    Through Hole
    TO-220-3
    3
    SILICON
    -55°C~150°C TJ
    Tube
    2004
    yes
    Obsolete
    1 (Unlimited)
    3
    LOW SATURATION VOLTAGE
    Insulated Gate BIP Transistors
    54W
    -
    3
    1
    Single
    -
    Standard
    54W
    POWER CONTROL
    N-CHANNEL
    1kV
    16A
    -
    TO-220AB
    1kV
    1000V
    15 ns
    800V, 8A, 120 Ω, 15V
    2.7V @ 15V, 8A
    900 ns
    26.5nC
    32A
    15ns/600ns
    2.3mJ (off)
    20V
    5.5V
    -
    -
    RoHS Compliant
    2.299997g
    NOT SPECIFIED
    unknown
    NOT SPECIFIED
    Not Qualified
    15 ns
    600 ns
    3V
    PT
    Lead Free
    -
    -
    -
    -
    IXGP12N100AU1 vs IXGP8N100
  • IXGP12N120A2
    IXGP12N120A2
    IXYS
    16 Weeks
    Through Hole
    Through Hole
    TO-220-3
    3
    SILICON
    -55°C~150°C TJ
    Tube
    2004
    yes
    Active
    1 (Unlimited)
    3
    -
    -
    75W
    IXG*12N120
    3
    1
    Single
    COLLECTOR
    Standard
    75W
    POWER CONTROL
    N-CHANNEL
    1.2kV
    24A
    -
    TO-220AB
    1.2kV
    1200V
    45 ns
    960V, 12A, 100 Ω, 15V
    3V @ 15V, 12A
    1750 ns
    24nC
    48A
    15ns/680ns
    5.4mJ (off)
    -
    -
    -
    -
    ROHS3 Compliant
    2.299997g
    NOT SPECIFIED
    -
    NOT SPECIFIED
    Not Qualified
    -
    -
    -
    PT
    -
    -
    -
    -
    -
    IXGP12N100AU1 vs IXGP12N120A2
  • IXGP12N120A3
    IXGP12N120A3
    IXYS
    30 Weeks
    Through Hole
    Through Hole
    TO-220-3
    -
    SILICON
    -55°C~150°C TJ
    Tube
    2010
    -
    Active
    1 (Unlimited)
    3
    LOW CONDUCTION LOSS
    Insulated Gate BIP Transistors
    100W
    -
    3
    1
    -
    COLLECTOR
    Standard
    100W
    POWER CONTROL
    N-CHANNEL
    3V
    22A
    -
    TO-220AB
    1.2kV
    1200V
    202 ns
    -
    3V @ 15V, 12A
    1545 ns
    20.4nC
    60A
    -
    -
    20V
    5V
    -
    -
    ROHS3 Compliant
    -
    -
    unknown
    -
    -
    -
    -
    -
    PT
    -
    GenX3™
    SINGLE
    R-PSFM-T3
    SINGLE
    IXGP12N100AU1 vs IXGP12N120A3
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS
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