IXYS IXGP15N120C
- Part Number:
- IXGP15N120C
- Manufacturer:
- IXYS
- Ventron No:
- 2496683-IXGP15N120C
- Description:
- IGBT 1200V 30A 200W TO220AB
- Datasheet:
- IXGP15N120C
IXYS IXGP15N120C technical specifications, attributes, parameters and parts with similar specifications to IXYS IXGP15N120C.
- MountThrough Hole
- Mounting TypeThrough Hole
- Package / CaseTO-220-3
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTube
- SeriesLightspeed™
- Published2004
- JESD-609 Codee0
- Pbfree Codeno
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- Terminal FinishTin/Lead (Sn/Pb)
- SubcategoryInsulated Gate BIP Transistors
- Max Power Dissipation200W
- Terminal PositionSINGLE
- Peak Reflow Temperature (Cel)NOT SPECIFIED
- Time@Peak Reflow Temperature-Max (s)NOT SPECIFIED
- Base Part NumberIXG*15N120
- Pin Count3
- JESD-30 CodeR-PSFM-T3
- Qualification StatusNot Qualified
- Number of Elements1
- ConfigurationSINGLE
- Case ConnectionCOLLECTOR
- Input TypeStandard
- Power - Max200W
- Transistor ApplicationMOTOR CONTROL
- Polarity/Channel TypeN-CHANNEL
- Collector Emitter Voltage (VCEO)3.8V
- Max Collector Current30A
- JEDEC-95 CodeTO-220AB
- Collector Emitter Breakdown Voltage1.2kV
- Voltage - Collector Emitter Breakdown (Max)1200V
- Turn On Time43 ns
- Test Condition960V, 15A, 10 Ω, 15V
- Vce(on) (Max) @ Vge, Ic3.8V @ 15V, 15A
- Turn Off Time-Nom (toff)470 ns
- Gate Charge86nC
- Current - Collector Pulsed (Icm)60A
- Td (on/off) @ 25°C25ns/150ns
- Switching Energy1.05mJ (off)
- Gate-Emitter Voltage-Max20V
- Gate-Emitter Thr Voltage-Max5V
- Fall Time-Max (tf)190ns
- RoHS StatusRoHS Compliant
IXGP15N120C Overview
This product is manufactured by IXYS and belongs to the category of Transistors - IGBTs - Single. The images we provide are for reference only, for detailed product information please see specification sheet IXGP15N120C or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of IXGP15N120C. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
This product is manufactured by IXYS and belongs to the category of Transistors - IGBTs - Single. The images we provide are for reference only, for detailed product information please see specification sheet IXGP15N120C or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of IXGP15N120C. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
IXGP15N120C More Descriptions
IGBT 1200V 30A 200W TO220AB
The three parts on the right have similar specifications to IXGP15N120C.
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ImagePart NumberManufacturerMountMounting TypePackage / CaseTransistor Element MaterialOperating TemperaturePackagingSeriesPublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsTerminal FinishSubcategoryMax Power DissipationTerminal PositionPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)Base Part NumberPin CountJESD-30 CodeQualification StatusNumber of ElementsConfigurationCase ConnectionInput TypePower - MaxTransistor ApplicationPolarity/Channel TypeCollector Emitter Voltage (VCEO)Max Collector CurrentJEDEC-95 CodeCollector Emitter Breakdown VoltageVoltage - Collector Emitter Breakdown (Max)Turn On TimeTest ConditionVce(on) (Max) @ Vge, IcTurn Off Time-Nom (toff)Gate ChargeCurrent - Collector Pulsed (Icm)Td (on/off) @ 25°CSwitching EnergyGate-Emitter Voltage-MaxGate-Emitter Thr Voltage-MaxFall Time-Max (tf)RoHS StatusFactory Lead TimeNumber of PinsWeightElement ConfigurationIGBT TypeAdditional FeatureReach Compliance CodeECCN CodePower DissipationTurn On Delay TimeTurn-Off Delay TimeCollector Emitter Saturation VoltageREACH SVHCLead FreeView Compare
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IXGP15N120CThrough HoleThrough HoleTO-220-3SILICON-55°C~150°C TJTubeLightspeed™2004e0noObsolete1 (Unlimited)3Tin/Lead (Sn/Pb)Insulated Gate BIP Transistors200WSINGLENOT SPECIFIEDNOT SPECIFIEDIXG*15N1203R-PSFM-T3Not Qualified1SINGLECOLLECTORStandard200WMOTOR CONTROLN-CHANNEL3.8V30ATO-220AB1.2kV1200V43 ns960V, 15A, 10 Ω, 15V3.8V @ 15V, 15A470 ns86nC60A25ns/150ns1.05mJ (off)20V5V190nsRoHS Compliant---------------
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Through HoleThrough HoleTO-220-3SILICON-55°C~150°C TJTube-2004-yesActive1 (Unlimited)3--75W-NOT SPECIFIEDNOT SPECIFIEDIXG*12N1203-Not Qualified1-COLLECTORStandard75WPOWER CONTROLN-CHANNEL1.2kV24ATO-220AB1.2kV1200V45 ns960V, 12A, 100 Ω, 15V3V @ 15V, 12A1750 ns24nC48A15ns/680ns5.4mJ (off)---ROHS3 Compliant16 Weeks32.299997gSinglePT---------
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Through HoleThrough HoleTO-220-3SILICON-55°C~150°C TJTubeGenX3™2010--Active1 (Unlimited)3-Insulated Gate BIP Transistors100WSINGLE---3R-PSFM-T3-1SINGLECOLLECTORStandard100WPOWER CONTROLN-CHANNEL3V22ATO-220AB1.2kV1200V202 ns-3V @ 15V, 12A1545 ns20.4nC60A--20V5V-ROHS3 Compliant30 Weeks---PTLOW CONDUCTION LOSSunknown-------
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Through HoleThrough HoleTO-220-3SILICON-55°C~150°C TJTubeGenX3™2009-yesActive1 (Unlimited)3-Insulated Gate BIP Transistors180W-NOT SPECIFIEDNOT SPECIFIEDIXG*20N1203-Not Qualified1-COLLECTORStandard-POWER CONTROLN-CHANNEL1.2kV40ATO-220AB1.2kV1200V66 ns960V, 20A, 10 Ω, 15V2.5V @ 15V, 20A1530 ns50nC120A16ns/290ns2.85mJ (on), 6.47mJ (off)20V5V-ROHS3 Compliant26 Weeks32.299997gSinglePTLOW CONDUCTION LOSS-EAR99180W16 ns290 ns2.3VNo SVHCLead Free
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