IXGP12N120A2

IXYS IXGP12N120A2

Part Number:
IXGP12N120A2
Manufacturer:
IXYS
Ventron No:
3554943-IXGP12N120A2
Description:
IGBT 1200V 24A 75W TO220
ECAD Model:
Datasheet:
IXGP12N120A2

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Specifications
IXYS IXGP12N120A2 technical specifications, attributes, parameters and parts with similar specifications to IXYS IXGP12N120A2.
  • Factory Lead Time
    16 Weeks
  • Mount
    Through Hole
  • Mounting Type
    Through Hole
  • Package / Case
    TO-220-3
  • Number of Pins
    3
  • Weight
    2.299997g
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Tube
  • Published
    2004
  • Pbfree Code
    yes
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    3
  • Max Power Dissipation
    75W
  • Peak Reflow Temperature (Cel)
    NOT SPECIFIED
  • Time@Peak Reflow Temperature-Max (s)
    NOT SPECIFIED
  • Base Part Number
    IXG*12N120
  • Pin Count
    3
  • Qualification Status
    Not Qualified
  • Number of Elements
    1
  • Element Configuration
    Single
  • Case Connection
    COLLECTOR
  • Input Type
    Standard
  • Power - Max
    75W
  • Transistor Application
    POWER CONTROL
  • Polarity/Channel Type
    N-CHANNEL
  • Collector Emitter Voltage (VCEO)
    1.2kV
  • Max Collector Current
    24A
  • JEDEC-95 Code
    TO-220AB
  • Collector Emitter Breakdown Voltage
    1.2kV
  • Voltage - Collector Emitter Breakdown (Max)
    1200V
  • Turn On Time
    45 ns
  • Test Condition
    960V, 12A, 100 Ω, 15V
  • Vce(on) (Max) @ Vge, Ic
    3V @ 15V, 12A
  • Turn Off Time-Nom (toff)
    1750 ns
  • IGBT Type
    PT
  • Gate Charge
    24nC
  • Current - Collector Pulsed (Icm)
    48A
  • Td (on/off) @ 25°C
    15ns/680ns
  • Switching Energy
    5.4mJ (off)
  • RoHS Status
    ROHS3 Compliant
Description
IXGP12N120A2 Overview
This product is manufactured by IXYS and belongs to the category of Transistors - IGBTs - Single. The images we provide are for reference only, for detailed product information please see specification sheet IXGP12N120A2 or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of IXGP12N120A2. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
IXGP12N120A2 More Descriptions
Trans IGBT Chip N-CH 1.2KV 24A 3-Pin(3 Tab) TO-220AB
IGBT 1200V 24A 75W TO220
IGBT 1200V 24A TO-220
Contact for details
Product Comparison
The three parts on the right have similar specifications to IXGP12N120A2.
  • Image
    Part Number
    Manufacturer
    Factory Lead Time
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Weight
    Transistor Element Material
    Operating Temperature
    Packaging
    Published
    Pbfree Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    Max Power Dissipation
    Peak Reflow Temperature (Cel)
    Time@Peak Reflow Temperature-Max (s)
    Base Part Number
    Pin Count
    Qualification Status
    Number of Elements
    Element Configuration
    Case Connection
    Input Type
    Power - Max
    Transistor Application
    Polarity/Channel Type
    Collector Emitter Voltage (VCEO)
    Max Collector Current
    JEDEC-95 Code
    Collector Emitter Breakdown Voltage
    Voltage - Collector Emitter Breakdown (Max)
    Turn On Time
    Test Condition
    Vce(on) (Max) @ Vge, Ic
    Turn Off Time-Nom (toff)
    IGBT Type
    Gate Charge
    Current - Collector Pulsed (Icm)
    Td (on/off) @ 25°C
    Switching Energy
    RoHS Status
    Series
    ECCN Code
    Additional Feature
    Subcategory
    Power Dissipation
    Turn On Delay Time
    Turn-Off Delay Time
    Collector Emitter Saturation Voltage
    Gate-Emitter Voltage-Max
    Gate-Emitter Thr Voltage-Max
    REACH SVHC
    Lead Free
    JESD-609 Code
    Terminal Finish
    Terminal Position
    JESD-30 Code
    Configuration
    Reverse Recovery Time
    Fall Time-Max (tf)
    View Compare
  • IXGP12N120A2
    IXGP12N120A2
    16 Weeks
    Through Hole
    Through Hole
    TO-220-3
    3
    2.299997g
    SILICON
    -55°C~150°C TJ
    Tube
    2004
    yes
    Active
    1 (Unlimited)
    3
    75W
    NOT SPECIFIED
    NOT SPECIFIED
    IXG*12N120
    3
    Not Qualified
    1
    Single
    COLLECTOR
    Standard
    75W
    POWER CONTROL
    N-CHANNEL
    1.2kV
    24A
    TO-220AB
    1.2kV
    1200V
    45 ns
    960V, 12A, 100 Ω, 15V
    3V @ 15V, 12A
    1750 ns
    PT
    24nC
    48A
    15ns/680ns
    5.4mJ (off)
    ROHS3 Compliant
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • IXGP20N120A3
    26 Weeks
    Through Hole
    Through Hole
    TO-220-3
    3
    2.299997g
    SILICON
    -55°C~150°C TJ
    Tube
    2009
    yes
    Active
    1 (Unlimited)
    3
    180W
    NOT SPECIFIED
    NOT SPECIFIED
    IXG*20N120
    3
    Not Qualified
    1
    Single
    COLLECTOR
    Standard
    -
    POWER CONTROL
    N-CHANNEL
    1.2kV
    40A
    TO-220AB
    1.2kV
    1200V
    66 ns
    960V, 20A, 10 Ω, 15V
    2.5V @ 15V, 20A
    1530 ns
    PT
    50nC
    120A
    16ns/290ns
    2.85mJ (on), 6.47mJ (off)
    ROHS3 Compliant
    GenX3™
    EAR99
    LOW CONDUCTION LOSS
    Insulated Gate BIP Transistors
    180W
    16 ns
    290 ns
    2.3V
    20V
    5V
    No SVHC
    Lead Free
    -
    -
    -
    -
    -
    -
    -
  • IXGP24N60C4D1
    -
    Through Hole
    Through Hole
    TO-220-3
    -
    -
    SILICON
    -55°C~150°C TJ
    Tube
    2011
    yes
    Obsolete
    1 (Unlimited)
    3
    190W
    NOT SPECIFIED
    NOT SPECIFIED
    -
    3
    Not Qualified
    1
    -
    COLLECTOR
    Standard
    190W
    POWER CONTROL
    N-CHANNEL
    2.7V
    56A
    TO-220AB
    600V
    -
    52 ns
    360V, 24A, 10 Ω, 15V
    2.7V @ 15V, 24A
    263 ns
    PT
    64nC
    130A
    22ns/192ns
    350μJ (on), 340μJ (off)
    RoHS Compliant
    -
    -
    ULTRA FAST
    Insulated Gate BIP Transistors
    -
    -
    -
    -
    20V
    5V
    -
    -
    e1
    TIN SILVER COPPER
    SINGLE
    R-PSFM-T3
    SINGLE WITH BUILT-IN DIODE
    30 ns
    -
  • IXGP15N120C
    -
    Through Hole
    Through Hole
    TO-220-3
    -
    -
    SILICON
    -55°C~150°C TJ
    Tube
    2004
    no
    Obsolete
    1 (Unlimited)
    3
    200W
    NOT SPECIFIED
    NOT SPECIFIED
    IXG*15N120
    3
    Not Qualified
    1
    -
    COLLECTOR
    Standard
    200W
    MOTOR CONTROL
    N-CHANNEL
    3.8V
    30A
    TO-220AB
    1.2kV
    1200V
    43 ns
    960V, 15A, 10 Ω, 15V
    3.8V @ 15V, 15A
    470 ns
    -
    86nC
    60A
    25ns/150ns
    1.05mJ (off)
    RoHS Compliant
    Lightspeed™
    -
    -
    Insulated Gate BIP Transistors
    -
    -
    -
    -
    20V
    5V
    -
    -
    e0
    Tin/Lead (Sn/Pb)
    SINGLE
    R-PSFM-T3
    SINGLE
    -
    190ns
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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