IXYS IXGP12N120A3

Name: IXGP12N120A3
Brand: IXYS
SKU: 3072101-IXGP12N120A3
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: IXGP12N120A3

Manufacturer:: IXYS

Ventron No:: 3072101-IXGP12N120A3

Description:: IGBT 1200V 22A 100W TO220

ECAD Model:

Datasheet:: IXGP12N120A3

Specifications

IXYS IXGP12N120A3 technical specifications, attributes, parameters and parts with similar specifications to IXYS IXGP12N120A3.

Factory Lead Time
30 Weeks
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-220-3
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tube
Series
GenX3™
Published
2010
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
Additional Feature
LOW CONDUCTION LOSS
Subcategory
Insulated Gate BIP Transistors
Max Power Dissipation
100W
Terminal Position
SINGLE
Reach Compliance Code
unknown
Pin Count
3
JESD-30 Code
R-PSFM-T3
Number of Elements
1
Configuration
SINGLE
Case Connection
COLLECTOR
Input Type
Standard
Power - Max
100W
Transistor Application
POWER CONTROL
Polarity/Channel Type
N-CHANNEL
Collector Emitter Voltage (VCEO)
3V
Max Collector Current
22A
JEDEC-95 Code
TO-220AB
Collector Emitter Breakdown Voltage
1.2kV
Voltage - Collector Emitter Breakdown (Max)
1200V
Turn On Time
202 ns
Vce(on) (Max) @ Vge, Ic
3V @ 15V, 12A
Turn Off Time-Nom (toff)
1545 ns
IGBT Type
PT
Gate Charge
20.4nC
Current - Collector Pulsed (Icm)
60A
Gate-Emitter Voltage-Max
20V
Gate-Emitter Thr Voltage-Max
5V
RoHS Status
ROHS3 Compliant

Description

IXGP12N120A3 Overview
This product is manufactured by IXYS and belongs to the category of Transistors - IGBTs - Single. The images we provide are for reference only, for detailed product information please see specification sheet IXGP12N120A3 or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of IXGP12N120A3. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.

IXGP12N120A3 More Descriptions

IGBT 1200V 22A 100W TO220
Disc IGBT PT-Low Frequency TO-220

Product Comparison

The three parts on the right have similar specifications to IXGP12N120A3.

Image

Part Number

Manufacturer

Factory Lead Time

Mount

Mounting Type

Package / Case

Transistor Element Material

Operating Temperature

Packaging

Series

Published

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

Additional Feature

Subcategory

Max Power Dissipation

Terminal Position

Reach Compliance Code

Pin Count

JESD-30 Code

Number of Elements

Configuration

Case Connection

Input Type

Power - Max

Transistor Application

Polarity/Channel Type

Collector Emitter Voltage (VCEO)

Max Collector Current

JEDEC-95 Code

Collector Emitter Breakdown Voltage

Voltage - Collector Emitter Breakdown (Max)

Turn On Time

Vce(on) (Max) @ Vge, Ic

Turn Off Time-Nom (toff)

IGBT Type

Gate Charge

Current - Collector Pulsed (Icm)

Gate-Emitter Voltage-Max

Gate-Emitter Thr Voltage-Max

RoHS Status

Number of Pins

Weight

JESD-609 Code

Pbfree Code

ECCN Code

Terminal Finish

Peak Reflow Temperature (Cel)

Time@Peak Reflow Temperature-Max (s)

Base Part Number

Qualification Status

Collector Emitter Saturation Voltage

Test Condition

Td (on/off) @ 25°C

Switching Energy

REACH SVHC

Element Configuration

Power Dissipation

Turn On Delay Time

Turn-Off Delay Time

Lead Free

Reverse Recovery Time

Fall Time-Max (tf)

Radiation Hardening

View Compare
IXGP12N120A3

IXYS

30 Weeks

Through Hole

Through Hole

TO-220-3

SILICON

-55°C~150°C TJ

Tube

GenX3™

2010

Active

1 (Unlimited)

3

LOW CONDUCTION LOSS

Insulated Gate BIP Transistors

100W

SINGLE

unknown

3

R-PSFM-T3

1

SINGLE

COLLECTOR

Standard

100W

POWER CONTROL

N-CHANNEL

3V

22A

TO-220AB

1.2kV

1200V

202 ns

3V @ 15V, 12A

1545 ns

PT

20.4nC

60A

20V

5V

ROHS3 Compliant

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-
IXGP30N60C3C1

IXYS

26 Weeks

Through Hole

Through Hole

TO-220-3

SILICON

-55°C~150°C TJ

Tube

GenX3™

2009

Active

1 (Unlimited)

3

-

Insulated Gate BIP Transistors

220W

SINGLE

unknown

3

-

1

SINGLE WITH BUILT-IN DIODE

COLLECTOR

Standard

220W

POWER CONTROL

N-CHANNEL

3V

60A

TO-220AB

600V

-

37 ns

3V @ 15V, 20A

160 ns

PT

38nC

150A

20V

5.5V

ROHS3 Compliant

3

2.299997g

e3

yes

EAR99

PURE TIN

NOT SPECIFIED

NOT SPECIFIED

IXG*30N60

Not Qualified

3V

300V, 20A, 5 Ω, 15V

17ns/42ns

120μJ (on), 90μJ (off)

No SVHC

-

-

-

-

-

-

-

-

IXGP12N120A3 vs IXGP30N60C3C1
IXGP20N120A3

IXYS

26 Weeks

Through Hole

Through Hole

TO-220-3

SILICON

-55°C~150°C TJ

Tube

GenX3™

2009

Active

1 (Unlimited)

3

LOW CONDUCTION LOSS

Insulated Gate BIP Transistors

180W

-

-

3

-

1

-

COLLECTOR

Standard

-

POWER CONTROL

N-CHANNEL

1.2kV

40A

TO-220AB

1.2kV

1200V

66 ns

2.5V @ 15V, 20A

1530 ns

PT

50nC

120A

20V

5V

ROHS3 Compliant

3

2.299997g

-

yes

EAR99

-

NOT SPECIFIED

NOT SPECIFIED

IXG*20N120

Not Qualified

2.3V

960V, 20A, 10 Ω, 15V

16ns/290ns

2.85mJ (on), 6.47mJ (off)

No SVHC

Single

180W

16 ns

290 ns

Lead Free

-

-

-

IXGP12N120A3 vs IXGP20N120A3
IXGP12N100AU1

IXYS

8 Weeks

Through Hole

Through Hole

TO-220-3

SILICON

-55°C~150°C TJ

Tube

-

2000

Obsolete

1 (Unlimited)

3

HIGH SPEED, FAST

Insulated Gate BIP Transistors

100W

-

-

3

-

1

-

COLLECTOR

Standard

100W

POWER CONTROL

N-CHANNEL

1kV

24A

TO-220AB

1kV

1000V

100 ns

4V @ 15V, 12A

900 ns

-

65nC

48A

20V

5.5V

RoHS Compliant

3

-

-

yes

-

-

-

-

IXG*12N100

-

-

800V, 12A, 120 Ω, 15V

100ns/850ns

4mJ (off)

-

Single

-

-

-

-

60ns

700ns

No

IXGP12N120A3 vs IXGP12N100AU1