IXYS IXGP20N120A3
- Part Number:
- IXGP20N120A3
- Manufacturer:
- IXYS
- Ventron No:
- 3072061-IXGP20N120A3
- Description:
- IGBT 1200V 40A 180W TO220
- Datasheet:
- IXGP20N120A3
IXYS IXGP20N120A3 technical specifications, attributes, parameters and parts with similar specifications to IXYS IXGP20N120A3.
- Factory Lead Time26 Weeks
- MountThrough Hole
- Mounting TypeThrough Hole
- Package / CaseTO-220-3
- Number of Pins3
- Weight2.299997g
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTube
- SeriesGenX3™
- Published2009
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- Additional FeatureLOW CONDUCTION LOSS
- SubcategoryInsulated Gate BIP Transistors
- Max Power Dissipation180W
- Peak Reflow Temperature (Cel)NOT SPECIFIED
- Time@Peak Reflow Temperature-Max (s)NOT SPECIFIED
- Base Part NumberIXG*20N120
- Pin Count3
- Qualification StatusNot Qualified
- Number of Elements1
- Element ConfigurationSingle
- Power Dissipation180W
- Case ConnectionCOLLECTOR
- Input TypeStandard
- Turn On Delay Time16 ns
- Transistor ApplicationPOWER CONTROL
- Polarity/Channel TypeN-CHANNEL
- Turn-Off Delay Time290 ns
- Collector Emitter Voltage (VCEO)1.2kV
- Max Collector Current40A
- JEDEC-95 CodeTO-220AB
- Collector Emitter Breakdown Voltage1.2kV
- Voltage - Collector Emitter Breakdown (Max)1200V
- Collector Emitter Saturation Voltage2.3V
- Turn On Time66 ns
- Test Condition960V, 20A, 10 Ω, 15V
- Vce(on) (Max) @ Vge, Ic2.5V @ 15V, 20A
- Turn Off Time-Nom (toff)1530 ns
- IGBT TypePT
- Gate Charge50nC
- Current - Collector Pulsed (Icm)120A
- Td (on/off) @ 25°C16ns/290ns
- Switching Energy2.85mJ (on), 6.47mJ (off)
- Gate-Emitter Voltage-Max20V
- Gate-Emitter Thr Voltage-Max5V
- REACH SVHCNo SVHC
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
IXGP20N120A3 Overview
This product is manufactured by IXYS and belongs to the category of Transistors - IGBTs - Single. The images we provide are for reference only, for detailed product information please see specification sheet IXGP20N120A3 or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of IXGP20N120A3. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
This product is manufactured by IXYS and belongs to the category of Transistors - IGBTs - Single. The images we provide are for reference only, for detailed product information please see specification sheet IXGP20N120A3 or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of IXGP20N120A3. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
IXGP20N120A3 More Descriptions
Trans IGBT Chip N-CH 1200V 40A 180000mW 3-Pin(3 Tab) TO-220AB
IXGP Series 1200 V 40 A Flange Mount GEN X3 IGBT - TO-220AB
IGBT,1200V,20A,TO-220AB; DC Collector Current: 40A; Collector Emitter Saturation Voltage Vce(on): 2.5V; Power Dissipation Pd: 180W; Collector Emitter Voltage V(br)ceo: 1.2kV; Transistor Case Style: TO-220AB; No. of Pins: 3Pins
Genx3 Igbt, 1200V, 40A, To-220Ab; Continuous Collector Current:40A; Collector Emitter Saturation Voltage:2.3V; Power Dissipation:180W; Collector Emitter Voltage Max:1.2Kv; No. Of Pins:3Pins; Operating Temperature Max:150°C; Msl:- Rohs Compliant: Yes |Ixys Semiconductor IXGP20N120A3
IXGP Series 1200 V 40 A Flange Mount GEN X3 IGBT - TO-220AB
IGBT,1200V,20A,TO-220AB; DC Collector Current: 40A; Collector Emitter Saturation Voltage Vce(on): 2.5V; Power Dissipation Pd: 180W; Collector Emitter Voltage V(br)ceo: 1.2kV; Transistor Case Style: TO-220AB; No. of Pins: 3Pins
Genx3 Igbt, 1200V, 40A, To-220Ab; Continuous Collector Current:40A; Collector Emitter Saturation Voltage:2.3V; Power Dissipation:180W; Collector Emitter Voltage Max:1.2Kv; No. Of Pins:3Pins; Operating Temperature Max:150°C; Msl:- Rohs Compliant: Yes |Ixys Semiconductor IXGP20N120A3
The three parts on the right have similar specifications to IXGP20N120A3.
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ImagePart NumberManufacturerFactory Lead TimeMountMounting TypePackage / CaseNumber of PinsWeightTransistor Element MaterialOperating TemperaturePackagingSeriesPublishedPbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeAdditional FeatureSubcategoryMax Power DissipationPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)Base Part NumberPin CountQualification StatusNumber of ElementsElement ConfigurationPower DissipationCase ConnectionInput TypeTurn On Delay TimeTransistor ApplicationPolarity/Channel TypeTurn-Off Delay TimeCollector Emitter Voltage (VCEO)Max Collector CurrentJEDEC-95 CodeCollector Emitter Breakdown VoltageVoltage - Collector Emitter Breakdown (Max)Collector Emitter Saturation VoltageTurn On TimeTest ConditionVce(on) (Max) @ Vge, IcTurn Off Time-Nom (toff)IGBT TypeGate ChargeCurrent - Collector Pulsed (Icm)Td (on/off) @ 25°CSwitching EnergyGate-Emitter Voltage-MaxGate-Emitter Thr Voltage-MaxREACH SVHCRoHS StatusLead FreePower - MaxTerminal PositionReach Compliance CodeJESD-30 CodeConfigurationJESD-609 CodeTerminal FinishFall Time-Max (tf)View Compare
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IXGP20N120A326 WeeksThrough HoleThrough HoleTO-220-332.299997gSILICON-55°C~150°C TJTubeGenX3™2009yesActive1 (Unlimited)3EAR99LOW CONDUCTION LOSSInsulated Gate BIP Transistors180WNOT SPECIFIEDNOT SPECIFIEDIXG*20N1203Not Qualified1Single180WCOLLECTORStandard16 nsPOWER CONTROLN-CHANNEL290 ns1.2kV40ATO-220AB1.2kV1200V2.3V66 ns960V, 20A, 10 Ω, 15V2.5V @ 15V, 20A1530 nsPT50nC120A16ns/290ns2.85mJ (on), 6.47mJ (off)20V5VNo SVHCROHS3 CompliantLead Free---------
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16 WeeksThrough HoleThrough HoleTO-220-332.299997gSILICON-55°C~150°C TJTube-2004yesActive1 (Unlimited)3---75WNOT SPECIFIEDNOT SPECIFIEDIXG*12N1203Not Qualified1Single-COLLECTORStandard-POWER CONTROLN-CHANNEL-1.2kV24ATO-220AB1.2kV1200V-45 ns960V, 12A, 100 Ω, 15V3V @ 15V, 12A1750 nsPT24nC48A15ns/680ns5.4mJ (off)---ROHS3 Compliant-75W-------
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30 WeeksThrough HoleThrough HoleTO-220-3--SILICON-55°C~150°C TJTubeGenX3™2010-Active1 (Unlimited)3-LOW CONDUCTION LOSSInsulated Gate BIP Transistors100W---3-1--COLLECTORStandard-POWER CONTROLN-CHANNEL-3V22ATO-220AB1.2kV1200V-202 ns-3V @ 15V, 12A1545 nsPT20.4nC60A--20V5V-ROHS3 Compliant-100WSINGLEunknownR-PSFM-T3SINGLE---
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-Through HoleThrough HoleTO-220-3--SILICON-55°C~150°C TJTubeLightspeed™2004noObsolete1 (Unlimited)3--Insulated Gate BIP Transistors200WNOT SPECIFIEDNOT SPECIFIEDIXG*15N1203Not Qualified1--COLLECTORStandard-MOTOR CONTROLN-CHANNEL-3.8V30ATO-220AB1.2kV1200V-43 ns960V, 15A, 10 Ω, 15V3.8V @ 15V, 15A470 ns-86nC60A25ns/150ns1.05mJ (off)20V5V-RoHS Compliant-200WSINGLE-R-PSFM-T3SINGLEe0Tin/Lead (Sn/Pb)190ns
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