IXGP20N120A3

IXYS IXGP20N120A3

Part Number:
IXGP20N120A3
Manufacturer:
IXYS
Ventron No:
3072061-IXGP20N120A3
Description:
IGBT 1200V 40A 180W TO220
ECAD Model:
Datasheet:
IXGP20N120A3

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Specifications
IXYS IXGP20N120A3 technical specifications, attributes, parameters and parts with similar specifications to IXYS IXGP20N120A3.
  • Factory Lead Time
    26 Weeks
  • Mount
    Through Hole
  • Mounting Type
    Through Hole
  • Package / Case
    TO-220-3
  • Number of Pins
    3
  • Weight
    2.299997g
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Tube
  • Series
    GenX3™
  • Published
    2009
  • Pbfree Code
    yes
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    3
  • ECCN Code
    EAR99
  • Additional Feature
    LOW CONDUCTION LOSS
  • Subcategory
    Insulated Gate BIP Transistors
  • Max Power Dissipation
    180W
  • Peak Reflow Temperature (Cel)
    NOT SPECIFIED
  • Time@Peak Reflow Temperature-Max (s)
    NOT SPECIFIED
  • Base Part Number
    IXG*20N120
  • Pin Count
    3
  • Qualification Status
    Not Qualified
  • Number of Elements
    1
  • Element Configuration
    Single
  • Power Dissipation
    180W
  • Case Connection
    COLLECTOR
  • Input Type
    Standard
  • Turn On Delay Time
    16 ns
  • Transistor Application
    POWER CONTROL
  • Polarity/Channel Type
    N-CHANNEL
  • Turn-Off Delay Time
    290 ns
  • Collector Emitter Voltage (VCEO)
    1.2kV
  • Max Collector Current
    40A
  • JEDEC-95 Code
    TO-220AB
  • Collector Emitter Breakdown Voltage
    1.2kV
  • Voltage - Collector Emitter Breakdown (Max)
    1200V
  • Collector Emitter Saturation Voltage
    2.3V
  • Turn On Time
    66 ns
  • Test Condition
    960V, 20A, 10 Ω, 15V
  • Vce(on) (Max) @ Vge, Ic
    2.5V @ 15V, 20A
  • Turn Off Time-Nom (toff)
    1530 ns
  • IGBT Type
    PT
  • Gate Charge
    50nC
  • Current - Collector Pulsed (Icm)
    120A
  • Td (on/off) @ 25°C
    16ns/290ns
  • Switching Energy
    2.85mJ (on), 6.47mJ (off)
  • Gate-Emitter Voltage-Max
    20V
  • Gate-Emitter Thr Voltage-Max
    5V
  • REACH SVHC
    No SVHC
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Lead Free
Description
IXGP20N120A3 Overview
This product is manufactured by IXYS and belongs to the category of Transistors - IGBTs - Single. The images we provide are for reference only, for detailed product information please see specification sheet IXGP20N120A3 or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of IXGP20N120A3. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
IXGP20N120A3 More Descriptions
Trans IGBT Chip N-CH 1200V 40A 180000mW 3-Pin(3 Tab) TO-220AB
IXGP Series 1200 V 40 A Flange Mount GEN X3 IGBT - TO-220AB
IGBT,1200V,20A,TO-220AB; DC Collector Current: 40A; Collector Emitter Saturation Voltage Vce(on): 2.5V; Power Dissipation Pd: 180W; Collector Emitter Voltage V(br)ceo: 1.2kV; Transistor Case Style: TO-220AB; No. of Pins: 3Pins
Genx3 Igbt, 1200V, 40A, To-220Ab; Continuous Collector Current:40A; Collector Emitter Saturation Voltage:2.3V; Power Dissipation:180W; Collector Emitter Voltage Max:1.2Kv; No. Of Pins:3Pins; Operating Temperature Max:150°C; Msl:- Rohs Compliant: Yes |Ixys Semiconductor IXGP20N120A3
Product Comparison
The three parts on the right have similar specifications to IXGP20N120A3.
  • Image
    Part Number
    Manufacturer
    Factory Lead Time
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Weight
    Transistor Element Material
    Operating Temperature
    Packaging
    Series
    Published
    Pbfree Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    ECCN Code
    Additional Feature
    Subcategory
    Max Power Dissipation
    Peak Reflow Temperature (Cel)
    Time@Peak Reflow Temperature-Max (s)
    Base Part Number
    Pin Count
    Qualification Status
    Number of Elements
    Element Configuration
    Power Dissipation
    Case Connection
    Input Type
    Turn On Delay Time
    Transistor Application
    Polarity/Channel Type
    Turn-Off Delay Time
    Collector Emitter Voltage (VCEO)
    Max Collector Current
    JEDEC-95 Code
    Collector Emitter Breakdown Voltage
    Voltage - Collector Emitter Breakdown (Max)
    Collector Emitter Saturation Voltage
    Turn On Time
    Test Condition
    Vce(on) (Max) @ Vge, Ic
    Turn Off Time-Nom (toff)
    IGBT Type
    Gate Charge
    Current - Collector Pulsed (Icm)
    Td (on/off) @ 25°C
    Switching Energy
    Gate-Emitter Voltage-Max
    Gate-Emitter Thr Voltage-Max
    REACH SVHC
    RoHS Status
    Lead Free
    Power - Max
    Terminal Position
    Reach Compliance Code
    JESD-30 Code
    Configuration
    JESD-609 Code
    Terminal Finish
    Fall Time-Max (tf)
    View Compare
  • IXGP20N120A3
    IXGP20N120A3
    26 Weeks
    Through Hole
    Through Hole
    TO-220-3
    3
    2.299997g
    SILICON
    -55°C~150°C TJ
    Tube
    GenX3™
    2009
    yes
    Active
    1 (Unlimited)
    3
    EAR99
    LOW CONDUCTION LOSS
    Insulated Gate BIP Transistors
    180W
    NOT SPECIFIED
    NOT SPECIFIED
    IXG*20N120
    3
    Not Qualified
    1
    Single
    180W
    COLLECTOR
    Standard
    16 ns
    POWER CONTROL
    N-CHANNEL
    290 ns
    1.2kV
    40A
    TO-220AB
    1.2kV
    1200V
    2.3V
    66 ns
    960V, 20A, 10 Ω, 15V
    2.5V @ 15V, 20A
    1530 ns
    PT
    50nC
    120A
    16ns/290ns
    2.85mJ (on), 6.47mJ (off)
    20V
    5V
    No SVHC
    ROHS3 Compliant
    Lead Free
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • IXGP12N120A2
    16 Weeks
    Through Hole
    Through Hole
    TO-220-3
    3
    2.299997g
    SILICON
    -55°C~150°C TJ
    Tube
    -
    2004
    yes
    Active
    1 (Unlimited)
    3
    -
    -
    -
    75W
    NOT SPECIFIED
    NOT SPECIFIED
    IXG*12N120
    3
    Not Qualified
    1
    Single
    -
    COLLECTOR
    Standard
    -
    POWER CONTROL
    N-CHANNEL
    -
    1.2kV
    24A
    TO-220AB
    1.2kV
    1200V
    -
    45 ns
    960V, 12A, 100 Ω, 15V
    3V @ 15V, 12A
    1750 ns
    PT
    24nC
    48A
    15ns/680ns
    5.4mJ (off)
    -
    -
    -
    ROHS3 Compliant
    -
    75W
    -
    -
    -
    -
    -
    -
    -
  • IXGP12N120A3
    30 Weeks
    Through Hole
    Through Hole
    TO-220-3
    -
    -
    SILICON
    -55°C~150°C TJ
    Tube
    GenX3™
    2010
    -
    Active
    1 (Unlimited)
    3
    -
    LOW CONDUCTION LOSS
    Insulated Gate BIP Transistors
    100W
    -
    -
    -
    3
    -
    1
    -
    -
    COLLECTOR
    Standard
    -
    POWER CONTROL
    N-CHANNEL
    -
    3V
    22A
    TO-220AB
    1.2kV
    1200V
    -
    202 ns
    -
    3V @ 15V, 12A
    1545 ns
    PT
    20.4nC
    60A
    -
    -
    20V
    5V
    -
    ROHS3 Compliant
    -
    100W
    SINGLE
    unknown
    R-PSFM-T3
    SINGLE
    -
    -
    -
  • IXGP15N120C
    -
    Through Hole
    Through Hole
    TO-220-3
    -
    -
    SILICON
    -55°C~150°C TJ
    Tube
    Lightspeed™
    2004
    no
    Obsolete
    1 (Unlimited)
    3
    -
    -
    Insulated Gate BIP Transistors
    200W
    NOT SPECIFIED
    NOT SPECIFIED
    IXG*15N120
    3
    Not Qualified
    1
    -
    -
    COLLECTOR
    Standard
    -
    MOTOR CONTROL
    N-CHANNEL
    -
    3.8V
    30A
    TO-220AB
    1.2kV
    1200V
    -
    43 ns
    960V, 15A, 10 Ω, 15V
    3.8V @ 15V, 15A
    470 ns
    -
    86nC
    60A
    25ns/150ns
    1.05mJ (off)
    20V
    5V
    -
    RoHS Compliant
    -
    200W
    SINGLE
    -
    R-PSFM-T3
    SINGLE
    e0
    Tin/Lead (Sn/Pb)
    190ns
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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