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IXGP8N100

IXYS IXGP8N100

Part Number:
IXGP8N100
Manufacturer:
IXYS
Ventron No:
3587328-IXGP8N100
Description:
IGBT 1000V 16A 54W TO220
ECAD Model:
Datasheet:
IXGP8N100

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Specifications
IXYS IXGP8N100 technical specifications, attributes, parameters and parts with similar specifications to IXYS IXGP8N100.
  • Mount
    Through Hole
  • Mounting Type
    Through Hole
  • Package / Case
    TO-220-3
  • Number of Pins
    3
  • Weight
    2.299997g
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Tube
  • Published
    2004
  • Pbfree Code
    yes
  • Part Status
    Obsolete
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    3
  • Additional Feature
    LOW SATURATION VOLTAGE
  • Subcategory
    Insulated Gate BIP Transistors
  • Max Power Dissipation
    54W
  • Peak Reflow Temperature (Cel)
    NOT SPECIFIED
  • Reach Compliance Code
    unknown
  • Time@Peak Reflow Temperature-Max (s)
    NOT SPECIFIED
  • Pin Count
    3
  • Qualification Status
    Not Qualified
  • Number of Elements
    1
  • Element Configuration
    Single
  • Input Type
    Standard
  • Turn On Delay Time
    15 ns
  • Power - Max
    54W
  • Transistor Application
    POWER CONTROL
  • Polarity/Channel Type
    N-CHANNEL
  • Turn-Off Delay Time
    600 ns
  • Collector Emitter Voltage (VCEO)
    1kV
  • Max Collector Current
    16A
  • JEDEC-95 Code
    TO-220AB
  • Collector Emitter Breakdown Voltage
    1kV
  • Voltage - Collector Emitter Breakdown (Max)
    1000V
  • Collector Emitter Saturation Voltage
    3V
  • Turn On Time
    15 ns
  • Test Condition
    800V, 8A, 120 Ω, 15V
  • Vce(on) (Max) @ Vge, Ic
    2.7V @ 15V, 8A
  • Turn Off Time-Nom (toff)
    900 ns
  • IGBT Type
    PT
  • Gate Charge
    26.5nC
  • Current - Collector Pulsed (Icm)
    32A
  • Td (on/off) @ 25°C
    15ns/600ns
  • Switching Energy
    2.3mJ (off)
  • Gate-Emitter Voltage-Max
    20V
  • Gate-Emitter Thr Voltage-Max
    5.5V
  • RoHS Status
    RoHS Compliant
  • Lead Free
    Lead Free
Description
IXGP8N100 Overview
This product is manufactured by IXYS and belongs to the category of Transistors - IGBTs - Single. The images we provide are for reference only, for detailed product information please see specification sheet IXGP8N100 or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of IXGP8N100. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
IXGP8N100 More Descriptions
IGBT 1000V 16A 54W TO220
Contact for details
Product Comparison
The three parts on the right have similar specifications to IXGP8N100.
  • Image
    Part Number
    Manufacturer
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Weight
    Transistor Element Material
    Operating Temperature
    Packaging
    Published
    Pbfree Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    Additional Feature
    Subcategory
    Max Power Dissipation
    Peak Reflow Temperature (Cel)
    Reach Compliance Code
    Time@Peak Reflow Temperature-Max (s)
    Pin Count
    Qualification Status
    Number of Elements
    Element Configuration
    Input Type
    Turn On Delay Time
    Power - Max
    Transistor Application
    Polarity/Channel Type
    Turn-Off Delay Time
    Collector Emitter Voltage (VCEO)
    Max Collector Current
    JEDEC-95 Code
    Collector Emitter Breakdown Voltage
    Voltage - Collector Emitter Breakdown (Max)
    Collector Emitter Saturation Voltage
    Turn On Time
    Test Condition
    Vce(on) (Max) @ Vge, Ic
    Turn Off Time-Nom (toff)
    IGBT Type
    Gate Charge
    Current - Collector Pulsed (Icm)
    Td (on/off) @ 25°C
    Switching Energy
    Gate-Emitter Voltage-Max
    Gate-Emitter Thr Voltage-Max
    RoHS Status
    Lead Free
    Factory Lead Time
    Series
    JESD-609 Code
    ECCN Code
    Terminal Finish
    Terminal Position
    Base Part Number
    Configuration
    Case Connection
    REACH SVHC
    Power Dissipation
    View Compare
  • IXGP8N100
    IXGP8N100
    IXYS
    Through Hole
    Through Hole
    TO-220-3
    3
    2.299997g
    SILICON
    -55°C~150°C TJ
    Tube
    2004
    yes
    Obsolete
    1 (Unlimited)
    3
    LOW SATURATION VOLTAGE
    Insulated Gate BIP Transistors
    54W
    NOT SPECIFIED
    unknown
    NOT SPECIFIED
    3
    Not Qualified
    1
    Single
    Standard
    15 ns
    54W
    POWER CONTROL
    N-CHANNEL
    600 ns
    1kV
    16A
    TO-220AB
    1kV
    1000V
    3V
    15 ns
    800V, 8A, 120 Ω, 15V
    2.7V @ 15V, 8A
    900 ns
    PT
    26.5nC
    32A
    15ns/600ns
    2.3mJ (off)
    20V
    5.5V
    RoHS Compliant
    Lead Free
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • IXGP30N60C3C1
    IXGP30N60C3C1
    IXYS
    Through Hole
    Through Hole
    TO-220-3
    3
    2.299997g
    SILICON
    -55°C~150°C TJ
    Tube
    2009
    yes
    Active
    1 (Unlimited)
    3
    -
    Insulated Gate BIP Transistors
    220W
    NOT SPECIFIED
    unknown
    NOT SPECIFIED
    3
    Not Qualified
    1
    -
    Standard
    -
    220W
    POWER CONTROL
    N-CHANNEL
    -
    3V
    60A
    TO-220AB
    600V
    -
    3V
    37 ns
    300V, 20A, 5 Ω, 15V
    3V @ 15V, 20A
    160 ns
    PT
    38nC
    150A
    17ns/42ns
    120μJ (on), 90μJ (off)
    20V
    5.5V
    ROHS3 Compliant
    -
    26 Weeks
    GenX3™
    e3
    EAR99
    PURE TIN
    SINGLE
    IXG*30N60
    SINGLE WITH BUILT-IN DIODE
    COLLECTOR
    No SVHC
    -
    IXGP8N100 vs IXGP30N60C3C1
  • IXGP20N120A3
    IXGP20N120A3
    IXYS
    Through Hole
    Through Hole
    TO-220-3
    3
    2.299997g
    SILICON
    -55°C~150°C TJ
    Tube
    2009
    yes
    Active
    1 (Unlimited)
    3
    LOW CONDUCTION LOSS
    Insulated Gate BIP Transistors
    180W
    NOT SPECIFIED
    -
    NOT SPECIFIED
    3
    Not Qualified
    1
    Single
    Standard
    16 ns
    -
    POWER CONTROL
    N-CHANNEL
    290 ns
    1.2kV
    40A
    TO-220AB
    1.2kV
    1200V
    2.3V
    66 ns
    960V, 20A, 10 Ω, 15V
    2.5V @ 15V, 20A
    1530 ns
    PT
    50nC
    120A
    16ns/290ns
    2.85mJ (on), 6.47mJ (off)
    20V
    5V
    ROHS3 Compliant
    Lead Free
    26 Weeks
    GenX3™
    -
    EAR99
    -
    -
    IXG*20N120
    -
    COLLECTOR
    No SVHC
    180W
    IXGP8N100 vs IXGP20N120A3
  • IXGP15N120B
    IXGP15N120B
    IXYS
    Through Hole
    Through Hole
    TO-220-3
    3
    2.299997g
    SILICON
    -55°C~150°C TJ
    Tube
    2000
    yes
    Active
    1 (Unlimited)
    3
    -
    Insulated Gate BIP Transistors
    150W
    NOT SPECIFIED
    -
    NOT SPECIFIED
    3
    Not Qualified
    1
    Single
    Standard
    -
    150W
    POWER CONTROL
    N-CHANNEL
    -
    1.2kV
    30A
    TO-220AB
    1.2kV
    1200V
    3.2V
    43 ns
    960V, 15A, 10 Ω, 15V
    3.2V @ 15V, 15A
    660 ns
    PT
    69nC
    60A
    25ns/180ns
    1.75mJ (off)
    20V
    5V
    ROHS3 Compliant
    -
    8 Weeks
    HiPerFAST™
    -
    -
    -
    -
    IXG*15N120
    -
    -
    -
    -
    IXGP8N100 vs IXGP15N120B
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS
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