IXYS IXGK35N120B
- Part Number:
- IXGK35N120B
- Manufacturer:
- IXYS
- Ventron No:
- 3554893-IXGK35N120B
- Description:
- IGBT 1200V 70A 350W TO264AA
- Datasheet:
- IXGK35N120B
IXYS IXGK35N120B technical specifications, attributes, parameters and parts with similar specifications to IXYS IXGK35N120B.
- Factory Lead Time8 Weeks
- MountThrough Hole
- Mounting TypeThrough Hole
- Package / CaseTO-264-3, TO-264AA
- Number of Pins3
- Weight10.000011g
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTube
- SeriesHiPerFAST™
- Published2002
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- SubcategoryInsulated Gate BIP Transistors
- Max Power Dissipation350W
- Peak Reflow Temperature (Cel)NOT SPECIFIED
- Time@Peak Reflow Temperature-Max (s)NOT SPECIFIED
- Base Part NumberIXG*35N120
- Pin Count3
- Qualification StatusNot Qualified
- Number of Elements1
- Element ConfigurationSingle
- Case ConnectionCOLLECTOR
- Input TypeStandard
- Power - Max350W
- Transistor ApplicationMOTOR CONTROL
- Polarity/Channel TypeN-CHANNEL
- Collector Emitter Voltage (VCEO)1.2kV
- Max Collector Current70A
- Collector Emitter Breakdown Voltage1.2kV
- Voltage - Collector Emitter Breakdown (Max)1200V
- Collector Emitter Saturation Voltage3.3V
- Turn On Time86 ns
- Test Condition960V, 35A, 5 Ω, 15V
- Vce(on) (Max) @ Vge, Ic3.3V @ 15V, 35A
- Turn Off Time-Nom (toff)660 ns
- IGBT TypePT
- Gate Charge170nC
- Current - Collector Pulsed (Icm)140A
- Td (on/off) @ 25°C50ns/180ns
- Switching Energy3.8mJ (off)
- Gate-Emitter Voltage-Max20V
- Gate-Emitter Thr Voltage-Max5V
- RoHS StatusROHS3 Compliant
IXGK35N120B Overview
This product is manufactured by IXYS and belongs to the category of Transistors - IGBTs - Single. The images we provide are for reference only, for detailed product information please see specification sheet IXGK35N120B or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of IXGK35N120B. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
This product is manufactured by IXYS and belongs to the category of Transistors - IGBTs - Single. The images we provide are for reference only, for detailed product information please see specification sheet IXGK35N120B or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of IXGK35N120B. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
IXGK35N120B More Descriptions
IGBT 1200V 70A 350W TO264AA
Contact for details
Contact for details
The three parts on the right have similar specifications to IXGK35N120B.
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ImagePart NumberManufacturerFactory Lead TimeMountMounting TypePackage / CaseNumber of PinsWeightTransistor Element MaterialOperating TemperaturePackagingSeriesPublishedPbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsSubcategoryMax Power DissipationPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)Base Part NumberPin CountQualification StatusNumber of ElementsElement ConfigurationCase ConnectionInput TypePower - MaxTransistor ApplicationPolarity/Channel TypeCollector Emitter Voltage (VCEO)Max Collector CurrentCollector Emitter Breakdown VoltageVoltage - Collector Emitter Breakdown (Max)Collector Emitter Saturation VoltageTurn On TimeTest ConditionVce(on) (Max) @ Vge, IcTurn Off Time-Nom (toff)IGBT TypeGate ChargeCurrent - Collector Pulsed (Icm)Td (on/off) @ 25°CSwitching EnergyGate-Emitter Voltage-MaxGate-Emitter Thr Voltage-MaxRoHS StatusJESD-609 CodeTerminal FinishAdditional FeatureTerminal PositionReach Compliance CodeJESD-30 CodeConfigurationPower DissipationReverse Recovery TimeSupplier Device PackageView Compare
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IXGK35N120B8 WeeksThrough HoleThrough HoleTO-264-3, TO-264AA310.000011gSILICON-55°C~150°C TJTubeHiPerFAST™2002yesActive1 (Unlimited)3Insulated Gate BIP Transistors350WNOT SPECIFIEDNOT SPECIFIEDIXG*35N1203Not Qualified1SingleCOLLECTORStandard350WMOTOR CONTROLN-CHANNEL1.2kV70A1.2kV1200V3.3V86 ns960V, 35A, 5 Ω, 15V3.3V @ 15V, 35A660 nsPT170nC140A50ns/180ns3.8mJ (off)20V5VROHS3 Compliant-----------
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8 WeeksThrough HoleThrough HoleTO-264-3, TO-264AA--SILICON-55°C~150°C TJTubeGenX3™2009yesActive1 (Unlimited)3Insulated Gate BIP Transistors540WNOT SPECIFIEDNOT SPECIFIEDIXG*72N603Not Qualified1-COLLECTORStandard-POWER CONTROLN-CHANNEL1.35V75A600V-1.35V63 ns480V, 50A, 3 Ω, 15V1.35V @ 15V, 60A885 nsPT230nC400A31ns/320ns1.4mJ (on), 3.5mJ (off)20V5VROHS3 Compliante1TIN SILVER COPPERLOW CONDUCTION LOSSSINGLEunknownR-PSFM-T3SINGLE WITH BUILT-IN DIODE540W140ns-
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-Through HoleThrough HoleTO-264-3, TO-264AA----Tube---Active1 (Unlimited)-----IXG*72N60-------------------------ROHS3 Compliant---------TO-264 (IXGK)
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8 WeeksThrough HoleThrough HoleTO-264-3, TO-264AA-10.000011gSILICON-55°C~150°C TJTubeGenX3™2010yesObsolete1 (Unlimited)3Insulated Gate BIP Transistors300WNOT SPECIFIEDNOT SPECIFIED-3Not Qualified1SingleCOLLECTORStandard-POWER CONTROLN-CHANNEL1.4kV60A1.4kV1400V3V66 ns960V, 28A, 5 Ω, 15V3.6V @ 15V, 28A915 nsPT88nC150A16ns/190ns3.6mJ (on), 3.9mJ (off)20V5VRoHS Compliante1Tin/Silver/Copper (Sn/Ag/Cu)---R-PSFM-T3-300W350 ns-
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