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IXGK50N60C2D1

IXYS IXGK50N60C2D1

Part Number:
IXGK50N60C2D1
Manufacturer:
IXYS
Ventron No:
3072191-IXGK50N60C2D1
Description:
IGBT 600V 75A 480W TO264AA
ECAD Model:
Datasheet:
IXGK50N60C2D1

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Specifications
IXYS IXGK50N60C2D1 technical specifications, attributes, parameters and parts with similar specifications to IXYS IXGK50N60C2D1.
  • Factory Lead Time
    8 Weeks
  • Mount
    Through Hole
  • Mounting Type
    Through Hole
  • Package / Case
    TO-264-3, TO-264AA
  • Number of Pins
    3
  • Weight
    10.000011g
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Tube
  • Series
    HiPerFAST™
  • Published
    2012
  • Pbfree Code
    yes
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    3
  • Max Power Dissipation
    480W
  • Peak Reflow Temperature (Cel)
    NOT SPECIFIED
  • Time@Peak Reflow Temperature-Max (s)
    NOT SPECIFIED
  • Base Part Number
    IXG*50N60
  • Pin Count
    3
  • Qualification Status
    Not Qualified
  • Number of Elements
    1
  • Element Configuration
    Single
  • Case Connection
    COLLECTOR
  • Input Type
    Standard
  • Power - Max
    480W
  • Transistor Application
    MOTOR CONTROL
  • Polarity/Channel Type
    N-CHANNEL
  • Collector Emitter Voltage (VCEO)
    600V
  • Max Collector Current
    75A
  • Reverse Recovery Time
    35 ns
  • Collector Emitter Breakdown Voltage
    600V
  • Collector Emitter Saturation Voltage
    2.5V
  • Turn On Time
    43 ns
  • Test Condition
    480V, 40A, 2 Ω, 15V
  • Vce(on) (Max) @ Vge, Ic
    2.5V @ 15V, 40A
  • Turn Off Time-Nom (toff)
    230 ns
  • IGBT Type
    PT
  • Gate Charge
    138nC
  • Current - Collector Pulsed (Icm)
    300A
  • Td (on/off) @ 25°C
    18ns/115ns
  • Switching Energy
    380μJ (off)
  • RoHS Status
    ROHS3 Compliant
Description
IXGK50N60C2D1 Overview
This product is manufactured by IXYS and belongs to the category of Transistors - IGBTs - Single. The images we provide are for reference only, for detailed product information please see specification sheet IXGK50N60C2D1 or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of IXGK50N60C2D1. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
IXGK50N60C2D1 More Descriptions
IGBT 600V 75A 480W TO264AA
IGBT 75A 600V TO-264AA
Contact for details
Product Comparison
The three parts on the right have similar specifications to IXGK50N60C2D1.
  • Image
    Part Number
    Manufacturer
    Factory Lead Time
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Weight
    Transistor Element Material
    Operating Temperature
    Packaging
    Series
    Published
    Pbfree Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    Max Power Dissipation
    Peak Reflow Temperature (Cel)
    Time@Peak Reflow Temperature-Max (s)
    Base Part Number
    Pin Count
    Qualification Status
    Number of Elements
    Element Configuration
    Case Connection
    Input Type
    Power - Max
    Transistor Application
    Polarity/Channel Type
    Collector Emitter Voltage (VCEO)
    Max Collector Current
    Reverse Recovery Time
    Collector Emitter Breakdown Voltage
    Collector Emitter Saturation Voltage
    Turn On Time
    Test Condition
    Vce(on) (Max) @ Vge, Ic
    Turn Off Time-Nom (toff)
    IGBT Type
    Gate Charge
    Current - Collector Pulsed (Icm)
    Td (on/off) @ 25°C
    Switching Energy
    RoHS Status
    JESD-609 Code
    Terminal Finish
    Additional Feature
    Subcategory
    Terminal Position
    Reach Compliance Code
    JESD-30 Code
    Configuration
    Power Dissipation
    Gate-Emitter Voltage-Max
    Gate-Emitter Thr Voltage-Max
    Voltage - Rated DC
    Current Rating
    Rise Time
    Lead Free
    Voltage - Collector Emitter Breakdown (Max)
    View Compare
  • IXGK50N60C2D1
    IXGK50N60C2D1
    IXYS
    8 Weeks
    Through Hole
    Through Hole
    TO-264-3, TO-264AA
    3
    10.000011g
    SILICON
    -55°C~150°C TJ
    Tube
    HiPerFAST™
    2012
    yes
    Active
    1 (Unlimited)
    3
    480W
    NOT SPECIFIED
    NOT SPECIFIED
    IXG*50N60
    3
    Not Qualified
    1
    Single
    COLLECTOR
    Standard
    480W
    MOTOR CONTROL
    N-CHANNEL
    600V
    75A
    35 ns
    600V
    2.5V
    43 ns
    480V, 40A, 2 Ω, 15V
    2.5V @ 15V, 40A
    230 ns
    PT
    138nC
    300A
    18ns/115ns
    380μJ (off)
    ROHS3 Compliant
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • IXGK72N60A3H1
    IXGK72N60A3H1
    IXYS
    8 Weeks
    Through Hole
    Through Hole
    TO-264-3, TO-264AA
    -
    -
    SILICON
    -55°C~150°C TJ
    Tube
    GenX3™
    2009
    yes
    Active
    1 (Unlimited)
    3
    540W
    NOT SPECIFIED
    NOT SPECIFIED
    IXG*72N60
    3
    Not Qualified
    1
    -
    COLLECTOR
    Standard
    -
    POWER CONTROL
    N-CHANNEL
    1.35V
    75A
    140ns
    600V
    1.35V
    63 ns
    480V, 50A, 3 Ω, 15V
    1.35V @ 15V, 60A
    885 ns
    PT
    230nC
    400A
    31ns/320ns
    1.4mJ (on), 3.5mJ (off)
    ROHS3 Compliant
    e1
    TIN SILVER COPPER
    LOW CONDUCTION LOSS
    Insulated Gate BIP Transistors
    SINGLE
    unknown
    R-PSFM-T3
    SINGLE WITH BUILT-IN DIODE
    540W
    20V
    5V
    -
    -
    -
    -
    -
    IXGK50N60C2D1 vs IXGK72N60A3H1
  • IXGK50N60B
    IXGK50N60B
    IXYS
    -
    Through Hole
    Through Hole
    TO-264-3, TO-264AA
    3
    10.000011g
    SILICON
    -55°C~150°C TJ
    Bulk
    HiPerFAST™
    2000
    yes
    Obsolete
    Not Applicable
    3
    300W
    NOT SPECIFIED
    NOT SPECIFIED
    IXG*50N60
    3
    Not Qualified
    1
    Single
    COLLECTOR
    Standard
    -
    POWER CONTROL
    N-CHANNEL
    600V
    75A
    -
    600V
    -
    100 ns
    480V, 50A, 2.7 Ω, 15V
    2.3V @ 15V, 50A
    450 ns
    -
    160nC
    200A
    50ns/150ns
    3mJ (off)
    RoHS Compliant
    -
    -
    -
    Insulated Gate BIP Transistors
    -
    -
    -
    -
    -
    20V
    5V
    600V
    75A
    50ns
    Lead Free
    -
    IXGK50N60C2D1 vs IXGK50N60B
  • IXGK28N140B3H1
    IXGK28N140B3H1
    IXYS
    8 Weeks
    Through Hole
    Through Hole
    TO-264-3, TO-264AA
    -
    10.000011g
    SILICON
    -55°C~150°C TJ
    Tube
    GenX3™
    2010
    yes
    Obsolete
    1 (Unlimited)
    3
    300W
    NOT SPECIFIED
    NOT SPECIFIED
    -
    3
    Not Qualified
    1
    Single
    COLLECTOR
    Standard
    -
    POWER CONTROL
    N-CHANNEL
    1.4kV
    60A
    350 ns
    1.4kV
    3V
    66 ns
    960V, 28A, 5 Ω, 15V
    3.6V @ 15V, 28A
    915 ns
    PT
    88nC
    150A
    16ns/190ns
    3.6mJ (on), 3.9mJ (off)
    RoHS Compliant
    e1
    Tin/Silver/Copper (Sn/Ag/Cu)
    -
    Insulated Gate BIP Transistors
    -
    -
    R-PSFM-T3
    -
    300W
    20V
    5V
    -
    -
    -
    -
    1400V
    IXGK50N60C2D1 vs IXGK28N140B3H1
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS
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