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IXGK50N60BU1

IXYS IXGK50N60BU1

Part Number:
IXGK50N60BU1
Manufacturer:
IXYS
Ventron No:
3554889-IXGK50N60BU1
Description:
IGBT 600V 75A 300W TO264AA
ECAD Model:
Datasheet:
IXGK50N(50,60)BU1

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Specifications
IXYS IXGK50N60BU1 technical specifications, attributes, parameters and parts with similar specifications to IXYS IXGK50N60BU1.
  • Factory Lead Time
    16 Weeks
  • Mount
    Through Hole
  • Mounting Type
    Through Hole
  • Package / Case
    TO-264-3, TO-264AA
  • Number of Pins
    3
  • Weight
    10.000011g
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Tube
  • Series
    HiPerFAST™
  • Published
    2000
  • Pbfree Code
    yes
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    3
  • Subcategory
    Insulated Gate BIP Transistors
  • Max Power Dissipation
    300W
  • Peak Reflow Temperature (Cel)
    NOT SPECIFIED
  • Time@Peak Reflow Temperature-Max (s)
    NOT SPECIFIED
  • Base Part Number
    IXG*50N60
  • Pin Count
    3
  • Qualification Status
    Not Qualified
  • Number of Elements
    1
  • Element Configuration
    Single
  • Case Connection
    COLLECTOR
  • Input Type
    Standard
  • Power - Max
    300W
  • Transistor Application
    MOTOR CONTROL
  • Polarity/Channel Type
    N-CHANNEL
  • Collector Emitter Voltage (VCEO)
    600V
  • Max Collector Current
    75A
  • Reverse Recovery Time
    50 ns
  • Collector Emitter Breakdown Voltage
    600V
  • Turn On Time
    50 ns
  • Test Condition
    480V, 50A, 2.7 Ω, 15V
  • Vce(on) (Max) @ Vge, Ic
    2.5V @ 15V, 50A
  • Turn Off Time-Nom (toff)
    200 ns
  • Gate Charge
    200nC
  • Current - Collector Pulsed (Icm)
    200A
  • Td (on/off) @ 25°C
    50ns/110ns
  • Switching Energy
    3mJ (off)
  • Gate-Emitter Voltage-Max
    20V
  • Gate-Emitter Thr Voltage-Max
    5.5V
  • RoHS Status
    ROHS3 Compliant
Description
IXGK50N60BU1 Overview
This product is manufactured by IXYS and belongs to the category of Transistors - IGBTs - Single. The images we provide are for reference only, for detailed product information please see specification sheet IXGK50N60BU1 or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of IXGK50N60BU1. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
IXGK50N60BU1 More Descriptions
IGBT 600V 75A 300W TO264AA
Product Comparison
The three parts on the right have similar specifications to IXGK50N60BU1.
  • Image
    Part Number
    Manufacturer
    Factory Lead Time
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Weight
    Transistor Element Material
    Operating Temperature
    Packaging
    Series
    Published
    Pbfree Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    Subcategory
    Max Power Dissipation
    Peak Reflow Temperature (Cel)
    Time@Peak Reflow Temperature-Max (s)
    Base Part Number
    Pin Count
    Qualification Status
    Number of Elements
    Element Configuration
    Case Connection
    Input Type
    Power - Max
    Transistor Application
    Polarity/Channel Type
    Collector Emitter Voltage (VCEO)
    Max Collector Current
    Reverse Recovery Time
    Collector Emitter Breakdown Voltage
    Turn On Time
    Test Condition
    Vce(on) (Max) @ Vge, Ic
    Turn Off Time-Nom (toff)
    Gate Charge
    Current - Collector Pulsed (Icm)
    Td (on/off) @ 25°C
    Switching Energy
    Gate-Emitter Voltage-Max
    Gate-Emitter Thr Voltage-Max
    RoHS Status
    Voltage - Collector Emitter Breakdown (Max)
    Collector Emitter Saturation Voltage
    IGBT Type
    Voltage - Rated DC
    Current Rating
    Rise Time
    Lead Free
    View Compare
  • IXGK50N60BU1
    IXGK50N60BU1
    IXYS
    16 Weeks
    Through Hole
    Through Hole
    TO-264-3, TO-264AA
    3
    10.000011g
    SILICON
    -55°C~150°C TJ
    Tube
    HiPerFAST™
    2000
    yes
    Active
    1 (Unlimited)
    3
    Insulated Gate BIP Transistors
    300W
    NOT SPECIFIED
    NOT SPECIFIED
    IXG*50N60
    3
    Not Qualified
    1
    Single
    COLLECTOR
    Standard
    300W
    MOTOR CONTROL
    N-CHANNEL
    600V
    75A
    50 ns
    600V
    50 ns
    480V, 50A, 2.7 Ω, 15V
    2.5V @ 15V, 50A
    200 ns
    200nC
    200A
    50ns/110ns
    3mJ (off)
    20V
    5.5V
    ROHS3 Compliant
    -
    -
    -
    -
    -
    -
    -
    -
  • IXGK35N120B
    IXGK35N120B
    IXYS
    8 Weeks
    Through Hole
    Through Hole
    TO-264-3, TO-264AA
    3
    10.000011g
    SILICON
    -55°C~150°C TJ
    Tube
    HiPerFAST™
    2002
    yes
    Active
    1 (Unlimited)
    3
    Insulated Gate BIP Transistors
    350W
    NOT SPECIFIED
    NOT SPECIFIED
    IXG*35N120
    3
    Not Qualified
    1
    Single
    COLLECTOR
    Standard
    350W
    MOTOR CONTROL
    N-CHANNEL
    1.2kV
    70A
    -
    1.2kV
    86 ns
    960V, 35A, 5 Ω, 15V
    3.3V @ 15V, 35A
    660 ns
    170nC
    140A
    50ns/180ns
    3.8mJ (off)
    20V
    5V
    ROHS3 Compliant
    1200V
    3.3V
    PT
    -
    -
    -
    -
    IXGK50N60BU1 vs IXGK35N120B
  • IXGK50N60C2D1
    IXGK50N60C2D1
    IXYS
    8 Weeks
    Through Hole
    Through Hole
    TO-264-3, TO-264AA
    3
    10.000011g
    SILICON
    -55°C~150°C TJ
    Tube
    HiPerFAST™
    2012
    yes
    Active
    1 (Unlimited)
    3
    -
    480W
    NOT SPECIFIED
    NOT SPECIFIED
    IXG*50N60
    3
    Not Qualified
    1
    Single
    COLLECTOR
    Standard
    480W
    MOTOR CONTROL
    N-CHANNEL
    600V
    75A
    35 ns
    600V
    43 ns
    480V, 40A, 2 Ω, 15V
    2.5V @ 15V, 40A
    230 ns
    138nC
    300A
    18ns/115ns
    380μJ (off)
    -
    -
    ROHS3 Compliant
    -
    2.5V
    PT
    -
    -
    -
    -
    IXGK50N60BU1 vs IXGK50N60C2D1
  • IXGK50N60B
    IXGK50N60B
    IXYS
    -
    Through Hole
    Through Hole
    TO-264-3, TO-264AA
    3
    10.000011g
    SILICON
    -55°C~150°C TJ
    Bulk
    HiPerFAST™
    2000
    yes
    Obsolete
    Not Applicable
    3
    Insulated Gate BIP Transistors
    300W
    NOT SPECIFIED
    NOT SPECIFIED
    IXG*50N60
    3
    Not Qualified
    1
    Single
    COLLECTOR
    Standard
    -
    POWER CONTROL
    N-CHANNEL
    600V
    75A
    -
    600V
    100 ns
    480V, 50A, 2.7 Ω, 15V
    2.3V @ 15V, 50A
    450 ns
    160nC
    200A
    50ns/150ns
    3mJ (off)
    20V
    5V
    RoHS Compliant
    -
    -
    -
    600V
    75A
    50ns
    Lead Free
    IXGK50N60BU1 vs IXGK50N60B
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS
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