IXYS IXGK64N60B3D1

Name: IXGK64N60B3D1
Brand: IXYS
SKU: 3554855-IXGK64N60B3D1
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: IXGK64N60B3D1

Manufacturer:: IXYS

Ventron No:: 3554855-IXGK64N60B3D1

Description:: IGBT 600V 460W TO264

ECAD Model:

Datasheet:: IXGK64N60B3D1

Specifications

IXYS IXGK64N60B3D1 technical specifications, attributes, parameters and parts with similar specifications to IXYS IXGK64N60B3D1.

Factory Lead Time
30 Weeks
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-264-3, TO-264AA
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tube
Series
GenX3™
Published
2008
JESD-609 Code
e1
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
Terminal Finish
TIN SILVER COPPER
Additional Feature
LOW CONDUCTION LOSS
Subcategory
Insulated Gate BIP Transistors
Max Power Dissipation
460W
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Reach Compliance Code
unknown
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED
Pin Count
3
JESD-30 Code
R-PSFM-T3
Qualification Status
Not Qualified
Number of Elements
1
Element Configuration
Single
Power Dissipation
460W
Case Connection
COLLECTOR
Input Type
Standard
Transistor Application
POWER CONTROL
Polarity/Channel Type
N-CHANNEL
Collector Emitter Voltage (VCEO)
600V
Max Collector Current
400A
Reverse Recovery Time
35 ns
Collector Emitter Breakdown Voltage
600V
Collector Emitter Saturation Voltage
600V
Turn On Time
64 ns
Test Condition
480V, 50A, 3 Ω, 15V
Vce(on) (Max) @ Vge, Ic
1.8V @ 15V, 50A
Turn Off Time-Nom (toff)
326 ns
IGBT Type
PT
Gate Charge
168nC
Td (on/off) @ 25°C
25ns/138ns
Switching Energy
1.5mJ (on), 1mJ (off)
Gate-Emitter Voltage-Max
20V
Gate-Emitter Thr Voltage-Max
5V
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free

Description

IXGK64N60B3D1 Overview
This product is manufactured by IXYS and belongs to the category of Transistors - IGBTs - Single. The images we provide are for reference only, for detailed product information please see specification sheet IXGK64N60B3D1 or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of IXGK64N60B3D1. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.

IXGK64N60B3D1 More Descriptions

Trans IGBT Chip N=-CH 600V 64A 460000mW 3-Pin(3 Tab) TO-264
IGBT 600V 460W TO264
Contact for details

Product Comparison

The three parts on the right have similar specifications to IXGK64N60B3D1.

Image

Part Number

Manufacturer

Factory Lead Time

Mount

Mounting Type

Package / Case

Transistor Element Material

Operating Temperature

Packaging

Series

Published

JESD-609 Code

Pbfree Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

Terminal Finish

Additional Feature

Subcategory

Max Power Dissipation

Peak Reflow Temperature (Cel)

Reach Compliance Code

Time@Peak Reflow Temperature-Max (s)

Pin Count

JESD-30 Code

Qualification Status

Number of Elements

Element Configuration

Power Dissipation

Case Connection

Input Type

Transistor Application

Polarity/Channel Type

Collector Emitter Voltage (VCEO)

Max Collector Current

Reverse Recovery Time

Collector Emitter Breakdown Voltage

Collector Emitter Saturation Voltage

Turn On Time

Test Condition

Vce(on) (Max) @ Vge, Ic

Turn Off Time-Nom (toff)

IGBT Type

Gate Charge

Td (on/off) @ 25°C

Switching Energy

Gate-Emitter Voltage-Max

Gate-Emitter Thr Voltage-Max

RoHS Status

Lead Free

Number of Pins

Weight

Base Part Number

Power - Max

Current - Collector Pulsed (Icm)

Supplier Device Package

Voltage - Collector Emitter Breakdown (Max)

View Compare
IXGK64N60B3D1

IXYS

30 Weeks

Through Hole

Through Hole

TO-264-3, TO-264AA

SILICON

-55°C~150°C TJ

Tube

GenX3™

2008

e1

yes

Active

1 (Unlimited)

3

TIN SILVER COPPER

LOW CONDUCTION LOSS

Insulated Gate BIP Transistors

460W

NOT SPECIFIED

unknown

NOT SPECIFIED

3

R-PSFM-T3

Not Qualified

1

Single

460W

COLLECTOR

Standard

POWER CONTROL

N-CHANNEL

600V

400A

35 ns

600V

600V

64 ns

480V, 50A, 3 Ω, 15V

1.8V @ 15V, 50A

326 ns

PT

168nC

25ns/138ns

1.5mJ (on), 1mJ (off)

20V

5V

ROHS3 Compliant

Lead Free

-

-

-

-

-

-

-

-
IXGK50N60BU1

IXYS

16 Weeks

Through Hole

Through Hole

TO-264-3, TO-264AA

SILICON

-55°C~150°C TJ

Tube

HiPerFAST™

2000

-

yes

Active

1 (Unlimited)

3

-

-

Insulated Gate BIP Transistors

300W

NOT SPECIFIED

-

NOT SPECIFIED

3

-

Not Qualified

1

Single

-

COLLECTOR

Standard

MOTOR CONTROL

N-CHANNEL

600V

75A

50 ns

600V

-

50 ns

480V, 50A, 2.7 Ω, 15V

2.5V @ 15V, 50A

200 ns

-

200nC

50ns/110ns

3mJ (off)

20V

5.5V

ROHS3 Compliant

-

3

10.000011g

IXG*50N60

300W

200A

-

-

IXGK64N60B3D1 vs IXGK50N60BU1
IXGK72N60C3H1

IXYS

-

Through Hole

Through Hole

TO-264-3, TO-264AA

-

-

Tube

-

-

-

-

Active

1 (Unlimited)

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

ROHS3 Compliant

-

-

-

IXG*72N60

-

-

TO-264 (IXGK)

-

IXGK64N60B3D1 vs IXGK72N60C3H1
IXGK28N140B3H1

IXYS

8 Weeks

Through Hole

Through Hole

TO-264-3, TO-264AA

SILICON

-55°C~150°C TJ

Tube

GenX3™

2010

e1

yes

Obsolete

1 (Unlimited)

3

Tin/Silver/Copper (Sn/Ag/Cu)

-

Insulated Gate BIP Transistors

300W

NOT SPECIFIED

-

NOT SPECIFIED

3

R-PSFM-T3

Not Qualified

1

Single

300W

COLLECTOR

Standard

POWER CONTROL

N-CHANNEL

1.4kV

60A

350 ns

1.4kV

3V

66 ns

960V, 28A, 5 Ω, 15V

3.6V @ 15V, 28A

915 ns

PT

88nC

16ns/190ns

3.6mJ (on), 3.9mJ (off)

20V

5V

RoHS Compliant

-

-

10.000011g

-

-

150A

-

1400V

IXGK64N60B3D1 vs IXGK28N140B3H1