IXGK72N60A3H1

IXYS IXGK72N60A3H1

Part Number:
IXGK72N60A3H1
Manufacturer:
IXYS
Ventron No:
3072208-IXGK72N60A3H1
Description:
IGBT 600V 75A 540W TO264
ECAD Model:
Datasheet:
IXGK72N60A3H1

Quick Request Quote

Please send RFQ , We will respond immediately.

Part Number
Quantity
Company
E-mail
Phone
Comments
Specifications
IXYS IXGK72N60A3H1 technical specifications, attributes, parameters and parts with similar specifications to IXYS IXGK72N60A3H1.
  • Factory Lead Time
    8 Weeks
  • Mount
    Through Hole
  • Mounting Type
    Through Hole
  • Package / Case
    TO-264-3, TO-264AA
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Tube
  • Series
    GenX3™
  • Published
    2009
  • JESD-609 Code
    e1
  • Pbfree Code
    yes
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    3
  • Terminal Finish
    TIN SILVER COPPER
  • Additional Feature
    LOW CONDUCTION LOSS
  • Subcategory
    Insulated Gate BIP Transistors
  • Max Power Dissipation
    540W
  • Terminal Position
    SINGLE
  • Peak Reflow Temperature (Cel)
    NOT SPECIFIED
  • Reach Compliance Code
    unknown
  • Time@Peak Reflow Temperature-Max (s)
    NOT SPECIFIED
  • Base Part Number
    IXG*72N60
  • Pin Count
    3
  • JESD-30 Code
    R-PSFM-T3
  • Qualification Status
    Not Qualified
  • Number of Elements
    1
  • Configuration
    SINGLE WITH BUILT-IN DIODE
  • Power Dissipation
    540W
  • Case Connection
    COLLECTOR
  • Input Type
    Standard
  • Transistor Application
    POWER CONTROL
  • Polarity/Channel Type
    N-CHANNEL
  • Collector Emitter Voltage (VCEO)
    1.35V
  • Max Collector Current
    75A
  • Reverse Recovery Time
    140ns
  • Collector Emitter Breakdown Voltage
    600V
  • Collector Emitter Saturation Voltage
    1.35V
  • Turn On Time
    63 ns
  • Test Condition
    480V, 50A, 3 Ω, 15V
  • Vce(on) (Max) @ Vge, Ic
    1.35V @ 15V, 60A
  • Turn Off Time-Nom (toff)
    885 ns
  • IGBT Type
    PT
  • Gate Charge
    230nC
  • Current - Collector Pulsed (Icm)
    400A
  • Td (on/off) @ 25°C
    31ns/320ns
  • Switching Energy
    1.4mJ (on), 3.5mJ (off)
  • Gate-Emitter Voltage-Max
    20V
  • Gate-Emitter Thr Voltage-Max
    5V
  • RoHS Status
    ROHS3 Compliant
Description
IXGK72N60A3H1 Overview
This product is manufactured by IXYS and belongs to the category of Transistors - IGBTs - Single. The images we provide are for reference only, for detailed product information please see specification sheet IXGK72N60A3H1 or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of IXGK72N60A3H1. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
IXGK72N60A3H1 More Descriptions
IGBT 600V 75A 540W TO264
Contact for details
Product Comparison
The three parts on the right have similar specifications to IXGK72N60A3H1.
  • Image
    Part Number
    Manufacturer
    Factory Lead Time
    Mount
    Mounting Type
    Package / Case
    Transistor Element Material
    Operating Temperature
    Packaging
    Series
    Published
    JESD-609 Code
    Pbfree Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    Terminal Finish
    Additional Feature
    Subcategory
    Max Power Dissipation
    Terminal Position
    Peak Reflow Temperature (Cel)
    Reach Compliance Code
    Time@Peak Reflow Temperature-Max (s)
    Base Part Number
    Pin Count
    JESD-30 Code
    Qualification Status
    Number of Elements
    Configuration
    Power Dissipation
    Case Connection
    Input Type
    Transistor Application
    Polarity/Channel Type
    Collector Emitter Voltage (VCEO)
    Max Collector Current
    Reverse Recovery Time
    Collector Emitter Breakdown Voltage
    Collector Emitter Saturation Voltage
    Turn On Time
    Test Condition
    Vce(on) (Max) @ Vge, Ic
    Turn Off Time-Nom (toff)
    IGBT Type
    Gate Charge
    Current - Collector Pulsed (Icm)
    Td (on/off) @ 25°C
    Switching Energy
    Gate-Emitter Voltage-Max
    Gate-Emitter Thr Voltage-Max
    RoHS Status
    Supplier Device Package
    Number of Pins
    Weight
    Voltage - Rated DC
    Current Rating
    Element Configuration
    Rise Time
    Lead Free
    Voltage - Collector Emitter Breakdown (Max)
    View Compare
  • IXGK72N60A3H1
    IXGK72N60A3H1
    8 Weeks
    Through Hole
    Through Hole
    TO-264-3, TO-264AA
    SILICON
    -55°C~150°C TJ
    Tube
    GenX3™
    2009
    e1
    yes
    Active
    1 (Unlimited)
    3
    TIN SILVER COPPER
    LOW CONDUCTION LOSS
    Insulated Gate BIP Transistors
    540W
    SINGLE
    NOT SPECIFIED
    unknown
    NOT SPECIFIED
    IXG*72N60
    3
    R-PSFM-T3
    Not Qualified
    1
    SINGLE WITH BUILT-IN DIODE
    540W
    COLLECTOR
    Standard
    POWER CONTROL
    N-CHANNEL
    1.35V
    75A
    140ns
    600V
    1.35V
    63 ns
    480V, 50A, 3 Ω, 15V
    1.35V @ 15V, 60A
    885 ns
    PT
    230nC
    400A
    31ns/320ns
    1.4mJ (on), 3.5mJ (off)
    20V
    5V
    ROHS3 Compliant
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • IXGK72N60C3H1
    -
    Through Hole
    Through Hole
    TO-264-3, TO-264AA
    -
    -
    Tube
    -
    -
    -
    -
    Active
    1 (Unlimited)
    -
    -
    -
    -
    -
    -
    -
    -
    -
    IXG*72N60
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    ROHS3 Compliant
    TO-264 (IXGK)
    -
    -
    -
    -
    -
    -
    -
    -
  • IXGK50N60B
    -
    Through Hole
    Through Hole
    TO-264-3, TO-264AA
    SILICON
    -55°C~150°C TJ
    Bulk
    HiPerFAST™
    2000
    -
    yes
    Obsolete
    Not Applicable
    3
    -
    -
    Insulated Gate BIP Transistors
    300W
    -
    NOT SPECIFIED
    -
    NOT SPECIFIED
    IXG*50N60
    3
    -
    Not Qualified
    1
    -
    -
    COLLECTOR
    Standard
    POWER CONTROL
    N-CHANNEL
    600V
    75A
    -
    600V
    -
    100 ns
    480V, 50A, 2.7 Ω, 15V
    2.3V @ 15V, 50A
    450 ns
    -
    160nC
    200A
    50ns/150ns
    3mJ (off)
    20V
    5V
    RoHS Compliant
    -
    3
    10.000011g
    600V
    75A
    Single
    50ns
    Lead Free
    -
  • IXGK28N140B3H1
    8 Weeks
    Through Hole
    Through Hole
    TO-264-3, TO-264AA
    SILICON
    -55°C~150°C TJ
    Tube
    GenX3™
    2010
    e1
    yes
    Obsolete
    1 (Unlimited)
    3
    Tin/Silver/Copper (Sn/Ag/Cu)
    -
    Insulated Gate BIP Transistors
    300W
    -
    NOT SPECIFIED
    -
    NOT SPECIFIED
    -
    3
    R-PSFM-T3
    Not Qualified
    1
    -
    300W
    COLLECTOR
    Standard
    POWER CONTROL
    N-CHANNEL
    1.4kV
    60A
    350 ns
    1.4kV
    3V
    66 ns
    960V, 28A, 5 Ω, 15V
    3.6V @ 15V, 28A
    915 ns
    PT
    88nC
    150A
    16ns/190ns
    3.6mJ (on), 3.9mJ (off)
    20V
    5V
    RoHS Compliant
    -
    -
    10.000011g
    -
    -
    Single
    -
    -
    1400V
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

Latest News

  • cost

    Help you to save your cost and time.

  • package

    Reliable package for your goods.

  • fast

    Fast Reliable Delivery to save time.

  • service

    Quality premium after-sale service.