IXYS IXGK72N60A3H1
- Part Number:
- IXGK72N60A3H1
- Manufacturer:
- IXYS
- Ventron No:
- 3072208-IXGK72N60A3H1
- Description:
- IGBT 600V 75A 540W TO264
- Datasheet:
- IXGK72N60A3H1
IXYS IXGK72N60A3H1 technical specifications, attributes, parameters and parts with similar specifications to IXYS IXGK72N60A3H1.
- Factory Lead Time8 Weeks
- MountThrough Hole
- Mounting TypeThrough Hole
- Package / CaseTO-264-3, TO-264AA
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTube
- SeriesGenX3™
- Published2009
- JESD-609 Codee1
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- Terminal FinishTIN SILVER COPPER
- Additional FeatureLOW CONDUCTION LOSS
- SubcategoryInsulated Gate BIP Transistors
- Max Power Dissipation540W
- Terminal PositionSINGLE
- Peak Reflow Temperature (Cel)NOT SPECIFIED
- Reach Compliance Codeunknown
- Time@Peak Reflow Temperature-Max (s)NOT SPECIFIED
- Base Part NumberIXG*72N60
- Pin Count3
- JESD-30 CodeR-PSFM-T3
- Qualification StatusNot Qualified
- Number of Elements1
- ConfigurationSINGLE WITH BUILT-IN DIODE
- Power Dissipation540W
- Case ConnectionCOLLECTOR
- Input TypeStandard
- Transistor ApplicationPOWER CONTROL
- Polarity/Channel TypeN-CHANNEL
- Collector Emitter Voltage (VCEO)1.35V
- Max Collector Current75A
- Reverse Recovery Time140ns
- Collector Emitter Breakdown Voltage600V
- Collector Emitter Saturation Voltage1.35V
- Turn On Time63 ns
- Test Condition480V, 50A, 3 Ω, 15V
- Vce(on) (Max) @ Vge, Ic1.35V @ 15V, 60A
- Turn Off Time-Nom (toff)885 ns
- IGBT TypePT
- Gate Charge230nC
- Current - Collector Pulsed (Icm)400A
- Td (on/off) @ 25°C31ns/320ns
- Switching Energy1.4mJ (on), 3.5mJ (off)
- Gate-Emitter Voltage-Max20V
- Gate-Emitter Thr Voltage-Max5V
- RoHS StatusROHS3 Compliant
IXGK72N60A3H1 Overview
This product is manufactured by IXYS and belongs to the category of Transistors - IGBTs - Single. The images we provide are for reference only, for detailed product information please see specification sheet IXGK72N60A3H1 or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of IXGK72N60A3H1. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
This product is manufactured by IXYS and belongs to the category of Transistors - IGBTs - Single. The images we provide are for reference only, for detailed product information please see specification sheet IXGK72N60A3H1 or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of IXGK72N60A3H1. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
IXGK72N60A3H1 More Descriptions
IGBT 600V 75A 540W TO264
Contact for details
Contact for details
The three parts on the right have similar specifications to IXGK72N60A3H1.
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ImagePart NumberManufacturerFactory Lead TimeMountMounting TypePackage / CaseTransistor Element MaterialOperating TemperaturePackagingSeriesPublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsTerminal FinishAdditional FeatureSubcategoryMax Power DissipationTerminal PositionPeak Reflow Temperature (Cel)Reach Compliance CodeTime@Peak Reflow Temperature-Max (s)Base Part NumberPin CountJESD-30 CodeQualification StatusNumber of ElementsConfigurationPower DissipationCase ConnectionInput TypeTransistor ApplicationPolarity/Channel TypeCollector Emitter Voltage (VCEO)Max Collector CurrentReverse Recovery TimeCollector Emitter Breakdown VoltageCollector Emitter Saturation VoltageTurn On TimeTest ConditionVce(on) (Max) @ Vge, IcTurn Off Time-Nom (toff)IGBT TypeGate ChargeCurrent - Collector Pulsed (Icm)Td (on/off) @ 25°CSwitching EnergyGate-Emitter Voltage-MaxGate-Emitter Thr Voltage-MaxRoHS StatusSupplier Device PackageNumber of PinsWeightVoltage - Rated DCCurrent RatingElement ConfigurationRise TimeLead FreeVoltage - Collector Emitter Breakdown (Max)View Compare
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IXGK72N60A3H18 WeeksThrough HoleThrough HoleTO-264-3, TO-264AASILICON-55°C~150°C TJTubeGenX3™2009e1yesActive1 (Unlimited)3TIN SILVER COPPERLOW CONDUCTION LOSSInsulated Gate BIP Transistors540WSINGLENOT SPECIFIEDunknownNOT SPECIFIEDIXG*72N603R-PSFM-T3Not Qualified1SINGLE WITH BUILT-IN DIODE540WCOLLECTORStandardPOWER CONTROLN-CHANNEL1.35V75A140ns600V1.35V63 ns480V, 50A, 3 Ω, 15V1.35V @ 15V, 60A885 nsPT230nC400A31ns/320ns1.4mJ (on), 3.5mJ (off)20V5VROHS3 Compliant----------
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-Through HoleThrough HoleTO-264-3, TO-264AA--Tube----Active1 (Unlimited)---------IXG*72N60--------------------------ROHS3 CompliantTO-264 (IXGK)--------
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-Through HoleThrough HoleTO-264-3, TO-264AASILICON-55°C~150°C TJBulkHiPerFAST™2000-yesObsoleteNot Applicable3--Insulated Gate BIP Transistors300W-NOT SPECIFIED-NOT SPECIFIEDIXG*50N603-Not Qualified1--COLLECTORStandardPOWER CONTROLN-CHANNEL600V75A-600V-100 ns480V, 50A, 2.7 Ω, 15V2.3V @ 15V, 50A450 ns-160nC200A50ns/150ns3mJ (off)20V5VRoHS Compliant-310.000011g600V75ASingle50nsLead Free-
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8 WeeksThrough HoleThrough HoleTO-264-3, TO-264AASILICON-55°C~150°C TJTubeGenX3™2010e1yesObsolete1 (Unlimited)3Tin/Silver/Copper (Sn/Ag/Cu)-Insulated Gate BIP Transistors300W-NOT SPECIFIED-NOT SPECIFIED-3R-PSFM-T3Not Qualified1-300WCOLLECTORStandardPOWER CONTROLN-CHANNEL1.4kV60A350 ns1.4kV3V66 ns960V, 28A, 5 Ω, 15V3.6V @ 15V, 28A915 nsPT88nC150A16ns/190ns3.6mJ (on), 3.9mJ (off)20V5VRoHS Compliant--10.000011g--Single--1400V
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