Infineon Technologies IRF3707ZPBF
- Part Number:
- IRF3707ZPBF
- Manufacturer:
- Infineon Technologies
- Ventron No:
- 2853766-IRF3707ZPBF
- Description:
- MOSFET N-CH 30V 59A TO-220AB
- Datasheet:
- IRF3707Z (S,L) PbF
Infineon Technologies IRF3707ZPBF technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IRF3707ZPBF.
- MountThrough Hole
- Mounting TypeThrough Hole
- Package / CaseTO-220-3
- Number of Pins3
- Supplier Device PackageTO-220AB
- Operating Temperature-55°C~175°C TJ
- PackagingTube
- SeriesHEXFET®
- Published2003
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Resistance9.5Ohm
- Max Operating Temperature175°C
- Min Operating Temperature-55°C
- Voltage - Rated DC30V
- TechnologyMOSFET (Metal Oxide)
- Current Rating59A
- Number of Elements1
- Power Dissipation-Max57W Tc
- Power Dissipation57W
- Turn On Delay Time9.8 ns
- FET TypeN-Channel
- Rds On (Max) @ Id, Vgs9.5mOhm @ 21A, 10V
- Vgs(th) (Max) @ Id2.25V @ 25μA
- Input Capacitance (Ciss) (Max) @ Vds1210pF @ 15V
- Current - Continuous Drain (Id) @ 25°C59A Tc
- Gate Charge (Qg) (Max) @ Vgs15nC @ 4.5V
- Rise Time41ns
- Drain to Source Voltage (Vdss)30V
- Drive Voltage (Max Rds On,Min Rds On)4.5V 10V
- Vgs (Max)±20V
- Fall Time (Typ)3.6 ns
- Turn-Off Delay Time12 ns
- Continuous Drain Current (ID)59A
- Threshold Voltage1.8V
- Gate to Source Voltage (Vgs)20V
- Drain to Source Breakdown Voltage30V
- Dual Supply Voltage30V
- Input Capacitance1.21nF
- Recovery Time21 ns
- Drain to Source Resistance12.5mOhm
- Rds On Max9.5 mΩ
- Nominal Vgs1.8 V
- Height8.763mm
- Length10.5156mm
- Width4.69mm
- REACH SVHCNo SVHC
- Radiation HardeningNo
- RoHS StatusRoHS Compliant
- Lead FreeLead Free
IRF3707ZPBF Overview
With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 1210pF @ 15V.A device's drain current is its maximum continuous current, and this device has a continuous drain current (ID) of 59A.With a drain-source breakdown voltage of 30V and a drain-source current flow rate of 1, this device has a drain-source breakdown voltage of 30V.The turn-off delay time is the amount of time it takes to charge the input capacitance of the device before drain current conduction can begin, and it is 12 ns.When a specific gate-to-source voltage (VGS) is applied to bias a MOSFET into the on state, a drain-to-source resistance of 12.5mOhm exists between the drain and source.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 9.8 ns.Single MOSFETs transistor is the voltage that falls across the gate-source terminal of a FET transistor that is called the gate-source voltage, VGS.1.8V is the threshold voltage at which an electrical device activates any of its operations.Single MOSFETs transistor is necessary to have a drain to source voltage (Vdss) of 30V.Using drive voltage (4.5V 10V) reduces this device's overall power consumption.
IRF3707ZPBF Features
a continuous drain current (ID) of 59A
a drain-to-source breakdown voltage of 30V voltage
the turn-off delay time is 12 ns
single MOSFETs transistor is 12.5mOhm
a threshold voltage of 1.8V
a 30V drain to source voltage (Vdss)
IRF3707ZPBF Applications
There are a lot of Infineon Technologies
IRF3707ZPBF applications of single MOSFETs transistors.
Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 1210pF @ 15V.A device's drain current is its maximum continuous current, and this device has a continuous drain current (ID) of 59A.With a drain-source breakdown voltage of 30V and a drain-source current flow rate of 1, this device has a drain-source breakdown voltage of 30V.The turn-off delay time is the amount of time it takes to charge the input capacitance of the device before drain current conduction can begin, and it is 12 ns.When a specific gate-to-source voltage (VGS) is applied to bias a MOSFET into the on state, a drain-to-source resistance of 12.5mOhm exists between the drain and source.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 9.8 ns.Single MOSFETs transistor is the voltage that falls across the gate-source terminal of a FET transistor that is called the gate-source voltage, VGS.1.8V is the threshold voltage at which an electrical device activates any of its operations.Single MOSFETs transistor is necessary to have a drain to source voltage (Vdss) of 30V.Using drive voltage (4.5V 10V) reduces this device's overall power consumption.
IRF3707ZPBF Features
a continuous drain current (ID) of 59A
a drain-to-source breakdown voltage of 30V voltage
the turn-off delay time is 12 ns
single MOSFETs transistor is 12.5mOhm
a threshold voltage of 1.8V
a 30V drain to source voltage (Vdss)
IRF3707ZPBF Applications
There are a lot of Infineon Technologies
IRF3707ZPBF applications of single MOSFETs transistors.
Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
IRF3707ZPBF More Descriptions
MOSFET, N Ch., 30V, 59A, 9.5 MOHM, 9.7 NC QG, TO-220AB, Pb-Free
Trans MOSFET N-CH 30V 59A 3-Pin(3 Tab) TO-220AB / MOSFET N-CH 30V 59A TO-220AB
30V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
MOSFET Operating temperature: -55...175 °C Housing type: TO-220AB Polarity: N Power dissipation: 28 W
MOSFET, N, 30V, 59A, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:59A; Drain Source Voltage Vds:30V; On Resistance Rds(on):9.5mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.8V; Power Dissipation Pd:57W; Transistor Case Style:TO-220AB; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:59A; Junction to Case Thermal Resistance A:2.65°C/W; On State resistance @ Vgs = 10V:9.5ohm; Package / Case:TO-220AB; Power Dissipation Pd:57W; Power Dissipation Pd:57W; Pulse Current Idm:230A; Termination Type:Through Hole; Voltage Vds Typ:30V; Voltage Vgs Max:1.8V; Voltage Vgs Rds on Measurement:10V
Trans MOSFET N-CH 30V 59A 3-Pin(3 Tab) TO-220AB / MOSFET N-CH 30V 59A TO-220AB
30V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
MOSFET Operating temperature: -55...175 °C Housing type: TO-220AB Polarity: N Power dissipation: 28 W
MOSFET, N, 30V, 59A, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:59A; Drain Source Voltage Vds:30V; On Resistance Rds(on):9.5mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.8V; Power Dissipation Pd:57W; Transistor Case Style:TO-220AB; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:59A; Junction to Case Thermal Resistance A:2.65°C/W; On State resistance @ Vgs = 10V:9.5ohm; Package / Case:TO-220AB; Power Dissipation Pd:57W; Power Dissipation Pd:57W; Pulse Current Idm:230A; Termination Type:Through Hole; Voltage Vds Typ:30V; Voltage Vgs Max:1.8V; Voltage Vgs Rds on Measurement:10V
The three parts on the right have similar specifications to IRF3707ZPBF.
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ImagePart NumberManufacturerMountMounting TypePackage / CaseNumber of PinsSupplier Device PackageOperating TemperaturePackagingSeriesPublishedPart StatusMoisture Sensitivity Level (MSL)ResistanceMax Operating TemperatureMin Operating TemperatureVoltage - Rated DCTechnologyCurrent RatingNumber of ElementsPower Dissipation-MaxPower DissipationTurn On Delay TimeFET TypeRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsRise TimeDrain to Source Voltage (Vdss)Drive Voltage (Max Rds On,Min Rds On)Vgs (Max)Fall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)Threshold VoltageGate to Source Voltage (Vgs)Drain to Source Breakdown VoltageDual Supply VoltageInput CapacitanceRecovery TimeDrain to Source ResistanceRds On MaxNominal VgsHeightLengthWidthREACH SVHCRadiation HardeningRoHS StatusLead FreeElement ConfigurationView Compare
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IRF3707ZPBFThrough HoleThrough HoleTO-220-33TO-220AB-55°C~175°C TJTubeHEXFET®2003Obsolete1 (Unlimited)9.5Ohm175°C-55°C30VMOSFET (Metal Oxide)59A157W Tc57W9.8 nsN-Channel9.5mOhm @ 21A, 10V2.25V @ 25μA1210pF @ 15V59A Tc15nC @ 4.5V41ns30V4.5V 10V±20V3.6 ns12 ns59A1.8V20V30V30V1.21nF21 ns12.5mOhm9.5 mΩ1.8 V8.763mm10.5156mm4.69mmNo SVHCNoRoHS CompliantLead Free--
-
Surface MountSurface MountTO-263-3, D2Pak (2 Leads Tab), TO-263AB3D2PAK-55°C~175°C TJTape & Reel (TR)HEXFET®2004Obsolete1 (Unlimited)-175°C-55°C-MOSFET (Metal Oxide)--88W Tc88W-N-Channel8.5mOhm @ 15A, 10V2V @ 250μA2410pF @ 10V77A Tc35nC @ 4.5V87ns20V2.8V 10V±12V4.8 ns17 ns77A-12V20V-2.41nF-10.5mOhm8.5 mΩ------RoHS Compliant-Single
-
-Surface MountTO-263-3, D2Pak (2 Leads Tab), TO-263AB---55°C~175°C TJTape & Reel (TR)HEXFET®2004Obsolete1 (Unlimited)----MOSFET (Metal Oxide)--88W Tc--N-Channel8.5m Ω @ 15A, 10V2V @ 250μA2410pF @ 10V77A Tc35nC @ 4.5V-20V2.8V 10V±12V-----------------Non-RoHS Compliant--
-
-Surface MountTO-263-3, D2Pak (2 Leads Tab), TO-263AB-D2PAK-55°C~175°C TJTape & Reel (TR)HEXFET®2000Obsolete1 (Unlimited)----MOSFET (Metal Oxide)--87W Tc--N-Channel9mOhm @ 15A, 10V3V @ 250μA1996pF @ 10V77A Tc19nC @ 4.5V-20V4.5V 10V±20V-----------------Non-RoHS Compliant--
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