IRF3707ZPBF

Infineon Technologies IRF3707ZPBF

Part Number:
IRF3707ZPBF
Manufacturer:
Infineon Technologies
Ventron No:
2853766-IRF3707ZPBF
Description:
MOSFET N-CH 30V 59A TO-220AB
ECAD Model:
Datasheet:
IRF3707Z (S,L) PbF

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Specifications
Infineon Technologies IRF3707ZPBF technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IRF3707ZPBF.
  • Mount
    Through Hole
  • Mounting Type
    Through Hole
  • Package / Case
    TO-220-3
  • Number of Pins
    3
  • Supplier Device Package
    TO-220AB
  • Operating Temperature
    -55°C~175°C TJ
  • Packaging
    Tube
  • Series
    HEXFET®
  • Published
    2003
  • Part Status
    Obsolete
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Resistance
    9.5Ohm
  • Max Operating Temperature
    175°C
  • Min Operating Temperature
    -55°C
  • Voltage - Rated DC
    30V
  • Technology
    MOSFET (Metal Oxide)
  • Current Rating
    59A
  • Number of Elements
    1
  • Power Dissipation-Max
    57W Tc
  • Power Dissipation
    57W
  • Turn On Delay Time
    9.8 ns
  • FET Type
    N-Channel
  • Rds On (Max) @ Id, Vgs
    9.5mOhm @ 21A, 10V
  • Vgs(th) (Max) @ Id
    2.25V @ 25μA
  • Input Capacitance (Ciss) (Max) @ Vds
    1210pF @ 15V
  • Current - Continuous Drain (Id) @ 25°C
    59A Tc
  • Gate Charge (Qg) (Max) @ Vgs
    15nC @ 4.5V
  • Rise Time
    41ns
  • Drain to Source Voltage (Vdss)
    30V
  • Drive Voltage (Max Rds On,Min Rds On)
    4.5V 10V
  • Vgs (Max)
    ±20V
  • Fall Time (Typ)
    3.6 ns
  • Turn-Off Delay Time
    12 ns
  • Continuous Drain Current (ID)
    59A
  • Threshold Voltage
    1.8V
  • Gate to Source Voltage (Vgs)
    20V
  • Drain to Source Breakdown Voltage
    30V
  • Dual Supply Voltage
    30V
  • Input Capacitance
    1.21nF
  • Recovery Time
    21 ns
  • Drain to Source Resistance
    12.5mOhm
  • Rds On Max
    9.5 mΩ
  • Nominal Vgs
    1.8 V
  • Height
    8.763mm
  • Length
    10.5156mm
  • Width
    4.69mm
  • REACH SVHC
    No SVHC
  • Radiation Hardening
    No
  • RoHS Status
    RoHS Compliant
  • Lead Free
    Lead Free
Description
IRF3707ZPBF Overview
With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 1210pF @ 15V.A device's drain current is its maximum continuous current, and this device has a continuous drain current (ID) of 59A.With a drain-source breakdown voltage of 30V and a drain-source current flow rate of 1, this device has a drain-source breakdown voltage of 30V.The turn-off delay time is the amount of time it takes to charge the input capacitance of the device before drain current conduction can begin, and it is 12 ns.When a specific gate-to-source voltage (VGS) is applied to bias a MOSFET into the on state, a drain-to-source resistance of 12.5mOhm exists between the drain and source.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 9.8 ns.Single MOSFETs transistor is the voltage that falls across the gate-source terminal of a FET transistor that is called the gate-source voltage, VGS.1.8V is the threshold voltage at which an electrical device activates any of its operations.Single MOSFETs transistor is necessary to have a drain to source voltage (Vdss) of 30V.Using drive voltage (4.5V 10V) reduces this device's overall power consumption.

IRF3707ZPBF Features
a continuous drain current (ID) of 59A
a drain-to-source breakdown voltage of 30V voltage
the turn-off delay time is 12 ns
single MOSFETs transistor is 12.5mOhm
a threshold voltage of 1.8V
a 30V drain to source voltage (Vdss)


IRF3707ZPBF Applications
There are a lot of Infineon Technologies
IRF3707ZPBF applications of single MOSFETs transistors.


Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
IRF3707ZPBF More Descriptions
MOSFET, N Ch., 30V, 59A, 9.5 MOHM, 9.7 NC QG, TO-220AB, Pb-Free
Trans MOSFET N-CH 30V 59A 3-Pin(3 Tab) TO-220AB / MOSFET N-CH 30V 59A TO-220AB
30V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
MOSFET Operating temperature: -55...175 °C Housing type: TO-220AB Polarity: N Power dissipation: 28 W
MOSFET, N, 30V, 59A, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:59A; Drain Source Voltage Vds:30V; On Resistance Rds(on):9.5mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.8V; Power Dissipation Pd:57W; Transistor Case Style:TO-220AB; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:59A; Junction to Case Thermal Resistance A:2.65°C/W; On State resistance @ Vgs = 10V:9.5ohm; Package / Case:TO-220AB; Power Dissipation Pd:57W; Power Dissipation Pd:57W; Pulse Current Idm:230A; Termination Type:Through Hole; Voltage Vds Typ:30V; Voltage Vgs Max:1.8V; Voltage Vgs Rds on Measurement:10V
Product Comparison
The three parts on the right have similar specifications to IRF3707ZPBF.
  • Image
    Part Number
    Manufacturer
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Supplier Device Package
    Operating Temperature
    Packaging
    Series
    Published
    Part Status
    Moisture Sensitivity Level (MSL)
    Resistance
    Max Operating Temperature
    Min Operating Temperature
    Voltage - Rated DC
    Technology
    Current Rating
    Number of Elements
    Power Dissipation-Max
    Power Dissipation
    Turn On Delay Time
    FET Type
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Input Capacitance (Ciss) (Max) @ Vds
    Current - Continuous Drain (Id) @ 25°C
    Gate Charge (Qg) (Max) @ Vgs
    Rise Time
    Drain to Source Voltage (Vdss)
    Drive Voltage (Max Rds On,Min Rds On)
    Vgs (Max)
    Fall Time (Typ)
    Turn-Off Delay Time
    Continuous Drain Current (ID)
    Threshold Voltage
    Gate to Source Voltage (Vgs)
    Drain to Source Breakdown Voltage
    Dual Supply Voltage
    Input Capacitance
    Recovery Time
    Drain to Source Resistance
    Rds On Max
    Nominal Vgs
    Height
    Length
    Width
    REACH SVHC
    Radiation Hardening
    RoHS Status
    Lead Free
    Element Configuration
    View Compare
  • IRF3707ZPBF
    IRF3707ZPBF
    Through Hole
    Through Hole
    TO-220-3
    3
    TO-220AB
    -55°C~175°C TJ
    Tube
    HEXFET®
    2003
    Obsolete
    1 (Unlimited)
    9.5Ohm
    175°C
    -55°C
    30V
    MOSFET (Metal Oxide)
    59A
    1
    57W Tc
    57W
    9.8 ns
    N-Channel
    9.5mOhm @ 21A, 10V
    2.25V @ 25μA
    1210pF @ 15V
    59A Tc
    15nC @ 4.5V
    41ns
    30V
    4.5V 10V
    ±20V
    3.6 ns
    12 ns
    59A
    1.8V
    20V
    30V
    30V
    1.21nF
    21 ns
    12.5mOhm
    9.5 mΩ
    1.8 V
    8.763mm
    10.5156mm
    4.69mm
    No SVHC
    No
    RoHS Compliant
    Lead Free
    -
    -
  • IRF3706STRLPBF
    Surface Mount
    Surface Mount
    TO-263-3, D2Pak (2 Leads Tab), TO-263AB
    3
    D2PAK
    -55°C~175°C TJ
    Tape & Reel (TR)
    HEXFET®
    2004
    Obsolete
    1 (Unlimited)
    -
    175°C
    -55°C
    -
    MOSFET (Metal Oxide)
    -
    -
    88W Tc
    88W
    -
    N-Channel
    8.5mOhm @ 15A, 10V
    2V @ 250μA
    2410pF @ 10V
    77A Tc
    35nC @ 4.5V
    87ns
    20V
    2.8V 10V
    ±12V
    4.8 ns
    17 ns
    77A
    -
    12V
    20V
    -
    2.41nF
    -
    10.5mOhm
    8.5 mΩ
    -
    -
    -
    -
    -
    -
    RoHS Compliant
    -
    Single
  • IRF3706STRL
    -
    Surface Mount
    TO-263-3, D2Pak (2 Leads Tab), TO-263AB
    -
    -
    -55°C~175°C TJ
    Tape & Reel (TR)
    HEXFET®
    2004
    Obsolete
    1 (Unlimited)
    -
    -
    -
    -
    MOSFET (Metal Oxide)
    -
    -
    88W Tc
    -
    -
    N-Channel
    8.5m Ω @ 15A, 10V
    2V @ 250μA
    2410pF @ 10V
    77A Tc
    35nC @ 4.5V
    -
    20V
    2.8V 10V
    ±12V
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    Non-RoHS Compliant
    -
    -
  • IRF3704STRL
    -
    Surface Mount
    TO-263-3, D2Pak (2 Leads Tab), TO-263AB
    -
    D2PAK
    -55°C~175°C TJ
    Tape & Reel (TR)
    HEXFET®
    2000
    Obsolete
    1 (Unlimited)
    -
    -
    -
    -
    MOSFET (Metal Oxide)
    -
    -
    87W Tc
    -
    -
    N-Channel
    9mOhm @ 15A, 10V
    3V @ 250μA
    1996pF @ 10V
    77A Tc
    19nC @ 4.5V
    -
    20V
    4.5V 10V
    ±20V
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    Non-RoHS Compliant
    -
    -
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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