Infineon Technologies IRF3315
- Part Number:
- IRF3315
- Manufacturer:
- Infineon Technologies
- Ventron No:
- 2853652-IRF3315
- Description:
- MOSFET N-CH 150V 27A TO-220AB
- ECAD Model:
-
- Datasheet:
- IRF3315
Infineon Technologies IRF3315 technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IRF3315.
- Mounting TypeThrough Hole
- Package / CaseTO-220-3
- Surface MountNO
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~175°C TJ
- PackagingTube
- SeriesHEXFET®
- Published1997
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- TechnologyMOSFET (Metal Oxide)
- Terminal PositionSINGLE
- Peak Reflow Temperature (Cel)NOT SPECIFIED
- Time@Peak Reflow Temperature-Max (s)NOT SPECIFIED
- JESD-30 CodeR-PSFM-T3
- Qualification StatusNot Qualified
- Number of Elements1
- ConfigurationSINGLE WITH BUILT-IN DIODE
- Power Dissipation-Max136W Tc
- Operating ModeENHANCEMENT MODE
- Case ConnectionDRAIN
- FET TypeN-Channel
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs70m Ω @ 12A, 10V
- Vgs(th) (Max) @ Id4V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds1300pF @ 25V
- Current - Continuous Drain (Id) @ 25°C27A Tc
- Gate Charge (Qg) (Max) @ Vgs95nC @ 10V
- Drain to Source Voltage (Vdss)150V
- Drive Voltage (Max Rds On,Min Rds On)10V
- Vgs (Max)±20V
- JEDEC-95 CodeTO-220AB
- Drain Current-Max (Abs) (ID)27A
- Drain-source On Resistance-Max0.07Ohm
- Pulsed Drain Current-Max (IDM)108A
- DS Breakdown Voltage-Min150V
- Avalanche Energy Rating (Eas)350 mJ
- RoHS StatusNon-RoHS Compliant
IRF3315 Description
The FDFS6N754 combines the exceptional performance of Farichild's PowerTrench MOSFET technology with a very low forward voltage drop Schottky barrier rectifier in a SO-8 package. This device is designed specifically as a single package solution for DC to DC converters. It features a fast switching, low gate charge MOSFET with very low on-state resistance. The independently connected Schottky diode allows its use in a variety of DC/DC converter topologies.
IRF3315 Features Max fos(on)= 56m2 atVGs=OV, lb= 4A Max rDs(on)= 75mQ2 atVss= 4.5V,Ib= 3.5A Vp< 0.45V @ 2A Vp< 0.28V @ 100mA Schotky and MOSFET incorporated into single power surface mount SO-8 package Electically independent Schotky and MOSFET pinout for deslign fexibilily Low Gate Charge (Qg = 4nC) Low Miller Charge
IRF3315 Applications DC/DC converters
IRF3315 Features Max fos(on)= 56m2 atVGs=OV, lb= 4A Max rDs(on)= 75mQ2 atVss= 4.5V,Ib= 3.5A Vp< 0.45V @ 2A Vp< 0.28V @ 100mA Schotky and MOSFET incorporated into single power surface mount SO-8 package Electically independent Schotky and MOSFET pinout for deslign fexibilily Low Gate Charge (Qg = 4nC) Low Miller Charge
IRF3315 Applications DC/DC converters
The three parts on the right have similar specifications to IRF3315.
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ImagePart NumberManufacturerMounting TypePackage / CaseSurface MountTransistor Element MaterialOperating TemperaturePackagingSeriesPublishedPart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeTechnologyTerminal PositionPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)JESD-30 CodeQualification StatusNumber of ElementsConfigurationPower Dissipation-MaxOperating ModeCase ConnectionFET TypeTransistor ApplicationRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsDrain to Source Voltage (Vdss)Drive Voltage (Max Rds On,Min Rds On)Vgs (Max)JEDEC-95 CodeDrain Current-Max (Abs) (ID)Drain-source On Resistance-MaxPulsed Drain Current-Max (IDM)DS Breakdown Voltage-MinAvalanche Energy Rating (Eas)RoHS StatusSupplier Device PackageMountNumber of PinsMax Operating TemperatureMin Operating TemperatureElement ConfigurationPower DissipationRise TimeFall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)Gate to Source Voltage (Vgs)Drain to Source Breakdown VoltageInput CapacitanceDrain to Source ResistanceRds On MaxAdditional FeatureView Compare
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IRF3315Through HoleTO-220-3NOSILICON-55°C~175°C TJTubeHEXFET®1997Obsolete1 (Unlimited)3EAR99MOSFET (Metal Oxide)SINGLENOT SPECIFIEDNOT SPECIFIEDR-PSFM-T3Not Qualified1SINGLE WITH BUILT-IN DIODE136W TcENHANCEMENT MODEDRAINN-ChannelSWITCHING70m Ω @ 12A, 10V4V @ 250μA1300pF @ 25V27A Tc95nC @ 10V150V10V±20VTO-220AB27A0.07Ohm108A150V350 mJNon-RoHS Compliant------------------ -
Surface MountTO-263-3, D2Pak (2 Leads Tab), TO-263AB---55°C~175°C TJTape & Reel (TR)HEXFET®2004Obsolete1 (Unlimited)--MOSFET (Metal Oxide)-------57W Tc--N-Channel-7.9mOhm @ 21A, 10V2.55V @ 250μA1220pF @ 10V67A Tc13nC @ 4.5V20V4.5V 10V±20V-------D2PAK----------------
-
Surface MountTO-263-3, D2Pak (2 Leads Tab), TO-263AB---55°C~175°C TJTape & Reel (TR)HEXFET®2004Obsolete1 (Unlimited)--MOSFET (Metal Oxide)-------88W Tc--N-Channel-8.5mOhm @ 15A, 10V2V @ 250μA2410pF @ 10V77A Tc35nC @ 4.5V20V2.8V 10V±12V------RoHS CompliantD2PAKSurface Mount3175°C-55°CSingle88W87ns4.8 ns17 ns77A12V20V2.41nF10.5mOhm8.5 mΩ-
-
Through HoleTO-220-3NOSILICON-55°C~175°C TJTubeHEXFET®2004Obsolete1 (Unlimited)3EAR99MOSFET (Metal Oxide)SINGLENOT SPECIFIEDNOT SPECIFIEDR-PSFM-T3Not Qualified1SINGLE WITH BUILT-IN DIODE330W TcENHANCEMENT MODEDRAINN-ChannelSWITCHING8m Ω @ 75A, 10V4V @ 250μA3650pF @ 25V75A Tc150nC @ 10V55V10V±20VTO-220AB75A0.008Ohm560A55V470 mJNon-RoHS Compliant----------------AVALANCHE RATED
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