Infineon Technologies IRF3205STRRPBF

Name: IRF3205STRRPBF
Brand: Infineon Technologies
SKU: 2489136-IRF3205STRRPBF
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: IRF3205STRRPBF

Manufacturer:: Infineon Technologies

Ventron No:: 2489136-IRF3205STRRPBF

Description:: MOSFET N-CH 55V 110A D2PAK

ECAD Model:

Datasheet:: IRF3205STRRPBF

Specifications

Infineon Technologies IRF3205STRRPBF technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IRF3205STRRPBF.

Factory Lead Time
14 Weeks
Mounting Type
Surface Mount
Package / Case
TO-263-3, D2Pak (2 Leads Tab), TO-263AB
Surface Mount
YES
Transistor Element Material
SILICON
Operating Temperature
-55°C~175°C TJ
Packaging
Tape & Reel (TR)
Series
HEXFET®
Published
2001
JESD-609 Code
e3
Part Status
Not For New Designs
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
2
ECCN Code
EAR99
Terminal Finish
Matte Tin (Sn) - with Nickel (Ni) barrier
Additional Feature
AVALANCHE RATED, HIGH RELIABILITY, ULTRA LOW RESISTANCE
Subcategory
FET General Purpose Power
Technology
MOSFET (Metal Oxide)
Terminal Position
SINGLE
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
260
Time@Peak Reflow Temperature-Max (s)
30
JESD-30 Code
R-PSSO-G2
Qualification Status
Not Qualified
Number of Elements
1
Configuration
SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max
200W Tc
Operating Mode
ENHANCEMENT MODE
Case Connection
DRAIN
FET Type
N-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
8m Ω @ 62A, 10V
Vgs(th) (Max) @ Id
4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
3247pF @ 25V
Current - Continuous Drain (Id) @ 25°C
110A Tc
Gate Charge (Qg) (Max) @ Vgs
146nC @ 10V
Drain to Source Voltage (Vdss)
55V
Drive Voltage (Max Rds On,Min Rds On)
10V
Vgs (Max)
±20V
JEDEC-95 Code
TO-252
Drain Current-Max (Abs) (ID)
75A
Drain-source On Resistance-Max
0.008Ohm
Pulsed Drain Current-Max (IDM)
390A
DS Breakdown Voltage-Min
55V
Avalanche Energy Rating (Eas)
264 mJ
RoHS Status
ROHS3 Compliant

Description

IRF3205STRRPBF Overview
There is a phenomenon known as "avalanche break down", where avalanche energy is applied to the MOSFET and avalanche energy rating (Eas) is 264 mJ.Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 3247pF @ 25V.A device's drain current is its maximum continuous current, and this device's drain current is 75A.A maximum pulsed drain current of 390A is the maximum peak drain current rated for this device.In order to maintain normal operation, it is recommended to keep the DS breakdown voltage above 55V.In order to operate this transistor, a voltage of 55V is needed from the drain to the source (Vdss).Its overall power consumption can be reduced by using drive voltage (10V).

IRF3205STRRPBF Features
the avalanche energy rating (Eas) is 264 mJ
based on its rated peak drain current 390A.
a 55V drain to source voltage (Vdss)

IRF3205STRRPBF Applications
There are a lot of Infineon Technologies
IRF3205STRRPBF applications of single MOSFETs transistors.

Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit

IRF3205STRRPBF More Descriptions

MOSFET, Power;N-Ch;VDSS 55V;RDS(ON) 8 Milliohms;ID 110A;D2Pak;PD 200W;VGS /-20V
Single N-Channel 55 V 110 A 8 mOhm HEXFET® Power Mosfet - D2PAK
55V Single N-Channel HEXFET Power MOSFET in a D2-Pak package, D2PAK-3, RoHSInfineon SCT
Trans MOSFET N-CH 55V 110A 3-Pin(2 Tab) D2PAK T/R
Power Field-Effect Transistor, 75A I(D), 55V, 0.008ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature
MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:55V; Continuous Drain Current, Id:110A; On Resistance, Rds(on):8mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:D2PAK ;RoHS Compliant: Yes

Product Comparison

The three parts on the right have similar specifications to IRF3205STRRPBF.

Image

Part Number

Manufacturer

Factory Lead Time

Mounting Type

Package / Case

Surface Mount

Transistor Element Material

Operating Temperature

Packaging

Series

Published

JESD-609 Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

ECCN Code

Terminal Finish

Additional Feature

Subcategory

Technology

Terminal Position

Terminal Form

Peak Reflow Temperature (Cel)

Time@Peak Reflow Temperature-Max (s)

JESD-30 Code

Qualification Status

Number of Elements

Configuration

Power Dissipation-Max

Operating Mode

Case Connection

FET Type

Transistor Application

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Input Capacitance (Ciss) (Max) @ Vds

Current - Continuous Drain (Id) @ 25°C

Gate Charge (Qg) (Max) @ Vgs

Drain to Source Voltage (Vdss)

Drive Voltage (Max Rds On,Min Rds On)

Vgs (Max)

JEDEC-95 Code

Drain Current-Max (Abs) (ID)

Drain-source On Resistance-Max

Pulsed Drain Current-Max (IDM)

DS Breakdown Voltage-Min

Avalanche Energy Rating (Eas)

RoHS Status

Mount

Number of Pins

Supplier Device Package

Max Operating Temperature

Min Operating Temperature

Voltage - Rated DC

Current Rating

Power Dissipation

Rise Time

Continuous Drain Current (ID)

Gate to Source Voltage (Vgs)

Drain to Source Breakdown Voltage

Input Capacitance

Drain to Source Resistance

Rds On Max

Lead Free

View Compare
IRF3205STRRPBF

Infineon Technologies

14 Weeks

Surface Mount

TO-263-3, D2Pak (2 Leads Tab), TO-263AB

YES

SILICON

-55°C~175°C TJ

Tape & Reel (TR)

HEXFET®

2001

e3

Not For New Designs

1 (Unlimited)

2

EAR99

Matte Tin (Sn) - with Nickel (Ni) barrier

AVALANCHE RATED, HIGH RELIABILITY, ULTRA LOW RESISTANCE

FET General Purpose Power

MOSFET (Metal Oxide)

SINGLE

GULL WING

260

30

R-PSSO-G2

Not Qualified

1

SINGLE WITH BUILT-IN DIODE

200W Tc

ENHANCEMENT MODE

DRAIN

N-Channel

SWITCHING

8m Ω @ 62A, 10V

4V @ 250μA

3247pF @ 25V

110A Tc

146nC @ 10V

55V

10V

±20V

TO-252

75A

0.008Ohm

390A

55V

264 mJ

ROHS3 Compliant

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-
IRF3515STRLPBF

Infineon Technologies

-

Surface Mount

TO-263-3, D2Pak (2 Leads Tab), TO-263AB

-

-

-

Cut Tape (CT)

HEXFET®

2004

-

Obsolete

1 (Unlimited)

-

-

-

-

-

MOSFET (Metal Oxide)

-

-

-

-

-

-

-

-

-

-

-

N-Channel

-

45m Ω @ 25A, 10V

4.5V @ 250μA

2260pF @ 25V

41A Tc

107nC @ 10V

150V

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

IRF3205STRRPBF vs IRF3515STRLPBF
IRF3704STRLPBF

Infineon Technologies

-

Surface Mount

TO-263-3, D2Pak (2 Leads Tab), TO-263AB

-

-

-55°C~175°C TJ

Tape & Reel (TR)

HEXFET®

2004

-

Obsolete

1 (Unlimited)

-

-

-

-

-

MOSFET (Metal Oxide)

-

-

-

-

-

-

1

-

87W Tc

-

-

N-Channel

-

9mOhm @ 15A, 10V

3V @ 250μA

1996pF @ 10V

77A Tc

19nC @ 4.5V

20V

4.5V 10V

±20V

-

-

-

-

-

-

RoHS Compliant

Surface Mount

3

D2PAK

175°C

-55°C

20V

77A

90W

98ns

77A

20V

20V

1.996nF

13.5mOhm

9 mΩ

Lead Free

IRF3205STRRPBF vs IRF3704STRLPBF
IRF3707S

Infineon Technologies

-

Surface Mount

TO-263-3, D2Pak (2 Leads Tab), TO-263AB

-

-

-55°C~175°C TJ

Tube

HEXFET®

2000

-

Obsolete

1 (Unlimited)

-

EAR99

-

-

-

MOSFET (Metal Oxide)

-

-

-

-

-

-

-

-

87W Tc

-

-

N-Channel

-

12.5m Ω @ 15A, 10V

3V @ 250μA

1990pF @ 15V

62A Tc

19nC @ 4.5V

30V

4.5V 10V

±20V

-

-

-

-

-

-

Non-RoHS Compliant

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

IRF3205STRRPBF vs IRF3707S

Certification

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IRF3205~~(24)~~
IRF320~~(28)~~
IRF32~~(33)~~
IRF3~~(55)~~
IRF~~(69)~~

Part Number	Manufacturers	Description	Stock	Price
IRF3205STRRPBF DISTI #	Infineon Technologies AG	Trans MOSFET N-CH Si 55V 110A 3-Pin(2 Tab) D2PAK T RoHS: Compliant	1600	800 $0.7006 1600 $0.5594
IRF3205STRRPBF DISTI #	Infineon Technologies AG	MOSFET N-CH 55V 110A D2PAK RoHS: Compliant	0	800 $0.91245
IRF3205STRRPBF DISTI #	Infineon Technologies AG	MOSFETs RoHS: Compliant	1600	800 $0.788 1600 $0.728
IRF3205STRRPBF DISTI #	Infineon Technologies AG	Trans MOSFET N-CH 55V 110A 3-Pin(2 Tab) D2PAK T/R RoHS: Compliant	2400	800 $0.6659 1600 $0.5449 3200 $0.4999 4800 $0.4609 8000 $0.4279
IRF3205STRRPBF DISTI #	Infineon Technologies AG	MOSFET, Power, N-Ch, VDSS 55V, RDS(ON) 8 Milli RoHS: Compliant	0	800 $1.354 1600 $1.327 4000 $1.286
IRF3205STRRPBF DISTI #	Infineon Technologies AG	Single N-Channel 55 V 110 A 8 mOhm HEXFET Power Mo RoHS: Compliant	1600	800 $0.515 1600 $0.465
IRF3205STRRPBF DISTI #	Infineon Technologies AG	MOSFET 55V 1 N-CH HEXFET 8mOhms 97.3nC RoHS: Compliant	0
IRF3205STRRPBF DISTI #	International Rectifier	RoHS: Compliant	800
IRF3205STRRPBF DISTI #	Infineon Technologies AG	SINGLE N-CHANNEL 55 V 110 A 8 MOHM HEXFET POWERMOS RoHS: Compliant	1600	800 $1.01

Infineon Technologies IRF3205STRRPBF

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