IPP50R199CPXKSA1

Infineon Technologies IPP50R199CPXKSA1

Part Number:
IPP50R199CPXKSA1
Manufacturer:
Infineon Technologies
Ventron No:
2482193-IPP50R199CPXKSA1
Description:
MOSFET N-CH 550V 17A TO-220
ECAD Model:
Datasheet:
IPP50R199CPXKSA1

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Specifications
Infineon Technologies IPP50R199CPXKSA1 technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IPP50R199CPXKSA1.
  • Factory Lead Time
    12 Weeks
  • Mounting Type
    Through Hole
  • Package / Case
    TO-220-3
  • Surface Mount
    NO
  • Number of Pins
    3
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Tube
  • Series
    CoolMOS™
  • Published
    2008
  • JESD-609 Code
    e3
  • Pbfree Code
    yes
  • Part Status
    Not For New Designs
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    3
  • ECCN Code
    EAR99
  • Terminal Finish
    Tin (Sn)
  • Technology
    MOSFET (Metal Oxide)
  • Peak Reflow Temperature (Cel)
    NOT SPECIFIED
  • Time@Peak Reflow Temperature-Max (s)
    NOT SPECIFIED
  • Pin Count
    3
  • Qualification Status
    Not Qualified
  • Number of Elements
    1
  • Power Dissipation-Max
    139W Tc
  • Element Configuration
    Single
  • Operating Mode
    ENHANCEMENT MODE
  • Power Dissipation
    139W
  • Case Connection
    ISOLATED
  • Turn On Delay Time
    35 ns
  • FET Type
    N-Channel
  • Transistor Application
    SWITCHING
  • Rds On (Max) @ Id, Vgs
    199m Ω @ 9.9A, 10V
  • Vgs(th) (Max) @ Id
    3.5V @ 660μA
  • Halogen Free
    Halogen Free
  • Input Capacitance (Ciss) (Max) @ Vds
    1800pF @ 100V
  • Current - Continuous Drain (Id) @ 25°C
    17A Tc
  • Gate Charge (Qg) (Max) @ Vgs
    45nC @ 10V
  • Rise Time
    14ns
  • Drain to Source Voltage (Vdss)
    550V
  • Drive Voltage (Max Rds On,Min Rds On)
    10V
  • Vgs (Max)
    ±20V
  • Fall Time (Typ)
    10 ns
  • Turn-Off Delay Time
    80 ns
  • Continuous Drain Current (ID)
    17A
  • Threshold Voltage
    3V
  • JEDEC-95 Code
    TO-220AB
  • Gate to Source Voltage (Vgs)
    20V
  • Drain-source On Resistance-Max
    0.199Ohm
  • Drain to Source Breakdown Voltage
    500V
  • Pulsed Drain Current-Max (IDM)
    40A
  • REACH SVHC
    No SVHC
  • RoHS Status
    ROHS3 Compliant
Description
IPP50R199CPXKSA1 Overview
As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 1800pF @ 100V.This device conducts a continuous drain current (ID) of 17A, which is the maximum continuous current transistor can conduct.Using VGS=500V and a specified value of ID, the drain-source breakdown voltage is VDS at which a specified value of ID flows. This device has a drain-source breakdown voltage of 500V (that is, no charge flow from drain to source).When the device is turned off, a turn-off delay time of 80 ns occurs as the input capacitance charges before drain current conduction commences.Pulsed drain current is maximum rated peak drain current 40A.Before drain current conduction can begin, the device's turning-on delay time takes time to charge its input capacitance. This delay time is 35 ns.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 20V.Activation of any electrical operation happens at threshold voltage, and this transistor has 3V threshold voltage.This transistor requires a drain-source voltage (Vdss) of 550V.In order to reduce power consumption, this device uses a drive voltage of 10V volts (10V).

IPP50R199CPXKSA1 Features
a continuous drain current (ID) of 17A
a drain-to-source breakdown voltage of 500V voltage
the turn-off delay time is 80 ns
based on its rated peak drain current 40A.
a threshold voltage of 3V
a 550V drain to source voltage (Vdss)


IPP50R199CPXKSA1 Applications
There are a lot of Infineon Technologies
IPP50R199CPXKSA1 applications of single MOSFETs transistors.


Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
IPP50R199CPXKSA1 More Descriptions
Trans MOSFET N-CH 500V 17A 3-Pin(3 Tab) TO-220AB Tube
IPP50R199CP Series 500 V 17 A 199 mOhm Single N-Channel MOSFET - TO-220-3
Power Field-Effect Transistor, 17A I(D), 500V, 0.199ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
CoolMOS CP, Infineon's fifth series of CoolMOS, is designed for hard and soft switching topologies, CCM PFC as well as PWM for ATX, notebook adapter PDP and LCD TV. | Summary of Features: Lowest figure of merit R on x Q g; Ultra low gate charge; Extreme dv/dt rate; Ultra low R DS(on), ultra low gate charge, very fast switching; V th 3 V, g fs very high, internal R g very low; High current capability; Significant reduction of conduction and switching losses; High power density and efficiency for superior power conversion systems; Best-in-class price/performance ratio | Target Applications: Solar; Server; Telecom; Consumer; Adapter; PC power
MOSFET, N, TO-220; Transistor Polarity: N Channel; Continuous Drain Current Id: 17A; Drain Source Voltage Vds: 550V; On Resistance Rds(on): 0.18ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3V; Power Dissipation Pd: 139W; Transistor Case Style: TO-220; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: -; SVHC: No SVHC (27-Jun-2018); Current Id Max: 17A; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to 150°C; Termination Type: Through Hole; Transistor Type: Power MOSFET; Voltage Vds Typ: 550V; Voltage Vgs Max: 20V; Voltage Vgs Rds on Measurement: 10V
Product Comparison
The three parts on the right have similar specifications to IPP50R199CPXKSA1.
  • Image
    Part Number
    Manufacturer
    Factory Lead Time
    Mounting Type
    Package / Case
    Surface Mount
    Number of Pins
    Transistor Element Material
    Operating Temperature
    Packaging
    Series
    Published
    JESD-609 Code
    Pbfree Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    ECCN Code
    Terminal Finish
    Technology
    Peak Reflow Temperature (Cel)
    Time@Peak Reflow Temperature-Max (s)
    Pin Count
    Qualification Status
    Number of Elements
    Power Dissipation-Max
    Element Configuration
    Operating Mode
    Power Dissipation
    Case Connection
    Turn On Delay Time
    FET Type
    Transistor Application
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Halogen Free
    Input Capacitance (Ciss) (Max) @ Vds
    Current - Continuous Drain (Id) @ 25°C
    Gate Charge (Qg) (Max) @ Vgs
    Rise Time
    Drain to Source Voltage (Vdss)
    Drive Voltage (Max Rds On,Min Rds On)
    Vgs (Max)
    Fall Time (Typ)
    Turn-Off Delay Time
    Continuous Drain Current (ID)
    Threshold Voltage
    JEDEC-95 Code
    Gate to Source Voltage (Vgs)
    Drain-source On Resistance-Max
    Drain to Source Breakdown Voltage
    Pulsed Drain Current-Max (IDM)
    REACH SVHC
    RoHS Status
    Terminal Position
    JESD-30 Code
    Configuration
    Drain Current-Max (Abs) (ID)
    DS Breakdown Voltage-Min
    Avalanche Energy Rating (Eas)
    Mount
    Terminal Form
    Reach Compliance Code
    Reference Standard
    Polarity/Channel Type
    FET Technology
    View Compare
  • IPP50R199CPXKSA1
    IPP50R199CPXKSA1
    12 Weeks
    Through Hole
    TO-220-3
    NO
    3
    SILICON
    -55°C~150°C TJ
    Tube
    CoolMOS™
    2008
    e3
    yes
    Not For New Designs
    1 (Unlimited)
    3
    EAR99
    Tin (Sn)
    MOSFET (Metal Oxide)
    NOT SPECIFIED
    NOT SPECIFIED
    3
    Not Qualified
    1
    139W Tc
    Single
    ENHANCEMENT MODE
    139W
    ISOLATED
    35 ns
    N-Channel
    SWITCHING
    199m Ω @ 9.9A, 10V
    3.5V @ 660μA
    Halogen Free
    1800pF @ 100V
    17A Tc
    45nC @ 10V
    14ns
    550V
    10V
    ±20V
    10 ns
    80 ns
    17A
    3V
    TO-220AB
    20V
    0.199Ohm
    500V
    40A
    No SVHC
    ROHS3 Compliant
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • IPP50R350CPXKSA1
    12 Weeks
    Through Hole
    TO-220-3
    NO
    -
    SILICON
    -55°C~150°C TJ
    Tube
    CoolMOS™
    2008
    e3
    yes
    Last Time Buy
    1 (Unlimited)
    3
    EAR99
    Tin (Sn)
    MOSFET (Metal Oxide)
    NOT SPECIFIED
    NOT SPECIFIED
    3
    Not Qualified
    1
    89W Tc
    -
    ENHANCEMENT MODE
    -
    ISOLATED
    -
    N-Channel
    SWITCHING
    350m Ω @ 5.6A, 10V
    3.5V @ 370μA
    -
    1020pF @ 100V
    10A Tc
    25nC @ 10V
    -
    550V
    10V
    ±20V
    -
    -
    -
    -
    TO-220AB
    -
    0.35Ohm
    -
    22A
    -
    ROHS3 Compliant
    SINGLE
    R-PSFM-T3
    SINGLE WITH BUILT-IN DIODE
    10A
    500V
    246 mJ
    -
    -
    -
    -
    -
    -
  • IPP50R250CPHKSA1
    -
    Through Hole
    TO-220-3
    -
    3
    SILICON
    -55°C~150°C TJ
    Tube
    CoolMOS™
    2011
    -
    -
    Obsolete
    1 (Unlimited)
    3
    -
    -
    MOSFET (Metal Oxide)
    -
    -
    -
    -
    1
    114W Tc
    -
    ENHANCEMENT MODE
    -
    ISOLATED
    35 ns
    N-Channel
    SWITCHING
    250m Ω @ 7.8A, 10V
    3.5V @ 520μA
    -
    1420pF @ 100V
    13A Tc
    36nC @ 10V
    14ns
    500V
    10V
    ±20V
    11 ns
    80 ns
    13A
    -
    TO-220AB
    20V
    0.25Ohm
    -
    -
    -
    RoHS Compliant
    SINGLE
    -
    SINGLE WITH BUILT-IN DIODE
    -
    500V
    -
    Through Hole
    -
    -
    -
    -
    -
  • IPP50N12S3L15AKSA1
    -
    -
    -
    NO
    -
    SILICON
    -
    -
    -
    2016
    e3
    yes
    Obsolete
    1 (Unlimited)
    3
    EAR99
    Tin (Sn)
    -
    NOT SPECIFIED
    NOT SPECIFIED
    -
    -
    1
    -
    -
    ENHANCEMENT MODE
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    TO-220AB
    -
    0.0209Ohm
    -
    200A
    -
    ROHS3 Compliant
    SINGLE
    R-PSFM-T3
    SINGLE WITH BUILT-IN DIODE
    50A
    120V
    330 mJ
    -
    THROUGH-HOLE
    not_compliant
    AEC-Q101
    N-CHANNEL
    METAL-OXIDE SEMICONDUCTOR
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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