Infineon Technologies IPP50R199CPXKSA1
- Part Number:
- IPP50R199CPXKSA1
- Manufacturer:
- Infineon Technologies
- Ventron No:
- 2482193-IPP50R199CPXKSA1
- Description:
- MOSFET N-CH 550V 17A TO-220
- Datasheet:
- IPP50R199CPXKSA1
Infineon Technologies IPP50R199CPXKSA1 technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IPP50R199CPXKSA1.
- Factory Lead Time12 Weeks
- Mounting TypeThrough Hole
- Package / CaseTO-220-3
- Surface MountNO
- Number of Pins3
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTube
- SeriesCoolMOS™
- Published2008
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusNot For New Designs
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- Terminal FinishTin (Sn)
- TechnologyMOSFET (Metal Oxide)
- Peak Reflow Temperature (Cel)NOT SPECIFIED
- Time@Peak Reflow Temperature-Max (s)NOT SPECIFIED
- Pin Count3
- Qualification StatusNot Qualified
- Number of Elements1
- Power Dissipation-Max139W Tc
- Element ConfigurationSingle
- Operating ModeENHANCEMENT MODE
- Power Dissipation139W
- Case ConnectionISOLATED
- Turn On Delay Time35 ns
- FET TypeN-Channel
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs199m Ω @ 9.9A, 10V
- Vgs(th) (Max) @ Id3.5V @ 660μA
- Halogen FreeHalogen Free
- Input Capacitance (Ciss) (Max) @ Vds1800pF @ 100V
- Current - Continuous Drain (Id) @ 25°C17A Tc
- Gate Charge (Qg) (Max) @ Vgs45nC @ 10V
- Rise Time14ns
- Drain to Source Voltage (Vdss)550V
- Drive Voltage (Max Rds On,Min Rds On)10V
- Vgs (Max)±20V
- Fall Time (Typ)10 ns
- Turn-Off Delay Time80 ns
- Continuous Drain Current (ID)17A
- Threshold Voltage3V
- JEDEC-95 CodeTO-220AB
- Gate to Source Voltage (Vgs)20V
- Drain-source On Resistance-Max0.199Ohm
- Drain to Source Breakdown Voltage500V
- Pulsed Drain Current-Max (IDM)40A
- REACH SVHCNo SVHC
- RoHS StatusROHS3 Compliant
IPP50R199CPXKSA1 Overview
As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 1800pF @ 100V.This device conducts a continuous drain current (ID) of 17A, which is the maximum continuous current transistor can conduct.Using VGS=500V and a specified value of ID, the drain-source breakdown voltage is VDS at which a specified value of ID flows. This device has a drain-source breakdown voltage of 500V (that is, no charge flow from drain to source).When the device is turned off, a turn-off delay time of 80 ns occurs as the input capacitance charges before drain current conduction commences.Pulsed drain current is maximum rated peak drain current 40A.Before drain current conduction can begin, the device's turning-on delay time takes time to charge its input capacitance. This delay time is 35 ns.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 20V.Activation of any electrical operation happens at threshold voltage, and this transistor has 3V threshold voltage.This transistor requires a drain-source voltage (Vdss) of 550V.In order to reduce power consumption, this device uses a drive voltage of 10V volts (10V).
IPP50R199CPXKSA1 Features
a continuous drain current (ID) of 17A
a drain-to-source breakdown voltage of 500V voltage
the turn-off delay time is 80 ns
based on its rated peak drain current 40A.
a threshold voltage of 3V
a 550V drain to source voltage (Vdss)
IPP50R199CPXKSA1 Applications
There are a lot of Infineon Technologies
IPP50R199CPXKSA1 applications of single MOSFETs transistors.
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 1800pF @ 100V.This device conducts a continuous drain current (ID) of 17A, which is the maximum continuous current transistor can conduct.Using VGS=500V and a specified value of ID, the drain-source breakdown voltage is VDS at which a specified value of ID flows. This device has a drain-source breakdown voltage of 500V (that is, no charge flow from drain to source).When the device is turned off, a turn-off delay time of 80 ns occurs as the input capacitance charges before drain current conduction commences.Pulsed drain current is maximum rated peak drain current 40A.Before drain current conduction can begin, the device's turning-on delay time takes time to charge its input capacitance. This delay time is 35 ns.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 20V.Activation of any electrical operation happens at threshold voltage, and this transistor has 3V threshold voltage.This transistor requires a drain-source voltage (Vdss) of 550V.In order to reduce power consumption, this device uses a drive voltage of 10V volts (10V).
IPP50R199CPXKSA1 Features
a continuous drain current (ID) of 17A
a drain-to-source breakdown voltage of 500V voltage
the turn-off delay time is 80 ns
based on its rated peak drain current 40A.
a threshold voltage of 3V
a 550V drain to source voltage (Vdss)
IPP50R199CPXKSA1 Applications
There are a lot of Infineon Technologies
IPP50R199CPXKSA1 applications of single MOSFETs transistors.
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
IPP50R199CPXKSA1 More Descriptions
Trans MOSFET N-CH 500V 17A 3-Pin(3 Tab) TO-220AB Tube
IPP50R199CP Series 500 V 17 A 199 mOhm Single N-Channel MOSFET - TO-220-3
Power Field-Effect Transistor, 17A I(D), 500V, 0.199ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
CoolMOS CP, Infineon's fifth series of CoolMOS, is designed for hard and soft switching topologies, CCM PFC as well as PWM for ATX, notebook adapter PDP and LCD TV. | Summary of Features: Lowest figure of merit R on x Q g; Ultra low gate charge; Extreme dv/dt rate; Ultra low R DS(on), ultra low gate charge, very fast switching; V th 3 V, g fs very high, internal R g very low; High current capability; Significant reduction of conduction and switching losses; High power density and efficiency for superior power conversion systems; Best-in-class price/performance ratio | Target Applications: Solar; Server; Telecom; Consumer; Adapter; PC power
MOSFET, N, TO-220; Transistor Polarity: N Channel; Continuous Drain Current Id: 17A; Drain Source Voltage Vds: 550V; On Resistance Rds(on): 0.18ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3V; Power Dissipation Pd: 139W; Transistor Case Style: TO-220; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: -; SVHC: No SVHC (27-Jun-2018); Current Id Max: 17A; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to 150°C; Termination Type: Through Hole; Transistor Type: Power MOSFET; Voltage Vds Typ: 550V; Voltage Vgs Max: 20V; Voltage Vgs Rds on Measurement: 10V
IPP50R199CP Series 500 V 17 A 199 mOhm Single N-Channel MOSFET - TO-220-3
Power Field-Effect Transistor, 17A I(D), 500V, 0.199ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
CoolMOS CP, Infineon's fifth series of CoolMOS, is designed for hard and soft switching topologies, CCM PFC as well as PWM for ATX, notebook adapter PDP and LCD TV. | Summary of Features: Lowest figure of merit R on x Q g; Ultra low gate charge; Extreme dv/dt rate; Ultra low R DS(on), ultra low gate charge, very fast switching; V th 3 V, g fs very high, internal R g very low; High current capability; Significant reduction of conduction and switching losses; High power density and efficiency for superior power conversion systems; Best-in-class price/performance ratio | Target Applications: Solar; Server; Telecom; Consumer; Adapter; PC power
MOSFET, N, TO-220; Transistor Polarity: N Channel; Continuous Drain Current Id: 17A; Drain Source Voltage Vds: 550V; On Resistance Rds(on): 0.18ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3V; Power Dissipation Pd: 139W; Transistor Case Style: TO-220; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: -; SVHC: No SVHC (27-Jun-2018); Current Id Max: 17A; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to 150°C; Termination Type: Through Hole; Transistor Type: Power MOSFET; Voltage Vds Typ: 550V; Voltage Vgs Max: 20V; Voltage Vgs Rds on Measurement: 10V
The three parts on the right have similar specifications to IPP50R199CPXKSA1.
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ImagePart NumberManufacturerFactory Lead TimeMounting TypePackage / CaseSurface MountNumber of PinsTransistor Element MaterialOperating TemperaturePackagingSeriesPublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeTerminal FinishTechnologyPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)Pin CountQualification StatusNumber of ElementsPower Dissipation-MaxElement ConfigurationOperating ModePower DissipationCase ConnectionTurn On Delay TimeFET TypeTransistor ApplicationRds On (Max) @ Id, VgsVgs(th) (Max) @ IdHalogen FreeInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsRise TimeDrain to Source Voltage (Vdss)Drive Voltage (Max Rds On,Min Rds On)Vgs (Max)Fall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)Threshold VoltageJEDEC-95 CodeGate to Source Voltage (Vgs)Drain-source On Resistance-MaxDrain to Source Breakdown VoltagePulsed Drain Current-Max (IDM)REACH SVHCRoHS StatusTerminal PositionJESD-30 CodeConfigurationDrain Current-Max (Abs) (ID)DS Breakdown Voltage-MinAvalanche Energy Rating (Eas)MountTerminal FormReach Compliance CodeReference StandardPolarity/Channel TypeFET TechnologyView Compare
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IPP50R199CPXKSA112 WeeksThrough HoleTO-220-3NO3SILICON-55°C~150°C TJTubeCoolMOS™2008e3yesNot For New Designs1 (Unlimited)3EAR99Tin (Sn)MOSFET (Metal Oxide)NOT SPECIFIEDNOT SPECIFIED3Not Qualified1139W TcSingleENHANCEMENT MODE139WISOLATED35 nsN-ChannelSWITCHING199m Ω @ 9.9A, 10V3.5V @ 660μAHalogen Free1800pF @ 100V17A Tc45nC @ 10V14ns550V10V±20V10 ns80 ns17A3VTO-220AB20V0.199Ohm500V40ANo SVHCROHS3 Compliant-------------
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12 WeeksThrough HoleTO-220-3NO-SILICON-55°C~150°C TJTubeCoolMOS™2008e3yesLast Time Buy1 (Unlimited)3EAR99Tin (Sn)MOSFET (Metal Oxide)NOT SPECIFIEDNOT SPECIFIED3Not Qualified189W Tc-ENHANCEMENT MODE-ISOLATED-N-ChannelSWITCHING350m Ω @ 5.6A, 10V3.5V @ 370μA-1020pF @ 100V10A Tc25nC @ 10V-550V10V±20V----TO-220AB-0.35Ohm-22A-ROHS3 CompliantSINGLER-PSFM-T3SINGLE WITH BUILT-IN DIODE10A500V246 mJ------
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-Through HoleTO-220-3-3SILICON-55°C~150°C TJTubeCoolMOS™2011--Obsolete1 (Unlimited)3--MOSFET (Metal Oxide)----1114W Tc-ENHANCEMENT MODE-ISOLATED35 nsN-ChannelSWITCHING250m Ω @ 7.8A, 10V3.5V @ 520μA-1420pF @ 100V13A Tc36nC @ 10V14ns500V10V±20V11 ns80 ns13A-TO-220AB20V0.25Ohm---RoHS CompliantSINGLE-SINGLE WITH BUILT-IN DIODE-500V-Through Hole-----
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---NO-SILICON---2016e3yesObsolete1 (Unlimited)3EAR99Tin (Sn)-NOT SPECIFIEDNOT SPECIFIED--1--ENHANCEMENT MODE-------------------TO-220AB-0.0209Ohm-200A-ROHS3 CompliantSINGLER-PSFM-T3SINGLE WITH BUILT-IN DIODE50A120V330 mJ-THROUGH-HOLEnot_compliantAEC-Q101N-CHANNELMETAL-OXIDE SEMICONDUCTOR
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