Infineon Technologies IPP50R399CPHKSA1
- Part Number:
- IPP50R399CPHKSA1
- Manufacturer:
- Infineon Technologies
- Ventron No:
- 2489132-IPP50R399CPHKSA1
- Description:
- MOSFET N-CH 560V 9A TO-220
- ECAD Model:
-
- Datasheet:
- IPP50R399CPHKSA1
Infineon Technologies IPP50R399CPHKSA1 technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IPP50R399CPHKSA1.
- MountThrough Hole
- Mounting TypeThrough Hole
- Package / CaseTO-220-3
- Number of Pins3
- Supplier Device PackagePG-TO220-3-1
- Operating Temperature-55°C~150°C TJ
- PackagingTube
- SeriesCoolMOS™
- Published2011
- Part StatusDiscontinued
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Max Operating Temperature150°C
- Min Operating Temperature-55°C
- TechnologyMOSFET (Metal Oxide)
- Power Dissipation-Max83W Tc
- FET TypeN-Channel
- Rds On (Max) @ Id, Vgs399mOhm @ 4.9A, 10V
- Vgs(th) (Max) @ Id3.5V @ 330μA
- Input Capacitance (Ciss) (Max) @ Vds890pF @ 100V
- Current - Continuous Drain (Id) @ 25°C9A Tc
- Gate Charge (Qg) (Max) @ Vgs23nC @ 10V
- Drain to Source Voltage (Vdss)560V
- Drive Voltage (Max Rds On,Min Rds On)10V
- Vgs (Max)±20V
- Continuous Drain Current (ID)9A
- Input Capacitance890pF
- Rds On Max399 mΩ
- RoHS StatusROHS3 Compliant
IPP50R399CPHKSA1 Overview
As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 890pF @ 100V.This device conducts a continuous drain current (ID) of 9A, which is the maximum continuous current transistor can conduct.This transistor requires a drain-source voltage (Vdss) of 560V.In order to reduce power consumption, this device uses a drive voltage of 10V volts (10V).
IPP50R399CPHKSA1 Features
a continuous drain current (ID) of 9A
a 560V drain to source voltage (Vdss)
IPP50R399CPHKSA1 Applications
There are a lot of Infineon Technologies
IPP50R399CPHKSA1 applications of single MOSFETs transistors.
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 890pF @ 100V.This device conducts a continuous drain current (ID) of 9A, which is the maximum continuous current transistor can conduct.This transistor requires a drain-source voltage (Vdss) of 560V.In order to reduce power consumption, this device uses a drive voltage of 10V volts (10V).
IPP50R399CPHKSA1 Features
a continuous drain current (ID) of 9A
a 560V drain to source voltage (Vdss)
IPP50R399CPHKSA1 Applications
There are a lot of Infineon Technologies
IPP50R399CPHKSA1 applications of single MOSFETs transistors.
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
IPP50R399CPHKSA1 More Descriptions
Trans MOSFET N-CH 500V 9A 3-Pin(3 Tab) TO-220AB
Compliant Through Hole 399 mΩ TO-220-3 3 890 pF 83 W 150 °C
MOSFET N-CH 560V 9A TO220-3
CAP CER 6.7PF 50V NP0 0603
Compliant Through Hole 399 mΩ TO-220-3 3 890 pF 83 W 150 °C
MOSFET N-CH 560V 9A TO220-3
CAP CER 6.7PF 50V NP0 0603
The three parts on the right have similar specifications to IPP50R399CPHKSA1.
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ImagePart NumberManufacturerMountMounting TypePackage / CaseNumber of PinsSupplier Device PackageOperating TemperaturePackagingSeriesPublishedPart StatusMoisture Sensitivity Level (MSL)Max Operating TemperatureMin Operating TemperatureTechnologyPower Dissipation-MaxFET TypeRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsDrain to Source Voltage (Vdss)Drive Voltage (Max Rds On,Min Rds On)Vgs (Max)Continuous Drain Current (ID)Input CapacitanceRds On MaxRoHS StatusTransistor Element MaterialNumber of TerminationsTerminal PositionNumber of ElementsConfigurationOperating ModeCase ConnectionTurn On Delay TimeTransistor ApplicationRise TimeFall Time (Typ)Turn-Off Delay TimeJEDEC-95 CodeGate to Source Voltage (Vgs)Drain-source On Resistance-MaxDS Breakdown Voltage-MinFactory Lead TimeJESD-609 CodePbfree CodeECCN CodeTerminal FinishMax Power DissipationPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)Pin CountQualification StatusElement ConfigurationPower DissipationHalogen FreePolarity/Channel TypeMax Dual Supply VoltageDrain to Source Breakdown VoltageFET TechnologyDrain to Source ResistanceHeightLengthWidthLead FreeSurface MountTerminal FormReach Compliance CodeReference StandardJESD-30 CodeDrain Current-Max (Abs) (ID)Pulsed Drain Current-Max (IDM)Avalanche Energy Rating (Eas)View Compare
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IPP50R399CPHKSA1Through HoleThrough HoleTO-220-33PG-TO220-3-1-55°C~150°C TJTubeCoolMOS™2011Discontinued1 (Unlimited)150°C-55°CMOSFET (Metal Oxide)83W TcN-Channel399mOhm @ 4.9A, 10V3.5V @ 330μA890pF @ 100V9A Tc23nC @ 10V560V10V±20V9A890pF399 mΩROHS3 Compliant----------------------------------------------- -
Through HoleThrough HoleTO-220-33--55°C~150°C TJTubeCoolMOS™2011Obsolete1 (Unlimited)--MOSFET (Metal Oxide)114W TcN-Channel250m Ω @ 7.8A, 10V3.5V @ 520μA1420pF @ 100V13A Tc36nC @ 10V500V10V±20V13A--RoHS CompliantSILICON3SINGLE1SINGLE WITH BUILT-IN DIODEENHANCEMENT MODEISOLATED35 nsSWITCHING14ns11 ns80 nsTO-220AB20V0.25Ohm500V------------------------------
-
Through Hole-TO-2203----2008Not For New Designs1 (Unlimited)150°C-55°C--------500V--13A1.42nF250 mΩROHS3 Compliant-3-1-ENHANCEMENT MODEISOLATED35 nsSWITCHING14ns11 ns80 ns-20V--40 Weekse3yesEAR99Tin (Sn)114WNOT SPECIFIEDNOT SPECIFIED3Not QualifiedSingle114WHalogen FreeN-CHANNEL500V500VMETAL-OXIDE SEMICONDUCTOR250mOhm15.95mm10.36mm4.57mmLead Free--------
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--------2016Obsolete1 (Unlimited)----------------ROHS3 CompliantSILICON3SINGLE1SINGLE WITH BUILT-IN DIODEENHANCEMENT MODE------TO-220AB-0.0209Ohm120V-e3yesEAR99Tin (Sn)-NOT SPECIFIEDNOT SPECIFIED-----N-CHANNEL--METAL-OXIDE SEMICONDUCTOR-----NOTHROUGH-HOLEnot_compliantAEC-Q101R-PSFM-T350A200A330 mJ
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