Infineon Technologies IPP50R280CEXKSA1
- Part Number:
- IPP50R280CEXKSA1
- Manufacturer:
- Infineon Technologies
- Ventron No:
- 2849758-IPP50R280CEXKSA1
- Description:
- MOSFET N-CH 500V 13A PG-TO220
- Datasheet:
- IPP50R280CEXKSA1
Infineon Technologies IPP50R280CEXKSA1 technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IPP50R280CEXKSA1.
- Factory Lead Time18 Weeks
- MountThrough Hole
- Mounting TypeThrough Hole
- Package / CaseTO-220-3
- Number of Pins3
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTube
- SeriesCoolMOS™
- Published2008
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- Terminal FinishTin (Sn)
- TechnologyMOSFET (Metal Oxide)
- Terminal PositionSINGLE
- Peak Reflow Temperature (Cel)NOT SPECIFIED
- Time@Peak Reflow Temperature-Max (s)NOT SPECIFIED
- Pin Count3
- Number of Elements1
- ConfigurationSINGLE WITH BUILT-IN DIODE
- Power Dissipation-Max92W Tc
- Operating ModeENHANCEMENT MODE
- Turn On Delay Time8 ns
- FET TypeN-Channel
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs280m Ω @ 4.2A, 13V
- Vgs(th) (Max) @ Id3.5V @ 350μA
- Halogen FreeHalogen Free
- Input Capacitance (Ciss) (Max) @ Vds773pF @ 100V
- Current - Continuous Drain (Id) @ 25°C13A Tc
- Gate Charge (Qg) (Max) @ Vgs32.6nC @ 10V
- Rise Time6.4ns
- Drive Voltage (Max Rds On,Min Rds On)13V
- Vgs (Max)±20V
- Fall Time (Typ)7.6 ns
- Turn-Off Delay Time40 ns
- Continuous Drain Current (ID)13A
- JEDEC-95 CodeTO-220AB
- Gate to Source Voltage (Vgs)20V
- Max Dual Supply Voltage500V
- Drain-source On Resistance-Max0.28Ohm
- Pulsed Drain Current-Max (IDM)42.9A
- FET FeatureSuper Junction
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
IPP50R280CEXKSA1 Overview
The maximum input capacitance of this device is 773pF @ 100V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 13A.Before drain current conduction can begin, the device's turn-off delay time must be charged up to full capacitance. This value is 40 ns.There is no pulsed drain current maximum for this device based on its rated peak drain current 42.9A.During device turn-on, the input capacitance must be charged for a period of time before drain current conduction can begin, so its delay time is 8 ns seconds.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.With its 500V power supply, it is capable of handling a dual voltage maximum.Using drive voltage (13V), this device helps reduce its power consumption.
IPP50R280CEXKSA1 Features
a continuous drain current (ID) of 13A
the turn-off delay time is 40 ns
based on its rated peak drain current 42.9A.
IPP50R280CEXKSA1 Applications
There are a lot of Infineon Technologies
IPP50R280CEXKSA1 applications of single MOSFETs transistors.
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
The maximum input capacitance of this device is 773pF @ 100V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 13A.Before drain current conduction can begin, the device's turn-off delay time must be charged up to full capacitance. This value is 40 ns.There is no pulsed drain current maximum for this device based on its rated peak drain current 42.9A.During device turn-on, the input capacitance must be charged for a period of time before drain current conduction can begin, so its delay time is 8 ns seconds.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.With its 500V power supply, it is capable of handling a dual voltage maximum.Using drive voltage (13V), this device helps reduce its power consumption.
IPP50R280CEXKSA1 Features
a continuous drain current (ID) of 13A
the turn-off delay time is 40 ns
based on its rated peak drain current 42.9A.
IPP50R280CEXKSA1 Applications
There are a lot of Infineon Technologies
IPP50R280CEXKSA1 applications of single MOSFETs transistors.
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
IPP50R280CEXKSA1 More Descriptions
Trans MOSFET N-CH 550V 13A 3-Pin(3 Tab) TO-220 Tube
Mosfet, N-Ch, 500V, 18.1A, To-220; Transistor Polarity:N Channel; Continuous Drain Current Id:18.1A; Drain Source Voltage Vds:500V; On Resistance Rds(On):0.25Ohm; Rds(On) Test Voltage Vgs:13V; Threshold Voltage Vgs:3V; Power Rohs Compliant: Yes |Infineon IPP50R280CEXKSA1
500V CoolMOS™ CE is a price-performance optimized platform enabling to target cost sensitive applications in consumer and lighting markets by still meeting highest efficiency standards, PG-TO220-3, RoHSInfineon SCT
500V CoolMOS CE is a price-performance optimized platform enabling to target cost sensitive applications in consumer and lighting markets by still meeting highest efficiency standards. The new series provides all benefits of a fast switching superjunction MOSFET while not sacrificing ease of use and offering the best cost down performance ratio available on the market. | Summary of Features: Reduced energy stored in output capacitance (E oss); High body diode ruggedness; Reduced reverse recovery charge (Q rr ); Reduced gate charge (Q g ) | Benefits: Easy control of switching behavior; Better light load efficiency compared to previous CoolMOS generations; Cost attractive alternative compared to standard MOSFETs; Outstanding quality and reliability of CoolMOS technology | Target Applications: Consumer; Lighting; PC silverbox
Mosfet, N-Ch, 500V, 18.1A, To-220; Transistor Polarity:N Channel; Continuous Drain Current Id:18.1A; Drain Source Voltage Vds:500V; On Resistance Rds(On):0.25Ohm; Rds(On) Test Voltage Vgs:13V; Threshold Voltage Vgs:3V; Power Rohs Compliant: Yes |Infineon IPP50R280CEXKSA1
500V CoolMOS™ CE is a price-performance optimized platform enabling to target cost sensitive applications in consumer and lighting markets by still meeting highest efficiency standards, PG-TO220-3, RoHSInfineon SCT
500V CoolMOS CE is a price-performance optimized platform enabling to target cost sensitive applications in consumer and lighting markets by still meeting highest efficiency standards. The new series provides all benefits of a fast switching superjunction MOSFET while not sacrificing ease of use and offering the best cost down performance ratio available on the market. | Summary of Features: Reduced energy stored in output capacitance (E oss); High body diode ruggedness; Reduced reverse recovery charge (Q rr ); Reduced gate charge (Q g ) | Benefits: Easy control of switching behavior; Better light load efficiency compared to previous CoolMOS generations; Cost attractive alternative compared to standard MOSFETs; Outstanding quality and reliability of CoolMOS technology | Target Applications: Consumer; Lighting; PC silverbox
The three parts on the right have similar specifications to IPP50R280CEXKSA1.
-
ImagePart NumberManufacturerFactory Lead TimeMountMounting TypePackage / CaseNumber of PinsTransistor Element MaterialOperating TemperaturePackagingSeriesPublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsTerminal FinishTechnologyTerminal PositionPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)Pin CountNumber of ElementsConfigurationPower Dissipation-MaxOperating ModeTurn On Delay TimeFET TypeTransistor ApplicationRds On (Max) @ Id, VgsVgs(th) (Max) @ IdHalogen FreeInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsRise TimeDrive Voltage (Max Rds On,Min Rds On)Vgs (Max)Fall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)JEDEC-95 CodeGate to Source Voltage (Vgs)Max Dual Supply VoltageDrain-source On Resistance-MaxPulsed Drain Current-Max (IDM)FET FeatureRoHS StatusLead FreeECCN CodeMax Operating TemperatureMin Operating TemperatureMax Power DissipationQualification StatusElement ConfigurationPower DissipationCase ConnectionDrain to Source Voltage (Vdss)Polarity/Channel TypeDrain to Source Breakdown VoltageInput CapacitanceFET TechnologyDrain to Source ResistanceRds On MaxHeightLengthWidthSupplier Device PackageView Compare
-
IPP50R280CEXKSA118 WeeksThrough HoleThrough HoleTO-220-33SILICON-55°C~150°C TJTubeCoolMOS™2008e3yesActive1 (Unlimited)3Tin (Sn)MOSFET (Metal Oxide)SINGLENOT SPECIFIEDNOT SPECIFIED31SINGLE WITH BUILT-IN DIODE92W TcENHANCEMENT MODE8 nsN-ChannelSWITCHING280m Ω @ 4.2A, 13V3.5V @ 350μAHalogen Free773pF @ 100V13A Tc32.6nC @ 10V6.4ns13V±20V7.6 ns40 ns13ATO-220AB20V500V0.28Ohm42.9ASuper JunctionROHS3 CompliantLead Free--------------------
-
40 WeeksThrough Hole-TO-2203----2008e3yesNot For New Designs1 (Unlimited)3Tin (Sn)--NOT SPECIFIEDNOT SPECIFIED31--ENHANCEMENT MODE35 ns-SWITCHING--Halogen Free---14ns--11 ns80 ns13A-20V500V---ROHS3 CompliantLead FreeEAR99150°C-55°C114WNot QualifiedSingle114WISOLATED500VN-CHANNEL500V1.42nFMETAL-OXIDE SEMICONDUCTOR250mOhm250 mΩ15.95mm10.36mm4.57mm-
-
--Through HoleTO-220-3---55°C~150°C TJTubeCoolMOS™2007--Discontinued1 (Unlimited)--MOSFET (Metal Oxide)------139W Tc--N-Channel-199mOhm @ 9.9A, 10V3.5V @ 660μA-1800pF @ 100V17A Tc45nC @ 10V-10V±20V---------ROHS3 Compliant---------550V---------PG-TO220-3-1
-
-Through HoleThrough HoleTO-220-33--55°C~150°C TJTubeCoolMOS™2011--Discontinued1 (Unlimited)--MOSFET (Metal Oxide)------83W Tc--N-Channel-399mOhm @ 4.9A, 10V3.5V @ 330μA-890pF @ 100V9A Tc23nC @ 10V-10V±20V--9A------ROHS3 Compliant--150°C-55°C-----560V--890pF--399 mΩ---PG-TO220-3-1
Popular Search Part Number
Related Keywords
Search Tags
Latest News
-
11 January 2024
78L05 Voltage Regulator Characteristics, Applications, 78L05 vs 7805 and More
Ⅰ. Overview of 78L05Ⅱ. What are the characteristics of 78L05?Ⅲ. Technical parameters of 78L05Ⅳ. Working principle of 78L05Ⅴ. Where is 78L05 used?Ⅵ. Application circuit of 78L05 voltage regulatorⅦ.... -
12 January 2024
A Complete Guide to TXS0102DCUR Voltage Level Translator
Ⅰ. What is TXS0102DCUR?Ⅱ. Symbol, footprint and pin configuration of TXS0102DCURⅢ. What are the features of TXS0102DCUR?Ⅳ. How does TXS0102DCUR work?Ⅴ. Specifications of TXS0102DCURⅥ. Price and inventory of... -
12 January 2024
SN74LVC1G08DBVR Characteristics, Specifications, Layout, Advantages and Applications
Ⅰ. SN74LVC1G08DBVR overviewⅡ. Characteristics of SN74LVC1G08DBVRⅢ. The specifications of SN74LVC1G08DBVRⅣ. Layout of SN74LVC1G08DBVRⅤ. What are the advantages of SN74LVC1G08DBVR?Ⅵ. Where is SN74LVC1G08DBVR used?Ⅶ. How to use SN74LVC1G08DBVR?SN74LVC1G08DBVR is... -
15 January 2024
Performance and Applications of TMS320VC5502PGF300 Digital Signal Processor
Ⅰ. What is a digital signal processor?Ⅱ. Introduction to TMS320VC5502PGF300Ⅲ. Specifications of TMS320VC5502PGF300Ⅳ. Performance of TMS320VC5502PGF300Ⅴ. CPU architecture of TMS320VC5502PGF300Ⅵ. Applications of TMS320VC5502PGF300Ⅶ. Package of TMS320VC5502PGF300Ⅷ. What are...
Help you to save your cost and time.
Reliable package for your goods.
Fast Reliable Delivery to save time.
Quality premium after-sale service.