IPP50R280CEXKSA1

Infineon Technologies IPP50R280CEXKSA1

Part Number:
IPP50R280CEXKSA1
Manufacturer:
Infineon Technologies
Ventron No:
2849758-IPP50R280CEXKSA1
Description:
MOSFET N-CH 500V 13A PG-TO220
ECAD Model:
Datasheet:
IPP50R280CEXKSA1

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Specifications
Infineon Technologies IPP50R280CEXKSA1 technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IPP50R280CEXKSA1.
  • Factory Lead Time
    18 Weeks
  • Mount
    Through Hole
  • Mounting Type
    Through Hole
  • Package / Case
    TO-220-3
  • Number of Pins
    3
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Tube
  • Series
    CoolMOS™
  • Published
    2008
  • JESD-609 Code
    e3
  • Pbfree Code
    yes
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    3
  • Terminal Finish
    Tin (Sn)
  • Technology
    MOSFET (Metal Oxide)
  • Terminal Position
    SINGLE
  • Peak Reflow Temperature (Cel)
    NOT SPECIFIED
  • Time@Peak Reflow Temperature-Max (s)
    NOT SPECIFIED
  • Pin Count
    3
  • Number of Elements
    1
  • Configuration
    SINGLE WITH BUILT-IN DIODE
  • Power Dissipation-Max
    92W Tc
  • Operating Mode
    ENHANCEMENT MODE
  • Turn On Delay Time
    8 ns
  • FET Type
    N-Channel
  • Transistor Application
    SWITCHING
  • Rds On (Max) @ Id, Vgs
    280m Ω @ 4.2A, 13V
  • Vgs(th) (Max) @ Id
    3.5V @ 350μA
  • Halogen Free
    Halogen Free
  • Input Capacitance (Ciss) (Max) @ Vds
    773pF @ 100V
  • Current - Continuous Drain (Id) @ 25°C
    13A Tc
  • Gate Charge (Qg) (Max) @ Vgs
    32.6nC @ 10V
  • Rise Time
    6.4ns
  • Drive Voltage (Max Rds On,Min Rds On)
    13V
  • Vgs (Max)
    ±20V
  • Fall Time (Typ)
    7.6 ns
  • Turn-Off Delay Time
    40 ns
  • Continuous Drain Current (ID)
    13A
  • JEDEC-95 Code
    TO-220AB
  • Gate to Source Voltage (Vgs)
    20V
  • Max Dual Supply Voltage
    500V
  • Drain-source On Resistance-Max
    0.28Ohm
  • Pulsed Drain Current-Max (IDM)
    42.9A
  • FET Feature
    Super Junction
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Lead Free
Description
IPP50R280CEXKSA1 Overview
The maximum input capacitance of this device is 773pF @ 100V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 13A.Before drain current conduction can begin, the device's turn-off delay time must be charged up to full capacitance. This value is 40 ns.There is no pulsed drain current maximum for this device based on its rated peak drain current 42.9A.During device turn-on, the input capacitance must be charged for a period of time before drain current conduction can begin, so its delay time is 8 ns seconds.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.With its 500V power supply, it is capable of handling a dual voltage maximum.Using drive voltage (13V), this device helps reduce its power consumption.

IPP50R280CEXKSA1 Features
a continuous drain current (ID) of 13A
the turn-off delay time is 40 ns
based on its rated peak drain current 42.9A.


IPP50R280CEXKSA1 Applications
There are a lot of Infineon Technologies
IPP50R280CEXKSA1 applications of single MOSFETs transistors.


Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
IPP50R280CEXKSA1 More Descriptions
Trans MOSFET N-CH 550V 13A 3-Pin(3 Tab) TO-220 Tube
Mosfet, N-Ch, 500V, 18.1A, To-220; Transistor Polarity:N Channel; Continuous Drain Current Id:18.1A; Drain Source Voltage Vds:500V; On Resistance Rds(On):0.25Ohm; Rds(On) Test Voltage Vgs:13V; Threshold Voltage Vgs:3V; Power Rohs Compliant: Yes |Infineon IPP50R280CEXKSA1
500V CoolMOS™ CE is a price-performance optimized platform enabling to target cost sensitive applications in consumer and lighting markets by still meeting highest efficiency standards, PG-TO220-3, RoHSInfineon SCT
500V CoolMOS CE is a price-performance optimized platform enabling to target cost sensitive applications in consumer and lighting markets by still meeting highest efficiency standards. The new series provides all benefits of a fast switching superjunction MOSFET while not sacrificing ease of use and offering the best cost down performance ratio available on the market. | Summary of Features: Reduced energy stored in output capacitance (E oss); High body diode ruggedness; Reduced reverse recovery charge (Q rr ); Reduced gate charge (Q g ) | Benefits: Easy control of switching behavior; Better light load efficiency compared to previous CoolMOS generations; Cost attractive alternative compared to standard MOSFETs; Outstanding quality and reliability of CoolMOS technology | Target Applications: Consumer; Lighting; PC silverbox
Product Comparison
The three parts on the right have similar specifications to IPP50R280CEXKSA1.
  • Image
    Part Number
    Manufacturer
    Factory Lead Time
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Transistor Element Material
    Operating Temperature
    Packaging
    Series
    Published
    JESD-609 Code
    Pbfree Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    Terminal Finish
    Technology
    Terminal Position
    Peak Reflow Temperature (Cel)
    Time@Peak Reflow Temperature-Max (s)
    Pin Count
    Number of Elements
    Configuration
    Power Dissipation-Max
    Operating Mode
    Turn On Delay Time
    FET Type
    Transistor Application
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Halogen Free
    Input Capacitance (Ciss) (Max) @ Vds
    Current - Continuous Drain (Id) @ 25°C
    Gate Charge (Qg) (Max) @ Vgs
    Rise Time
    Drive Voltage (Max Rds On,Min Rds On)
    Vgs (Max)
    Fall Time (Typ)
    Turn-Off Delay Time
    Continuous Drain Current (ID)
    JEDEC-95 Code
    Gate to Source Voltage (Vgs)
    Max Dual Supply Voltage
    Drain-source On Resistance-Max
    Pulsed Drain Current-Max (IDM)
    FET Feature
    RoHS Status
    Lead Free
    ECCN Code
    Max Operating Temperature
    Min Operating Temperature
    Max Power Dissipation
    Qualification Status
    Element Configuration
    Power Dissipation
    Case Connection
    Drain to Source Voltage (Vdss)
    Polarity/Channel Type
    Drain to Source Breakdown Voltage
    Input Capacitance
    FET Technology
    Drain to Source Resistance
    Rds On Max
    Height
    Length
    Width
    Supplier Device Package
    View Compare
  • IPP50R280CEXKSA1
    IPP50R280CEXKSA1
    18 Weeks
    Through Hole
    Through Hole
    TO-220-3
    3
    SILICON
    -55°C~150°C TJ
    Tube
    CoolMOS™
    2008
    e3
    yes
    Active
    1 (Unlimited)
    3
    Tin (Sn)
    MOSFET (Metal Oxide)
    SINGLE
    NOT SPECIFIED
    NOT SPECIFIED
    3
    1
    SINGLE WITH BUILT-IN DIODE
    92W Tc
    ENHANCEMENT MODE
    8 ns
    N-Channel
    SWITCHING
    280m Ω @ 4.2A, 13V
    3.5V @ 350μA
    Halogen Free
    773pF @ 100V
    13A Tc
    32.6nC @ 10V
    6.4ns
    13V
    ±20V
    7.6 ns
    40 ns
    13A
    TO-220AB
    20V
    500V
    0.28Ohm
    42.9A
    Super Junction
    ROHS3 Compliant
    Lead Free
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • IPP50R250CPXKSA1
    40 Weeks
    Through Hole
    -
    TO-220
    3
    -
    -
    -
    -
    2008
    e3
    yes
    Not For New Designs
    1 (Unlimited)
    3
    Tin (Sn)
    -
    -
    NOT SPECIFIED
    NOT SPECIFIED
    3
    1
    -
    -
    ENHANCEMENT MODE
    35 ns
    -
    SWITCHING
    -
    -
    Halogen Free
    -
    -
    -
    14ns
    -
    -
    11 ns
    80 ns
    13A
    -
    20V
    500V
    -
    -
    -
    ROHS3 Compliant
    Lead Free
    EAR99
    150°C
    -55°C
    114W
    Not Qualified
    Single
    114W
    ISOLATED
    500V
    N-CHANNEL
    500V
    1.42nF
    METAL-OXIDE SEMICONDUCTOR
    250mOhm
    250 mΩ
    15.95mm
    10.36mm
    4.57mm
    -
  • IPP50R199CPHKSA1
    -
    -
    Through Hole
    TO-220-3
    -
    -
    -55°C~150°C TJ
    Tube
    CoolMOS™
    2007
    -
    -
    Discontinued
    1 (Unlimited)
    -
    -
    MOSFET (Metal Oxide)
    -
    -
    -
    -
    -
    -
    139W Tc
    -
    -
    N-Channel
    -
    199mOhm @ 9.9A, 10V
    3.5V @ 660μA
    -
    1800pF @ 100V
    17A Tc
    45nC @ 10V
    -
    10V
    ±20V
    -
    -
    -
    -
    -
    -
    -
    -
    -
    ROHS3 Compliant
    -
    -
    -
    -
    -
    -
    -
    -
    -
    550V
    -
    -
    -
    -
    -
    -
    -
    -
    -
    PG-TO220-3-1
  • IPP50R399CPHKSA1
    -
    Through Hole
    Through Hole
    TO-220-3
    3
    -
    -55°C~150°C TJ
    Tube
    CoolMOS™
    2011
    -
    -
    Discontinued
    1 (Unlimited)
    -
    -
    MOSFET (Metal Oxide)
    -
    -
    -
    -
    -
    -
    83W Tc
    -
    -
    N-Channel
    -
    399mOhm @ 4.9A, 10V
    3.5V @ 330μA
    -
    890pF @ 100V
    9A Tc
    23nC @ 10V
    -
    10V
    ±20V
    -
    -
    9A
    -
    -
    -
    -
    -
    -
    ROHS3 Compliant
    -
    -
    150°C
    -55°C
    -
    -
    -
    -
    -
    560V
    -
    -
    890pF
    -
    -
    399 mΩ
    -
    -
    -
    PG-TO220-3-1
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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