Infineon Technologies IPP50R199CPHKSA1
- Part Number:
- IPP50R199CPHKSA1
- Manufacturer:
- Infineon Technologies
- Ventron No:
- 2851370-IPP50R199CPHKSA1
- Description:
- MOSFET N-CH 550V TO-220
- ECAD Model:
-
- Datasheet:
- IPP50R199CPHKSA1
Infineon Technologies IPP50R199CPHKSA1 technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IPP50R199CPHKSA1.
- Mounting TypeThrough Hole
- Package / CaseTO-220-3
- Supplier Device PackagePG-TO220-3-1
- Operating Temperature-55°C~150°C TJ
- PackagingTube
- SeriesCoolMOS™
- Published2007
- Part StatusDiscontinued
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- TechnologyMOSFET (Metal Oxide)
- Power Dissipation-Max139W Tc
- FET TypeN-Channel
- Rds On (Max) @ Id, Vgs199mOhm @ 9.9A, 10V
- Vgs(th) (Max) @ Id3.5V @ 660μA
- Input Capacitance (Ciss) (Max) @ Vds1800pF @ 100V
- Current - Continuous Drain (Id) @ 25°C17A Tc
- Gate Charge (Qg) (Max) @ Vgs45nC @ 10V
- Drain to Source Voltage (Vdss)550V
- Drive Voltage (Max Rds On,Min Rds On)10V
- Vgs (Max)±20V
- RoHS StatusROHS3 Compliant
IPP50R199CPHKSA1 Overview
The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 1800pF @ 100V.Operating this transistor requires a 550V drain to source voltage (Vdss).By using drive voltage (10V), this device helps reduce its overall power consumption.
IPP50R199CPHKSA1 Features
a 550V drain to source voltage (Vdss)
IPP50R199CPHKSA1 Applications
There are a lot of Infineon Technologies
IPP50R199CPHKSA1 applications of single MOSFETs transistors.
LCD/LED TV
Consumer Appliances
Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 1800pF @ 100V.Operating this transistor requires a 550V drain to source voltage (Vdss).By using drive voltage (10V), this device helps reduce its overall power consumption.
IPP50R199CPHKSA1 Features
a 550V drain to source voltage (Vdss)
IPP50R199CPHKSA1 Applications
There are a lot of Infineon Technologies
IPP50R199CPHKSA1 applications of single MOSFETs transistors.
LCD/LED TV
Consumer Appliances
Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
The three parts on the right have similar specifications to IPP50R199CPHKSA1.
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ImagePart NumberManufacturerMounting TypePackage / CaseSupplier Device PackageOperating TemperaturePackagingSeriesPublishedPart StatusMoisture Sensitivity Level (MSL)TechnologyPower Dissipation-MaxFET TypeRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsDrain to Source Voltage (Vdss)Drive Voltage (Max Rds On,Min Rds On)Vgs (Max)RoHS StatusMountNumber of PinsMax Operating TemperatureMin Operating TemperatureContinuous Drain Current (ID)Input CapacitanceRds On MaxSurface MountTransistor Element MaterialJESD-609 CodePbfree CodeNumber of TerminationsECCN CodeTerminal FinishTerminal PositionTerminal FormPeak Reflow Temperature (Cel)Reach Compliance CodeTime@Peak Reflow Temperature-Max (s)Reference StandardJESD-30 CodeNumber of ElementsConfigurationOperating ModePolarity/Channel TypeJEDEC-95 CodeDrain Current-Max (Abs) (ID)Drain-source On Resistance-MaxPulsed Drain Current-Max (IDM)DS Breakdown Voltage-MinAvalanche Energy Rating (Eas)FET TechnologyView Compare
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IPP50R199CPHKSA1Through HoleTO-220-3PG-TO220-3-1-55°C~150°C TJTubeCoolMOS™2007Discontinued1 (Unlimited)MOSFET (Metal Oxide)139W TcN-Channel199mOhm @ 9.9A, 10V3.5V @ 660μA1800pF @ 100V17A Tc45nC @ 10V550V10V±20VROHS3 Compliant--------------------------------- -
Through HoleTO-220-3PG-TO220-3-1-55°C~150°C TJTubeCoolMOS™2008Obsolete1 (Unlimited)MOSFET (Metal Oxide)66W TcN-Channel520mOhm @ 3.8A, 10V3.5V @ 250μA680pF @ 100V7.1A Tc17nC @ 10V550V10V±20V---------------------------------
-
Through HoleTO-220-3PG-TO220-3-1-55°C~150°C TJTubeCoolMOS™2011Discontinued1 (Unlimited)MOSFET (Metal Oxide)83W TcN-Channel399mOhm @ 4.9A, 10V3.5V @ 330μA890pF @ 100V9A Tc23nC @ 10V560V10V±20VROHS3 CompliantThrough Hole3150°C-55°C9A890pF399 mΩ-------------------------
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------2016Obsolete1 (Unlimited)-----------ROHS3 Compliant-------NOSILICONe3yes3EAR99Tin (Sn)SINGLETHROUGH-HOLENOT SPECIFIEDnot_compliantNOT SPECIFIEDAEC-Q101R-PSFM-T31SINGLE WITH BUILT-IN DIODEENHANCEMENT MODEN-CHANNELTO-220AB50A0.0209Ohm200A120V330 mJMETAL-OXIDE SEMICONDUCTOR
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