Infineon Technologies IPP50R250CPHKSA1
- Part Number:
- IPP50R250CPHKSA1
- Manufacturer:
- Infineon Technologies
- Ventron No:
- 2854297-IPP50R250CPHKSA1
- Description:
- MOSFET N-CH 500V 13A TO-220
- Datasheet:
- IPP50R250CPHKSA1
Infineon Technologies IPP50R250CPHKSA1 technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IPP50R250CPHKSA1.
- MountThrough Hole
- Mounting TypeThrough Hole
- Package / CaseTO-220-3
- Number of Pins3
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTube
- SeriesCoolMOS™
- Published2011
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- TechnologyMOSFET (Metal Oxide)
- Terminal PositionSINGLE
- Number of Elements1
- ConfigurationSINGLE WITH BUILT-IN DIODE
- Power Dissipation-Max114W Tc
- Operating ModeENHANCEMENT MODE
- Case ConnectionISOLATED
- Turn On Delay Time35 ns
- FET TypeN-Channel
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs250m Ω @ 7.8A, 10V
- Vgs(th) (Max) @ Id3.5V @ 520μA
- Input Capacitance (Ciss) (Max) @ Vds1420pF @ 100V
- Current - Continuous Drain (Id) @ 25°C13A Tc
- Gate Charge (Qg) (Max) @ Vgs36nC @ 10V
- Rise Time14ns
- Drain to Source Voltage (Vdss)500V
- Drive Voltage (Max Rds On,Min Rds On)10V
- Vgs (Max)±20V
- Fall Time (Typ)11 ns
- Turn-Off Delay Time80 ns
- Continuous Drain Current (ID)13A
- JEDEC-95 CodeTO-220AB
- Gate to Source Voltage (Vgs)20V
- Drain-source On Resistance-Max0.25Ohm
- DS Breakdown Voltage-Min500V
- RoHS StatusRoHS Compliant
IPP50R250CPHKSA1 Overview
Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 1420pF @ 100V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 13A amps.It is [80 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.A turn-on delay time of 35 ns indicates the time it takes for the input capacitance of the device to charge before drain current conduction starts.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.The DS breakdown voltage should be maintained above 500V to maintain normal operation.To operate this transistor, you will need a 500V drain to source voltage (Vdss).A device like this reduces its overall power consumption when it uses drive voltage (10V).
IPP50R250CPHKSA1 Features
a continuous drain current (ID) of 13A
the turn-off delay time is 80 ns
a 500V drain to source voltage (Vdss)
IPP50R250CPHKSA1 Applications
There are a lot of Infineon Technologies
IPP50R250CPHKSA1 applications of single MOSFETs transistors.
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 1420pF @ 100V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 13A amps.It is [80 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.A turn-on delay time of 35 ns indicates the time it takes for the input capacitance of the device to charge before drain current conduction starts.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.The DS breakdown voltage should be maintained above 500V to maintain normal operation.To operate this transistor, you will need a 500V drain to source voltage (Vdss).A device like this reduces its overall power consumption when it uses drive voltage (10V).
IPP50R250CPHKSA1 Features
a continuous drain current (ID) of 13A
the turn-off delay time is 80 ns
a 500V drain to source voltage (Vdss)
IPP50R250CPHKSA1 Applications
There are a lot of Infineon Technologies
IPP50R250CPHKSA1 applications of single MOSFETs transistors.
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
IPP50R250CPHKSA1 More Descriptions
Trans MOSFET N-CH 500V 13A 3-Pin(3 Tab) TO-220AB
MOSFET N-CH 500V 13A TO-220
MOSFET N-CH 500V 13A TO220-3
MOSFET N-CH 500V 13A TO-220
MOSFET N-CH 500V 13A TO220-3
The three parts on the right have similar specifications to IPP50R250CPHKSA1.
-
ImagePart NumberManufacturerMountMounting TypePackage / CaseNumber of PinsTransistor Element MaterialOperating TemperaturePackagingSeriesPublishedPart StatusMoisture Sensitivity Level (MSL)Number of TerminationsTechnologyTerminal PositionNumber of ElementsConfigurationPower Dissipation-MaxOperating ModeCase ConnectionTurn On Delay TimeFET TypeTransistor ApplicationRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsRise TimeDrain to Source Voltage (Vdss)Drive Voltage (Max Rds On,Min Rds On)Vgs (Max)Fall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)JEDEC-95 CodeGate to Source Voltage (Vgs)Drain-source On Resistance-MaxDS Breakdown Voltage-MinRoHS StatusFactory Lead TimeJESD-609 CodePbfree CodeECCN CodeTerminal FinishMax Operating TemperatureMin Operating TemperatureMax Power DissipationPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)Pin CountQualification StatusElement ConfigurationPower DissipationHalogen FreePolarity/Channel TypeMax Dual Supply VoltageDrain to Source Breakdown VoltageInput CapacitanceFET TechnologyDrain to Source ResistanceRds On MaxHeightLengthWidthLead FreePulsed Drain Current-Max (IDM)FET FeatureSurface MountTerminal FormReach Compliance CodeReference StandardJESD-30 CodeDrain Current-Max (Abs) (ID)Avalanche Energy Rating (Eas)View Compare
-
IPP50R250CPHKSA1Through HoleThrough HoleTO-220-33SILICON-55°C~150°C TJTubeCoolMOS™2011Obsolete1 (Unlimited)3MOSFET (Metal Oxide)SINGLE1SINGLE WITH BUILT-IN DIODE114W TcENHANCEMENT MODEISOLATED35 nsN-ChannelSWITCHING250m Ω @ 7.8A, 10V3.5V @ 520μA1420pF @ 100V13A Tc36nC @ 10V14ns500V10V±20V11 ns80 ns13ATO-220AB20V0.25Ohm500VRoHS Compliant------------------------------------
-
Through Hole-TO-2203----2008Not For New Designs1 (Unlimited)3--1--ENHANCEMENT MODEISOLATED35 ns-SWITCHING-----14ns500V--11 ns80 ns13A-20V--ROHS3 Compliant40 Weekse3yesEAR99Tin (Sn)150°C-55°C114WNOT SPECIFIEDNOT SPECIFIED3Not QualifiedSingle114WHalogen FreeN-CHANNEL500V500V1.42nFMETAL-OXIDE SEMICONDUCTOR250mOhm250 mΩ15.95mm10.36mm4.57mmLead Free---------
-
Through HoleThrough HoleTO-220-33SILICON-55°C~150°C TJTubeCoolMOS™2008Active1 (Unlimited)3MOSFET (Metal Oxide)SINGLE1SINGLE WITH BUILT-IN DIODE92W TcENHANCEMENT MODE-8 nsN-ChannelSWITCHING280m Ω @ 4.2A, 13V3.5V @ 350μA773pF @ 100V13A Tc32.6nC @ 10V6.4ns-13V±20V7.6 ns40 ns13ATO-220AB20V0.28Ohm-ROHS3 Compliant18 Weekse3yes-Tin (Sn)---NOT SPECIFIEDNOT SPECIFIED3---Halogen Free-500V--------Lead Free42.9ASuper Junction-------
-
----SILICON---2016Obsolete1 (Unlimited)3-SINGLE1SINGLE WITH BUILT-IN DIODE-ENHANCEMENT MODE----------------TO-220AB-0.0209Ohm120VROHS3 Compliant-e3yesEAR99Tin (Sn)---NOT SPECIFIEDNOT SPECIFIED-----N-CHANNEL---METAL-OXIDE SEMICONDUCTOR------200A-NOTHROUGH-HOLEnot_compliantAEC-Q101R-PSFM-T350A330 mJ
Popular Search Part Number
Related Keywords
Search Tags
Latest News
-
04 January 2024
TPS5430DDAR Converter Replacements, Characteristics, Applications and Development
Ⅰ. What is TPS5430DDAR?Ⅱ. Characteristics of TPS5430DDARⅢ. Specifications of TPS5430DDARⅣ. Market trend of TPS5430DDARⅤ. Pin configuration and functions of TPS5430DDARⅥ. Typical applications of TPS5430DDARⅦ. Development of TPS5430DDARTPS5430DDAR is... -
05 January 2024
N76E003AT20 Microcontroller Manufacturer, Specifications, Features and Package
Ⅰ. Introduction to N76E003AT20Ⅱ. N76E003AT20 manufacturerⅢ. Specifications of N76E003AT20Ⅳ. Features of N76E003AT20Ⅴ. Peripheral equipment and functions of N76E003AT20Ⅵ. Programming and burning of N76E003AT20Ⅶ. Package of N76E003AT20Ⅷ. What are... -
05 January 2024
TXS0108ERGYR Working Principle, Functions, Applications and Other Details
Ⅰ. What is a level translator?Ⅱ. Overview of TXS0108ERGYRⅢ. Working principle and functional block diagram of TXS0108ERGYRⅣ. Technical parameters of TXS0108ERGYRⅤ. Absolute maximum ratings of TXS0108ERGYRⅥ. Functions of... -
08 January 2024
MC34063ADR2G Switching Regulator Working Principle, Specifications and Applications
Ⅰ. MC34063ADR2G descriptionⅡ. Technical parameters of MC34063ADR2GⅢ. How does MC34063ADR2G work?Ⅳ. MC34063ADR2G symbol, footprint and pin configurationⅤ. What are the advantages and disadvantages of MC34063ADR2G?Ⅵ. What are the...
Help you to save your cost and time.
Reliable package for your goods.
Fast Reliable Delivery to save time.
Quality premium after-sale service.