IPP50R250CPHKSA1

Infineon Technologies IPP50R250CPHKSA1

Part Number:
IPP50R250CPHKSA1
Manufacturer:
Infineon Technologies
Ventron No:
2854297-IPP50R250CPHKSA1
Description:
MOSFET N-CH 500V 13A TO-220
ECAD Model:
Datasheet:
IPP50R250CPHKSA1

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Specifications
Infineon Technologies IPP50R250CPHKSA1 technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IPP50R250CPHKSA1.
  • Mount
    Through Hole
  • Mounting Type
    Through Hole
  • Package / Case
    TO-220-3
  • Number of Pins
    3
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Tube
  • Series
    CoolMOS™
  • Published
    2011
  • Part Status
    Obsolete
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    3
  • Technology
    MOSFET (Metal Oxide)
  • Terminal Position
    SINGLE
  • Number of Elements
    1
  • Configuration
    SINGLE WITH BUILT-IN DIODE
  • Power Dissipation-Max
    114W Tc
  • Operating Mode
    ENHANCEMENT MODE
  • Case Connection
    ISOLATED
  • Turn On Delay Time
    35 ns
  • FET Type
    N-Channel
  • Transistor Application
    SWITCHING
  • Rds On (Max) @ Id, Vgs
    250m Ω @ 7.8A, 10V
  • Vgs(th) (Max) @ Id
    3.5V @ 520μA
  • Input Capacitance (Ciss) (Max) @ Vds
    1420pF @ 100V
  • Current - Continuous Drain (Id) @ 25°C
    13A Tc
  • Gate Charge (Qg) (Max) @ Vgs
    36nC @ 10V
  • Rise Time
    14ns
  • Drain to Source Voltage (Vdss)
    500V
  • Drive Voltage (Max Rds On,Min Rds On)
    10V
  • Vgs (Max)
    ±20V
  • Fall Time (Typ)
    11 ns
  • Turn-Off Delay Time
    80 ns
  • Continuous Drain Current (ID)
    13A
  • JEDEC-95 Code
    TO-220AB
  • Gate to Source Voltage (Vgs)
    20V
  • Drain-source On Resistance-Max
    0.25Ohm
  • DS Breakdown Voltage-Min
    500V
  • RoHS Status
    RoHS Compliant
Description
IPP50R250CPHKSA1 Overview
Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 1420pF @ 100V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 13A amps.It is [80 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.A turn-on delay time of 35 ns indicates the time it takes for the input capacitance of the device to charge before drain current conduction starts.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.The DS breakdown voltage should be maintained above 500V to maintain normal operation.To operate this transistor, you will need a 500V drain to source voltage (Vdss).A device like this reduces its overall power consumption when it uses drive voltage (10V).

IPP50R250CPHKSA1 Features
a continuous drain current (ID) of 13A
the turn-off delay time is 80 ns
a 500V drain to source voltage (Vdss)


IPP50R250CPHKSA1 Applications
There are a lot of Infineon Technologies
IPP50R250CPHKSA1 applications of single MOSFETs transistors.


Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
IPP50R250CPHKSA1 More Descriptions
Trans MOSFET N-CH 500V 13A 3-Pin(3 Tab) TO-220AB
MOSFET N-CH 500V 13A TO-220
MOSFET N-CH 500V 13A TO220-3
Product Comparison
The three parts on the right have similar specifications to IPP50R250CPHKSA1.
  • Image
    Part Number
    Manufacturer
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Transistor Element Material
    Operating Temperature
    Packaging
    Series
    Published
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    Technology
    Terminal Position
    Number of Elements
    Configuration
    Power Dissipation-Max
    Operating Mode
    Case Connection
    Turn On Delay Time
    FET Type
    Transistor Application
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Input Capacitance (Ciss) (Max) @ Vds
    Current - Continuous Drain (Id) @ 25°C
    Gate Charge (Qg) (Max) @ Vgs
    Rise Time
    Drain to Source Voltage (Vdss)
    Drive Voltage (Max Rds On,Min Rds On)
    Vgs (Max)
    Fall Time (Typ)
    Turn-Off Delay Time
    Continuous Drain Current (ID)
    JEDEC-95 Code
    Gate to Source Voltage (Vgs)
    Drain-source On Resistance-Max
    DS Breakdown Voltage-Min
    RoHS Status
    Factory Lead Time
    JESD-609 Code
    Pbfree Code
    ECCN Code
    Terminal Finish
    Max Operating Temperature
    Min Operating Temperature
    Max Power Dissipation
    Peak Reflow Temperature (Cel)
    Time@Peak Reflow Temperature-Max (s)
    Pin Count
    Qualification Status
    Element Configuration
    Power Dissipation
    Halogen Free
    Polarity/Channel Type
    Max Dual Supply Voltage
    Drain to Source Breakdown Voltage
    Input Capacitance
    FET Technology
    Drain to Source Resistance
    Rds On Max
    Height
    Length
    Width
    Lead Free
    Pulsed Drain Current-Max (IDM)
    FET Feature
    Surface Mount
    Terminal Form
    Reach Compliance Code
    Reference Standard
    JESD-30 Code
    Drain Current-Max (Abs) (ID)
    Avalanche Energy Rating (Eas)
    View Compare
  • IPP50R250CPHKSA1
    IPP50R250CPHKSA1
    Through Hole
    Through Hole
    TO-220-3
    3
    SILICON
    -55°C~150°C TJ
    Tube
    CoolMOS™
    2011
    Obsolete
    1 (Unlimited)
    3
    MOSFET (Metal Oxide)
    SINGLE
    1
    SINGLE WITH BUILT-IN DIODE
    114W Tc
    ENHANCEMENT MODE
    ISOLATED
    35 ns
    N-Channel
    SWITCHING
    250m Ω @ 7.8A, 10V
    3.5V @ 520μA
    1420pF @ 100V
    13A Tc
    36nC @ 10V
    14ns
    500V
    10V
    ±20V
    11 ns
    80 ns
    13A
    TO-220AB
    20V
    0.25Ohm
    500V
    RoHS Compliant
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • IPP50R250CPXKSA1
    Through Hole
    -
    TO-220
    3
    -
    -
    -
    -
    2008
    Not For New Designs
    1 (Unlimited)
    3
    -
    -
    1
    -
    -
    ENHANCEMENT MODE
    ISOLATED
    35 ns
    -
    SWITCHING
    -
    -
    -
    -
    -
    14ns
    500V
    -
    -
    11 ns
    80 ns
    13A
    -
    20V
    -
    -
    ROHS3 Compliant
    40 Weeks
    e3
    yes
    EAR99
    Tin (Sn)
    150°C
    -55°C
    114W
    NOT SPECIFIED
    NOT SPECIFIED
    3
    Not Qualified
    Single
    114W
    Halogen Free
    N-CHANNEL
    500V
    500V
    1.42nF
    METAL-OXIDE SEMICONDUCTOR
    250mOhm
    250 mΩ
    15.95mm
    10.36mm
    4.57mm
    Lead Free
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • IPP50R280CEXKSA1
    Through Hole
    Through Hole
    TO-220-3
    3
    SILICON
    -55°C~150°C TJ
    Tube
    CoolMOS™
    2008
    Active
    1 (Unlimited)
    3
    MOSFET (Metal Oxide)
    SINGLE
    1
    SINGLE WITH BUILT-IN DIODE
    92W Tc
    ENHANCEMENT MODE
    -
    8 ns
    N-Channel
    SWITCHING
    280m Ω @ 4.2A, 13V
    3.5V @ 350μA
    773pF @ 100V
    13A Tc
    32.6nC @ 10V
    6.4ns
    -
    13V
    ±20V
    7.6 ns
    40 ns
    13A
    TO-220AB
    20V
    0.28Ohm
    -
    ROHS3 Compliant
    18 Weeks
    e3
    yes
    -
    Tin (Sn)
    -
    -
    -
    NOT SPECIFIED
    NOT SPECIFIED
    3
    -
    -
    -
    Halogen Free
    -
    500V
    -
    -
    -
    -
    -
    -
    -
    -
    Lead Free
    42.9A
    Super Junction
    -
    -
    -
    -
    -
    -
    -
  • IPP50N12S3L15AKSA1
    -
    -
    -
    -
    SILICON
    -
    -
    -
    2016
    Obsolete
    1 (Unlimited)
    3
    -
    SINGLE
    1
    SINGLE WITH BUILT-IN DIODE
    -
    ENHANCEMENT MODE
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    TO-220AB
    -
    0.0209Ohm
    120V
    ROHS3 Compliant
    -
    e3
    yes
    EAR99
    Tin (Sn)
    -
    -
    -
    NOT SPECIFIED
    NOT SPECIFIED
    -
    -
    -
    -
    -
    N-CHANNEL
    -
    -
    -
    METAL-OXIDE SEMICONDUCTOR
    -
    -
    -
    -
    -
    -
    200A
    -
    NO
    THROUGH-HOLE
    not_compliant
    AEC-Q101
    R-PSFM-T3
    50A
    330 mJ
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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