Infineon Technologies IPP50R190CE

Name: IPP50R190CE
Brand: Infineon Technologies
SKU: 3554309-IPP50R190CE
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: IPP50R190CE

Manufacturer:: Infineon Technologies

Ventron No:: 3554309-IPP50R190CE

Description:: MOSFET N-CH 500V 18.5A PG-TO-220

ECAD Model:

Datasheet:: IPP50R190CE

Specifications

Infineon Technologies IPP50R190CE technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IPP50R190CE.

Package / Case
PG-TO220-3
Packaging
Tube-packed
RoHS Status
RoHS Compliant

Description

IPP50R190CE Overview
This product is manufactured by Infineon Technologies and belongs to the category of Transistors - FETs, MOSFETs - Single. The images we provide are for reference only, for detailed product information please see specification sheet IPP50R190CE or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of IPP50R190CE. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.

IPP50R190CE More Descriptions

Power Field-Effect Transistor, 500V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

Product Comparison

The three parts on the right have similar specifications to IPP50R190CE.

Image

Part Number

Manufacturer

Package / Case

Packaging

RoHS Status

Mounting Type

Supplier Device Package

Operating Temperature

Series

Published

Part Status

Moisture Sensitivity Level (MSL)

Technology

Power Dissipation-Max

FET Type

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Input Capacitance (Ciss) (Max) @ Vds

Current - Continuous Drain (Id) @ 25°C

Gate Charge (Qg) (Max) @ Vgs

Drain to Source Voltage (Vdss)

Drive Voltage (Max Rds On,Min Rds On)

Vgs (Max)

Factory Lead Time

Mount

Number of Pins

Transistor Element Material

JESD-609 Code

Pbfree Code

Number of Terminations

Terminal Finish

Terminal Position

Peak Reflow Temperature (Cel)

Time@Peak Reflow Temperature-Max (s)

Pin Count

Number of Elements

Configuration

Operating Mode

Turn On Delay Time

Transistor Application

Halogen Free

Rise Time

Fall Time (Typ)

Turn-Off Delay Time

Continuous Drain Current (ID)

JEDEC-95 Code

Gate to Source Voltage (Vgs)

Max Dual Supply Voltage

Drain-source On Resistance-Max

Pulsed Drain Current-Max (IDM)

FET Feature

Lead Free

Surface Mount

ECCN Code

Terminal Form

Reach Compliance Code

Reference Standard

JESD-30 Code

Polarity/Channel Type

Drain Current-Max (Abs) (ID)

DS Breakdown Voltage-Min

Avalanche Energy Rating (Eas)

FET Technology

View Compare
IPP50R190CE

Infineon Technologies

PG-TO220-3

Tube-packed

RoHS Compliant

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-
IPP50R199CPHKSA1

Infineon Technologies

TO-220-3

Tube

ROHS3 Compliant

Through Hole

PG-TO220-3-1

-55°C~150°C TJ

CoolMOS™

2007

Discontinued

1 (Unlimited)

MOSFET (Metal Oxide)

139W Tc

N-Channel

199mOhm @ 9.9A, 10V

3.5V @ 660μA

1800pF @ 100V

17A Tc

45nC @ 10V

550V

10V

±20V

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-

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IPP50R190CE vs IPP50R199CPHKSA1
IPP50R280CEXKSA1

Infineon Technologies

TO-220-3

Tube

ROHS3 Compliant

Through Hole

-

-55°C~150°C TJ

CoolMOS™

2008

Active

1 (Unlimited)

MOSFET (Metal Oxide)

92W Tc

N-Channel

280m Ω @ 4.2A, 13V

3.5V @ 350μA

773pF @ 100V

13A Tc

32.6nC @ 10V

-

13V

±20V

18 Weeks

Through Hole

3

SILICON

e3

yes

3

Tin (Sn)

SINGLE

NOT SPECIFIED

NOT SPECIFIED

3

1

SINGLE WITH BUILT-IN DIODE

ENHANCEMENT MODE

8 ns

SWITCHING

Halogen Free

6.4ns

7.6 ns

40 ns

13A

TO-220AB

20V

500V

0.28Ohm

42.9A

Super Junction

Lead Free

-

-

-

-

-

-

-

-

-

-

-

IPP50R190CE vs IPP50R280CEXKSA1
IPP50N12S3L15AKSA1

Infineon Technologies

-

-

ROHS3 Compliant

-

-

-

-

2016

Obsolete

1 (Unlimited)

-

-

-

-

-

-

-

-

-

-

-

-

-

-

SILICON

e3

yes

3

Tin (Sn)

SINGLE

NOT SPECIFIED

NOT SPECIFIED

-

1

SINGLE WITH BUILT-IN DIODE

ENHANCEMENT MODE

-

-

-

-

-

-

-

TO-220AB

-

-

0.0209Ohm

200A

-

-

NO

EAR99

THROUGH-HOLE

not_compliant

AEC-Q101

R-PSFM-T3

N-CHANNEL

50A

120V

330 mJ

METAL-OXIDE SEMICONDUCTOR

IPP50R190CE vs IPP50N12S3L15AKSA1

Certification

Related parts for IPP50R190CE

IPP50R350CPHKSA1

Infineon Technologies

MOSFET N-CH 500V 10A TO220-3
IPP50R190CE

Infineon Technologies

MOSFET N-CH 500V 18.5A PG-TO-220
IPP50R350CPXKSA1

Infineon Technologies

MOSFET N-CH 550V 10A TO220-3
IPP50R250CPHKSA1

Infineon Technologies

MOSFET N-CH 500V 13A TO-220
IPP50R250CPXKSA1

Infineon Technologies

LOW POWER_LEGACY
IPP50R520CPHKSA1

Infineon Technologies

MOSFET N-CH 550V 7.1A TO-220
IPP50R199CPHKSA1

Infineon Technologies

MOSFET N-CH 550V TO-220
IPP50R280CEXKSA1

Infineon Technologies

MOSFET N-CH 500V 13A PG-TO220
IPP50R399CPHKSA1

Infineon Technologies

MOSFET N-CH 560V 9A TO-220
IPP50N12S3L15AKSA1

Infineon Technologies

MOSFET N-CHANNEL_100

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IPP50R1~~(9)~~
IPP50R~~(31)~~
IPP50~~(36)~~
IPP5~~(41)~~
IPP~~(54)~~

Part Number	Manufacturers	Description	Stock	Price
IPP50R190CEXKSA1 DISTI #	Infineon Technologies AG	Trans MOSFET N-CH 500V 18.5A 3-Pin(3 Tab) TO-220 T RoHS: Compliant	5	5 $2.09
IPP50R190CEXKSA1 DISTI #	Infineon Technologies AG	MOSFET N-CH 500V 18.5A PG-TO-220 RoHS: Compliant	0	1 $2.15 10 $1.96 100 $1.5977 500 $1.26794 1000 $1.07011
IPP50R190CEXKSA1 DISTI #	Infineon Technologies AG	Trans MOSFET N-CH 550V 18.5A 3-Pin TO-220 Tube (Al RoHS: Compliant	2500	500 $0.945 1000 $0.90616 1500 $0.89392 2500 $0.85909 5000 $0.84808 12500 $0.82688 25000 $0.80671
IPP50R190CEXKSA1 DISTI #	Infineon Technologies AG	Trans MOSFET N-CH 550V 18.5A 3-Pin TO-220 Tube - R RoHS: Compliant	0	500 $0.8629 1000 $0.8319 2000 $0.8019 3000 $0.7749 5000 $0.7609
IPP50R190CEXKSA1 DISTI #	Infineon Technologies AG	Trans MOSFET N-CH 550V 18.5A 3-Pin TO-220 Tube (Al RoHS: Compliant	0	1 $1.2479 10 $1.1089 25 $0.9979 50 $0.9069 100 $0.8319 500 $0.7679 1000 $0.7129
IPP50R190CEXKSA1 DISTI #	Infineon Technologies AG	MOSFET Transistor, N Channel, 18.5 A, 500 V, 0.17	0	1 $1.77 10 $1.5 100 $1.2 500 $1.05
IPP50R190CEXKSA1 DISTI #	Infineon Technologies AG	MOSFET N-Ch 500V 18.5A TO220-3 RoHS: Compliant	1586	1 $1.77 10 $1.5 100 $1.2 500 $1.05
IPP50R190CE DISTI #	Infineon Technologies AG	MOSFET N-Ch 500V 18.5A TO220-3 RoHS: Compliant	463	1 $1.77 10 $1.5 100 $1.2 500 $1.05
IPP50R190CEXKSA1 DISTI #	Infineon Technologies AG	MOSFET NCHANNEL 500V 18.5A COOLMOS TO220, TU	190	20 $1.01 100 $0.895 200 $0.838 500 $0.782
IPP50R190CEXKSA1 DISTI #	Infineon Technologies AG	MOSFET NCHANNEL 500V 18.5A COOLMOS TO220, PK	160	10 $1.124 20 $1.01 100 $0.895 200 $0.838 500 $0.782
IPP50R190CEXKSA1 DISTI #	Infineon Technologies AG	MOSFET, N-CH, 500V, 18.5A, TO-220-3 RoHS: Compliant	0	1 $2.81 10 $2.38 100 $1.91 500 $1.66
IPP50R190CEXKSA1 DISTI #	Infineon Technologies AG	MOSFET, N-CH, 500V, 18.5A, TO-220-3 RoHS: Compliant	0	5 $1.05 25 $0.945 100 $0.839 250 $0.787 500 $0.735

Infineon Technologies IPP50R190CE

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