Infineon Technologies IPA60R060C7XKSA1
- Part Number:
- IPA60R060C7XKSA1
- Manufacturer:
- Infineon Technologies
- Ventron No:
- 2851541-IPA60R060C7XKSA1
- Description:
- MOSFET N-CH 600V 16A TO-220FP
- ECAD Model:
-
- Datasheet:
- IPA60R060C7XKSA1
Infineon Technologies IPA60R060C7XKSA1 technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IPA60R060C7XKSA1.
- Factory Lead Time18 Weeks
- MountThrough Hole
- Mounting TypeThrough Hole
- Package / CaseTO-220-3 Full Pack
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTube
- SeriesCoolMOS™ C7
- Published2008
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- Terminal FinishTin (Sn)
- TechnologyMOSFET (Metal Oxide)
- Terminal PositionSINGLE
- Peak Reflow Temperature (Cel)NOT SPECIFIED
- Time@Peak Reflow Temperature-Max (s)NOT SPECIFIED
- JESD-30 CodeR-PSFM-T3
- Number of Elements1
- ConfigurationSINGLE WITH BUILT-IN DIODE
- Power Dissipation-Max34W Tc
- Operating ModeENHANCEMENT MODE
- Case ConnectionISOLATED
- FET TypeN-Channel
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs60m Ω @ 15.9A, 10V
- Vgs(th) (Max) @ Id4V @ 800μA
- Halogen FreeHalogen Free
- Input Capacitance (Ciss) (Max) @ Vds2850pF @ 400V
- Current - Continuous Drain (Id) @ 25°C16A Tc
- Gate Charge (Qg) (Max) @ Vgs68nC @ 10V
- Drive Voltage (Max Rds On,Min Rds On)10V
- Vgs (Max)±20V
- Continuous Drain Current (ID)16A
- JEDEC-95 CodeTO-220AB
- Max Dual Supply Voltage600V
- Drain-source On Resistance-Max0.06Ohm
- Pulsed Drain Current-Max (IDM)135A
- Avalanche Energy Rating (Eas)159 mJ
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
IPA60R060C7XKSA1 Overview
In this case, the MOSFET is susceptible to avalanche breakdown, applied energy is termed avalanche energy, and the avalanche energy rating (Eas) for the MOSFET is 159 mJ.As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 2850pF @ 400V.This device conducts a continuous drain current (ID) of 16A, which is the maximum continuous current transistor can conduct.Pulsed drain current is maximum rated peak drain current 135A.With 600V power, it supports a dual voltage supply of up to maximum.In order to reduce power consumption, this device uses a drive voltage of 10V volts (10V).
IPA60R060C7XKSA1 Features
the avalanche energy rating (Eas) is 159 mJ
a continuous drain current (ID) of 16A
based on its rated peak drain current 135A.
IPA60R060C7XKSA1 Applications
There are a lot of Infineon Technologies
IPA60R060C7XKSA1 applications of single MOSFETs transistors.
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
In this case, the MOSFET is susceptible to avalanche breakdown, applied energy is termed avalanche energy, and the avalanche energy rating (Eas) for the MOSFET is 159 mJ.As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 2850pF @ 400V.This device conducts a continuous drain current (ID) of 16A, which is the maximum continuous current transistor can conduct.Pulsed drain current is maximum rated peak drain current 135A.With 600V power, it supports a dual voltage supply of up to maximum.In order to reduce power consumption, this device uses a drive voltage of 10V volts (10V).
IPA60R060C7XKSA1 Features
the avalanche energy rating (Eas) is 159 mJ
a continuous drain current (ID) of 16A
based on its rated peak drain current 135A.
IPA60R060C7XKSA1 Applications
There are a lot of Infineon Technologies
IPA60R060C7XKSA1 applications of single MOSFETs transistors.
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
IPA60R060C7XKSA1 More Descriptions
Multilayer Ceramic Capacitors MLCC - SMD/SMT 0402 7.3pF 50volts C0G /-0.05pF
Power Field-Effect Transistor, 16A I(D), 600V, 0.06ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
The new 600V CoolMOS C7 series from Infineon offers a ~50% reduction in turn-off losses (E oss ) compared to the CoolMOS CP, offering an outstanding level of performance in PFC, TTF and other hard-switching topologies. | Summary of Features: Reduced switching loss parameters such as Q G, C oss, E oss; Best-in-class figure of merit Q G*R DS(on); Increased switching frequency; Best R (on)*A in the world; Rugged body diode | Benefits: Enables increasing switching frequency without loss in efficiency; Measure showing key parameter for light load and full load efficiency; Doubling the switching frequency will half the size of magnetic components; Smaller packages for same R DS(on); Can be used in many more positions for both hard and soft switching topologies | Target Applications: Server; Telecom; PC power; Solar; Industrial
Power Field-Effect Transistor, 16A I(D), 600V, 0.06ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
The new 600V CoolMOS C7 series from Infineon offers a ~50% reduction in turn-off losses (E oss ) compared to the CoolMOS CP, offering an outstanding level of performance in PFC, TTF and other hard-switching topologies. | Summary of Features: Reduced switching loss parameters such as Q G, C oss, E oss; Best-in-class figure of merit Q G*R DS(on); Increased switching frequency; Best R (on)*A in the world; Rugged body diode | Benefits: Enables increasing switching frequency without loss in efficiency; Measure showing key parameter for light load and full load efficiency; Doubling the switching frequency will half the size of magnetic components; Smaller packages for same R DS(on); Can be used in many more positions for both hard and soft switching topologies | Target Applications: Server; Telecom; PC power; Solar; Industrial
The three parts on the right have similar specifications to IPA60R060C7XKSA1.
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ImagePart NumberManufacturerFactory Lead TimeMountMounting TypePackage / CaseTransistor Element MaterialOperating TemperaturePackagingSeriesPublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsTerminal FinishTechnologyTerminal PositionPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)JESD-30 CodeNumber of ElementsConfigurationPower Dissipation-MaxOperating ModeCase ConnectionFET TypeTransistor ApplicationRds On (Max) @ Id, VgsVgs(th) (Max) @ IdHalogen FreeInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsDrive Voltage (Max Rds On,Min Rds On)Vgs (Max)Continuous Drain Current (ID)JEDEC-95 CodeMax Dual Supply VoltageDrain-source On Resistance-MaxPulsed Drain Current-Max (IDM)Avalanche Energy Rating (Eas)RoHS StatusLead FreeNumber of PinsTurn On Delay TimeRise TimeFall Time (Typ)Turn-Off Delay TimeGate to Source Voltage (Vgs)Drain Current-Max (Abs) (ID)ECCN CodeSurface MountPin CountQualification StatusDrain to Source Voltage (Vdss)DS Breakdown Voltage-MinView Compare
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IPA60R060C7XKSA118 WeeksThrough HoleThrough HoleTO-220-3 Full PackSILICON-55°C~150°C TJTubeCoolMOS™ C72008e3yesActive1 (Unlimited)3Tin (Sn)MOSFET (Metal Oxide)SINGLENOT SPECIFIEDNOT SPECIFIEDR-PSFM-T31SINGLE WITH BUILT-IN DIODE34W TcENHANCEMENT MODEISOLATEDN-ChannelSWITCHING60m Ω @ 15.9A, 10V4V @ 800μAHalogen Free2850pF @ 400V16A Tc68nC @ 10V10V±20V16ATO-220AB600V0.06Ohm135A159 mJROHS3 CompliantLead Free-------------- -
18 WeeksThrough HoleThrough HoleTO-220-3 Full PackSILICON-55°C~150°C TJTubeCoolMOS™ C72005e3-Active1 (Unlimited)3Tin (Sn)MOSFET (Metal Oxide)SINGLENOT SPECIFIEDNOT SPECIFIED-1SINGLE WITH BUILT-IN DIODE34W TcENHANCEMENT MODEISOLATEDN-ChannelSWITCHING65m Ω @ 17.1A, 10V4V @ 850μAHalogen Free3020pF @ 400V15A Tc64nC @ 10V10V±20V15ATO-220AB650V0.065Ohm145A171 mJROHS3 CompliantLead Free317 ns14ns7 ns72 ns20V19A------
-
18 WeeksThrough HoleThrough HoleTO-220-3 Full Pack--55°C~150°C TJTubeCoolMOS™ P62008e3yesActive1 (Unlimited)-Tin (Sn)MOSFET (Metal Oxide)-NOT SPECIFIEDNOT SPECIFIED---34W Tc--N-Channel-99m Ω @ 14.5A, 10V4.5V @ 1.21mAHalogen Free3330pF @ 100V37.9A Tc70nC @ 10V10V±20V37.9A-600V---ROHS3 CompliantLead Free320 ns10ns5 ns50 ns30V-EAR99-----
-
12 Weeks-Through HoleTO-220-3 Full PackSILICON-55°C~150°C TJTubeCoolMOS™2008e3yesNot For New Designs1 (Unlimited)3Tin (Sn)MOSFET (Metal Oxide)SINGLENOT SPECIFIEDNOT SPECIFIEDR-PSFM-T31SINGLE WITH BUILT-IN DIODE33W TcENHANCEMENT MODEISOLATEDN-ChannelSWITCHING299m Ω @ 6.6A, 10V3.5V @ 440μA-1100pF @ 100V11A Tc29nC @ 10V10V±20V-TO-220AB-0.299Ohm34A290 mJROHS3 Compliant-------11A-NO3Not Qualified600V600V
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