Infineon Technologies IPA60R125P6XKSA1
- Part Number:
- IPA60R125P6XKSA1
- Manufacturer:
- Infineon Technologies
- Ventron No:
- 3586414-IPA60R125P6XKSA1
- Description:
- MOSFET N-CH 600V TO220FP-3
- ECAD Model:
-
- Datasheet:
- IPA60R125P6XKSA1
Infineon Technologies IPA60R125P6XKSA1 technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IPA60R125P6XKSA1.
- Factory Lead Time18 Weeks
- MountThrough Hole
- Mounting TypeThrough Hole
- Package / CaseTO-220-3 Full Pack
- Number of Pins3
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTube
- SeriesCoolMOS™ P6
- Published2008
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- Terminal FinishTin (Sn)
- TechnologyMOSFET (Metal Oxide)
- Terminal PositionSINGLE
- Peak Reflow Temperature (Cel)NOT SPECIFIED
- Time@Peak Reflow Temperature-Max (s)NOT SPECIFIED
- Number of Elements1
- ConfigurationSINGLE WITH BUILT-IN DIODE
- Power Dissipation-Max34W Tc
- Operating ModeENHANCEMENT MODE
- Case ConnectionISOLATED
- Turn On Delay Time14 ns
- FET TypeN-Channel
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs125m Ω @ 11.6A, 10V
- Vgs(th) (Max) @ Id4.5V @ 960μA
- Halogen FreeHalogen Free
- Input Capacitance (Ciss) (Max) @ Vds2660pF @ 100V
- Current - Continuous Drain (Id) @ 25°C30A Tc
- Gate Charge (Qg) (Max) @ Vgs56nC @ 10V
- Rise Time9ns
- Drive Voltage (Max Rds On,Min Rds On)10V
- Vgs (Max)±20V
- Fall Time (Typ)5 ns
- Turn-Off Delay Time44 ns
- Continuous Drain Current (ID)30A
- JEDEC-95 CodeTO-220AB
- Gate to Source Voltage (Vgs)30V
- Max Dual Supply Voltage600V
- Drain-source On Resistance-Max0.125Ohm
- Pulsed Drain Current-Max (IDM)87A
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
IPA60R125P6XKSA1 Overview
Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 2660pF @ 100V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 30A amps.It is [44 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.As far as peak drain current is concerned, its maximum pulsed current is 87A.A turn-on delay time of 14 ns indicates the time it takes for the input capacitance of the device to charge before drain current conduction starts.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 30V.As it is powered by 600V, it can support the maximum dual supply voltage.A device like this reduces its overall power consumption when it uses drive voltage (10V).
IPA60R125P6XKSA1 Features
a continuous drain current (ID) of 30A
the turn-off delay time is 44 ns
based on its rated peak drain current 87A.
IPA60R125P6XKSA1 Applications
There are a lot of Infineon Technologies
IPA60R125P6XKSA1 applications of single MOSFETs transistors.
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 2660pF @ 100V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 30A amps.It is [44 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.As far as peak drain current is concerned, its maximum pulsed current is 87A.A turn-on delay time of 14 ns indicates the time it takes for the input capacitance of the device to charge before drain current conduction starts.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 30V.As it is powered by 600V, it can support the maximum dual supply voltage.A device like this reduces its overall power consumption when it uses drive voltage (10V).
IPA60R125P6XKSA1 Features
a continuous drain current (ID) of 30A
the turn-off delay time is 44 ns
based on its rated peak drain current 87A.
IPA60R125P6XKSA1 Applications
There are a lot of Infineon Technologies
IPA60R125P6XKSA1 applications of single MOSFETs transistors.
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
IPA60R125P6XKSA1 More Descriptions
Single N-Channel 600 V 125 mOhm 56 nC CoolMOS Power Mosfet - TO-220-3FP
Transistor MOSFET N-Channel 600V 30A 3-Pin TO-220FP Tube
Mosfet, N-Ch, 600V, 30A, To-220Fp; Transistor Polarity:N Channel; Continuous Drain Current Id:30A; Drain Source Voltage Vds:600V; On Resistance Rds(On):0.113Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power Rohs Compliant: Yes |Infineon IPA60R125P6XKSA1
Infineons CoolMOS™ P6 superjunction MOSFET family is designed to enable higher system efficiency whilst being easy to design in, PG-TO220-3, RoHSInfineon SCT
Infineons CoolMOS P6 product family is designed to enable higher system efficiency whilst being easy to design in. CoolMOS P6 closes the gap between technologies which focus on delivering ultimate performance and those which concentrate more on ease-of-use. | Summary of Features: Reduced gate charge (Q g); Higher V th; Good body diode ruggedness; Optimized integrated R g; Improved dv/dt from 50V/ns; CoolMOS quality with over 12 years manufacturing experience in superjunction technology | Benefits: Improved effciency especially in light load condition; Better efficiency in soft switching applications due to earlier turn-off; Suitable for hard- & soft-switching topologies; Optimized balance of efficiency and ease of use and good controllability of switching behavior; High robustness and better efficiency; Outstanding quality & reliability | Target Applications: PFC stages for server, telecom rectifier, PC silverbox, gaming consoles; PWM stages (TTF, LLC) for server, telecom rectifier, PC silverbox, gaming consoles
Transistor MOSFET N-Channel 600V 30A 3-Pin TO-220FP Tube
Mosfet, N-Ch, 600V, 30A, To-220Fp; Transistor Polarity:N Channel; Continuous Drain Current Id:30A; Drain Source Voltage Vds:600V; On Resistance Rds(On):0.113Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power Rohs Compliant: Yes |Infineon IPA60R125P6XKSA1
Infineons CoolMOS™ P6 superjunction MOSFET family is designed to enable higher system efficiency whilst being easy to design in, PG-TO220-3, RoHSInfineon SCT
Infineons CoolMOS P6 product family is designed to enable higher system efficiency whilst being easy to design in. CoolMOS P6 closes the gap between technologies which focus on delivering ultimate performance and those which concentrate more on ease-of-use. | Summary of Features: Reduced gate charge (Q g); Higher V th; Good body diode ruggedness; Optimized integrated R g; Improved dv/dt from 50V/ns; CoolMOS quality with over 12 years manufacturing experience in superjunction technology | Benefits: Improved effciency especially in light load condition; Better efficiency in soft switching applications due to earlier turn-off; Suitable for hard- & soft-switching topologies; Optimized balance of efficiency and ease of use and good controllability of switching behavior; High robustness and better efficiency; Outstanding quality & reliability | Target Applications: PFC stages for server, telecom rectifier, PC silverbox, gaming consoles; PWM stages (TTF, LLC) for server, telecom rectifier, PC silverbox, gaming consoles
The three parts on the right have similar specifications to IPA60R125P6XKSA1.
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ImagePart NumberManufacturerFactory Lead TimeMountMounting TypePackage / CaseNumber of PinsTransistor Element MaterialOperating TemperaturePackagingSeriesPublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeTerminal FinishTechnologyTerminal PositionPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)Number of ElementsConfigurationPower Dissipation-MaxOperating ModeCase ConnectionTurn On Delay TimeFET TypeTransistor ApplicationRds On (Max) @ Id, VgsVgs(th) (Max) @ IdHalogen FreeInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsRise TimeDrive Voltage (Max Rds On,Min Rds On)Vgs (Max)Fall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)JEDEC-95 CodeGate to Source Voltage (Vgs)Max Dual Supply VoltageDrain-source On Resistance-MaxPulsed Drain Current-Max (IDM)RoHS StatusLead FreeSurface MountMax Operating TemperatureMin Operating TemperatureSubcategoryTerminal FormPin CountQualification StatusElement ConfigurationPolarity/Channel TypeDrain to Source Breakdown VoltageFET TechnologyDrain to Source ResistanceRds On MaxCapacitance - InputHeightLengthWidthSupplier Device PackageDrain to Source Voltage (Vdss)View Compare
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IPA60R125P6XKSA118 WeeksThrough HoleThrough HoleTO-220-3 Full Pack3SILICON-55°C~150°C TJTubeCoolMOS™ P62008e3yesActive1 (Unlimited)3EAR99Tin (Sn)MOSFET (Metal Oxide)SINGLENOT SPECIFIEDNOT SPECIFIED1SINGLE WITH BUILT-IN DIODE34W TcENHANCEMENT MODEISOLATED14 nsN-ChannelSWITCHING125m Ω @ 11.6A, 10V4.5V @ 960μAHalogen Free2660pF @ 100V30A Tc56nC @ 10V9ns10V±20V5 ns44 ns30ATO-220AB30V600V0.125Ohm87AROHS3 CompliantLead Free-------------------- -
12 Weeks--TO-220-33----2011-yesActive-3----NOT SPECIFIEDNOT SPECIFIED1-29WENHANCEMENT MODEISOLATED13 ns-SWITCHING--Halogen Free---10ns--14 ns85 ns8.1ATO-220AB20V--22ARoHS CompliantLead FreeNO150°C-55°CFET General Purpose PowerTHROUGH-HOLE3Not QualifiedSingleN-CHANNEL600VMETAL-OXIDE SEMICONDUCTOR520mOhm520 mΩ512pF16.15mm10.65mm4.85mm--
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---PG-TO220-3---Tube-packed--------------------------------------RoHS Compliant--------------------
-
--Through HoleTO-220-3 Full Pack---55°C~150°C TJTubeCoolMOS™---Obsolete1 (Unlimited)---MOSFET (Metal Oxide)-----30W Tc---N-Channel-520mOhm @ 3.8A, 10V3.5V @ 250μA-630pF @ 100V6.8A Tc31nC @ 10V-10V±20V--------ROHS3 Compliant------------------PG-TO220-FP600V
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