Infineon Technologies IPA60R600CPXKSA1
- Part Number:
- IPA60R600CPXKSA1
- Manufacturer:
- Infineon Technologies
- Ventron No:
- 3071814-IPA60R600CPXKSA1
- Description:
- MOSFET N-CH 600V 6.1A TO220-3
- ECAD Model:
-
- Datasheet:
- IPA60R600CPXKSA1
Infineon Technologies IPA60R600CPXKSA1 technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IPA60R600CPXKSA1.
- Mounting TypeThrough Hole
- Package / CaseTO-220-3 Full Pack
- Surface MountNO
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTube
- SeriesCoolMOS™
- Published2008
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- Terminal FinishTin (Sn)
- TechnologyMOSFET (Metal Oxide)
- Terminal PositionSINGLE
- Peak Reflow Temperature (Cel)NOT SPECIFIED
- Reach Compliance Codecompliant
- Time@Peak Reflow Temperature-Max (s)NOT SPECIFIED
- Pin Count3
- JESD-30 CodeR-PSFM-T3
- Qualification StatusNot Qualified
- Number of Elements1
- ConfigurationSINGLE WITH BUILT-IN DIODE
- Power Dissipation-Max28W Tc
- Operating ModeENHANCEMENT MODE
- Case ConnectionISOLATED
- FET TypeN-Channel
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs600m Ω @ 3.3A, 10V
- Vgs(th) (Max) @ Id3.5V @ 220μA
- Input Capacitance (Ciss) (Max) @ Vds550pF @ 100V
- Current - Continuous Drain (Id) @ 25°C6.1A Tc
- Gate Charge (Qg) (Max) @ Vgs27nC @ 10V
- Drain to Source Voltage (Vdss)600V
- Drive Voltage (Max Rds On,Min Rds On)10V
- Vgs (Max)±20V
- JEDEC-95 CodeTO-220AB
- Drain Current-Max (Abs) (ID)6.1A
- Drain-source On Resistance-Max0.6Ohm
- Pulsed Drain Current-Max (IDM)15A
- DS Breakdown Voltage-Min600V
- Avalanche Energy Rating (Eas)144 mJ
- RoHS StatusRoHS Compliant
IPA60R600CPXKSA1 Overview
This type of breakdown is known as "avalanche breakdown", and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 144 mJ.The maximum input capacitance of this device is 550pF @ 100V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.As shown in the table below, the drain current of this device is 6.1A.There is no pulsed drain current maximum for this device based on its rated peak drain current 15A.To maintain normal operation, it's recommended that the DS breakdown voltage be kept above 600V.The drain-to-source voltage (Vdss) of this transistor needs to be at 600V in order to operate.Using drive voltage (10V), this device helps reduce its power consumption.
IPA60R600CPXKSA1 Features
the avalanche energy rating (Eas) is 144 mJ
based on its rated peak drain current 15A.
a 600V drain to source voltage (Vdss)
IPA60R600CPXKSA1 Applications
There are a lot of Infineon Technologies
IPA60R600CPXKSA1 applications of single MOSFETs transistors.
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
This type of breakdown is known as "avalanche breakdown", and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 144 mJ.The maximum input capacitance of this device is 550pF @ 100V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.As shown in the table below, the drain current of this device is 6.1A.There is no pulsed drain current maximum for this device based on its rated peak drain current 15A.To maintain normal operation, it's recommended that the DS breakdown voltage be kept above 600V.The drain-to-source voltage (Vdss) of this transistor needs to be at 600V in order to operate.Using drive voltage (10V), this device helps reduce its power consumption.
IPA60R600CPXKSA1 Features
the avalanche energy rating (Eas) is 144 mJ
based on its rated peak drain current 15A.
a 600V drain to source voltage (Vdss)
IPA60R600CPXKSA1 Applications
There are a lot of Infineon Technologies
IPA60R600CPXKSA1 applications of single MOSFETs transistors.
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
IPA60R600CPXKSA1 More Descriptions
Trans MOSFET N-CH 600V 6.1A 3-Pin(3 Tab) TO-220FP Tube
MOSFET, N, TO-220; Transistor Type:Power MOSFET; Transistor Polarity:N; Voltage, Vds Typ:650V; Current, Id Cont:6.1A; On State Resistance:0.6ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:3V; Case Style:TO-220; ;RoHS Compliant: Yes
MOSFET, N, TO-220; Transistor Polarity: N Channel; Continuous Drain Current Id: 6.1A; Drain Source Voltage Vds: 650V; On Resistance Rds(on): 0.54ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3V; Power Dissipation Pd: 28W; Transistor Case Style: TO-220; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: -; SVHC: No SVHC (27-Jun-2018); Current Id Max: 6.1A; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to 150°C; Termination Type: Through Hole; Transistor Type: Power MOSFET; Voltage Vds Typ: 650V; Voltage Vgs Max: 20V; Voltage Vgs Rds on Measurement: 10V
CoolMOS CP, Infineon's fifth series of CoolMOS, is designed for hard and soft switching topologies, CCM PFC as well as PWM for ATX, notebook adapter PDP and LCD TV. | Summary of Features: Lowest figure of merit R on x Q g; Ultra low gate charge; Extreme dv/dt rate; Ultra low R DS(on), ultra low gate charge, very fast switching; V th 3 V, g fs very high, internal R g very low; High current capability; Significant reduction of conduction and switching losses; High power density and efficiency for superior power conversion systems; Best-in-class price/performance ratio | Target Applications: Solar; Server; Telecom; Consumer; Adapter; PC power
MOSFET, N, TO-220; Transistor Type:Power MOSFET; Transistor Polarity:N; Voltage, Vds Typ:650V; Current, Id Cont:6.1A; On State Resistance:0.6ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:3V; Case Style:TO-220; ;RoHS Compliant: Yes
MOSFET, N, TO-220; Transistor Polarity: N Channel; Continuous Drain Current Id: 6.1A; Drain Source Voltage Vds: 650V; On Resistance Rds(on): 0.54ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3V; Power Dissipation Pd: 28W; Transistor Case Style: TO-220; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: -; SVHC: No SVHC (27-Jun-2018); Current Id Max: 6.1A; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to 150°C; Termination Type: Through Hole; Transistor Type: Power MOSFET; Voltage Vds Typ: 650V; Voltage Vgs Max: 20V; Voltage Vgs Rds on Measurement: 10V
CoolMOS CP, Infineon's fifth series of CoolMOS, is designed for hard and soft switching topologies, CCM PFC as well as PWM for ATX, notebook adapter PDP and LCD TV. | Summary of Features: Lowest figure of merit R on x Q g; Ultra low gate charge; Extreme dv/dt rate; Ultra low R DS(on), ultra low gate charge, very fast switching; V th 3 V, g fs very high, internal R g very low; High current capability; Significant reduction of conduction and switching losses; High power density and efficiency for superior power conversion systems; Best-in-class price/performance ratio | Target Applications: Solar; Server; Telecom; Consumer; Adapter; PC power
The three parts on the right have similar specifications to IPA60R600CPXKSA1.
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ImagePart NumberManufacturerMounting TypePackage / CaseSurface MountTransistor Element MaterialOperating TemperaturePackagingSeriesPublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeTerminal FinishTechnologyTerminal PositionPeak Reflow Temperature (Cel)Reach Compliance CodeTime@Peak Reflow Temperature-Max (s)Pin CountJESD-30 CodeQualification StatusNumber of ElementsConfigurationPower Dissipation-MaxOperating ModeCase ConnectionFET TypeTransistor ApplicationRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsDrain to Source Voltage (Vdss)Drive Voltage (Max Rds On,Min Rds On)Vgs (Max)JEDEC-95 CodeDrain Current-Max (Abs) (ID)Drain-source On Resistance-MaxPulsed Drain Current-Max (IDM)DS Breakdown Voltage-MinAvalanche Energy Rating (Eas)RoHS StatusFactory Lead TimeNumber of PinsMax Operating TemperatureMin Operating TemperatureSubcategoryTerminal FormElement ConfigurationTurn On Delay TimeHalogen FreeRise TimePolarity/Channel TypeFall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)Gate to Source Voltage (Vgs)Drain to Source Breakdown VoltageFET TechnologyDrain to Source ResistanceRds On MaxCapacitance - InputHeightLengthWidthLead FreeMountMax Dual Supply VoltageSupplier Device PackageView Compare
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IPA60R600CPXKSA1Through HoleTO-220-3 Full PackNOSILICON-55°C~150°C TJTubeCoolMOS™2008e3yesObsolete1 (Unlimited)3EAR99Tin (Sn)MOSFET (Metal Oxide)SINGLENOT SPECIFIEDcompliantNOT SPECIFIED3R-PSFM-T3Not Qualified1SINGLE WITH BUILT-IN DIODE28W TcENHANCEMENT MODEISOLATEDN-ChannelSWITCHING600m Ω @ 3.3A, 10V3.5V @ 220μA550pF @ 100V6.1A Tc27nC @ 10V600V10V±20VTO-220AB6.1A0.6Ohm15A600V144 mJRoHS Compliant---------------------------- -
-TO-220-3NO----2011-yesActive-3----NOT SPECIFIED-NOT SPECIFIED3-Not Qualified1-29WENHANCEMENT MODEISOLATED-SWITCHING--------TO-220AB--22A--RoHS Compliant12 Weeks3150°C-55°CFET General Purpose PowerTHROUGH-HOLESingle13 nsHalogen Free10nsN-CHANNEL14 ns85 ns8.1A20V600VMETAL-OXIDE SEMICONDUCTOR520mOhm520 mΩ512pF16.15mm10.65mm4.85mmLead Free---
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Through HoleTO-220-3 Full Pack---55°C~150°C TJTubeCoolMOS™ P62008e3yesActive1 (Unlimited)-EAR99Tin (Sn)MOSFET (Metal Oxide)-NOT SPECIFIED-NOT SPECIFIED-----34W Tc--N-Channel-99m Ω @ 14.5A, 10V4.5V @ 1.21mA3330pF @ 100V37.9A Tc70nC @ 10V-10V±20V------ROHS3 Compliant18 Weeks3-----20 nsHalogen Free10ns-5 ns50 ns37.9A30V--------Lead FreeThrough Hole600V-
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Through HoleTO-220-3 Full Pack---55°C~150°C TJTubeCoolMOS™---Obsolete1 (Unlimited)---MOSFET (Metal Oxide)---------30W Tc--N-Channel-520mOhm @ 3.8A, 10V3.5V @ 250μA630pF @ 100V6.8A Tc31nC @ 10V600V10V±20V------ROHS3 Compliant--------------------------PG-TO220-FP
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