Infineon Technologies IPA60R199CPXKSA1
- Part Number:
- IPA60R199CPXKSA1
- Manufacturer:
- Infineon Technologies
- Ventron No:
- 3070277-IPA60R199CPXKSA1
- Description:
- MOSFET N-CH 650V 16A TO220-3
- Datasheet:
- IPA60R199CPXKSA1
Infineon Technologies IPA60R199CPXKSA1 technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IPA60R199CPXKSA1.
- Factory Lead Time16 Weeks
- MountThrough Hole
- Mounting TypeThrough Hole
- Package / CaseTO-220-3 Full Pack
- Number of Pins3
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTube
- SeriesCoolMOS™
- Published2007
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusNot For New Designs
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- Terminal FinishTin (Sn)
- TechnologyMOSFET (Metal Oxide)
- Terminal PositionSINGLE
- Peak Reflow Temperature (Cel)NOT SPECIFIED
- Time@Peak Reflow Temperature-Max (s)NOT SPECIFIED
- Pin Count3
- Qualification StatusNot Qualified
- Number of Elements1
- ConfigurationSINGLE WITH BUILT-IN DIODE
- Power Dissipation-Max34W Tc
- Operating ModeENHANCEMENT MODE
- Power Dissipation34W
- Case ConnectionISOLATED
- Turn On Delay Time10 ns
- FET TypeN-Channel
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs199m Ω @ 9.9A, 10V
- Vgs(th) (Max) @ Id3.5V @ 1.1mA
- Halogen FreeHalogen Free
- Input Capacitance (Ciss) (Max) @ Vds1520pF @ 100V
- Current - Continuous Drain (Id) @ 25°C16A Tc
- Gate Charge (Qg) (Max) @ Vgs43nC @ 10V
- Rise Time5ns
- Drain to Source Voltage (Vdss)650V
- Drive Voltage (Max Rds On,Min Rds On)10V
- Vgs (Max)±20V
- Turn-Off Delay Time50 ns
- Continuous Drain Current (ID)16A
- JEDEC-95 CodeTO-220AB
- Gate to Source Voltage (Vgs)20V
- Max Dual Supply Voltage600V
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
IPA60R199CPXKSA1 Overview
CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 1520pF @ 100V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.As a result of its turn-off delay time, which is 50 ns, the device has taken time to charge its input capacitance before drain current conduction begins.Input capacitance charge delays drain current conduction until the time it takes to charge input capacitance reaches 10 ns.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 20VV.The maximum dual supply voltage can be supported by 600V.The transistor must receive a 650V drain to source voltage (Vdss) in order to function.In addition to reducing power consumption, this device uses drive voltage (10V).
IPA60R199CPXKSA1 Features
a continuous drain current (ID) of 16A
the turn-off delay time is 50 ns
a 650V drain to source voltage (Vdss)
IPA60R199CPXKSA1 Applications
There are a lot of Infineon Technologies
IPA60R199CPXKSA1 applications of single MOSFETs transistors.
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
Lighting, Server, Telecom and UPS.
CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 1520pF @ 100V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.As a result of its turn-off delay time, which is 50 ns, the device has taken time to charge its input capacitance before drain current conduction begins.Input capacitance charge delays drain current conduction until the time it takes to charge input capacitance reaches 10 ns.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 20VV.The maximum dual supply voltage can be supported by 600V.The transistor must receive a 650V drain to source voltage (Vdss) in order to function.In addition to reducing power consumption, this device uses drive voltage (10V).
IPA60R199CPXKSA1 Features
a continuous drain current (ID) of 16A
the turn-off delay time is 50 ns
a 650V drain to source voltage (Vdss)
IPA60R199CPXKSA1 Applications
There are a lot of Infineon Technologies
IPA60R199CPXKSA1 applications of single MOSFETs transistors.
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
Lighting, Server, Telecom and UPS.
IPA60R199CPXKSA1 More Descriptions
Trans MOSFET N-CH 600V 16A 3-Pin(3 Tab) TO-220FP Tube
CoolMOS CP, Infineon's fifth series of CoolMOS, is designed for hard and soft switching topologies, CCM PFC as well as PWM for ATX, notebook adapter PDP and LCD TV. | Summary of Features: Lowest figure of merit R on x Q g; Ultra low gate charge; Extreme dv/dt rate; Ultra low R DS(on), ultra low gate charge, very fast switching; V th 3 V, g fs very high, internal R g very low; High current capability; Significant reduction of conduction and switching losses; High power density and efficiency for superior power conversion systems; Best-in-class price/performance ratio | Target Applications: Solar; Server; Telecom; Consumer; Adapter; PC power
MOSFET, N, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:16A; Drain Source Voltage Vds:650V; On Resistance Rds(on):199mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:3V; Power Dissipation Pd:34W; Operating Temperature Range:-55°C to 150°C; Transistor Case Style:TO-220; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Id Max:16A; Package / Case:TO-220; Power Dissipation Pd:34W; Termination Type:Through Hole; Transistor Type:Power MOSFET; Voltage Vds Typ:650V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V
CoolMOS CP, Infineon's fifth series of CoolMOS, is designed for hard and soft switching topologies, CCM PFC as well as PWM for ATX, notebook adapter PDP and LCD TV. | Summary of Features: Lowest figure of merit R on x Q g; Ultra low gate charge; Extreme dv/dt rate; Ultra low R DS(on), ultra low gate charge, very fast switching; V th 3 V, g fs very high, internal R g very low; High current capability; Significant reduction of conduction and switching losses; High power density and efficiency for superior power conversion systems; Best-in-class price/performance ratio | Target Applications: Solar; Server; Telecom; Consumer; Adapter; PC power
MOSFET, N, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:16A; Drain Source Voltage Vds:650V; On Resistance Rds(on):199mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:3V; Power Dissipation Pd:34W; Operating Temperature Range:-55°C to 150°C; Transistor Case Style:TO-220; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Id Max:16A; Package / Case:TO-220; Power Dissipation Pd:34W; Termination Type:Through Hole; Transistor Type:Power MOSFET; Voltage Vds Typ:650V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V
The three parts on the right have similar specifications to IPA60R199CPXKSA1.
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ImagePart NumberManufacturerFactory Lead TimeMountMounting TypePackage / CaseNumber of PinsTransistor Element MaterialOperating TemperaturePackagingSeriesPublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeTerminal FinishTechnologyTerminal PositionPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)Pin CountQualification StatusNumber of ElementsConfigurationPower Dissipation-MaxOperating ModePower DissipationCase ConnectionTurn On Delay TimeFET TypeTransistor ApplicationRds On (Max) @ Id, VgsVgs(th) (Max) @ IdHalogen FreeInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsRise TimeDrain to Source Voltage (Vdss)Drive Voltage (Max Rds On,Min Rds On)Vgs (Max)Turn-Off Delay TimeContinuous Drain Current (ID)JEDEC-95 CodeGate to Source Voltage (Vgs)Max Dual Supply VoltageRoHS StatusLead FreeFall Time (Typ)Drain-source On Resistance-MaxPulsed Drain Current-Max (IDM)View Compare
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IPA60R199CPXKSA116 WeeksThrough HoleThrough HoleTO-220-3 Full Pack3SILICON-55°C~150°C TJTubeCoolMOS™2007e3yesNot For New Designs1 (Unlimited)3EAR99Tin (Sn)MOSFET (Metal Oxide)SINGLENOT SPECIFIEDNOT SPECIFIED3Not Qualified1SINGLE WITH BUILT-IN DIODE34W TcENHANCEMENT MODE34WISOLATED10 nsN-ChannelSWITCHING199m Ω @ 9.9A, 10V3.5V @ 1.1mAHalogen Free1520pF @ 100V16A Tc43nC @ 10V5ns650V10V±20V50 ns16ATO-220AB20V600VROHS3 CompliantLead Free----
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18 WeeksThrough HoleThrough HoleTO-220-3 Full Pack3SILICON-55°C~150°C TJTubeCoolMOS™ P62008e3yesActive1 (Unlimited)3EAR99Tin (Sn)MOSFET (Metal Oxide)SINGLENOT SPECIFIEDNOT SPECIFIED--1SINGLE WITH BUILT-IN DIODE34W TcENHANCEMENT MODE-ISOLATED14 nsN-ChannelSWITCHING125m Ω @ 11.6A, 10V4.5V @ 960μAHalogen Free2660pF @ 100V30A Tc56nC @ 10V9ns-10V±20V44 ns30ATO-220AB30V600VROHS3 CompliantLead Free5 ns0.125Ohm87A
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---PG-TO220-3---Tube-packed---------------------------------------RoHS Compliant----
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18 WeeksThrough HoleThrough HoleTO-220-3 Full Pack3--55°C~150°C TJTubeCoolMOS™ P62008e3yesActive1 (Unlimited)-EAR99Tin (Sn)MOSFET (Metal Oxide)-NOT SPECIFIEDNOT SPECIFIED----34W Tc---20 nsN-Channel-99m Ω @ 14.5A, 10V4.5V @ 1.21mAHalogen Free3330pF @ 100V37.9A Tc70nC @ 10V10ns-10V±20V50 ns37.9A-30V600VROHS3 CompliantLead Free5 ns--
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