IPA60R199CPXKSA1

Infineon Technologies IPA60R199CPXKSA1

Part Number:
IPA60R199CPXKSA1
Manufacturer:
Infineon Technologies
Ventron No:
3070277-IPA60R199CPXKSA1
Description:
MOSFET N-CH 650V 16A TO220-3
ECAD Model:
Datasheet:
IPA60R199CPXKSA1

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Specifications
Infineon Technologies IPA60R199CPXKSA1 technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IPA60R199CPXKSA1.
  • Factory Lead Time
    16 Weeks
  • Mount
    Through Hole
  • Mounting Type
    Through Hole
  • Package / Case
    TO-220-3 Full Pack
  • Number of Pins
    3
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Tube
  • Series
    CoolMOS™
  • Published
    2007
  • JESD-609 Code
    e3
  • Pbfree Code
    yes
  • Part Status
    Not For New Designs
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    3
  • ECCN Code
    EAR99
  • Terminal Finish
    Tin (Sn)
  • Technology
    MOSFET (Metal Oxide)
  • Terminal Position
    SINGLE
  • Peak Reflow Temperature (Cel)
    NOT SPECIFIED
  • Time@Peak Reflow Temperature-Max (s)
    NOT SPECIFIED
  • Pin Count
    3
  • Qualification Status
    Not Qualified
  • Number of Elements
    1
  • Configuration
    SINGLE WITH BUILT-IN DIODE
  • Power Dissipation-Max
    34W Tc
  • Operating Mode
    ENHANCEMENT MODE
  • Power Dissipation
    34W
  • Case Connection
    ISOLATED
  • Turn On Delay Time
    10 ns
  • FET Type
    N-Channel
  • Transistor Application
    SWITCHING
  • Rds On (Max) @ Id, Vgs
    199m Ω @ 9.9A, 10V
  • Vgs(th) (Max) @ Id
    3.5V @ 1.1mA
  • Halogen Free
    Halogen Free
  • Input Capacitance (Ciss) (Max) @ Vds
    1520pF @ 100V
  • Current - Continuous Drain (Id) @ 25°C
    16A Tc
  • Gate Charge (Qg) (Max) @ Vgs
    43nC @ 10V
  • Rise Time
    5ns
  • Drain to Source Voltage (Vdss)
    650V
  • Drive Voltage (Max Rds On,Min Rds On)
    10V
  • Vgs (Max)
    ±20V
  • Turn-Off Delay Time
    50 ns
  • Continuous Drain Current (ID)
    16A
  • JEDEC-95 Code
    TO-220AB
  • Gate to Source Voltage (Vgs)
    20V
  • Max Dual Supply Voltage
    600V
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Lead Free
Description
IPA60R199CPXKSA1 Overview
CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 1520pF @ 100V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.As a result of its turn-off delay time, which is 50 ns, the device has taken time to charge its input capacitance before drain current conduction begins.Input capacitance charge delays drain current conduction until the time it takes to charge input capacitance reaches 10 ns.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 20VV.The maximum dual supply voltage can be supported by 600V.The transistor must receive a 650V drain to source voltage (Vdss) in order to function.In addition to reducing power consumption, this device uses drive voltage (10V).

IPA60R199CPXKSA1 Features
a continuous drain current (ID) of 16A
the turn-off delay time is 50 ns
a 650V drain to source voltage (Vdss)


IPA60R199CPXKSA1 Applications
There are a lot of Infineon Technologies
IPA60R199CPXKSA1 applications of single MOSFETs transistors.


DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
Lighting, Server, Telecom and UPS.
IPA60R199CPXKSA1 More Descriptions
Trans MOSFET N-CH 600V 16A 3-Pin(3 Tab) TO-220FP Tube
CoolMOS CP, Infineon's fifth series of CoolMOS, is designed for hard and soft switching topologies, CCM PFC as well as PWM for ATX, notebook adapter PDP and LCD TV. | Summary of Features: Lowest figure of merit R on x Q g; Ultra low gate charge; Extreme dv/dt rate; Ultra low R DS(on), ultra low gate charge, very fast switching; V th 3 V, g fs very high, internal R g very low; High current capability; Significant reduction of conduction and switching losses; High power density and efficiency for superior power conversion systems; Best-in-class price/performance ratio | Target Applications: Solar; Server; Telecom; Consumer; Adapter; PC power
MOSFET, N, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:16A; Drain Source Voltage Vds:650V; On Resistance Rds(on):199mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:3V; Power Dissipation Pd:34W; Operating Temperature Range:-55°C to 150°C; Transistor Case Style:TO-220; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Id Max:16A; Package / Case:TO-220; Power Dissipation Pd:34W; Termination Type:Through Hole; Transistor Type:Power MOSFET; Voltage Vds Typ:650V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V
Product Comparison
The three parts on the right have similar specifications to IPA60R199CPXKSA1.
  • Image
    Part Number
    Manufacturer
    Factory Lead Time
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Transistor Element Material
    Operating Temperature
    Packaging
    Series
    Published
    JESD-609 Code
    Pbfree Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    ECCN Code
    Terminal Finish
    Technology
    Terminal Position
    Peak Reflow Temperature (Cel)
    Time@Peak Reflow Temperature-Max (s)
    Pin Count
    Qualification Status
    Number of Elements
    Configuration
    Power Dissipation-Max
    Operating Mode
    Power Dissipation
    Case Connection
    Turn On Delay Time
    FET Type
    Transistor Application
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Halogen Free
    Input Capacitance (Ciss) (Max) @ Vds
    Current - Continuous Drain (Id) @ 25°C
    Gate Charge (Qg) (Max) @ Vgs
    Rise Time
    Drain to Source Voltage (Vdss)
    Drive Voltage (Max Rds On,Min Rds On)
    Vgs (Max)
    Turn-Off Delay Time
    Continuous Drain Current (ID)
    JEDEC-95 Code
    Gate to Source Voltage (Vgs)
    Max Dual Supply Voltage
    RoHS Status
    Lead Free
    Fall Time (Typ)
    Drain-source On Resistance-Max
    Pulsed Drain Current-Max (IDM)
    View Compare
  • IPA60R199CPXKSA1
    IPA60R199CPXKSA1
    16 Weeks
    Through Hole
    Through Hole
    TO-220-3 Full Pack
    3
    SILICON
    -55°C~150°C TJ
    Tube
    CoolMOS™
    2007
    e3
    yes
    Not For New Designs
    1 (Unlimited)
    3
    EAR99
    Tin (Sn)
    MOSFET (Metal Oxide)
    SINGLE
    NOT SPECIFIED
    NOT SPECIFIED
    3
    Not Qualified
    1
    SINGLE WITH BUILT-IN DIODE
    34W Tc
    ENHANCEMENT MODE
    34W
    ISOLATED
    10 ns
    N-Channel
    SWITCHING
    199m Ω @ 9.9A, 10V
    3.5V @ 1.1mA
    Halogen Free
    1520pF @ 100V
    16A Tc
    43nC @ 10V
    5ns
    650V
    10V
    ±20V
    50 ns
    16A
    TO-220AB
    20V
    600V
    ROHS3 Compliant
    Lead Free
    -
    -
    -
    -
  • IPA60R125P6XKSA1
    18 Weeks
    Through Hole
    Through Hole
    TO-220-3 Full Pack
    3
    SILICON
    -55°C~150°C TJ
    Tube
    CoolMOS™ P6
    2008
    e3
    yes
    Active
    1 (Unlimited)
    3
    EAR99
    Tin (Sn)
    MOSFET (Metal Oxide)
    SINGLE
    NOT SPECIFIED
    NOT SPECIFIED
    -
    -
    1
    SINGLE WITH BUILT-IN DIODE
    34W Tc
    ENHANCEMENT MODE
    -
    ISOLATED
    14 ns
    N-Channel
    SWITCHING
    125m Ω @ 11.6A, 10V
    4.5V @ 960μA
    Halogen Free
    2660pF @ 100V
    30A Tc
    56nC @ 10V
    9ns
    -
    10V
    ±20V
    44 ns
    30A
    TO-220AB
    30V
    600V
    ROHS3 Compliant
    Lead Free
    5 ns
    0.125Ohm
    87A
  • IPA60R280C6
    -
    -
    -
    PG-TO220-3
    -
    -
    -
    Tube-packed
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    RoHS Compliant
    -
    -
    -
    -
  • IPA60R099P6XKSA1
    18 Weeks
    Through Hole
    Through Hole
    TO-220-3 Full Pack
    3
    -
    -55°C~150°C TJ
    Tube
    CoolMOS™ P6
    2008
    e3
    yes
    Active
    1 (Unlimited)
    -
    EAR99
    Tin (Sn)
    MOSFET (Metal Oxide)
    -
    NOT SPECIFIED
    NOT SPECIFIED
    -
    -
    -
    -
    34W Tc
    -
    -
    -
    20 ns
    N-Channel
    -
    99m Ω @ 14.5A, 10V
    4.5V @ 1.21mA
    Halogen Free
    3330pF @ 100V
    37.9A Tc
    70nC @ 10V
    10ns
    -
    10V
    ±20V
    50 ns
    37.9A
    -
    30V
    600V
    ROHS3 Compliant
    Lead Free
    5 ns
    -
    -
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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