Infineon Technologies IPA60R099P6XKSA1
- Part Number:
- IPA60R099P6XKSA1
- Manufacturer:
- Infineon Technologies
- Ventron No:
- 3070419-IPA60R099P6XKSA1
- Description:
- MOSFET N-CH 600V TO220FP-3
- ECAD Model:
-
- Datasheet:
- IPA60R099P6XKSA1
Infineon Technologies IPA60R099P6XKSA1 technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IPA60R099P6XKSA1.
- Factory Lead Time18 Weeks
- MountThrough Hole
- Mounting TypeThrough Hole
- Package / CaseTO-220-3 Full Pack
- Number of Pins3
- Operating Temperature-55°C~150°C TJ
- PackagingTube
- SeriesCoolMOS™ P6
- Published2008
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- ECCN CodeEAR99
- Terminal FinishTin (Sn)
- TechnologyMOSFET (Metal Oxide)
- Peak Reflow Temperature (Cel)NOT SPECIFIED
- Time@Peak Reflow Temperature-Max (s)NOT SPECIFIED
- Power Dissipation-Max34W Tc
- Turn On Delay Time20 ns
- FET TypeN-Channel
- Rds On (Max) @ Id, Vgs99m Ω @ 14.5A, 10V
- Vgs(th) (Max) @ Id4.5V @ 1.21mA
- Halogen FreeHalogen Free
- Input Capacitance (Ciss) (Max) @ Vds3330pF @ 100V
- Current - Continuous Drain (Id) @ 25°C37.9A Tc
- Gate Charge (Qg) (Max) @ Vgs70nC @ 10V
- Rise Time10ns
- Drive Voltage (Max Rds On,Min Rds On)10V
- Vgs (Max)±20V
- Fall Time (Typ)5 ns
- Turn-Off Delay Time50 ns
- Continuous Drain Current (ID)37.9A
- Gate to Source Voltage (Vgs)30V
- Max Dual Supply Voltage600V
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
IPA60R099P6XKSA1 Overview
CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 3330pF @ 100V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.As a result of its turn-off delay time, which is 50 ns, the device has taken time to charge its input capacitance before drain current conduction begins.Input capacitance charge delays drain current conduction until the time it takes to charge input capacitance reaches 20 ns.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 30VV.The maximum dual supply voltage can be supported by 600V.In addition to reducing power consumption, this device uses drive voltage (10V).
IPA60R099P6XKSA1 Features
a continuous drain current (ID) of 37.9A
the turn-off delay time is 50 ns
IPA60R099P6XKSA1 Applications
There are a lot of Infineon Technologies
IPA60R099P6XKSA1 applications of single MOSFETs transistors.
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
Lighting, Server, Telecom and UPS.
CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 3330pF @ 100V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.As a result of its turn-off delay time, which is 50 ns, the device has taken time to charge its input capacitance before drain current conduction begins.Input capacitance charge delays drain current conduction until the time it takes to charge input capacitance reaches 20 ns.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 30VV.The maximum dual supply voltage can be supported by 600V.In addition to reducing power consumption, this device uses drive voltage (10V).
IPA60R099P6XKSA1 Features
a continuous drain current (ID) of 37.9A
the turn-off delay time is 50 ns
IPA60R099P6XKSA1 Applications
There are a lot of Infineon Technologies
IPA60R099P6XKSA1 applications of single MOSFETs transistors.
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
Lighting, Server, Telecom and UPS.
IPA60R099P6XKSA1 More Descriptions
Single N-Channel 600 V 99 mOhm 70 nC CoolMOS Power Mosfet - TO-220-3FP
Trans MOSFET N-CH 650V 37.9A 3-Pin TO-220 FP Tube - Rail/Tube
Mosfet, N-Ch, 600V, 37.9A, To-220Fp; Transistor Polarity:N Channel; Continuous Drain Current Id:37.9A; Drain Source Voltage Vds:600V; On Resistance Rds(On):0.089Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power Rohs Compliant: Yes |Infineon IPA60R099P6XKSA1
Power Field-Effect Transistor, 37.9A I(D), 600V, 0.099ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
Infineons CoolMOS™ P6 superjunction MOSFET family is designed to enable higher system efficiency whilst being easy to design in, PG-TO220-3, RoHSInfineon SCT
Infineons CoolMOS P6 product family is designed to enable higher system efficiency whilst being easy to design in. CoolMOS P6 closes the gap between technologies which focus on delivering ultimate performance and those which concentrate more on ease-of-use. | Summary of Features: Reduced gate charge (Q g); Higher V th; Good body diode ruggedness; Optimized integrated R g; Improved dv/dt from 50V/ns; CoolMOS quality with over 12 years manufacturing experience in superjunction technology | Benefits: Improved effciency especially in light load condition; Better efficiency in soft switching applications due to earlier turn-off; Suitable for hard- & soft-switching topologies; Optimized balance of efficiency and ease of use and good controllability of switching behavior; High robustness and better efficiency; Outstanding quality & reliability | Target Applications: PFC stages for server, telecom rectifier, PC silverbox, gaming consoles; PWM stages (TTF, LLC) for server, telecom rectifier, PC silverbox, gaming consoles
Trans MOSFET N-CH 650V 37.9A 3-Pin TO-220 FP Tube - Rail/Tube
Mosfet, N-Ch, 600V, 37.9A, To-220Fp; Transistor Polarity:N Channel; Continuous Drain Current Id:37.9A; Drain Source Voltage Vds:600V; On Resistance Rds(On):0.089Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power Rohs Compliant: Yes |Infineon IPA60R099P6XKSA1
Power Field-Effect Transistor, 37.9A I(D), 600V, 0.099ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
Infineons CoolMOS™ P6 superjunction MOSFET family is designed to enable higher system efficiency whilst being easy to design in, PG-TO220-3, RoHSInfineon SCT
Infineons CoolMOS P6 product family is designed to enable higher system efficiency whilst being easy to design in. CoolMOS P6 closes the gap between technologies which focus on delivering ultimate performance and those which concentrate more on ease-of-use. | Summary of Features: Reduced gate charge (Q g); Higher V th; Good body diode ruggedness; Optimized integrated R g; Improved dv/dt from 50V/ns; CoolMOS quality with over 12 years manufacturing experience in superjunction technology | Benefits: Improved effciency especially in light load condition; Better efficiency in soft switching applications due to earlier turn-off; Suitable for hard- & soft-switching topologies; Optimized balance of efficiency and ease of use and good controllability of switching behavior; High robustness and better efficiency; Outstanding quality & reliability | Target Applications: PFC stages for server, telecom rectifier, PC silverbox, gaming consoles; PWM stages (TTF, LLC) for server, telecom rectifier, PC silverbox, gaming consoles
The three parts on the right have similar specifications to IPA60R099P6XKSA1.
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ImagePart NumberManufacturerFactory Lead TimeMountMounting TypePackage / CaseNumber of PinsOperating TemperaturePackagingSeriesPublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)ECCN CodeTerminal FinishTechnologyPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)Power Dissipation-MaxTurn On Delay TimeFET TypeRds On (Max) @ Id, VgsVgs(th) (Max) @ IdHalogen FreeInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsRise TimeDrive Voltage (Max Rds On,Min Rds On)Vgs (Max)Fall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)Gate to Source Voltage (Vgs)Max Dual Supply VoltageRoHS StatusLead FreeSurface MountTransistor Element MaterialNumber of TerminationsTerminal PositionReach Compliance CodePin CountJESD-30 CodeQualification StatusNumber of ElementsConfigurationOperating ModeCase ConnectionTransistor ApplicationDrain to Source Voltage (Vdss)JEDEC-95 CodeDrain Current-Max (Abs) (ID)Drain-source On Resistance-MaxPulsed Drain Current-Max (IDM)DS Breakdown Voltage-MinAvalanche Energy Rating (Eas)View Compare
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IPA60R099P6XKSA118 WeeksThrough HoleThrough HoleTO-220-3 Full Pack3-55°C~150°C TJTubeCoolMOS™ P62008e3yesActive1 (Unlimited)EAR99Tin (Sn)MOSFET (Metal Oxide)NOT SPECIFIEDNOT SPECIFIED34W Tc20 nsN-Channel99m Ω @ 14.5A, 10V4.5V @ 1.21mAHalogen Free3330pF @ 100V37.9A Tc70nC @ 10V10ns10V±20V5 ns50 ns37.9A30V600VROHS3 CompliantLead Free--------------------- -
--Through HoleTO-220-3 Full Pack--55°C~150°C TJTubeCoolMOS™2008e3yesObsolete1 (Unlimited)EAR99Tin (Sn)MOSFET (Metal Oxide)NOT SPECIFIEDNOT SPECIFIED28W Tc-N-Channel600m Ω @ 3.3A, 10V3.5V @ 220μA-550pF @ 100V6.1A Tc27nC @ 10V-10V±20V-----RoHS Compliant-NOSILICON3SINGLEcompliant3R-PSFM-T3Not Qualified1SINGLE WITH BUILT-IN DIODEENHANCEMENT MODEISOLATEDSWITCHING600VTO-220AB6.1A0.6Ohm15A600V144 mJ
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---PG-TO220-3--Tube-packed----------------------------RoHS Compliant---------------------
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12 Weeks-Through HoleTO-220-3 Full Pack--55°C~150°C TJTubeCoolMOS™2008e3yesNot For New Designs1 (Unlimited)-Tin (Sn)MOSFET (Metal Oxide)NOT SPECIFIEDNOT SPECIFIED33W Tc-N-Channel299m Ω @ 6.6A, 10V3.5V @ 440μA-1100pF @ 100V11A Tc29nC @ 10V-10V±20V-----ROHS3 Compliant-NOSILICON3SINGLE-3R-PSFM-T3Not Qualified1SINGLE WITH BUILT-IN DIODEENHANCEMENT MODEISOLATEDSWITCHING600VTO-220AB11A0.299Ohm34A600V290 mJ
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