Infineon Technologies IPA60R299CPXKSA1
- Part Number:
- IPA60R299CPXKSA1
- Manufacturer:
- Infineon Technologies
- Ventron No:
- 2852019-IPA60R299CPXKSA1
- Description:
- MOSFET N-CH 600V 11A TO220-3
- ECAD Model:
-
- Datasheet:
- IPA60R299CPXKSA1
Infineon Technologies IPA60R299CPXKSA1 technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IPA60R299CPXKSA1.
- Factory Lead Time12 Weeks
- Mounting TypeThrough Hole
- Package / CaseTO-220-3 Full Pack
- Surface MountNO
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTube
- SeriesCoolMOS™
- Published2008
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusNot For New Designs
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- Terminal FinishTin (Sn)
- TechnologyMOSFET (Metal Oxide)
- Terminal PositionSINGLE
- Peak Reflow Temperature (Cel)NOT SPECIFIED
- Time@Peak Reflow Temperature-Max (s)NOT SPECIFIED
- Pin Count3
- JESD-30 CodeR-PSFM-T3
- Qualification StatusNot Qualified
- Number of Elements1
- ConfigurationSINGLE WITH BUILT-IN DIODE
- Power Dissipation-Max33W Tc
- Operating ModeENHANCEMENT MODE
- Case ConnectionISOLATED
- FET TypeN-Channel
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs299m Ω @ 6.6A, 10V
- Vgs(th) (Max) @ Id3.5V @ 440μA
- Input Capacitance (Ciss) (Max) @ Vds1100pF @ 100V
- Current - Continuous Drain (Id) @ 25°C11A Tc
- Gate Charge (Qg) (Max) @ Vgs29nC @ 10V
- Drain to Source Voltage (Vdss)600V
- Drive Voltage (Max Rds On,Min Rds On)10V
- Vgs (Max)±20V
- JEDEC-95 CodeTO-220AB
- Drain Current-Max (Abs) (ID)11A
- Drain-source On Resistance-Max0.299Ohm
- Pulsed Drain Current-Max (IDM)34A
- DS Breakdown Voltage-Min600V
- Avalanche Energy Rating (Eas)290 mJ
- RoHS StatusROHS3 Compliant
IPA60R299CPXKSA1 Overview
This type of breakdown is known as "avalanche breakdown", and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 290 mJ.The maximum input capacitance of this device is 1100pF @ 100V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.As shown in the table below, the drain current of this device is 11A.There is no pulsed drain current maximum for this device based on its rated peak drain current 34A.To maintain normal operation, it's recommended that the DS breakdown voltage be kept above 600V.The drain-to-source voltage (Vdss) of this transistor needs to be at 600V in order to operate.Using drive voltage (10V), this device helps reduce its power consumption.
IPA60R299CPXKSA1 Features
the avalanche energy rating (Eas) is 290 mJ
based on its rated peak drain current 34A.
a 600V drain to source voltage (Vdss)
IPA60R299CPXKSA1 Applications
There are a lot of Infineon Technologies
IPA60R299CPXKSA1 applications of single MOSFETs transistors.
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
This type of breakdown is known as "avalanche breakdown", and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 290 mJ.The maximum input capacitance of this device is 1100pF @ 100V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.As shown in the table below, the drain current of this device is 11A.There is no pulsed drain current maximum for this device based on its rated peak drain current 34A.To maintain normal operation, it's recommended that the DS breakdown voltage be kept above 600V.The drain-to-source voltage (Vdss) of this transistor needs to be at 600V in order to operate.Using drive voltage (10V), this device helps reduce its power consumption.
IPA60R299CPXKSA1 Features
the avalanche energy rating (Eas) is 290 mJ
based on its rated peak drain current 34A.
a 600V drain to source voltage (Vdss)
IPA60R299CPXKSA1 Applications
There are a lot of Infineon Technologies
IPA60R299CPXKSA1 applications of single MOSFETs transistors.
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
IPA60R299CPXKSA1 More Descriptions
Single N-Channel 600 V 299 mOhm 22 nC CoolMOS Power Mosfet - TO-220-3-FP
Trans MOSFET N-CH 600V 11A 3-Pin(3 Tab) TO-220FP Tube
Power Field-Effect Transistor, 11A I(D), 600V, 0.299ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN
CoolMOS CP, Infineon's fifth series of CoolMOS, is designed for hard and soft switching topologies, CCM PFC as well as PWM for ATX, notebook adapter PDP and LCD TV. | Summary of Features: Lowest figure of merit R on x Q g; Ultra low gate charge; Extreme dv/dt rate; Ultra low R DS(on), ultra low gate charge, very fast switching; V th 3 V, g fs very high, internal R g very low; High current capability; Significant reduction of conduction and switching losses; High power density and efficiency for superior power conversion systems; Best-in-class price/performance ratio | Target Applications: Solar; Server; Telecom; Consumer; Adapter; PC power
MOSFET, N, TO-220; Transistor Type:Power MOSFET; Transistor Polarity:N; Voltage, Vds Typ:650V; Current, Id Cont:11A; On State Resistance:0.299ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:3V; Case Style:TO-220; ;RoHS Compliant: Yes
MOSFET, N, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:11A; Drain Source Voltage Vds:650V; On Resistance Rds(on):299mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:3V; Power Dissipation Pd:33W; Operating Temperature Range:-55°C to 150°C; Transistor Case Style:TO-220; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Id Max:11A; Package / Case:TO-220; Power Dissipation Pd:33W; Termination Type:Through Hole; Transistor Type:Power MOSFET; Voltage Vds Typ:650V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V
Trans MOSFET N-CH 600V 11A 3-Pin(3 Tab) TO-220FP Tube
Power Field-Effect Transistor, 11A I(D), 600V, 0.299ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN
CoolMOS CP, Infineon's fifth series of CoolMOS, is designed for hard and soft switching topologies, CCM PFC as well as PWM for ATX, notebook adapter PDP and LCD TV. | Summary of Features: Lowest figure of merit R on x Q g; Ultra low gate charge; Extreme dv/dt rate; Ultra low R DS(on), ultra low gate charge, very fast switching; V th 3 V, g fs very high, internal R g very low; High current capability; Significant reduction of conduction and switching losses; High power density and efficiency for superior power conversion systems; Best-in-class price/performance ratio | Target Applications: Solar; Server; Telecom; Consumer; Adapter; PC power
MOSFET, N, TO-220; Transistor Type:Power MOSFET; Transistor Polarity:N; Voltage, Vds Typ:650V; Current, Id Cont:11A; On State Resistance:0.299ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:3V; Case Style:TO-220; ;RoHS Compliant: Yes
MOSFET, N, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:11A; Drain Source Voltage Vds:650V; On Resistance Rds(on):299mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:3V; Power Dissipation Pd:33W; Operating Temperature Range:-55°C to 150°C; Transistor Case Style:TO-220; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Id Max:11A; Package / Case:TO-220; Power Dissipation Pd:33W; Termination Type:Through Hole; Transistor Type:Power MOSFET; Voltage Vds Typ:650V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V
The three parts on the right have similar specifications to IPA60R299CPXKSA1.
-
ImagePart NumberManufacturerFactory Lead TimeMounting TypePackage / CaseSurface MountTransistor Element MaterialOperating TemperaturePackagingSeriesPublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsTerminal FinishTechnologyTerminal PositionPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)Pin CountJESD-30 CodeQualification StatusNumber of ElementsConfigurationPower Dissipation-MaxOperating ModeCase ConnectionFET TypeTransistor ApplicationRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsDrain to Source Voltage (Vdss)Drive Voltage (Max Rds On,Min Rds On)Vgs (Max)JEDEC-95 CodeDrain Current-Max (Abs) (ID)Drain-source On Resistance-MaxPulsed Drain Current-Max (IDM)DS Breakdown Voltage-MinAvalanche Energy Rating (Eas)RoHS StatusMountNumber of PinsECCN CodeTurn On Delay TimeHalogen FreeRise TimeFall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)Gate to Source Voltage (Vgs)Max Dual Supply VoltageLead FreeView Compare
-
IPA60R299CPXKSA112 WeeksThrough HoleTO-220-3 Full PackNOSILICON-55°C~150°C TJTubeCoolMOS™2008e3yesNot For New Designs1 (Unlimited)3Tin (Sn)MOSFET (Metal Oxide)SINGLENOT SPECIFIEDNOT SPECIFIED3R-PSFM-T3Not Qualified1SINGLE WITH BUILT-IN DIODE33W TcENHANCEMENT MODEISOLATEDN-ChannelSWITCHING299m Ω @ 6.6A, 10V3.5V @ 440μA1100pF @ 100V11A Tc29nC @ 10V600V10V±20VTO-220AB11A0.299Ohm34A600V290 mJROHS3 Compliant------------- -
18 WeeksThrough HoleTO-220-3 Full Pack-SILICON-55°C~150°C TJTubeCoolMOS™ P62008e3yesActive1 (Unlimited)3Tin (Sn)MOSFET (Metal Oxide)SINGLENOT SPECIFIEDNOT SPECIFIED---1SINGLE WITH BUILT-IN DIODE34W TcENHANCEMENT MODEISOLATEDN-ChannelSWITCHING125m Ω @ 11.6A, 10V4.5V @ 960μA2660pF @ 100V30A Tc56nC @ 10V-10V±20VTO-220AB-0.125Ohm87A--ROHS3 CompliantThrough Hole3EAR9914 nsHalogen Free9ns5 ns44 ns30A30V600VLead Free
-
--PG-TO220-3---Tube-packed------------------------------------RoHS Compliant------------
-
18 WeeksThrough HoleTO-220-3 Full Pack---55°C~150°C TJTubeCoolMOS™ P62008e3yesActive1 (Unlimited)-Tin (Sn)MOSFET (Metal Oxide)-NOT SPECIFIEDNOT SPECIFIED-----34W Tc--N-Channel-99m Ω @ 14.5A, 10V4.5V @ 1.21mA3330pF @ 100V37.9A Tc70nC @ 10V-10V±20V------ROHS3 CompliantThrough Hole3EAR9920 nsHalogen Free10ns5 ns50 ns37.9A30V600VLead Free
Popular Search Part Number
Related Keywords
Search Tags
Latest News
-
04 January 2024
TPS5430DDAR Converter Replacements, Characteristics, Applications and Development
Ⅰ. What is TPS5430DDAR?Ⅱ. Characteristics of TPS5430DDARⅢ. Specifications of TPS5430DDARⅣ. Market trend of TPS5430DDARⅤ. Pin configuration and functions of TPS5430DDARⅥ. Typical applications of TPS5430DDARⅦ. Development of TPS5430DDARTPS5430DDAR is... -
05 January 2024
N76E003AT20 Microcontroller Manufacturer, Specifications, Features and Package
Ⅰ. Introduction to N76E003AT20Ⅱ. N76E003AT20 manufacturerⅢ. Specifications of N76E003AT20Ⅳ. Features of N76E003AT20Ⅴ. Peripheral equipment and functions of N76E003AT20Ⅵ. Programming and burning of N76E003AT20Ⅶ. Package of N76E003AT20Ⅷ. What are... -
05 January 2024
TXS0108ERGYR Working Principle, Functions, Applications and Other Details
Ⅰ. What is a level translator?Ⅱ. Overview of TXS0108ERGYRⅢ. Working principle and functional block diagram of TXS0108ERGYRⅣ. Technical parameters of TXS0108ERGYRⅤ. Absolute maximum ratings of TXS0108ERGYRⅥ. Functions of... -
08 January 2024
MC34063ADR2G Switching Regulator Working Principle, Specifications and Applications
Ⅰ. MC34063ADR2G descriptionⅡ. Technical parameters of MC34063ADR2GⅢ. How does MC34063ADR2G work?Ⅳ. MC34063ADR2G symbol, footprint and pin configurationⅤ. What are the advantages and disadvantages of MC34063ADR2G?Ⅵ. What are the...
Help you to save your cost and time.
Reliable package for your goods.
Fast Reliable Delivery to save time.
Quality premium after-sale service.