Fairchild/ON Semiconductor HGTG30N60B3D
- Part Number:
- HGTG30N60B3D
- Manufacturer:
- Fairchild/ON Semiconductor
- Ventron No:
- 2494565-HGTG30N60B3D
- Description:
- IGBT 600V 60A 208W TO247
- ECAD Model:
-
- Datasheet:
- HGTG30N60B3D
Fairchild/ON Semiconductor HGTG30N60B3D technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor HGTG30N60B3D.
- Lifecycle StatusACTIVE, NOT REC (Last Updated: 2 days ago)
- MountThrough Hole
- Mounting TypeThrough Hole
- Package / CaseTO-247-3
- Number of Pins3
- Weight6.39g
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTube
- Published2011
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusNot For New Designs
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- Terminal FinishTin (Sn)
- Additional FeatureLOW CONDUCTION LOSS
- HTS Code8541.29.00.95
- Voltage - Rated DC600V
- Max Power Dissipation208W
- Current Rating60A
- Base Part NumberHGTG30N60
- Number of Elements1
- Element ConfigurationSingle
- Power Dissipation208W
- Input TypeStandard
- Turn On Delay Time36 ns
- Transistor ApplicationPOWER CONTROL
- Rise Time25ns
- Polarity/Channel TypeN-CHANNEL
- Turn-Off Delay Time137 ns
- Collector Emitter Voltage (VCEO)600V
- Max Collector Current60A
- Reverse Recovery Time55 ns
- Collector Emitter Breakdown Voltage600V
- Collector Emitter Saturation Voltage1.45V
- Turn On Time56 ns
- Test Condition480V, 30A, 3 Ω, 15V
- Vce(on) (Max) @ Vge, Ic1.9V @ 15V, 30A
- Turn Off Time-Nom (toff)365 ns
- Gate Charge170nC
- Current - Collector Pulsed (Icm)220A
- Td (on/off) @ 25°C36ns/137ns
- Switching Energy550μJ (on), 680μJ (off)
- REACH SVHCNo SVHC
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
HGTG30N60B3D Description
The HGTG30N60B3D is a MOS gated high voltage switching device that combines MOSFET and bipolar transistor capabilities. This device has a MOSFET's high input impedance and a bipolar transistor's low on-state conduction loss. Between 25oC and 150oC, the significantly smaller on-state voltage loss fluctuates relatively modestly. The TA49170 development type IGBT was used. The TA49053 development type diode is utilized in anti-parallel with the IGBT.
HGTG30N60B3D Features
? TC = 25oC, 60A, 600V
? SOA Switching Capability of 600V
? At TJ = 150oC, the typical fall time is 90ns.
? Short-circuit protection
? Low Loss of Conduction
? Anti-Parallel Hyper-Fast Diode
HGTG30N60B3D Applications
?Scale of measurement
The HGTG30N60B3D is a MOS gated high voltage switching device that combines MOSFET and bipolar transistor capabilities. This device has a MOSFET's high input impedance and a bipolar transistor's low on-state conduction loss. Between 25oC and 150oC, the significantly smaller on-state voltage loss fluctuates relatively modestly. The TA49170 development type IGBT was used. The TA49053 development type diode is utilized in anti-parallel with the IGBT.
HGTG30N60B3D Features
? TC = 25oC, 60A, 600V
? SOA Switching Capability of 600V
? At TJ = 150oC, the typical fall time is 90ns.
? Short-circuit protection
? Low Loss of Conduction
? Anti-Parallel Hyper-Fast Diode
HGTG30N60B3D Applications
?Scale of measurement
HGTG30N60B3D More Descriptions
Trans IGBT Chip N=-CH 600V 60A 208000mW 3-Pin(3 Tab) TO-247 Rail
IGBT,N CH,600V,30A,TO-247.; DC Collector Current: 60A; Collector Emitter Saturation Voltage Vce(on): 1.9V; Power Dissipation Pd: 208W; Collector Emitter Voltage V(br)ceo: 600V; Transistor Case Style: TO-247; No. of Pins: 3Pins
The HGTG30N60B3D is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25°C and 150°C. The IGBT used is the development type TA49170. The diode used in anti-parallel with the IGBT is the development type TA49053.The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as: AC and DC motor controls, power supplies and drivers for solenoids, relays and contactors.Formerly Developmental Type TA49172.
IGBT,N CH,600V,30A,TO-247.; DC Collector Current: 60A; Collector Emitter Saturation Voltage Vce(on): 1.9V; Power Dissipation Pd: 208W; Collector Emitter Voltage V(br)ceo: 600V; Transistor Case Style: TO-247; No. of Pins: 3Pins
The HGTG30N60B3D is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25°C and 150°C. The IGBT used is the development type TA49170. The diode used in anti-parallel with the IGBT is the development type TA49053.The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as: AC and DC motor controls, power supplies and drivers for solenoids, relays and contactors.Formerly Developmental Type TA49172.
The three parts on the right have similar specifications to HGTG30N60B3D.
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ImagePart NumberManufacturerLifecycle StatusMountMounting TypePackage / CaseNumber of PinsWeightTransistor Element MaterialOperating TemperaturePackagingPublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeTerminal FinishAdditional FeatureHTS CodeVoltage - Rated DCMax Power DissipationCurrent RatingBase Part NumberNumber of ElementsElement ConfigurationPower DissipationInput TypeTurn On Delay TimeTransistor ApplicationRise TimePolarity/Channel TypeTurn-Off Delay TimeCollector Emitter Voltage (VCEO)Max Collector CurrentReverse Recovery TimeCollector Emitter Breakdown VoltageCollector Emitter Saturation VoltageTurn On TimeTest ConditionVce(on) (Max) @ Vge, IcTurn Off Time-Nom (toff)Gate ChargeCurrent - Collector Pulsed (Icm)Td (on/off) @ 25°CSwitching EnergyREACH SVHCRadiation HardeningRoHS StatusLead FreeFactory Lead TimeContact PlatingSubcategoryPolarityCase ConnectionMax Breakdown VoltageContinuous Collector CurrentGate-Emitter Voltage-MaxGate-Emitter Thr Voltage-MaxFall Time-Max (tf)HeightLengthWidthVoltage - Collector Emitter Breakdown (Max)IGBT TypeReach Compliance CodePower - MaxCurrent - Collector (Ic) (Max)View Compare
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HGTG30N60B3DACTIVE, NOT REC (Last Updated: 2 days ago)Through HoleThrough HoleTO-247-336.39gSILICON-55°C~150°C TJTube2011e3yesNot For New Designs1 (Unlimited)3EAR99Tin (Sn)LOW CONDUCTION LOSS8541.29.00.95600V208W60AHGTG30N601Single208WStandard36 nsPOWER CONTROL25nsN-CHANNEL137 ns600V60A55 ns600V1.45V56 ns480V, 30A, 3 Ω, 15V1.9V @ 15V, 30A365 ns170nC220A36ns/137ns550μJ (on), 680μJ (off)No SVHCNoROHS3 CompliantLead Free------------------- -
ACTIVE (Last Updated: 2 days ago)Through HoleThrough HoleTO-247-336.39gSILICON-55°C~150°C TJTube2013e3yesActive1 (Unlimited)3EAR99-LOW CONDUCTION LOSS8541.29.00.95600V208W60AHGTG30N601Single208WStandard-POWER CONTROL---600V60A-600V1.45V56 ns480V, 30A, 3 Ω, 15V1.9V @ 15V, 30A365 ns170nC220A36ns/137ns500μJ (on), 680μJ (off)No SVHCNoROHS3 CompliantLead Free4 WeeksTinInsulated Gate BIP TransistorsNPNCOLLECTOR600V60A20V6V150ns20.82mm15.87mm4.82mm-----
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ACTIVE, NOT REC (Last Updated: 2 days ago)Through HoleThrough HoleTO-247-336.39gSILICON-55°C~150°C TJTube-e3yesNot For New Designs1 (Unlimited)3EAR99Tin (Sn)LOW CONDUCTION LOSS, AVALANCHE RATED8541.29.00.951.2kV500W72A-1Single500WStandard24 nsPOWER CONTROL-N-CHANNEL240 ns1.2kV72A-1.2kV2.45V42 ns960V, 27A, 3 Ω, 15V2.7V @ 15V, 27A360 ns270nC216A24ns/195ns2.2mJ (on), 2.3mJ (off)No SVHCNoROHS3 CompliantLead Free44 Weeks---COLLECTOR-72A---20.82mm15.87mm4.82mm1200VNPT---
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--Through HoleTO-247-3----55°C~150°C TJTube---Obsolete1 (Unlimited)------------Standard-----------960V, 11A, 10 Ω, 15V2.4V @ 15V, 11A-100nC80A23ns/180ns400μJ (on), 1.3mJ (off)-----------------1200VNPTcompliant298W43A
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