Fairchild/ON Semiconductor HGTG30N60A4

Name: HGTG30N60A4
Brand: Fairchild/ON Semiconductor
SKU: 3587282-HGTG30N60A4
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: HGTG30N60A4

Manufacturer:: Fairchild/ON Semiconductor

Ventron No:: 3587282-HGTG30N60A4

Description:: IGBT 600V 75A 463W TO247

ECAD Model:

Datasheet:: HGTG30N60A4

Specifications

Fairchild/ON Semiconductor HGTG30N60A4 technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor HGTG30N60A4.

Lifecycle Status
ACTIVE (Last Updated: 2 days ago)
Factory Lead Time
4 Weeks
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-247-3
Number of Pins
3
Weight
6.39g
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tube
Published
2011
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
Tin (Sn)
Additional Feature
LOW CONDUCTION LOSS
HTS Code
8541.29.00.95
Subcategory
Insulated Gate BIP Transistors
Voltage - Rated DC
600V
Max Power Dissipation
463W
Current Rating
75A
Base Part Number
HGTG30N60
Number of Elements
1
Element Configuration
Single
Power Dissipation
463W
Case Connection
COLLECTOR
Input Type
Standard
Turn On Delay Time
25 ns
Transistor Application
POWER CONTROL
Rise Time
12ns
Polarity/Channel Type
N-CHANNEL
Turn-Off Delay Time
150 ns
Collector Emitter Voltage (VCEO)
600V
Max Collector Current
75A
Collector Emitter Breakdown Voltage
600V
Collector Emitter Saturation Voltage
1.8V
Turn On Time
35 ns
Test Condition
390V, 30A, 3 Ω, 15V
Vce(on) (Max) @ Vge, Ic
2.6V @ 15V, 30A
Continuous Collector Current
75A
Turn Off Time-Nom (toff)
238 ns
Gate Charge
225nC
Current - Collector Pulsed (Icm)
240A
Td (on/off) @ 25°C
25ns/150ns
Switching Energy
280μJ (on), 240μJ (off)
Gate-Emitter Voltage-Max
20V
Gate-Emitter Thr Voltage-Max
7V
Fall Time-Max (tf)
70ns
Height
20.82mm
Length
15.87mm
Width
4.82mm
REACH SVHC
No SVHC
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free

Description

HGTG30N60A4 Description
The HGTG30N60A4 is a MOS gated high voltage switching device that combines MOSFET and bipolar transistor capabilities. This device has a MOSFET's high input impedance and a bipolar transistor's low on-state conduction loss. Between 25oC and 150oC, the significantly smaller on-state voltage loss fluctuates relatively modestly. This IGBT is suited for a variety of high-voltage switching applications that operate at high frequencies and require minimal conduction losses. This gadget was created with high-frequency switch-mode power supplies in mind.

HGTG30N60A4 Features
Low Conduction Loss
>100kHz Operation at 390V, 30A
200kHz Operation at 390V, 18A
600V Switching SOA Capability
Temperature Compensating SABER? Model
Typical Fall Time. . . . . . . . . . . . . . . . . 60ns at TJ = 125oC

HGTG30N60A4 Applications
UPS
Welder

HGTG30N60A4 More Descriptions

Transistor IGBT Chip Negative Channel 600 Volt 75A 3-Pin(3 Tab) TO-247 Rail
The HGTG30N60A4 combines the best features of high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. This IGBT is ideal for many high voltage switching applications operating at high frequencies where low conduction losses are essential. This device has been optimized for fast switching applications, such as UPS and welder.
IGBT, N, TO-247; Transistor Type:IGBT; DC Collector Current:75A; Collector Emitter Voltage Vces:2.6V; Power Dissipation Pd:463W; Collector Emitter Voltage V(br)ceo:600V; Transistor Case Style:TO-247; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Alternate Case Style:SOT-249; Current Ic Continuous a Max:75A; Current Temperature:25°C; Device Marking:HGTG30N60A4; Fall Time tf:38ns; Full Power Rating Temperature:25°C; No. of Transistors:1; Package / Case:TO-247; Pin Format:GCE; Power Dissipation Max:463W; Power Dissipation Pd:463W; Power Dissipation Pd:463W; Power Dissipation Ptot Max:463W; Pulsed Current Icm:240A; Rise Time:12ns; Termination Type:Through Hole; Transistor Polarity:N Channel; Voltage Vces:600V

Product Comparison

The three parts on the right have similar specifications to HGTG30N60A4.

Image

Part Number

Manufacturer

Lifecycle Status

Factory Lead Time

Mount

Mounting Type

Package / Case

Number of Pins

Weight

Transistor Element Material

Operating Temperature

Packaging

Published

JESD-609 Code

Pbfree Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

ECCN Code

Terminal Finish

Additional Feature

HTS Code

Subcategory

Voltage - Rated DC

Max Power Dissipation

Current Rating

Base Part Number

Number of Elements

Element Configuration

Power Dissipation

Case Connection

Input Type

Turn On Delay Time

Transistor Application

Rise Time

Polarity/Channel Type

Turn-Off Delay Time

Collector Emitter Voltage (VCEO)

Max Collector Current

Collector Emitter Breakdown Voltage

Collector Emitter Saturation Voltage

Turn On Time

Test Condition

Vce(on) (Max) @ Vge, Ic

Continuous Collector Current

Turn Off Time-Nom (toff)

Gate Charge

Current - Collector Pulsed (Icm)

Td (on/off) @ 25°C

Switching Energy

Gate-Emitter Voltage-Max

Gate-Emitter Thr Voltage-Max

Fall Time-Max (tf)

Height

Length

Width

REACH SVHC

Radiation Hardening

RoHS Status

Lead Free

Polarity

Reverse Recovery Time

Contact Plating

Max Breakdown Voltage

Surface Mount

Terminal Position

Peak Reflow Temperature (Cel)

Reach Compliance Code

Time@Peak Reflow Temperature-Max (s)

Pin Count

JESD-30 Code

Qualification Status

Configuration

Power - Max

Voltage - Collector Emitter Breakdown (Max)

Current - Collector (Ic) (Max)

View Compare
HGTG30N60A4

Fairchild/ON Semiconductor

ACTIVE (Last Updated: 2 days ago)

4 Weeks

Through Hole

Through Hole

TO-247-3

3

6.39g

SILICON

-55°C~150°C TJ

Tube

2011

e3

yes

Active

1 (Unlimited)

3

EAR99

Tin (Sn)

LOW CONDUCTION LOSS

8541.29.00.95

Insulated Gate BIP Transistors

600V

463W

75A

HGTG30N60

1

Single

463W

COLLECTOR

Standard

25 ns

POWER CONTROL

12ns

N-CHANNEL

150 ns

600V

75A

600V

1.8V

35 ns

390V, 30A, 3 Ω, 15V

2.6V @ 15V, 30A

75A

238 ns

225nC

240A

25ns/150ns

280μJ (on), 240μJ (off)

20V

7V

70ns

20.82mm

15.87mm

4.82mm

No SVHC

No

ROHS3 Compliant

Lead Free

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-
HGTG30N60C3D

Fairchild/ON Semiconductor

ACTIVE, NOT REC (Last Updated: 2 days ago)

7 Weeks

Through Hole

Through Hole

TO-247-3

3

6.39g

SILICON

-40°C~150°C TJ

Tube

2011

e3

yes

Not For New Designs

1 (Unlimited)

3

EAR99

Tin (Sn)

LOW CONDUCTION LOSS

8541.29.00.95

-

600V

208W

30A

HGTG30N60

1

Single

208W

-

Standard

40 ns

MOTOR CONTROL

45ns

-

320 ns

600V

63A

600V

1.5V

85 ns

-

1.8V @ 15V, 30A

-

550 ns

162nC

252A

-

1.05mJ (on), 2.5mJ (off)

-

-

-

20.82mm

15.87mm

4.82mm

No SVHC

No

ROHS3 Compliant

Lead Free

NPN

60ns

-

-

-

-

-

-

-

-

-

-

-

-

-

-

HGTG30N60A4 vs HGTG30N60C3D
HGTG30N60B3

Fairchild/ON Semiconductor

ACTIVE (Last Updated: 2 days ago)

4 Weeks

Through Hole

Through Hole

TO-247-3

3

6.39g

SILICON

-55°C~150°C TJ

Tube

2013

e3

yes

Active

1 (Unlimited)

3

EAR99

-

LOW CONDUCTION LOSS

8541.29.00.95

Insulated Gate BIP Transistors

600V

208W

60A

HGTG30N60

1

Single

208W

COLLECTOR

Standard

-

POWER CONTROL

-

-

-

600V

60A

600V

1.45V

56 ns

480V, 30A, 3 Ω, 15V

1.9V @ 15V, 30A

60A

365 ns

170nC

220A

36ns/137ns

500μJ (on), 680μJ (off)

20V

6V

150ns

20.82mm

15.87mm

4.82mm

No SVHC

No

ROHS3 Compliant

Lead Free

NPN

-

Tin

600V

-

-

-

-

-

-

-

-

-

-

-

-

HGTG30N60A4 vs HGTG30N60B3
HGTG7N60A4D

Fairchild/ON Semiconductor

-

-

-

Through Hole

TO-247-3

-

-

SILICON

-55°C~150°C TJ

Tube

-

e3

yes

Obsolete

3 (168 Hours)

3

-

MATTE TIN

LOW CONDUCTION LOSS

-

-

-

-

-

-

1

-

-

COLLECTOR

Standard

-

POWER CONTROL

-

N-CHANNEL

-

-

-

-

-

17 ns

390V, 7A, 25 Ω, 15V

2.7V @ 15V, 7A

-

205 ns

37nC

56A

11ns/100ns

55μJ (on), 60μJ (off)

-

-

-

-

-

-

-

-

ROHS3 Compliant

-

-

34ns

-

-

NO

SINGLE

NOT APPLICABLE

unknown

NOT APPLICABLE

3

R-PSFM-T3

COMMERCIAL

SINGLE WITH BUILT-IN DIODE

125W

600V

34A

HGTG30N60A4 vs HGTG7N60A4D

Certification

Related parts for HGTG30N60A4

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HGTG30N60A4 Specification

Part Number	Manufacturers	Description	Stock	Price
HGTG30N60A4 DISTI #V99:2348_06359037	ON Semiconductor	PTPIGBT TO247 60A 600V	888	1 $7.1225 10 $5.866 25 $5.476 50 $4.928 100 $4.668 250 $4.413 500 $3.325
HGTG30N60A4D DISTI #V99:2348_06359352	ON Semiconductor	Trans IGBT Chip N-CH 600V 75A 463000mW 3-Pin(3 Tab	450	1 $10.296 10 $8.49 25 $8.151 100 $7.087 250 $6.779 500 $6.154 1000 $5.39 2500 $5.187
HGTG30N60A4 DISTI #V36:1790_06359037	ON Semiconductor	PTPIGBT TO247 60A 600V	0
HGTG30N60A4D DISTI #V36:1790_06359352	ON Semiconductor	Trans IGBT Chip N-CH 600V 75A 463000mW 3-Pin(3 Tab	0
HGTG30N60A4 DISTI #HGTG30N60A4-ND	ON Semiconductor	IGBT 600V 75A 463W TO247 RoHS: Compliant	5265	1 $6.86 10 $6.195 25 $5.9068 450 $4.89822 900 $4.46602
HGTG30N60A4D DISTI #HGTG30N60A4D-ND	ON Semiconductor	IGBT 600V 75A 463W TO247 RoHS: Compliant	2162	1 $8.33 10 $7.529 450 $5.95298 900 $5.42771 1350 $4.72736
HGTG30N60A4 DISTI #32424646	ON Semiconductor	PTPIGBT TO247 60A 600V	2700	450 $4.3067
HGTG30N60A4 DISTI #32637936	ON Semiconductor	PTPIGBT TO247 60A 600V	2370	5 $2.2905 25 $2.2221 50 $2.1577 100 $2.0969 250 $2.0395 500 $1.9851 1000 $1.9335
HGTG30N60A4D DISTI #32381322	ON Semiconductor	Trans IGBT Chip N-CH 600V 75A 463000mW 3-Pin(3 Tab	1140	30 $5.08
HGTG30N60A4 DISTI #31154965	ON Semiconductor	PTPIGBT TO247 60A 600V	888	2 $6.216 10 $5.745 25 $5.476 50 $5.008 100 $4.668 250 $4.413 500 $3.325
HGTG30N60A4D DISTI #32421360	ON Semiconductor	Trans IGBT Chip N-CH 600V 75A 463000mW 3-Pin(3 Tab	450	2 $9.369 10 $8.491 25 $8.151 100 $7.087 250 $6.779 500 $6.154 1000 $5.39 2500 $5.187
HGTG30N60A4D DISTI #32910428	ON Semiconductor	Trans IGBT Chip N-CH 600V 75A 463000mW 3-Pin(3 Tab	425	9 $6.95
HGTG30N60A4 DISTI #32451013	ON Semiconductor	PTPIGBT TO247 60A 600V	421	16 $4
HGTG30N60A4 DISTI #HGTG30N60A4	ON Semiconductor	Trans IGBT Chip N-CH 600V 75A 3-Pin(3 Tab) TO-247 RoHS: Compliant	4121	30 $3.11922 60 $3.09896 90 $3.05923 150 $3.02051 300 $2.94593
HGTG30N60A4D DISTI #HGTG30N60A4D	ON Semiconductor	Trans IGBT Chip N-CH 600V 75A 3-Pin(3 Tab) TO-247 RoHS: Compliant	17100	1 $3.29 10 $2.99 25 $2.89 50 $2.79 100 $2.69 500 $2.59 1000 $2.39
HGTG30N60A4D DISTI #HGTG30N60A4D	ON Semiconductor	Trans IGBT Chip N-CH 600V 75A 3-Pin(3 Tab) TO-247 RoHS: Compliant	6970	30 $3.35634 60 $3.33455 90 $3.29179 150 $3.25013 300 $3.16988
HGTG30N60A4 DISTI #HGTG30N60A4	ON Semiconductor	Trans IGBT Chip N-CH 600V 75A 3-Pin(3 Tab) TO-247 RoHS: Compliant	0	1 $3.49 10 $3.29 25 $3.19 50 $3.09 100 $2.99 500 $2.99 1000 $2.89
HGTG30N60A4 DISTI #HGTG30N60A4	ON Semiconductor	Trans IGBT Chip N-CH 600V 75A 3-Pin(3 Tab) TO-247 RoHS: Compliant	0	95 $3.39 190 $3.39 285 $3.29 475 $3.29 950 $3.19
HGTG30N60A4 DISTI #60K5972	ON Semiconductor	Trans IGBT Chip N-CH 600V 75A 3-Pin(3 Tab) TO-247 RoHS: Compliant	0	1 $7.73 10 $7.02 25 $6.7 50 $6.27 100 $5.84 250 $5.59 500 $5.12
HGTG30N60A4D DISTI #HGTG30N60A4D	ON Semiconductor	Trans IGBT Chip N-CH 600V 75A 3-Pin(3 Tab) TO-247 RoHS: Compliant	0
HGTG30N60A4D DISTI #58K8903	ON Semiconductor	Trans IGBT Chip N-CH 600V 75A 3-Pin(3 Tab) TO-247 RoHS: Compliant	0	1 $8.19 10 $7.43 25 $7.09 50 $6.64 100 $6.19 250 $5.92
HGTG30N60A4 DISTI #60K5972	ON Semiconductor	IGBT, N, 600V, 75A, TO-247, DC Collector Current:	421	1 $3.2 10 $3.2 25 $3.2 50 $3.2 100 $3.2 250 $3.2 500 $3.2
HGTG30N60A4 DISTI #97K1400	ON Semiconductor	IGBT Single Transistor, General Purpose, 75 A, 2.6	1138	1 $7.25 10 $6.63 25 $6.35 50 $5.97 100 $5.6 250 $5.38 500 $4.97
HGTG30N60A4. DISTI #98AC1437	ON Semiconductor	PTPIGBT TO247 60A 600V ROHS COMPLIANT: YES	0	1 $7.52 10 $6.84 25 $6.52 50 $5.98 100 $5.57 250 $5.33 500 $4.88
HGTG30N60A4D DISTI #58K8903	ON Semiconductor	IGBT, TO-247, DC Collector Current:75A, Collecto	425	1 $5.56 10 $5.56 25 $5.56 50 $5.13 100 $5.13 250 $5.13
HGTG30N60A4D. DISTI #84AC1733	ON Semiconductor	PTPIGBT TO247 600V SMPS ROHS COMPLIANT: YES	0	1 $8.36 10 $7.58 25 $7.09 50 $6.64 100 $6.19 250 $5.92
HGTG30N60A4 DISTI #	ON Semiconductor	HGTG30N60A4 Series 600 V 75 A Flange Mount SMPS N- RoHS: Compliant	5200	5 $5.71 25 $4.25 50 $3.99 100 $3.75 250 $3.44
HGTG30N60A4D DISTI #	ON Semiconductor	HGTG30N60A4 Series 600 V 75 A Flange Mount SMPS N- RoHS: Compliant	2048	5 $6.94 25 $5.82 50 $5.61 100 $5.4 250 $5.13
HGTG30N60A4 DISTI #512-HGTG30N60A4	ON Semiconductor	IGBT Transistors 600V N-Channel IGBT SMPS Series RoHS: Compliant	990	1 $6.52 10 $5.9 25 $5.62 100 $4.88 250 $4.66 500 $4.25
HGTG30N60A4D DISTI #512-HGTG30N60A4D	ON Semiconductor	IGBT Transistors 600V N-Channel IGBT SMPS Series RoHS: Compliant	266	1 $7.93 10 $7.17 25 $6.83 100 $5.93 250 $5.67 500 $5.16 1000 $4.5
HGTG30N60A4 DISTI #	ON Semiconductor	Insulated Gate Bipolar Transistor, 75A I(C), 600V RoHS: Compliant	900	1 $4.29 25 $3.99 100 $3.82 500 $3.67 1000 $3.49
HGTG30N60A4 DISTI #6715436P	ON Semiconductor	TRANSISTOR IGBT N-CH 600V 75A TO247, TU	461	6 $5.11 15 $4.86
HGTG30N60A4 DISTI #6715436	ON Semiconductor	TRANSISTOR IGBT N-CH 600V 75A TO247, EA	222	1 $5.38 6 $5.11 15 $4.86
HGTG30N60A4D DISTI #	ON Semiconductor		611
HGTG30N60A4 DISTI #1095113	ON Semiconductor	IGBT, N, 600V, 75A, TO-247 RoHS: Compliant	1173	1 $10.03 10 $9.07 25 $8.64 100 $7.5 250 $7.17 500 $6.53
HGTG30N60A4D DISTI #9846611	ON Semiconductor	IGBT, TO-247 RoHS: Compliant	3762	1 $12.19 10 $11.03 25 $10.5 100 $9.12 250 $8.72 500 $7.94 1000 $6.92 2500 $6.67
HGTG30N60A4 DISTI #1095113	ON Semiconductor	IGBT, N, 600V, 75A, TO-247	1194	1 $5.69 5 $5.17 10 $4.47 50 $4.17 100 $3.87
HGTG30N60A4D DISTI #9846611	ON Semiconductor	IGBT, TO-247	5189	1 $6.85 5 $6.29 10 $5.42 50 $5.07 100 $4.71
HGTG30N60A4 DISTI #XSFP00000158992	Fairchild Semiconductor Corporation	RoHS: Compliant	3618	24 $8.5 3618 $7.73
HGTG30N60A4D DISTI #XSKDRABV0042291		RoHS: Compliant	2530	450 $4.27 2530 $3.99
HGTG30N60A4D DISTI #XSFP00000002032	Fairchild Semiconductor Corporation	RoHS: Compliant	1494	15 $13.88 1494 $12.62

HGTG30N~~(32)~~
HGTG30~~(32)~~
HGTG3~~(34)~~
HGTG~~(101)~~
HGT~~(123)~~

Fairchild/ON Semiconductor HGTG30N60A4

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