Fairchild/ON Semiconductor HGTG20N60A4

Name: HGTG20N60A4
Brand: Fairchild/ON Semiconductor
SKU: 3071997-HGTG20N60A4
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: HGTG20N60A4

Manufacturer:: Fairchild/ON Semiconductor

Ventron No:: 3071997-HGTG20N60A4

Description:: IGBT 600V 70A 290W TO247

ECAD Model:

Datasheet:: HGTG20N60A4

Specifications

Fairchild/ON Semiconductor HGTG20N60A4 technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor HGTG20N60A4.

Lifecycle Status
ACTIVE (Last Updated: 2 days ago)
Factory Lead Time
4 Weeks
Contact Plating
Tin
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-247-3
Number of Pins
3
Weight
6.39g
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tube
Published
2011
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Additional Feature
LOW CONDUCTION LOSS
HTS Code
8541.29.00.95
Subcategory
Insulated Gate BIP Transistors
Voltage - Rated DC
600V
Max Power Dissipation
290W
Current Rating
70A
Base Part Number
HGTG20N60
Number of Elements
1
Element Configuration
Single
Power Dissipation
290W
Case Connection
COLLECTOR
Input Type
Standard
Turn On Delay Time
15 ns
Transistor Application
POWER CONTROL
Rise Time
12ns
Polarity/Channel Type
N-CHANNEL
Turn-Off Delay Time
73 ns
Collector Emitter Voltage (VCEO)
600V
Max Collector Current
70A
Collector Emitter Breakdown Voltage
600V
Collector Emitter Saturation Voltage
1.8V
Turn On Time
28 ns
Test Condition
390V, 20A, 3 Ω, 15V
Vce(on) (Max) @ Vge, Ic
2.7V @ 15V, 20A
Turn Off Time-Nom (toff)
160 ns
Gate Charge
142nC
Current - Collector Pulsed (Icm)
280A
Td (on/off) @ 25°C
15ns/73ns
Switching Energy
105μJ (on), 150μJ (off)
Gate-Emitter Voltage-Max
20V
Gate-Emitter Thr Voltage-Max
7V
Height
20.82mm
Length
15.87mm
Width
4.82mm
REACH SVHC
No SVHC
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free

Description

HGTG20N60A4 Description The HGTG20N60A4 combines the advantages of a MOSFET's high input impedance with a bipolar transistor's low on-state conduction loss. This HGTG20N60A4 IGBT is suited for a variety of high-voltage switching applications requiring low conduction losses at high frequencies. The HGTG20N60A4 is designed for high-speed switching applications such as UPS, welding, and induction heating.
HGTG20N60A4 Features 40 A, 600 V @ TC = 110°C
Low Saturation Voltage: VCE(sat) = 1.8 V @ IC = 20 A
Typical Fall Time: 55 ns at TJ = 125°C
Low Conduction Loss
This is a Pb?Free Device
HGTG20N60A4 Applications UPS
Welder
Other Industrial

HGTG20N60A4 More Descriptions

Trans IGBT Chip N-CH 600V 70A 290000mW 3-Pin(3 Tab) TO-247 Rail
Insulated-Gate Bipolar Transistor (IGBT); Transistor Type:IGBT; Transistor Polarity:N Channel; Continuous Collector Current, Ic:70A; Collector Emitter Saturation Voltage, Vce(sat):1.8V; Power Dissipation, Pd:290W ;RoHS Compliant: Yes
The HGTG20N60A4 combines the best features of high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. This IGBT is ideal for many high voltage switching applications operating at high frequencies where low conduction losses are essential. This device has been optimized for fast switching applications, such as UPS, welder and induction heating.
IGBT, N, TO-247; Transistor Type:IGBT; DC Collector Current:70A; Collector Emitter Voltage Vces:2.7V; Power Dissipation Pd:290W; Collector Emitter Voltage V(br)ceo:600V; Transistor Case Style:TO-247; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Alternate Case Style:SOT-249; Current Ic Continuous a Max:70A; Current Temperature:25°C; Device Marking:HGTG20N60A4; Fall Time tf:32ns; Full Power Rating Temperature:25°C; No. of Transistors:1; Package / Case:TO-247; Pin Format:GCE; Power Dissipation Max:290W; Power Dissipation Pd:290W; Power Dissipation Pd:290W; Power Dissipation Ptot Max:290W; Pulsed Current Icm:280A; Rise Time:12ns; Termination Type:Through Hole; Transistor Polarity:N Channel; Voltage Vces:600V

Product Comparison

The three parts on the right have similar specifications to HGTG20N60A4.

Image

Part Number

Manufacturer

Lifecycle Status

Factory Lead Time

Contact Plating

Mount

Mounting Type

Package / Case

Number of Pins

Weight

Transistor Element Material

Operating Temperature

Packaging

Published

JESD-609 Code

Pbfree Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

ECCN Code

Additional Feature

HTS Code

Subcategory

Voltage - Rated DC

Max Power Dissipation

Current Rating

Base Part Number

Number of Elements

Element Configuration

Power Dissipation

Case Connection

Input Type

Turn On Delay Time

Transistor Application

Rise Time

Polarity/Channel Type

Turn-Off Delay Time

Collector Emitter Voltage (VCEO)

Max Collector Current

Collector Emitter Breakdown Voltage

Collector Emitter Saturation Voltage

Turn On Time

Test Condition

Vce(on) (Max) @ Vge, Ic

Turn Off Time-Nom (toff)

Gate Charge

Current - Collector Pulsed (Icm)

Td (on/off) @ 25°C

Switching Energy

Gate-Emitter Voltage-Max

Gate-Emitter Thr Voltage-Max

Height

Length

Width

REACH SVHC

Radiation Hardening

RoHS Status

Lead Free

Polarity

Max Breakdown Voltage

Continuous Collector Current

Fall Time-Max (tf)

Terminal Finish

Voltage - Collector Emitter Breakdown (Max)

IGBT Type

Surface Mount

Terminal Position

Peak Reflow Temperature (Cel)

Reach Compliance Code

Time@Peak Reflow Temperature-Max (s)

Pin Count

JESD-30 Code

Qualification Status

Configuration

Power - Max

Reverse Recovery Time

Current - Collector (Ic) (Max)

View Compare
HGTG20N60A4

Fairchild/ON Semiconductor

ACTIVE (Last Updated: 2 days ago)

4 Weeks

Tin

Through Hole

Through Hole

TO-247-3

3

6.39g

SILICON

-55°C~150°C TJ

Tube

2011

e3

yes

Active

1 (Unlimited)

3

EAR99

LOW CONDUCTION LOSS

8541.29.00.95

Insulated Gate BIP Transistors

600V

290W

70A

HGTG20N60

1

Single

290W

COLLECTOR

Standard

15 ns

POWER CONTROL

12ns

N-CHANNEL

73 ns

600V

70A

600V

1.8V

28 ns

390V, 20A, 3 Ω, 15V

2.7V @ 15V, 20A

160 ns

142nC

280A

15ns/73ns

105μJ (on), 150μJ (off)

20V

7V

20.82mm

15.87mm

4.82mm

No SVHC

No

ROHS3 Compliant

Lead Free

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-
HGTG30N60B3

Fairchild/ON Semiconductor

ACTIVE (Last Updated: 2 days ago)

4 Weeks

Tin

Through Hole

Through Hole

TO-247-3

3

6.39g

SILICON

-55°C~150°C TJ

Tube

2013

e3

yes

Active

1 (Unlimited)

3

EAR99

LOW CONDUCTION LOSS

8541.29.00.95

Insulated Gate BIP Transistors

600V

208W

60A

HGTG30N60

1

Single

208W

COLLECTOR

Standard

-

POWER CONTROL

-

-

-

600V

60A

600V

1.45V

56 ns

480V, 30A, 3 Ω, 15V

1.9V @ 15V, 30A

365 ns

170nC

220A

36ns/137ns

500μJ (on), 680μJ (off)

20V

6V

20.82mm

15.87mm

4.82mm

No SVHC

No

ROHS3 Compliant

Lead Free

NPN

600V

60A

150ns

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

HGTG20N60A4 vs HGTG30N60B3
HGTG27N120BN

Fairchild/ON Semiconductor

ACTIVE, NOT REC (Last Updated: 2 days ago)

44 Weeks

-

Through Hole

Through Hole

TO-247-3

3

6.39g

SILICON

-55°C~150°C TJ

Tube

-

e3

yes

Not For New Designs

1 (Unlimited)

3

EAR99

LOW CONDUCTION LOSS, AVALANCHE RATED

8541.29.00.95

-

1.2kV

500W

72A

-

1

Single

500W

COLLECTOR

Standard

24 ns

POWER CONTROL

-

N-CHANNEL

240 ns

1.2kV

72A

1.2kV

2.45V

42 ns

960V, 27A, 3 Ω, 15V

2.7V @ 15V, 27A

360 ns

270nC

216A

24ns/195ns

2.2mJ (on), 2.3mJ (off)

-

-

20.82mm

15.87mm

4.82mm

No SVHC

No

ROHS3 Compliant

Lead Free

-

-

72A

-

Tin (Sn)

1200V

NPT

-

-

-

-

-

-

-

-

-

-

-

-

HGTG20N60A4 vs HGTG27N120BN
HGTG7N60A4D

Fairchild/ON Semiconductor

-

-

-

-

Through Hole

TO-247-3

-

-

SILICON

-55°C~150°C TJ

Tube

-

e3

yes

Obsolete

3 (168 Hours)

3

-

LOW CONDUCTION LOSS

-

-

-

-

-

-

1

-

-

COLLECTOR

Standard

-

POWER CONTROL

-

N-CHANNEL

-

-

-

-

-

17 ns

390V, 7A, 25 Ω, 15V

2.7V @ 15V, 7A

205 ns

37nC

56A

11ns/100ns

55μJ (on), 60μJ (off)

-

-

-

-

-

-

-

ROHS3 Compliant

-

-

-

-

-

MATTE TIN

600V

-

NO

SINGLE

NOT APPLICABLE

unknown

NOT APPLICABLE

3

R-PSFM-T3

COMMERCIAL

SINGLE WITH BUILT-IN DIODE

125W

34ns

34A

HGTG20N60A4 vs HGTG7N60A4D