Fairchild/ON Semiconductor HGTG30N60C3D

Name: HGTG30N60C3D
Brand: Fairchild/ON Semiconductor
SKU: 2854573-HGTG30N60C3D
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: HGTG30N60C3D

Manufacturer:: Fairchild/ON Semiconductor

Ventron No:: 2854573-HGTG30N60C3D

Description:: IGBT 600V 63A 208W TO247

ECAD Model:

Datasheet:: HGTG30N60C3D

Specifications

Fairchild/ON Semiconductor HGTG30N60C3D technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor HGTG30N60C3D.

Lifecycle Status
ACTIVE, NOT REC (Last Updated: 2 days ago)
Factory Lead Time
7 Weeks
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-247-3
Number of Pins
3
Weight
6.39g
Transistor Element Material
SILICON
Operating Temperature
-40°C~150°C TJ
Packaging
Tube
Published
2011
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Not For New Designs
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
Tin (Sn)
Additional Feature
LOW CONDUCTION LOSS
HTS Code
8541.29.00.95
Voltage - Rated DC
600V
Max Power Dissipation
208W
Current Rating
30A
Base Part Number
HGTG30N60
Number of Elements
1
Polarity
NPN
Element Configuration
Single
Power Dissipation
208W
Input Type
Standard
Turn On Delay Time
40 ns
Transistor Application
MOTOR CONTROL
Rise Time
45ns
Turn-Off Delay Time
320 ns
Collector Emitter Voltage (VCEO)
600V
Max Collector Current
63A
Reverse Recovery Time
60ns
Collector Emitter Breakdown Voltage
600V
Collector Emitter Saturation Voltage
1.5V
Turn On Time
85 ns
Vce(on) (Max) @ Vge, Ic
1.8V @ 15V, 30A
Turn Off Time-Nom (toff)
550 ns
Gate Charge
162nC
Current - Collector Pulsed (Icm)
252A
Switching Energy
1.05mJ (on), 2.5mJ (off)
Height
20.82mm
Length
15.87mm
Width
4.82mm
REACH SVHC
No SVHC
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free

Description

HGTG30N60C3D Description

HGTG30N60C3D IGBT is a MOS-gated switcher that operates at high voltage that blends the most effective characteristics of MOSFETs with bipolar transistors. ON Semiconductor HGTG30N60C3D features the high impedance at the input of a MOSFET and the reduced on-state conduction loss that is typical of the bipolar transistor. HGTG30N60C3D circuit is ideal for various high voltage switching applications that operate at moderate frequencies, where the lowest conduction losses can be essential.

HGTG30N60C3D Features

63A, 600V, TC = 25°C
Typical Fall Time: 230ns @ TJ = 150°C
Short Circuit Rating
Low Conduction Loss
Hyperfast Anti-Parallel Diode

HGTG30N60C3D Applications

Motion Control
Sewing machine
CNC
Motor control
Home appliances

HGTG30N60C3D More Descriptions

600V,63A,UFS,SERIES NCH IGBT W/ANTI-PARALLEL HYPERFAST DIODE
IGBT,N CH,600V,30A,TO-247; DC Collector Current:63A; Collector Emitter Voltage Vces:1.8V; Power Dissipation Max:208W; Collector Emitter Voltage V(br)ceo:600V; Operating Temperature Range:-40°C to 150°C; Transistor Case Style:TO-247; No. of Pins:3
IGBT; Transistor Type:IGBT; Transistor Polarity:NPN; Continuous Collector Current, Ic:63A; Collector Emitter Saturation Voltage, Vce(sat):2V; Power Dissipation, Pd:208W; Package/Case:TO-247; C-E Breakdown Voltage:600V ;RoHS Compliant: Yes
The HGTG30N60C3D is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. The device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25°C and 150°C. The IGBT used is the development type TA49051. The diode used in anti-parallel with the IGBT is the development type TA49053.The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential.Formerly Developmental Type TA49014.

Product Comparison

The three parts on the right have similar specifications to HGTG30N60C3D.

Image

Part Number

Manufacturer

Lifecycle Status

Factory Lead Time

Mount

Mounting Type

Package / Case

Number of Pins

Weight

Transistor Element Material

Operating Temperature

Packaging

Published

JESD-609 Code

Pbfree Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

ECCN Code

Terminal Finish

Additional Feature

HTS Code

Voltage - Rated DC

Max Power Dissipation

Current Rating

Base Part Number

Number of Elements

Polarity

Element Configuration

Power Dissipation

Input Type

Turn On Delay Time

Transistor Application

Rise Time

Turn-Off Delay Time

Collector Emitter Voltage (VCEO)

Max Collector Current

Reverse Recovery Time

Collector Emitter Breakdown Voltage

Collector Emitter Saturation Voltage

Turn On Time

Vce(on) (Max) @ Vge, Ic

Turn Off Time-Nom (toff)

Gate Charge

Current - Collector Pulsed (Icm)

Switching Energy

Height

Length

Width

REACH SVHC

Radiation Hardening

RoHS Status

Lead Free

Contact Plating

Subcategory

Case Connection

Polarity/Channel Type

Test Condition

Td (on/off) @ 25°C

Gate-Emitter Voltage-Max

Gate-Emitter Thr Voltage-Max

Voltage - Collector Emitter Breakdown (Max)

IGBT Type

Fall Time-Max (tf)

Surface Mount

Terminal Position

Peak Reflow Temperature (Cel)

Reach Compliance Code

Time@Peak Reflow Temperature-Max (s)

Pin Count

JESD-30 Code

Qualification Status

Configuration

Power - Max

Current - Collector (Ic) (Max)

View Compare
HGTG30N60C3D

Fairchild/ON Semiconductor

ACTIVE, NOT REC (Last Updated: 2 days ago)

7 Weeks

Through Hole

Through Hole

TO-247-3

3

6.39g

SILICON

-40°C~150°C TJ

Tube

2011

e3

yes

Not For New Designs

1 (Unlimited)

3

EAR99

Tin (Sn)

LOW CONDUCTION LOSS

8541.29.00.95

600V

208W

30A

HGTG30N60

1

NPN

Single

208W

Standard

40 ns

MOTOR CONTROL

45ns

320 ns

600V

63A

60ns

600V

1.5V

85 ns

1.8V @ 15V, 30A

550 ns

162nC

252A

1.05mJ (on), 2.5mJ (off)

20.82mm

15.87mm

4.82mm

No SVHC

No

ROHS3 Compliant

Lead Free

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-
HGTG20N60A4

Fairchild/ON Semiconductor

ACTIVE (Last Updated: 2 days ago)

4 Weeks

Through Hole

Through Hole

TO-247-3

3

6.39g

SILICON

-55°C~150°C TJ

Tube

2011

e3

yes

Active

1 (Unlimited)

3

EAR99

-

LOW CONDUCTION LOSS

8541.29.00.95

600V

290W

70A

HGTG20N60

1

-

Single

290W

Standard

15 ns

POWER CONTROL

12ns

73 ns

600V

70A

-

600V

1.8V

28 ns

2.7V @ 15V, 20A

160 ns

142nC

280A

105μJ (on), 150μJ (off)

20.82mm

15.87mm

4.82mm

No SVHC

No

ROHS3 Compliant

Lead Free

Tin

Insulated Gate BIP Transistors

COLLECTOR

N-CHANNEL

390V, 20A, 3 Ω, 15V

15ns/73ns

20V

7V

-

-

-

-

-

-

-

-

-

-

-

-

-

-

HGTG30N60C3D vs HGTG20N60A4
HGTG18N120BND

Fairchild/ON Semiconductor

ACTIVE (Last Updated: 2 days ago)

10 Weeks

Through Hole

Through Hole

TO-247-3

3

6.39g

SILICON

-55°C~150°C TJ

Tube

2011

-

yes

Active

1 (Unlimited)

3

EAR99

-

LOW CONDUCTION LOSS

8541.29.00.95

1.2kV

390W

54A

-

1

NPN

Single

390W

Standard

23 μs

MOTOR CONTROL

22ns

170 μs

1.2kV

54A

75 ns

1.2kV

2.45V

38 ns

2.7V @ 15V, 18A

345 ns

165nC

160A

1.9mJ (on), 1.8mJ (off)

20.82mm

15.87mm

4.82mm

No SVHC

No

ROHS3 Compliant

Lead Free

-

Insulated Gate BIP Transistors

-

-

960V, 18A, 3 Ω, 15V

23ns/170ns

20V

-

1200V

NPT

200ns

-

-

-

-

-

-

-

-

-

-

-

HGTG30N60C3D vs HGTG18N120BND
HGTG7N60A4D

Fairchild/ON Semiconductor

-

-

-

Through Hole

TO-247-3

-

-

SILICON

-55°C~150°C TJ

Tube

-

e3

yes

Obsolete

3 (168 Hours)

3

-

MATTE TIN

LOW CONDUCTION LOSS

-

-

-

-

-

1

-

-

-

Standard

-

POWER CONTROL

-

-

-

-

34ns

-

-

17 ns

2.7V @ 15V, 7A

205 ns

37nC

56A

55μJ (on), 60μJ (off)

-

-

-

-

-

ROHS3 Compliant

-

-

-

COLLECTOR

N-CHANNEL

390V, 7A, 25 Ω, 15V

11ns/100ns

-

-

600V

-

-

NO

SINGLE

NOT APPLICABLE

unknown

NOT APPLICABLE

3

R-PSFM-T3

COMMERCIAL

SINGLE WITH BUILT-IN DIODE

125W

34A

HGTG30N60C3D vs HGTG7N60A4D