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HGTG12N60A4D

Fairchild/ON Semiconductor HGTG12N60A4D

Part Number:
HGTG12N60A4D
Manufacturer:
Fairchild/ON Semiconductor
Ventron No:
2495678-HGTG12N60A4D
Description:
IGBT 600V 54A 167W TO247
ECAD Model:
Datasheet:
HGTG12N60A4D

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Specifications
Fairchild/ON Semiconductor HGTG12N60A4D technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor HGTG12N60A4D.
  • Lifecycle Status
    ACTIVE, NOT REC (Last Updated: 2 days ago)
  • Factory Lead Time
    4 Weeks
  • Contact Plating
    Tin
  • Mount
    Through Hole
  • Mounting Type
    Through Hole
  • Package / Case
    TO-247-3
  • Number of Pins
    3
  • Weight
    6.39g
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Tube
  • Published
    2002
  • JESD-609 Code
    e3
  • Pbfree Code
    yes
  • Part Status
    Not For New Designs
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    3
  • ECCN Code
    EAR99
  • Additional Feature
    LOW CONDUCTION LOSS
  • HTS Code
    8541.29.00.95
  • Voltage - Rated DC
    600V
  • Max Power Dissipation
    167W
  • Current Rating
    54A
  • Base Part Number
    HGTG12N60
  • Number of Elements
    1
  • Element Configuration
    Single
  • Power Dissipation
    167W
  • Case Connection
    COLLECTOR
  • Input Type
    Standard
  • Turn On Delay Time
    17 ns
  • Transistor Application
    POWER CONTROL
  • Rise Time
    16ns
  • Polarity/Channel Type
    N-CHANNEL
  • Turn-Off Delay Time
    96 ns
  • Collector Emitter Voltage (VCEO)
    600V
  • Max Collector Current
    54A
  • Reverse Recovery Time
    30 ns
  • Collector Emitter Breakdown Voltage
    600V
  • Collector Emitter Saturation Voltage
    2V
  • Turn On Time
    33 ns
  • Test Condition
    390V, 12A, 10 Ω, 15V
  • Vce(on) (Max) @ Vge, Ic
    2.7V @ 15V, 12A
  • Continuous Collector Current
    60A
  • Turn Off Time-Nom (toff)
    180 ns
  • Gate Charge
    78nC
  • Current - Collector Pulsed (Icm)
    96A
  • Td (on/off) @ 25°C
    17ns/96ns
  • Switching Energy
    55μJ (on), 50μJ (off)
  • Height
    20.82mm
  • Length
    15.87mm
  • Width
    4.82mm
  • REACH SVHC
    No SVHC
  • Radiation Hardening
    No
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Lead Free
Description
HGTG12N60A4D Description
The HGTG12N60A4D from ON Semiconductor is a 600V N-channel IGBT with an anti-parallel hyperfast diode. The MOS gate high voltage switching IGBT family is represented by this SMPS series. The IGBT combines the best characteristics of MOSFETs and bipolar transistors. HGTG12N60A4D has a MOSFET's high input impedance and a bipolar transistor's low on-state conduction loss. Reduces conduction and switching losses, allowing for the construction of high-efficiency and reliable systems. Higher control and repeatability of the top-side structure derive from an optimized production process, leading to tighter specifications and better EMI performance.

HGTG12N60A4D Features
Typical Fall Time............70ns at TJ = 125°C
Low Conduction Loss
23A, 600V @ TC = 110°C
Low Saturation Voltage : V CE(sat) = 2.0 V @ I C = 12A


HGTG12N60A4D Applications
Uninterruptible Power Supply

High voltage switching applications
HGTG12N60A4D More Descriptions
Trans IGBT Chip N=-CH 600V 54A 167000mW 3-Pin(3 Tab) TO-247 Rail
600V SMPS Series N-Channel IGBT Transistor with Anti-Parallel Hyperfast Diode
HGTG12N60A4D Series 600 V 54 A Flange Mount SMPS N-Channel IGBT-TO-247
The HGTG12N60A4D combines the best features of high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. This IGBT is ideal for many high voltage switching applications operating at high frequencies where low conduction losses are essential. This device has been optimized for fast switching applications, such as UPS and welder.
IGBT, TO-247; Transistor Type:IGBT; DC Collector Current:54A; Collector Emitter Voltage Vces:2.7V; Power Dissipation Pd:167W; Collector Emitter Voltage V(br)ceo:600V; Operating Temperature Range:-55°C to 150°C; Transistor Case Style:TO-247; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Alternate Case Style:SOT-249; Current Ic Continuous a Max:54A; Current Temperature:25°C; Device Marking:HGTG12N60A4D; Fall Time tf:95ns; Full Power Rating Temperature:25°C; No. of Transistors:1; Package / Case:TO-247; Power Dissipation Max:167W; Power Dissipation Pd:167W; Power Dissipation Pd:167W; Pulsed Current Icm:96A; Rise Time:16ns; Termination Type:Through Hole; Transistor Polarity:N Channel; Voltage Vces:600V
Product Comparison
The three parts on the right have similar specifications to HGTG12N60A4D.
  • Image
    Part Number
    Manufacturer
    Lifecycle Status
    Factory Lead Time
    Contact Plating
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Weight
    Transistor Element Material
    Operating Temperature
    Packaging
    Published
    JESD-609 Code
    Pbfree Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    ECCN Code
    Additional Feature
    HTS Code
    Voltage - Rated DC
    Max Power Dissipation
    Current Rating
    Base Part Number
    Number of Elements
    Element Configuration
    Power Dissipation
    Case Connection
    Input Type
    Turn On Delay Time
    Transistor Application
    Rise Time
    Polarity/Channel Type
    Turn-Off Delay Time
    Collector Emitter Voltage (VCEO)
    Max Collector Current
    Reverse Recovery Time
    Collector Emitter Breakdown Voltage
    Collector Emitter Saturation Voltage
    Turn On Time
    Test Condition
    Vce(on) (Max) @ Vge, Ic
    Continuous Collector Current
    Turn Off Time-Nom (toff)
    Gate Charge
    Current - Collector Pulsed (Icm)
    Td (on/off) @ 25°C
    Switching Energy
    Height
    Length
    Width
    REACH SVHC
    Radiation Hardening
    RoHS Status
    Lead Free
    Subcategory
    Polarity
    Max Breakdown Voltage
    Gate-Emitter Voltage-Max
    Gate-Emitter Thr Voltage-Max
    Fall Time-Max (tf)
    Terminal Finish
    Voltage - Collector Emitter Breakdown (Max)
    IGBT Type
    Reach Compliance Code
    Power - Max
    Current - Collector (Ic) (Max)
    View Compare
  • HGTG12N60A4D
    HGTG12N60A4D
    Fairchild/ON Semiconductor
    ACTIVE, NOT REC (Last Updated: 2 days ago)
    4 Weeks
    Tin
    Through Hole
    Through Hole
    TO-247-3
    3
    6.39g
    SILICON
    -55°C~150°C TJ
    Tube
    2002
    e3
    yes
    Not For New Designs
    1 (Unlimited)
    3
    EAR99
    LOW CONDUCTION LOSS
    8541.29.00.95
    600V
    167W
    54A
    HGTG12N60
    1
    Single
    167W
    COLLECTOR
    Standard
    17 ns
    POWER CONTROL
    16ns
    N-CHANNEL
    96 ns
    600V
    54A
    30 ns
    600V
    2V
    33 ns
    390V, 12A, 10 Ω, 15V
    2.7V @ 15V, 12A
    60A
    180 ns
    78nC
    96A
    17ns/96ns
    55μJ (on), 50μJ (off)
    20.82mm
    15.87mm
    4.82mm
    No SVHC
    No
    ROHS3 Compliant
    Lead Free
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • HGTG30N60B3
    HGTG30N60B3
    Fairchild/ON Semiconductor
    ACTIVE (Last Updated: 2 days ago)
    4 Weeks
    Tin
    Through Hole
    Through Hole
    TO-247-3
    3
    6.39g
    SILICON
    -55°C~150°C TJ
    Tube
    2013
    e3
    yes
    Active
    1 (Unlimited)
    3
    EAR99
    LOW CONDUCTION LOSS
    8541.29.00.95
    600V
    208W
    60A
    HGTG30N60
    1
    Single
    208W
    COLLECTOR
    Standard
    -
    POWER CONTROL
    -
    -
    -
    600V
    60A
    -
    600V
    1.45V
    56 ns
    480V, 30A, 3 Ω, 15V
    1.9V @ 15V, 30A
    60A
    365 ns
    170nC
    220A
    36ns/137ns
    500μJ (on), 680μJ (off)
    20.82mm
    15.87mm
    4.82mm
    No SVHC
    No
    ROHS3 Compliant
    Lead Free
    Insulated Gate BIP Transistors
    NPN
    600V
    20V
    6V
    150ns
    -
    -
    -
    -
    -
    -
    HGTG12N60A4D vs HGTG30N60B3
  • HGTG27N120BN
    HGTG27N120BN
    Fairchild/ON Semiconductor
    ACTIVE, NOT REC (Last Updated: 2 days ago)
    44 Weeks
    -
    Through Hole
    Through Hole
    TO-247-3
    3
    6.39g
    SILICON
    -55°C~150°C TJ
    Tube
    -
    e3
    yes
    Not For New Designs
    1 (Unlimited)
    3
    EAR99
    LOW CONDUCTION LOSS, AVALANCHE RATED
    8541.29.00.95
    1.2kV
    500W
    72A
    -
    1
    Single
    500W
    COLLECTOR
    Standard
    24 ns
    POWER CONTROL
    -
    N-CHANNEL
    240 ns
    1.2kV
    72A
    -
    1.2kV
    2.45V
    42 ns
    960V, 27A, 3 Ω, 15V
    2.7V @ 15V, 27A
    72A
    360 ns
    270nC
    216A
    24ns/195ns
    2.2mJ (on), 2.3mJ (off)
    20.82mm
    15.87mm
    4.82mm
    No SVHC
    No
    ROHS3 Compliant
    Lead Free
    -
    -
    -
    -
    -
    -
    Tin (Sn)
    1200V
    NPT
    -
    -
    -
    HGTG12N60A4D vs HGTG27N120BN
  • HGTG11N120CN
    HGTG11N120CN
    Fairchild/ON Semiconductor
    -
    -
    -
    -
    Through Hole
    TO-247-3
    -
    -
    -
    -55°C~150°C TJ
    Tube
    -
    -
    -
    Obsolete
    1 (Unlimited)
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    Standard
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    960V, 11A, 10 Ω, 15V
    2.4V @ 15V, 11A
    -
    -
    100nC
    80A
    23ns/180ns
    400μJ (on), 1.3mJ (off)
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    1200V
    NPT
    compliant
    298W
    43A
    HGTG12N60A4D vs HGTG11N120CN
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS
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