Fairchild/ON Semiconductor HGTG18N120BND

Name: HGTG18N120BND
Brand: Fairchild/ON Semiconductor
SKU: 2854857-HGTG18N120BND
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: HGTG18N120BND

Manufacturer:: Fairchild/ON Semiconductor

Ventron No:: 2854857-HGTG18N120BND

Description:: IGBT 1200V 54A 390W TO247

ECAD Model:

Datasheet:: HGTG18N120BND

Specifications

Fairchild/ON Semiconductor HGTG18N120BND technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor HGTG18N120BND.

Lifecycle Status
ACTIVE (Last Updated: 2 days ago)
Factory Lead Time
10 Weeks
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-247-3
Number of Pins
3
Weight
6.39g
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tube
Published
2011
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Additional Feature
LOW CONDUCTION LOSS
HTS Code
8541.29.00.95
Subcategory
Insulated Gate BIP Transistors
Voltage - Rated DC
1.2kV
Max Power Dissipation
390W
Current Rating
54A
Number of Elements
1
Polarity
NPN
Element Configuration
Single
Power Dissipation
390W
Input Type
Standard
Turn On Delay Time
23 μs
Transistor Application
MOTOR CONTROL
Rise Time
22ns
Turn-Off Delay Time
170 μs
Collector Emitter Voltage (VCEO)
1.2kV
Max Collector Current
54A
Reverse Recovery Time
75 ns
Collector Emitter Breakdown Voltage
1.2kV
Voltage - Collector Emitter Breakdown (Max)
1200V
Collector Emitter Saturation Voltage
2.45V
Turn On Time
38 ns
Test Condition
960V, 18A, 3 Ω, 15V
Vce(on) (Max) @ Vge, Ic
2.7V @ 15V, 18A
Turn Off Time-Nom (toff)
345 ns
IGBT Type
NPT
Gate Charge
165nC
Current - Collector Pulsed (Icm)
160A
Td (on/off) @ 25°C
23ns/170ns
Switching Energy
1.9mJ (on), 1.8mJ (off)
Gate-Emitter Voltage-Max
20V
Fall Time-Max (tf)
200ns
Height
20.82mm
Length
15.87mm
Width
4.82mm
REACH SVHC
No SVHC
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free

Description

HGTG18N120BND Description
The HGTG18N120BND is an IGBT with a Non-Punch Through (NPT) design. The MOS gate high voltage switching IGBT family has a new member. IGBTs are a hybrid of MOSFETs and bipolar transistors that combine the best of both worlds. This device possesses a MOSFET's high input impedance and a bipolar transistor's low on-state conduction loss. Many high-voltage switching applications with moderate frequencies and low conduction losses, such as AC and DC motor controllers, power supplies, and drivers for solenoids, relays, and contactors, benefit from the IGBT. HGTG18N120BND applications include UPS and other industries.

HGTG18N120BND Features
Short Circuit Rating
Low Conduction Loss
This Device is Pb?Free
26 A, 1200 V, TC = 110°C
Low Saturation Voltage: VCE(sat) = 2.45 V @ IC = 18 A
Typical Fall Time . . . . . . . . . . . . . 140 ns at TJ = 150°C

HGTG18N120BND Applications
UPS
Other industries

HGTG18N120BND More Descriptions

Trans IGBT Chip N-CH 1200V 54A 390000mW 3-Pin(3 Tab) TO-247 Rail
HGTG18N120BND Series 1200 V 54 A Flange Mount NPT N-Channel IGBT-TO-247
IGBT, N, TO-247; Transistor Type:IGBT; DC Collector Current:54A; Collector Emitter Voltage Vces:2.7V; Power Dissipation Pd:390W; Collector Emitter Voltage V(br)ceo:1.2kV; Transistor Case Style:TO-247; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Alternate Case Style:SOT-249; Current Ic @ Vce Sat:18A; Current Ic Continuous a Max:54A; Device Marking:HGTG18N120BND; Fall Time Max:140ns; Fall Time Typ:90ns; Package / Case:TO-247; Power Dissipation Max:390W; Power Dissipation Pd:390W; Power Dissipation Pd:390W; Pulsed Current Icm:160A; Rise Time:22ns; Termination Type:Through Hole; Transistor Polarity:N Channel; Voltage Vces:1.2kV
HGTG18N120BND is based on Non- Punch Through(NPT) IGBT designs. The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as UPS, solar inverter, motor control and power supplies.

Product Comparison

The three parts on the right have similar specifications to HGTG18N120BND.

Image

Part Number

Manufacturer

Lifecycle Status

Factory Lead Time

Mount

Mounting Type

Package / Case

Number of Pins

Weight

Transistor Element Material

Operating Temperature

Packaging

Published

Pbfree Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

ECCN Code

Additional Feature

HTS Code

Subcategory

Voltage - Rated DC

Max Power Dissipation

Current Rating

Number of Elements

Polarity

Element Configuration

Power Dissipation

Input Type

Turn On Delay Time

Transistor Application

Rise Time

Turn-Off Delay Time

Collector Emitter Voltage (VCEO)

Max Collector Current

Reverse Recovery Time

Collector Emitter Breakdown Voltage

Voltage - Collector Emitter Breakdown (Max)

Collector Emitter Saturation Voltage

Turn On Time

Test Condition

Vce(on) (Max) @ Vge, Ic

Turn Off Time-Nom (toff)

IGBT Type

Gate Charge

Current - Collector Pulsed (Icm)

Td (on/off) @ 25°C

Switching Energy

Gate-Emitter Voltage-Max

Fall Time-Max (tf)

Height

Length

Width

REACH SVHC

Radiation Hardening

RoHS Status

Lead Free

Contact Plating

JESD-609 Code

Base Part Number

Case Connection

Polarity/Channel Type

Gate-Emitter Thr Voltage-Max

Terminal Finish

Continuous Collector Current

Reach Compliance Code

Power - Max

Current - Collector (Ic) (Max)

View Compare
HGTG18N120BND

Fairchild/ON Semiconductor

ACTIVE (Last Updated: 2 days ago)

10 Weeks

Through Hole

Through Hole

TO-247-3

3

6.39g

SILICON

-55°C~150°C TJ

Tube

2011

yes

Active

1 (Unlimited)

3

EAR99

LOW CONDUCTION LOSS

8541.29.00.95

Insulated Gate BIP Transistors

1.2kV

390W

54A

1

NPN

Single

390W

Standard

23 μs

MOTOR CONTROL

22ns

170 μs

1.2kV

54A

75 ns

1.2kV

1200V

2.45V

38 ns

960V, 18A, 3 Ω, 15V

2.7V @ 15V, 18A

345 ns

NPT

165nC

160A

23ns/170ns

1.9mJ (on), 1.8mJ (off)

20V

200ns

20.82mm

15.87mm

4.82mm

No SVHC

No

ROHS3 Compliant

Lead Free

-

-

-

-

-

-

-

-

-

-

-

-
HGTG20N60A4

Fairchild/ON Semiconductor

ACTIVE (Last Updated: 2 days ago)

4 Weeks

Through Hole

Through Hole

TO-247-3

3

6.39g

SILICON

-55°C~150°C TJ

Tube

2011

yes

Active

1 (Unlimited)

3

EAR99

LOW CONDUCTION LOSS

8541.29.00.95

Insulated Gate BIP Transistors

600V

290W

70A

1

-

Single

290W

Standard

15 ns

POWER CONTROL

12ns

73 ns

600V

70A

-

600V

-

1.8V

28 ns

390V, 20A, 3 Ω, 15V

2.7V @ 15V, 20A

160 ns

-

142nC

280A

15ns/73ns

105μJ (on), 150μJ (off)

20V

-

20.82mm

15.87mm

4.82mm

No SVHC

No

ROHS3 Compliant

Lead Free

Tin

e3

HGTG20N60

COLLECTOR

N-CHANNEL

7V

-

-

-

-

-

HGTG18N120BND vs HGTG20N60A4
HGTG27N120BN

Fairchild/ON Semiconductor

ACTIVE, NOT REC (Last Updated: 2 days ago)

44 Weeks

Through Hole

Through Hole

TO-247-3

3

6.39g

SILICON

-55°C~150°C TJ

Tube

-

yes

Not For New Designs

1 (Unlimited)

3

EAR99

LOW CONDUCTION LOSS, AVALANCHE RATED

8541.29.00.95

-

1.2kV

500W

72A

1

-

Single

500W

Standard

24 ns

POWER CONTROL

-

240 ns

1.2kV

72A

-

1.2kV

1200V

2.45V

42 ns

960V, 27A, 3 Ω, 15V

2.7V @ 15V, 27A

360 ns

NPT

270nC

216A

24ns/195ns

2.2mJ (on), 2.3mJ (off)

-

-

20.82mm

15.87mm

4.82mm

No SVHC

No

ROHS3 Compliant

Lead Free

-

e3

-

COLLECTOR

N-CHANNEL

-

Tin (Sn)

72A

-

-

-

HGTG18N120BND vs HGTG27N120BN
HGTG11N120CN

Fairchild/ON Semiconductor

-

-

-

Through Hole

TO-247-3

-

-

-

-55°C~150°C TJ

Tube

-

-

Obsolete

1 (Unlimited)

-

-

-

-

-

-

-

-

-

-

-

-

Standard

-

-

-

-

-

-

-

-

1200V

-

-

960V, 11A, 10 Ω, 15V

2.4V @ 15V, 11A

-

NPT

100nC

80A

23ns/180ns

400μJ (on), 1.3mJ (off)

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

compliant

298W

43A

HGTG18N120BND vs HGTG11N120CN