Fairchild/ON Semiconductor HGTG27N120BN

Name: HGTG27N120BN
Brand: Fairchild/ON Semiconductor
SKU: 2496572-HGTG27N120BN
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: HGTG27N120BN

Manufacturer:: Fairchild/ON Semiconductor

Ventron No:: 2496572-HGTG27N120BN

Description:: IGBT 1200V 72A 500W TO247

ECAD Model:

Datasheet:: HGTG27N120BN

Specifications

Fairchild/ON Semiconductor HGTG27N120BN technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor HGTG27N120BN.

Lifecycle Status
ACTIVE, NOT REC (Last Updated: 2 days ago)
Factory Lead Time
44 Weeks
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-247-3
Number of Pins
3
Weight
6.39g
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tube
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Not For New Designs
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
Tin (Sn)
Additional Feature
LOW CONDUCTION LOSS, AVALANCHE RATED
HTS Code
8541.29.00.95
Voltage - Rated DC
1.2kV
Max Power Dissipation
500W
Current Rating
72A
Number of Elements
1
Element Configuration
Single
Power Dissipation
500W
Case Connection
COLLECTOR
Input Type
Standard
Turn On Delay Time
24 ns
Transistor Application
POWER CONTROL
Polarity/Channel Type
N-CHANNEL
Turn-Off Delay Time
240 ns
Collector Emitter Voltage (VCEO)
1.2kV
Max Collector Current
72A
Collector Emitter Breakdown Voltage
1.2kV
Voltage - Collector Emitter Breakdown (Max)
1200V
Collector Emitter Saturation Voltage
2.45V
Turn On Time
42 ns
Test Condition
960V, 27A, 3 Ω, 15V
Vce(on) (Max) @ Vge, Ic
2.7V @ 15V, 27A
Continuous Collector Current
72A
Turn Off Time-Nom (toff)
360 ns
IGBT Type
NPT
Gate Charge
270nC
Current - Collector Pulsed (Icm)
216A
Td (on/off) @ 25°C
24ns/195ns
Switching Energy
2.2mJ (on), 2.3mJ (off)
Height
20.82mm
Length
15.87mm
Width
4.82mm
REACH SVHC
No SVHC
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free

Description

HGTG27N120BN Description
The HGTG27N120BN is an IGBT with a NonPunch Through (NPT) design. The MOS gated high voltage switching IGBT family has a new member. IGBTs are a hybrid of MOSFETs and bipolar transistors that combine the best of both worlds. This device has a MOSFET's high input impedance and a bipolar transistor's low on-state conduction loss.

HGTG27N120BN Features
?TC = 25oC, 72A, 1200V
?SOA Switching Capability of 1200V
?At TJ = 150°C, a typical fall time is 140ns.
?Rat ing in a short circuit
?Low Loss Conductivity
?SPICE Model for Thermal Impedance

HGTG27N120BN Applications
HGTG27N120BN is intended for general use and can be used in a variety of situations.

HGTG27N120BN More Descriptions

Trans IGBT Chip N-CH 1200V 72A 500000mW 3-Pin(3 Tab) TO-247 Rail
HGTG27N120BN 72 A 1200 V NPT Series N-Channel IGBT - TO-247-3
Transistor HGTG27N120 IGBT N-Channel 1.2kVolt 72Amp TO-247
HGTG27N120BN is based on Non- Punch Through(NPT) IGBT designs. The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as: UPS, solar inverter, motor control and power supplies.
IGBT, N 72A, 1200V TO-247; Transistor Type:IGBT; DC Collector Current:72A; Collector Emitter Voltage Vces:2.7V; Power Dissipation Pd:500W; Collector Emitter Voltage V(br)ceo:1.2kV; Operating Temperature Range:-55°C to 150°C; Transistor Case Style:TO-247; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Ic Continuous a Max:72A; Package / Case:TO-247; Power Dissipation Max:500W; Power Dissipation Pd:500W; Termination Type:Through Hole; Transistor Polarity:N Channel; Voltage Vces:1.2kV

Product Comparison

The three parts on the right have similar specifications to HGTG27N120BN.

Image

Part Number

Manufacturer

Lifecycle Status

Factory Lead Time

Mount

Mounting Type

Package / Case

Number of Pins

Weight

Transistor Element Material

Operating Temperature

Packaging

JESD-609 Code

Pbfree Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

ECCN Code

Terminal Finish

Additional Feature

HTS Code

Voltage - Rated DC

Max Power Dissipation

Current Rating

Number of Elements

Element Configuration

Power Dissipation

Case Connection

Input Type

Turn On Delay Time

Transistor Application

Polarity/Channel Type

Turn-Off Delay Time

Collector Emitter Voltage (VCEO)

Max Collector Current

Collector Emitter Breakdown Voltage

Voltage - Collector Emitter Breakdown (Max)

Collector Emitter Saturation Voltage

Turn On Time

Test Condition

Vce(on) (Max) @ Vge, Ic

Continuous Collector Current

Turn Off Time-Nom (toff)

IGBT Type

Gate Charge

Current - Collector Pulsed (Icm)

Td (on/off) @ 25°C

Switching Energy

Height

Length

Width

REACH SVHC

Radiation Hardening

RoHS Status

Lead Free

Contact Plating

Published

Subcategory

Base Part Number

Polarity

Max Breakdown Voltage

Gate-Emitter Voltage-Max

Gate-Emitter Thr Voltage-Max

Fall Time-Max (tf)

Rise Time

Reverse Recovery Time

Reach Compliance Code

Power - Max

Current - Collector (Ic) (Max)

View Compare
HGTG27N120BN

Fairchild/ON Semiconductor

ACTIVE, NOT REC (Last Updated: 2 days ago)

44 Weeks

Through Hole

Through Hole

TO-247-3

3

6.39g

SILICON

-55°C~150°C TJ

Tube

e3

yes

Not For New Designs

1 (Unlimited)

3

EAR99

Tin (Sn)

LOW CONDUCTION LOSS, AVALANCHE RATED

8541.29.00.95

1.2kV

500W

72A

1

Single

500W

COLLECTOR

Standard

24 ns

POWER CONTROL

N-CHANNEL

240 ns

1.2kV

72A

1.2kV

1200V

2.45V

42 ns

960V, 27A, 3 Ω, 15V

2.7V @ 15V, 27A

72A

360 ns

NPT

270nC

216A

24ns/195ns

2.2mJ (on), 2.3mJ (off)

20.82mm

15.87mm

4.82mm

No SVHC

No

ROHS3 Compliant

Lead Free

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-
HGTG30N60B3

Fairchild/ON Semiconductor

ACTIVE (Last Updated: 2 days ago)

4 Weeks

Through Hole

Through Hole

TO-247-3

3

6.39g

SILICON

-55°C~150°C TJ

Tube

e3

yes

Active

1 (Unlimited)

3

EAR99

-

LOW CONDUCTION LOSS

8541.29.00.95

600V

208W

60A

1

Single

208W

COLLECTOR

Standard

-

POWER CONTROL

-

-

600V

60A

600V

-

1.45V

56 ns

480V, 30A, 3 Ω, 15V

1.9V @ 15V, 30A

60A

365 ns

-

170nC

220A

36ns/137ns

500μJ (on), 680μJ (off)

20.82mm

15.87mm

4.82mm

No SVHC

No

ROHS3 Compliant

Lead Free

Tin

2013

Insulated Gate BIP Transistors

HGTG30N60

NPN

600V

20V

6V

150ns

-

-

-

-

-

HGTG27N120BN vs HGTG30N60B3
HGTG12N60A4D

Fairchild/ON Semiconductor

ACTIVE, NOT REC (Last Updated: 2 days ago)

4 Weeks

Through Hole

Through Hole

TO-247-3

3

6.39g

SILICON

-55°C~150°C TJ

Tube

e3

yes

Not For New Designs

1 (Unlimited)

3

EAR99

-

LOW CONDUCTION LOSS

8541.29.00.95

600V

167W

54A

1

Single

167W

COLLECTOR

Standard

17 ns

POWER CONTROL

N-CHANNEL

96 ns

600V

54A

600V

-

2V

33 ns

390V, 12A, 10 Ω, 15V

2.7V @ 15V, 12A

60A

180 ns

-

78nC

96A

17ns/96ns

55μJ (on), 50μJ (off)

20.82mm

15.87mm

4.82mm

No SVHC

No

ROHS3 Compliant

Lead Free

Tin

2002

-

HGTG12N60

-

-

-

-

-

16ns

30 ns

-

-

-

HGTG27N120BN vs HGTG12N60A4D
HGTG11N120CN

Fairchild/ON Semiconductor

-

-

-

Through Hole

TO-247-3

-

-

-

-55°C~150°C TJ

Tube

-

-

Obsolete

1 (Unlimited)

-

-

-

-

-

-

-

-

-

-

-

-

Standard

-

-

-

-

-

-

-

1200V

-

-

960V, 11A, 10 Ω, 15V

2.4V @ 15V, 11A

-

-

NPT

100nC

80A

23ns/180ns

400μJ (on), 1.3mJ (off)

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

compliant

298W

43A

HGTG27N120BN vs HGTG11N120CN