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HGTG11N120CND

Fairchild/ON Semiconductor HGTG11N120CND

Part Number:
HGTG11N120CND
Manufacturer:
Fairchild/ON Semiconductor
Ventron No:
2494727-HGTG11N120CND
Description:
IGBT 1200V 43A 298W TO247
ECAD Model:
Datasheet:
HGTG11N120CND

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Specifications
Fairchild/ON Semiconductor HGTG11N120CND technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor HGTG11N120CND.
  • Lifecycle Status
    ACTIVE, NOT REC (Last Updated: 2 days ago)
  • Factory Lead Time
    5 Weeks
  • Mount
    Through Hole
  • Mounting Type
    Through Hole
  • Package / Case
    TO-247-3
  • Number of Pins
    3
  • Weight
    6.39g
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Tube
  • Published
    2016
  • JESD-609 Code
    e3
  • Pbfree Code
    yes
  • Part Status
    Not For New Designs
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    3
  • ECCN Code
    EAR99
  • Terminal Finish
    Tin (Sn)
  • Additional Feature
    LOW CONDUCTION LOSS
  • HTS Code
    8541.29.00.95
  • Voltage - Rated DC
    1.2kV
  • Max Power Dissipation
    298W
  • Current Rating
    43A
  • Number of Elements
    1
  • Polarity
    NPN
  • Element Configuration
    Single
  • Power Dissipation
    298W
  • Input Type
    Standard
  • Turn On Delay Time
    23 ns
  • Transistor Application
    MOTOR CONTROL
  • Turn-Off Delay Time
    180 ns
  • Collector Emitter Voltage (VCEO)
    1.2kV
  • Max Collector Current
    43A
  • Reverse Recovery Time
    70 ns
  • Collector Emitter Breakdown Voltage
    1.2kV
  • Voltage - Collector Emitter Breakdown (Max)
    1200V
  • Collector Emitter Saturation Voltage
    2.1V
  • Turn On Time
    33 ns
  • Test Condition
    960V, 11A, 10 Ω, 15V
  • Vce(on) (Max) @ Vge, Ic
    2.4V @ 15V, 11A
  • Turn Off Time-Nom (toff)
    570 ns
  • IGBT Type
    NPT
  • Gate Charge
    100nC
  • Current - Collector Pulsed (Icm)
    80A
  • Td (on/off) @ 25°C
    23ns/180ns
  • Switching Energy
    950μJ (on), 1.3mJ (off)
  • REACH SVHC
    No SVHC
  • Radiation Hardening
    No
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Lead Free
Description

HGTG11N120CND Description
The HGTG11N120CND is an NPT (Non-Punch Through) IGBT. The MOS gate high voltage switching IGBT family has a new member. IGBTs combine the greatest qualities of MOSFETs and bipolar transistors into a single device. This HGTG11N120CND has a MOSFET's high input impedance and a bipolar transistor's low on-state conduction loss. The IGBT used is the TA49291 development type. The development type TA49189 diode was employed. Many high-voltage switching applications with moderate frequencies and low conduction losses, such as AC and DC motor controllers, power supplies, and drivers for solenoids, relays, and contactors, benefit from the IGBT. Previously known as Developmental Type TA49303.


HGTG11N120CND Features
43 A, 1200 V, TC = 25°C 1200 V Switching SOA Capability
Typical Fall Time: 340 ns at TJ = 150°C
Short Circuit Rating
Low Conduction Loss
Thermal Impedance SPICE Model
This is Pb?Free Device


HGTG11N120CND Applications
Power Management
Industrial
DC-DC Conversion
Switch application

HGTG11N120CND More Descriptions
Trans IGBT Chip N-CH 1200V 43A 298000mW 3-Pin(3 Tab) TO-247 Tube / IGBT 1200V 43A 298W TO247
43A, 1200V, NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode
HGTG11N120CND Series 1200 V 43 A Flange Mount NPT N-Channel IGBT-TO-247
IGBT, N; Transistor Type:IGBT; DC Collector Current:43A; Collector Emitter Voltage Vces:2.4V; Power Dissipation Pd:298W; Collector Emitter Voltage V(br)ceo:1.2kV; Transistor Case Style:TO-247; No. of Pins:3; SVHC:No SVHC (18-Jun-2012); Current Ic Continuous a Max:43A; Package / Case:TO-247; Power Dissipation Max:298W; Power Dissipation Pd:298W; Termination Type:SMD; Transistor Polarity:N Channel; Voltage Vces:1.2kV
HGTG11N120CND is based on Non- Punch Through(NPT) IGBT designs. The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as UPS, solar inverter, motor control and power supplies.
Product Comparison
The three parts on the right have similar specifications to HGTG11N120CND.
  • Image
    Part Number
    Manufacturer
    Lifecycle Status
    Factory Lead Time
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Weight
    Transistor Element Material
    Operating Temperature
    Packaging
    Published
    JESD-609 Code
    Pbfree Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    ECCN Code
    Terminal Finish
    Additional Feature
    HTS Code
    Voltage - Rated DC
    Max Power Dissipation
    Current Rating
    Number of Elements
    Polarity
    Element Configuration
    Power Dissipation
    Input Type
    Turn On Delay Time
    Transistor Application
    Turn-Off Delay Time
    Collector Emitter Voltage (VCEO)
    Max Collector Current
    Reverse Recovery Time
    Collector Emitter Breakdown Voltage
    Voltage - Collector Emitter Breakdown (Max)
    Collector Emitter Saturation Voltage
    Turn On Time
    Test Condition
    Vce(on) (Max) @ Vge, Ic
    Turn Off Time-Nom (toff)
    IGBT Type
    Gate Charge
    Current - Collector Pulsed (Icm)
    Td (on/off) @ 25°C
    Switching Energy
    REACH SVHC
    Radiation Hardening
    RoHS Status
    Lead Free
    Contact Plating
    Subcategory
    Base Part Number
    Case Connection
    Max Breakdown Voltage
    Continuous Collector Current
    Gate-Emitter Voltage-Max
    Gate-Emitter Thr Voltage-Max
    Fall Time-Max (tf)
    Height
    Length
    Width
    Polarity/Channel Type
    Surface Mount
    Terminal Position
    Peak Reflow Temperature (Cel)
    Reach Compliance Code
    Time@Peak Reflow Temperature-Max (s)
    Pin Count
    JESD-30 Code
    Qualification Status
    Configuration
    Power - Max
    Current - Collector (Ic) (Max)
    View Compare
  • HGTG11N120CND
    HGTG11N120CND
    Fairchild/ON Semiconductor
    ACTIVE, NOT REC (Last Updated: 2 days ago)
    5 Weeks
    Through Hole
    Through Hole
    TO-247-3
    3
    6.39g
    SILICON
    -55°C~150°C TJ
    Tube
    2016
    e3
    yes
    Not For New Designs
    1 (Unlimited)
    3
    EAR99
    Tin (Sn)
    LOW CONDUCTION LOSS
    8541.29.00.95
    1.2kV
    298W
    43A
    1
    NPN
    Single
    298W
    Standard
    23 ns
    MOTOR CONTROL
    180 ns
    1.2kV
    43A
    70 ns
    1.2kV
    1200V
    2.1V
    33 ns
    960V, 11A, 10 Ω, 15V
    2.4V @ 15V, 11A
    570 ns
    NPT
    100nC
    80A
    23ns/180ns
    950μJ (on), 1.3mJ (off)
    No SVHC
    No
    ROHS3 Compliant
    Lead Free
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • HGTG30N60B3
    HGTG30N60B3
    Fairchild/ON Semiconductor
    ACTIVE (Last Updated: 2 days ago)
    4 Weeks
    Through Hole
    Through Hole
    TO-247-3
    3
    6.39g
    SILICON
    -55°C~150°C TJ
    Tube
    2013
    e3
    yes
    Active
    1 (Unlimited)
    3
    EAR99
    -
    LOW CONDUCTION LOSS
    8541.29.00.95
    600V
    208W
    60A
    1
    NPN
    Single
    208W
    Standard
    -
    POWER CONTROL
    -
    600V
    60A
    -
    600V
    -
    1.45V
    56 ns
    480V, 30A, 3 Ω, 15V
    1.9V @ 15V, 30A
    365 ns
    -
    170nC
    220A
    36ns/137ns
    500μJ (on), 680μJ (off)
    No SVHC
    No
    ROHS3 Compliant
    Lead Free
    Tin
    Insulated Gate BIP Transistors
    HGTG30N60
    COLLECTOR
    600V
    60A
    20V
    6V
    150ns
    20.82mm
    15.87mm
    4.82mm
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    HGTG11N120CND vs HGTG30N60B3
  • HGTG27N120BN
    HGTG27N120BN
    Fairchild/ON Semiconductor
    ACTIVE, NOT REC (Last Updated: 2 days ago)
    44 Weeks
    Through Hole
    Through Hole
    TO-247-3
    3
    6.39g
    SILICON
    -55°C~150°C TJ
    Tube
    -
    e3
    yes
    Not For New Designs
    1 (Unlimited)
    3
    EAR99
    Tin (Sn)
    LOW CONDUCTION LOSS, AVALANCHE RATED
    8541.29.00.95
    1.2kV
    500W
    72A
    1
    -
    Single
    500W
    Standard
    24 ns
    POWER CONTROL
    240 ns
    1.2kV
    72A
    -
    1.2kV
    1200V
    2.45V
    42 ns
    960V, 27A, 3 Ω, 15V
    2.7V @ 15V, 27A
    360 ns
    NPT
    270nC
    216A
    24ns/195ns
    2.2mJ (on), 2.3mJ (off)
    No SVHC
    No
    ROHS3 Compliant
    Lead Free
    -
    -
    -
    COLLECTOR
    -
    72A
    -
    -
    -
    20.82mm
    15.87mm
    4.82mm
    N-CHANNEL
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    HGTG11N120CND vs HGTG27N120BN
  • HGTG7N60A4D
    HGTG7N60A4D
    Fairchild/ON Semiconductor
    -
    -
    -
    Through Hole
    TO-247-3
    -
    -
    SILICON
    -55°C~150°C TJ
    Tube
    -
    e3
    yes
    Obsolete
    3 (168 Hours)
    3
    -
    MATTE TIN
    LOW CONDUCTION LOSS
    -
    -
    -
    -
    1
    -
    -
    -
    Standard
    -
    POWER CONTROL
    -
    -
    -
    34ns
    -
    600V
    -
    17 ns
    390V, 7A, 25 Ω, 15V
    2.7V @ 15V, 7A
    205 ns
    -
    37nC
    56A
    11ns/100ns
    55μJ (on), 60μJ (off)
    -
    -
    ROHS3 Compliant
    -
    -
    -
    -
    COLLECTOR
    -
    -
    -
    -
    -
    -
    -
    -
    N-CHANNEL
    NO
    SINGLE
    NOT APPLICABLE
    unknown
    NOT APPLICABLE
    3
    R-PSFM-T3
    COMMERCIAL
    SINGLE WITH BUILT-IN DIODE
    125W
    34A
    HGTG11N120CND vs HGTG7N60A4D
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS
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