Global Power Technologies Group GP2M012A060F

Name: GP2M012A060F
Brand: Global Power Technologies Group
SKU: 2486475-GP2M012A060F
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: GP2M012A060F

Manufacturer:: Global Power Technologies Group

Ventron No:: 2486475-GP2M012A060F

Description:: MOSFET N-CH 600V 12A TO220F

ECAD Model:

Datasheet:: GP2M012A060F

Specifications

Global Power Technologies Group GP2M012A060F technical specifications, attributes, parameters and parts with similar specifications to Global Power Technologies Group GP2M012A060F.

Mounting Type
Through Hole
Package / Case
TO-220-3 Full Pack
Supplier Device Package
TO-220F
Operating Temperature
-55°C~150°C TJ
Packaging
Tube
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Technology
MOSFET (Metal Oxide)
Power Dissipation-Max
53.4W Tc
FET Type
N-Channel
Rds On (Max) @ Id, Vgs
650mOhm @ 6A, 10V
Vgs(th) (Max) @ Id
5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
1890pF @ 25V
Current - Continuous Drain (Id) @ 25°C
12A Tc
Gate Charge (Qg) (Max) @ Vgs
40nC @ 10V
Drain to Source Voltage (Vdss)
600V
Drive Voltage (Max Rds On,Min Rds On)
10V
Vgs (Max)
±30V

Description

GP2M012A060F Overview
With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 1890pF @ 25V.Single MOSFETs transistor is necessary to have a drain to source voltage (Vdss) of 600V.Using drive voltage (10V) reduces this device's overall power consumption.

GP2M012A060F Features
a 600V drain to source voltage (Vdss)

GP2M012A060F Applications
There are a lot of SemiQ
GP2M012A060F applications of single MOSFETs transistors.

Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification

GP2M012A060F More Descriptions

MOSFET N-CH 600V 12A TO220F

Product Comparison

The three parts on the right have similar specifications to GP2M012A060F.

Image

Part Number

Manufacturer

Mounting Type

Package / Case

Supplier Device Package

Operating Temperature

Packaging

Part Status

Moisture Sensitivity Level (MSL)

Technology

Power Dissipation-Max

FET Type

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Input Capacitance (Ciss) (Max) @ Vds

Current - Continuous Drain (Id) @ 25°C

Gate Charge (Qg) (Max) @ Vgs

Drain to Source Voltage (Vdss)

Drive Voltage (Max Rds On,Min Rds On)

Vgs (Max)

View Compare
GP2M012A060F

Global Power Technologies Group

Through Hole

TO-220-3 Full Pack

TO-220F

-55°C~150°C TJ

Tube

Obsolete

1 (Unlimited)

MOSFET (Metal Oxide)

53.4W Tc

N-Channel

650mOhm @ 6A, 10V

5V @ 250μA

1890pF @ 25V

12A Tc

40nC @ 10V

600V

10V

±30V

-
GP2M008A060CG

Global Power Technologies Group

Surface Mount

TO-252-3, DPak (2 Leads Tab), SC-63

D-Pak

-55°C~150°C TJ

Tape & Reel (TR)

Obsolete

1 (Unlimited)

MOSFET (Metal Oxide)

120W Tc

N-Channel

1.2Ohm @ 3.75A, 10V

5V @ 250μA

1063pF @ 25V

7.5A Tc

23nC @ 10V

600V

10V

±30V

GP2M012A060F vs GP2M008A060CG
GP2M009A090NG

Global Power Technologies Group

Through Hole

TO-3P-3, SC-65-3

TO-3PN

-55°C~150°C TJ

Tape & Reel (TR)

Obsolete

1 (Unlimited)

MOSFET (Metal Oxide)

312W Tc

N-Channel

1.4Ohm @ 4.5A, 10V

4V @ 250μA

2740pF @ 25V

9A Tc

72nC @ 10V

900V

10V

±30V

GP2M012A060F vs GP2M009A090NG
GP2M020A050F

Global Power Technologies Group

Through Hole

TO-220-3 Full Pack

TO-220F

-55°C~150°C TJ

Tape & Reel (TR)

Obsolete

1 (Unlimited)

MOSFET (Metal Oxide)

48W Tc

N-Channel

300mOhm @ 9A, 10V

5V @ 250μA

2880pF @ 25V

18A Tc

44nC @ 10V

500V

10V

±30V

GP2M012A060F vs GP2M020A050F