Fairchild/ON Semiconductor 2N7002T
- Part Number:
- 2N7002T
- Manufacturer:
- Fairchild/ON Semiconductor
- Ventron No:
- 2478007-2N7002T
- Description:
- MOSFET N-CH 60V 115MA SOT-523F
- Datasheet:
- 2N7002T
Fairchild/ON Semiconductor 2N7002T technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor 2N7002T.
- Mounting TypeSurface Mount
- Package / CaseSC-89, SOT-490
- Supplier Device PackageSOT-523F
- Operating Temperature150°C TJ
- PackagingTape & Reel (TR)
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- TechnologyMOSFET (Metal Oxide)
- Power Dissipation-Max200mW Ta
- FET TypeN-Channel
- Rds On (Max) @ Id, Vgs7.5Ohm @ 50mA, 5V
- Vgs(th) (Max) @ Id2V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds50pF @ 25V
- Current - Continuous Drain (Id) @ 25°C115mA Ta
- Drain to Source Voltage (Vdss)60V
- Drive Voltage (Max Rds On,Min Rds On)5V 10V
- Vgs (Max)±20V
- RoHS StatusROHS3 Compliant
2N7002T Overview
A device's maximum input capacitance is 50pF @ 25V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.To operate this transistor, you need to apply a 60V drain to source voltage (Vdss).This device uses no drive voltage (5V 10V) to reduce its overall power consumption.
2N7002T Features
a 60V drain to source voltage (Vdss)
2N7002T Applications
There are a lot of Rochester Electronics, LLC
2N7002T applications of single MOSFETs transistors.
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
Lighting, Server, Telecom and UPS.
DC-to-DC converters
A device's maximum input capacitance is 50pF @ 25V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.To operate this transistor, you need to apply a 60V drain to source voltage (Vdss).This device uses no drive voltage (5V 10V) to reduce its overall power consumption.
2N7002T Features
a 60V drain to source voltage (Vdss)
2N7002T Applications
There are a lot of Rochester Electronics, LLC
2N7002T applications of single MOSFETs transistors.
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
Lighting, Server, Telecom and UPS.
DC-to-DC converters
2N7002T More Descriptions
N-Channel MOSFET, Enhancement Mode, 60V, 115mA, 2Ω
Trans MOSFET N-CH 60V 0.115A 3-Pin SOT-523FL T/R / MOSFET N-CH 60V 115MA SOT-523F
N-Channel 60 V 7.5 Ohm SMT Enhancement Mode Field Transistor SOT-523F
MOSFET, N CH, 60V, 115MA, SOT-523F-3; Transistor Polarity:N Channel; Continuous Drain Current Id:115mA; Drain Source Voltage Vds:60V; On Resistance Rds(on):1.6ohm; Rds(on) Test Voltage Vgs:5V; Threshold Voltage Vgs:1.76V; Power Dissipation Pd:200mW; Operating Temperature Max:150°C; Transistor Case Style:SOT-523F; No. of Pins:3; MSL:-; SVHC:No SVHC (20-Jun-2013)
Trans MOSFET N-CH 60V 0.115A 3-Pin SOT-523FL T/R / MOSFET N-CH 60V 115MA SOT-523F
N-Channel 60 V 7.5 Ohm SMT Enhancement Mode Field Transistor SOT-523F
MOSFET, N CH, 60V, 115MA, SOT-523F-3; Transistor Polarity:N Channel; Continuous Drain Current Id:115mA; Drain Source Voltage Vds:60V; On Resistance Rds(on):1.6ohm; Rds(on) Test Voltage Vgs:5V; Threshold Voltage Vgs:1.76V; Power Dissipation Pd:200mW; Operating Temperature Max:150°C; Transistor Case Style:SOT-523F; No. of Pins:3; MSL:-; SVHC:No SVHC (20-Jun-2013)
The three parts on the right have similar specifications to 2N7002T.
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ImagePart NumberManufacturerMounting TypePackage / CaseSupplier Device PackageOperating TemperaturePackagingPart StatusMoisture Sensitivity Level (MSL)TechnologyPower Dissipation-MaxFET TypeRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CDrain to Source Voltage (Vdss)Drive Voltage (Max Rds On,Min Rds On)Vgs (Max)RoHS StatusSurface MountTransistor Element MaterialJESD-609 CodePbfree CodeNumber of TerminationsTerminal FinishTerminal PositionPeak Reflow Temperature (Cel)Reach Compliance CodeTime@Peak Reflow Temperature-Max (s)Pin CountJESD-30 CodeQualification StatusNumber of ElementsConfigurationOperating ModeDrain Current-Max (Abs) (ID)Drain-source On Resistance-MaxDS Breakdown Voltage-MinFeedback Cap-Max (Crss)MountNumber of PinsWeightTerminationECCN CodeResistanceSubcategoryTerminal FormNumber of ChannelsVoltageElement ConfigurationCurrentPower DissipationTurn On Delay TimeTurn-Off Delay TimeContinuous Drain Current (ID)Threshold VoltageGate to Source Voltage (Vgs)Drain to Source Breakdown VoltageDual Supply VoltageNominal VgsHeightLengthWidthREACH SVHCRadiation HardeningLead FreeFactory Lead TimeContact PlatingSeriesPublishedAdditional FeatureCase ConnectionTransistor ApplicationGate Charge (Qg) (Max) @ VgsRise TimeFall Time (Typ)Max Dual Supply VoltageView Compare
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2N7002TSurface MountSC-89, SOT-490SOT-523F150°C TJTape & Reel (TR)Obsolete1 (Unlimited)MOSFET (Metal Oxide)200mW TaN-Channel7.5Ohm @ 50mA, 5V2V @ 250μA50pF @ 25V115mA Ta60V5V 10V±20VROHS3 Compliant-----------------------------------------------------------
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Through HoleTO-226-3, TO-92-3 (TO-226AA) (Formed Leads)--55°C~150°C TJTape & Box (TB)Obsolete1 (Unlimited)MOSFET (Metal Oxide)350mW TcN-Channel5 Ω @ 500mA, 10V3V @ 1mA60pF @ 25V200mA Ta60V4.5V 10V±20VROHS3 CompliantNOSILICONe1yes3TIN SILVER COPPERBOTTOM260unknown403O-PBCY-T3COMMERCIAL1SINGLE WITH BUILT-IN DIODEENHANCEMENT MODE0.2A5Ohm60V5 pF--------------------------------------
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Surface MountTO-236-3, SC-59, SOT-23-3--55°C~150°C TJTape & Reel (TR)Obsolete1 (Unlimited)MOSFET (Metal Oxide)200mW TaN-Channel7.5 Ω @ 500mA, 10V2.5V @ 250μA50pF @ 25V115mA Ta-5V 10V±20VROHS3 Compliant-SILICONe3-3Matte Tin (Sn)DUAL---3--1-ENHANCEMENT MODE---5 pFSurface Mount31.437803gSMD/SMTEAR997.5OhmFET General Purpose PowerGULL WING160VSingle3A200mW7 ns11 ns115mA2.1V20V60V60V2 V1.02mm3.04mm1.4mmNo SVHCNoLead Free-----------
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Surface MountSC-101, SOT-883-150°C TJTape & Reel (TR)Last Time Buy1 (Unlimited)MOSFET (Metal Oxide)360mW TaN-Channel1.6 Ω @ 500mA, 10V2.1V @ 250μA50pF @ 10V450mA Ta-10V±20VROHS3 CompliantYESSILICONe3-3-BOTTOM---3--1-ENHANCEMENT MODE0.45A----3--------Single-715mW5 ns12 ns450mA-20V60V------NoLead Free20 WeeksTinAutomotive, AEC-Q101, TrenchMOS™2010LOGIC LEVEL COMPATIBLEDRAINSWITCHING0.6nC @ 4.5V6ns7 ns60V
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